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Vishay Dale RN55D1130FBSL RES 113 OHM 1/8W 1% AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RN55D1130FBSL	Bulk			100	1 - 10 - 100 $3.4459 1000 $3.4459 10000 $3.4459	Buy Now
Vishay Dale RN65D1130FBSL RES 113 OHM 1/2W 1% AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RN65D1130FBSL	Bulk			100	1 - 10 - 100 $3.4459 1000 $3.4459 10000 $3.4459	Buy Now
Vishay Dale RN65D1130FB14 RES 113 OHM 1/2W 1% AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RN65D1130FB14	Bulk			100	1 - 10 - 100 $2.9557 1000 $2.9557 10000 $2.9557	Buy Now
Vishay Dale RN55D1130FRSL RES 113 OHM 1/8W 1% AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RN55D1130FRSL	Reel			500	1 - 10 - 100 - 1000 $0.48686 10000 $0.48686	Buy Now
Vishay Dale RN55D1130FR36 RES 113 OHM 1/8W 1% AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RN55D1130FR36	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.09158	Buy Now

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5D1130 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NDT3055L Abstract: 401H6 Text: e» N a t i on a l M a rch 1 9 9 6 Semiconductor" NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode field effect transistors are produced using National's proprietary, high cel! density, D M O S technology.	OCR Scan	PDF	NDT3055L bSD1130 b50113D NDT3055L 401H6
MMBTA42 Abstract: MPSA42 PZTA42 MPSA42 NATIONAL Text: MPSA42 I MMBTA421PZTA42 tß Discrete POWER & Signal Technologies National Semiconductor" PZTA42 MMBTA42 MPSA42 SOT-23 B SOT-223 M ark: 1D NPN High Voltage Am plifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced	OCR Scan	PDF	PZTA42 OT-223 00M07bfl MMBTA42 MPSA42 PZTA42 MPSA42 NATIONAL
dual P-CHANNEL 30V DS MOSFET Abstract: NDS8958 Dual N & P-Channel MOSFET Text: Na t t o n a l Semiconductor" July 1996 N D S8958 Dual N & P-Channel Enhancem ent M ode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS	OCR Scan	PDF	NDS8958 035fi b5D113D dual P-CHANNEL 30V DS MOSFET NDS8958 Dual N & P-Channel MOSFET
NDB7061 Abstract: NDP7061 LD 8105 d0403 Text: National Semiconductor" M ay 1 9 9 6 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	OCR Scan	PDF	NDP7061 NDB7061 Ru99ed D04031L LD 8105 d0403
NDB4050L Abstract: NDP4050L Text: National A p r il 1 9 9 6 Semiconductor~ * NDP4050L / NDB4050L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These Features lo g ic level N-Channel enhancem ent m ode • 15A, 50V. RDSI0NI = 0.1Q @ V GS = 5V tran sisto rs are produced using	OCR Scan	PDF	NDP4050L NDB4050L hSD1130 bS01130 004D233
NDS8928 Abstract: ab-5 national Text: National Semiconductor July 1996 ” NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor Features General Description These dual N- and P-Channel enhancem ent m ode p ow er fie ld effect tran sisto rs are produced using N ational's pro p rie ta ry, h ig h cell density, DMOS	OCR Scan	PDF	NDS8928 b5D113D bSD113D NDS8928 ab-5 national