MMSD914
Abstract: No abstract text available
Text: MMSD914 MMSD914 SOD123 Top Marking: 5D Color Band Denotes Cathode TOP MARKING: 5D SOD123 BAND DENOTES CATHODE. Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage
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MMSD914
OD123
MMSD914
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marking d6 sod123 diode
Abstract: marking AA DIODE SOD CBVK741B019 F63TNR MMSD914 MMSZ5221B SOD-123 marking code A1 semiconductor band color code MARKING CODE diode sod123 FS F63TNR 3.2
Text: MMSD914 MMSD914 SOD123 Top Marking: 5D COLOR BAND DENOTES CATHODE TOP MARKING: 5D SOD123 BAND DENOTES CATHODE. High Conductance Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MMSD914
OD123
MMBD1201-1205
marking d6 sod123 diode
marking AA DIODE SOD
CBVK741B019
F63TNR
MMSD914
MMSZ5221B
SOD-123 marking code A1
semiconductor band color code
MARKING CODE diode sod123 FS
F63TNR 3.2
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marking 5d
Abstract: No abstract text available
Text: MMSD914 MMSD914 SOD123 Top Marking: 5D COLOR BAND DENOTES CATHODE TOP MARKING: 5D SOD123 BAND DENOTES CATHODE. High Conductance Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MMSD914
OD123
OD123
MMBD1201-1205
marking 5d
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5d marking
Abstract: 5d mark 5D j marking marking 5d
Text: SEMICONDUCTOR PG05DXTE6 MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking 5D 1 0 1 2. Marking 2 3 No. Item Marking Description Device Mark 5D PG05DXTE6 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Index
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PG05DXTE6
5d marking
5d mark
5D j marking
marking 5d
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A115-A
Abstract: SN54ABT573 SN74ABT573A SN74ABT573ADW SN74ABT573AN SN74ABT573ARGYR SN74ABT573
Text: SN54ABT573, SN74ABT573A OCTAL TRANSPARENT D-TYPE LATCHES WITH 3-STATE OUTPUTS SCBS190E – JANUARY 1991 – REVISED NOVEMBER 2002 2 19 3 18 4 17 5 16 6 15 7 14 8 13 9 12 10 11 VCC 1Q 2Q 3Q 4Q 5Q 6Q 7Q 8Q LE 1D 2D 3D 4D 5D 6D 7D 8D 19 1Q 18 2Q 2 3 3D 4D 5D
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SN54ABT573,
SN74ABT573A
SCBS190E
SN54ABT573
A115-A
SN54ABT573
SN74ABT573A
SN74ABT573ADW
SN74ABT573AN
SN74ABT573ARGYR
SN74ABT573
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Untitled
Abstract: No abstract text available
Text: SN54ABT573, SN74ABT573A OCTAL TRANSPARENT D-TYPE LATCHES WITH 3-STATE OUTPUTS SCBS190E – JANUARY 1991 – REVISED NOVEMBER 2002 2 19 3 18 4 17 5 16 6 15 7 14 8 13 9 12 10 11 VCC 1Q 2Q 3Q 4Q 5Q 6Q 7Q 8Q LE 1D 2D 3D 4D 5D 6D 7D 8D 19 1Q 18 2Q 2 3 3D 4D 5D
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SN54ABT573,
SN74ABT573A
SCBS190E
32-mA
64-mA
SN54ABT573
SN74ABT573A
000-V
A114-A)
A115-A)
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SN74ABT573
Abstract: No abstract text available
Text: SN54ABT573, SN74ABT573A OCTAL TRANSPARENT D-TYPE LATCHES WITH 3-STATE OUTPUTS SCBS190E – JANUARY 1991 – REVISED NOVEMBER 2002 2 19 3 18 4 17 5 16 6 15 7 14 8 13 9 12 10 11 VCC 1Q 2Q 3Q 4Q 5Q 6Q 7Q 8Q LE 1D 2D 3D 4D 5D 6D 7D 8D 19 1Q 18 2Q 2 3 3D 4D 5D
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SN54ABT573,
SN74ABT573A
SCBS190E
32-mA
64-mA
SN54ABT573
SN74ABT573A
000-V
A114-A)
A115-A)
SN74ABT573
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Untitled
Abstract: No abstract text available
Text: SN54ABT573, SN74ABT573A OCTAL TRANSPARENT D-TYPE LATCHES WITH 3-STATE OUTPUTS SCBS190E – JANUARY 1991 – REVISED NOVEMBER 2002 2 19 3 18 4 17 5 16 6 15 7 14 8 13 9 12 10 11 VCC 1Q 2Q 3Q 4Q 5Q 6Q 7Q 8Q LE 1D 2D 3D 4D 5D 6D 7D 8D 19 1Q 18 2Q 2 3 3D 4D 5D
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SN54ABT573,
SN74ABT573A
SCBS190E
32-mA
64-mA
SN54ABT573
SN74ABT573A
000-V
A114-A)
A115-A)
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diode marking 5D
Abstract: marking 5d MMBD914 marking 5D diode
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 MMBD914 SWITCHING DIODES FEATURES High-speed switching diode MARKING: 5D Maximum Ratings @TA=25℃ Parameter Symbol Limits Unit Non-Repetitive Peak reverse voltage
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OT-23
OT-23
MMBD914
150mA
MMBD914
diode marking 5D
marking 5d
marking 5D diode
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fairchild top marking
Abstract: MMSD914
Text: MMSD914 Small Signal Diode SOD123 COLOR BAND DENOTES CATHODE TOP MARKING: 5D Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 100 V IF AV Average Rectified Forward Current 200
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MMSD914
OD123
MMSD914
fairchild top marking
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5D marking
Abstract: 5d sot 23 5D marking DIODE BAS16 IR switch BAS16 marking code 5D
Text: BAS16 SILICON EPITAXIAL PLANAR SWITCHING DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 3 1 2 Marking Code: 5D SOT-23 Plastic Package Applications • Ultra high speed switching application
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BAS16
OT-23
5D marking
5d sot 23
5D marking DIODE BAS16
IR switch
BAS16
marking code 5D
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Untitled
Abstract: No abstract text available
Text: MMSD914 Small Signal Diode SOD123 COLOR BAND DENOTES CATHODE TOP MARKING: 5D Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 100 V IF AV Average Rectified Forward Current 200
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MMSD914
MMSD914
OD123
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smd transistor marking 5D
Abstract: transistor 5d smd smd transistor 5d sot-23 CMBT4125 ic 556 specifications MARKING SMD PNP TRANSISTOR br smd transistor 5d
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT4125 GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking CMBT4125 = 5D PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE
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ISO/TS16949
OT-23
CMBT4125
C-120
smd transistor marking 5D
transistor 5d smd
smd transistor 5d sot-23
CMBT4125
ic 556 specifications
MARKING SMD PNP TRANSISTOR br
smd transistor 5d
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD914LT1 SOT-23 SWITCHING DIODES FEATURES Power Dissipation PD : 225 mW（Tamb=25℃） MARKING: 5D Maximum Ratings @TA=25 Parameter Symbol Peak Repetitive Peak reverse voltage
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OT-23
MMBD914LT1
OT-23
150mA
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Untitled
Abstract: No abstract text available
Text: MMSD914 Small Signal Diode SOD123 COLOR BAND DENOTES CATHODE TOP MARKING: 5D Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 100 V IF AV Average Rectified Forward Current 200
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MMSD914
OD123
MMSD914
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5D marking
Abstract: 5d sot 23 MMBD6050
Text: MMBD6050 SILICON EPITAXIAL PLANAR SWITCHING DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 3 1 2 Applications Marking Code: 5D SOT-23 Plastic Package • Ultra high speed switching application
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MMBD6050
OT-23
5D marking
5d sot 23
MMBD6050
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transistor 5d smd
Abstract: smd transistor marking 5D smd transistor 5d smd transistor 5d sot-23 smd diode marking 5d diode 5d smd smd diode 5d CMBT4125 MARKING 350 IC 5D SMD Transistor
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4125 GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking CMBT4125 = 5D PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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OT-23
CMBT4125
C-120
transistor 5d smd
smd transistor marking 5D
smd transistor 5d
smd transistor 5d sot-23
smd diode marking 5d
diode 5d smd
smd diode 5d
CMBT4125
MARKING 350 IC
5D SMD Transistor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SOD-123 MMSD914 SMALL SIGNAL DIODE FEATURES High Voltage MARKING: 5D MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter Value Unit 100 0.2 V VRRM IO
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OD-123
OD-123
MMSD914
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DSC8102
Abstract: No abstract text available
Text: DSC8102 Tentative Total pages page DSC8102 Silicon NPN epitaxial planar type For Low-frequency amplifier Marking Symbol : 5D Package Code : MT-2-A1-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DSC8102
DSC8102
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sot23 marking y5
Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A
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OT-23
BAL99
BZX84-C43
BAR99
BZX84-C47
BAS16
FMMD914
BAV70
FMMD6050
BAV74
sot23 marking y5
BZX84C18
FMMD914
FMMD6050
BZX84-C27
BAR99
MARKING W4 sot 23
C3V9
C5V1
c5v6
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diode t 5d
Abstract: tim 5f diode 5d MARKING 5D DIODE 5dl2c
Text: TOSHIBA 5D L2 C48A, 5F L2 C48A, U 5D L2 C48A, U 5FL2 C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Rep etitive P e a k Reverse Voltage
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5DL2C48A,
5FL2C48A,
U5DL2C48A,
U5FL2C48A
L2C48A,
5FL2C48A
L2C48A
5FL2C48A
diode t 5d
tim 5f
diode 5d
MARKING 5D DIODE
5dl2c
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l2c48
Abstract: No abstract text available
Text: TOSHIBA 5D L2 C48A, 5F L2 C48A, U 5D L2 C48A, U 5FL2 C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Rep etitive P e a k Reverse Voltage
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5DL2C48A,
5FL2C48A,
U5DL2C48A,
U5FL2C48A
L2C48A,
5FL2C48A
5FL2C48A
l2c48
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marking D76
Abstract: No abstract text available
Text: D IO D E S SOT-23/TO-236AB ‘TMPD’ GENERAL-PURPOSE DIODES ELECTRICAL CHARACTERISTICS at TA = 25°C VF Device Type Description •f v BR Min. Max. Marking Max. mA (V) 5D 600 100 T M P D 9 14 G e n e ral-P u rpo se TM P D 4 14 8 G e n e ral-P u rpo se 5D
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OT-23/TO-236AB
BAV74
marking D76
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Untitled
Abstract: No abstract text available
Text: CMBD914 HIGH SPEED SWITCHING DIODE Marking CMBD914 = 5D PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 0.14 0.09 Pin configuration 1 = ANODE 2 = NC 3 = CATHODE ABSOLUTE MAXIMUM RATINGS Continuous reverse voltage Forward current Peak forward surge current
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CMBD914
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