Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1076A 2SC4853A RF Transistor http://onsemi.com 6V, 15mA, fT=5GHz, NPN Single MCP Features • Low-voltage, low-current operation : fT=5GHz typ VCE=1V, IC=1mA : ⏐S21e⏐2=7dB typ (f=1GHz) : NF=2.6dB typ (f=1GHz) Specifications Absolute Maximum Ratings at Ta=25°C
|
Original
|
PDF
|
ENA1076A
2SC4853A
S21e2
A1076-8/8
|
Untitled
Abstract: No abstract text available
Text: Datasheet | Wireless LAN AT-WR4542 IEEE 802.11 5GHz Outdoor Wireless Routing CPE AT-WR4542 IEEE 802.11a/h outdoor wireless routing CPE with 22dBi 5GHz embedded panel antenna A Complete Solution for Wireless ISPs, Local Utilities, Municipalities, Hospitality and Enterprises
|
Original
|
PDF
|
-WR4542
11a/h
22dBi
WR4500
IEC60950,
UL60950,
CSA60950,
EN60950
|
max2852
Abstract: MAX2852ITK wireless hdmi max285
Text: 19-5010; Rev 1; 3/10 TION KIT EVALUA BLE IL AVA A 5GHz Receiver The MAX2852 is a single-chip RF receiver IC designed for 5GHz wireless HDMI applications. The IC includes all circuitry required to implement the complete receiver function and crystal oscillator, providing a fully integrated
|
Original
|
PDF
|
MAX2852
68-pin
MAX2852
MAX2852ITK
wireless hdmi
max285
|
Untitled
Abstract: No abstract text available
Text: 19-5009; Rev 1; 3/10 5GHz, 4-Channel MIMO Transmitter The MAX2850 is a single-chip, 4-channel RF transmitter IC designed for 5GHz wireless HDMI applications. The IC includes all circuitry required to implement the complete 4-channel MIMO RF transmitter function and crystal oscillator, providing a fully integrated transmit path,
|
Original
|
PDF
|
MAX2850
MAX2850
|
Untitled
Abstract: No abstract text available
Text: 19-5121; Rev 1; 3/10 TION KIT EVALUA BLE IL AVA A 5GHz, 5-Channel MIMO Receiver The MAX2851 is a single-chip, 5-channel RF receiver IC designed for 5GHz wireless HDMI applications. The IC includes all circuitry required to implement the complete 5-channel MIMO RF receiver function and crystal
|
Original
|
PDF
|
MAX2851
MAX2851
|
ic 1496 specifications
Abstract: 2SC4855 ITR07603 ITR07604 ITR07605 ITR07606 ITR07607 CE1M KT 1117
Text: Ordering number:ENN4759 NPN Epitaxial Planar Silicon Transistor 2SC4855 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : ⏐S21e⏐2=7.5dB typ
|
Original
|
PDF
|
ENN4759
2SC4855
S21e2
2SC4855]
ic 1496 specifications
2SC4855
ITR07603
ITR07604
ITR07605
ITR07606
ITR07607
CE1M
KT 1117
|
Untitled
Abstract: No abstract text available
Text: Ordering number:ENN4759 NPN Epitaxial Planar Silicon Transistor 2SC4855 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7.5dB typ
|
Original
|
PDF
|
ENN4759
2SC4855
S21e2
2SC4855]
|
EN4759
Abstract: UA 324 cn 2SC4855 ic 1496 specifications
Text: Ordering number:EN4759 NPN Epitaxial Planar Silicon Transistor 2SC4855 Low-Voltage, Low-Current& High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7.5dB typ
|
Original
|
PDF
|
EN4759
2SC4855
S21e2
2SC4855]
EN4759
UA 324 cn
2SC4855
ic 1496 specifications
|
TA-2425
Abstract: 2SC5537 ENN6340 26GHz
Text: Ordering number:ENN6340 NPN Epitaxial Planar Silicon Transistor 2SC5537 Low-Voltage, Low-Current High-frequency Amplifier Applications Package Dimensions • Low voltage, low current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7dB typ (f=1GHz).
|
Original
|
PDF
|
ENN6340
2SC5537
S21e2
2SC5537]
TA-2425
2SC5537
ENN6340
26GHz
|
2SC5537
Abstract: ic 723 cn
Text: Ordering number:ENN6340 NPN Epitaxial Planar Silicon Transistor 2SC5537 Low-Voltage, Low-Current High-frequency Amplifier Applications Package Dimensions • Low voltage, low current operation : fT=5GHz typ. VCE=1V, IC=1mA : ⏐S21e⏐2=7dB typ (f=1GHz).
|
Original
|
PDF
|
ENN6340
2SC5537
S21e2
2SC5537]
2SC5537
ic 723 cn
|
KT 819 transistor
Abstract: TRANSISTOR KT 838
Text: Ordering number:ENN4579 NPN Epitaxial Planar Silicon Transistor 2SC4854 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7dB typ (f=1GHz).
|
Original
|
PDF
|
ENN4579
2SC4854
S21e2
2018B
2SC4854]
KT 819 transistor
TRANSISTOR KT 838
|
CE1M
Abstract: TRANSISTOR KT 838 KT 819 transistor 2SC4854 ITR07592 ITR07593 ITR07594 ITR07595 AX-9521
Text: Ordering number:ENN4579 NPN Epitaxial Planar Silicon Transistor 2SC4854 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : ⏐S21e⏐2=7dB typ (f=1GHz).
|
Original
|
PDF
|
ENN4579
2SC4854
S21e2
2018B
2SC4854]
CE1M
TRANSISTOR KT 838
KT 819 transistor
2SC4854
ITR07592
ITR07593
ITR07594
ITR07595
AX-9521
|
of transistor C 4908
Abstract: 2SC4853 TED 2422 c 337 25
Text: Ordering number:EN4578A NPN Epitaxial Planar Silicon Transistor 2SC4853 Low-Voltage, Low-Current High-Frequency Amplifier Applications Package Dimensions unit:mm 2059B [2SC4853] 0.425 • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7dB typ (f=1GHz).
|
Original
|
PDF
|
EN4578A
2SC4853
2059B
2SC4853]
S21e2
15Ltd.
of transistor C 4908
2SC4853
TED 2422
c 337 25
|
Untitled
Abstract: No abstract text available
Text: Ordering number:ENN4578A NPN Epitaxial Planar Silicon Transistor 2SC4853 Low-Voltage, Low-Current High-Frequency Amplifier Applications Package Dimensions unit:mm 2059B [2SC4853] 0.425 • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7dB typ (f=1GHz).
|
Original
|
PDF
|
ENN4578A
2SC4853
2059B
2SC4853]
|
|
TRANSISTOR KT 838
Abstract: KT 819 transistor 2SC4854
Text: Ordering number:EN4579 NPN Epitaxial Planar Silicon Transistor 2SC4854 Low-Voltage, Low-Current High-Frequency Amplifier Applications Package Dimensions • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz).
|
Original
|
PDF
|
EN4579
2SC4854
S21e2
2018B
2SC4854]
TRANSISTOR KT 838
KT 819 transistor
2SC4854
|
A1076
Abstract: ITR07582 ITR07583 ITR07585
Text: 2SC4853A Ordering number : ENA1076 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC4853A Low-Voltage, Low-Current High-Frequency Amplifier Applications Features • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA :⏐S21e⏐2=7dB typ (f=1GHz).
|
Original
|
PDF
|
2SC4853A
ENA1076
S21e2
A1076-5/5
A1076
ITR07582
ITR07583
ITR07585
|
Untitled
Abstract: No abstract text available
Text: 2SC4853A Ordering number : ENA1076A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC4853A Low-Voltage, Low-Current High-Frequency Amplifier Applications Features • Low-voltage, low-current operation : fT=5GHz typ VCE=1V, IC=1mA : ⏐S21e⏐2=7dB typ (f=1GHz)
|
Original
|
PDF
|
2SC4853A
ENA1076A
A1076-8/8
|
a1093
Abstract: NF 841 ENA1093 2SC5537
Text: 2SC5537A Ordering number : ENA1093 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5537A Low-Voltage, Low-Current High-Frequency Amplifier Applications Features • • • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA :⏐S21e⏐2=7dB typ (f=1GHz).
|
Original
|
PDF
|
2SC5537A
ENA1093
S21e2
A1093-4/4
a1093
NF 841
ENA1093
2SC5537
|
Untitled
Abstract: No abstract text available
Text: KSC2753 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE AMPLIFIER FOR VHF/UHF High fT = 5GHz NF = 1.5dB, |S218|: = 16dB <f = 500MHz NF = 1.7dB, |S21e|' = 10.5dB 1= 1000MHz) ABSOLUTE MAXIMUM RATINGS Characteristics Collector Base Voltage Collector Emitter Voltage
|
OCR Scan
|
PDF
|
KSC2753
500MHz)
1000MHz)
1000MHz
Cjtj4142
002476b
|
Untitled
Abstract: No abstract text available
Text: HFA3102 Semiconductor Dual Long-Tailed Pair Transistor Array August 1996 Description Features High Gain-Bandwidth Product fy . . . . 10GHz High Power Gain-Bandwidth Product . . 5GHz High Current Gain (h p ^ ). 70 Noise Figure (Transistor).
|
OCR Scan
|
PDF
|
HFA3102
10GHz
HFA3102
10GHz)
1340nm
1320nm
1320um
|
LTJ1
Abstract: J119 flm1011-2 lem la 50 p FLM0910-4C
Text: E T LM O 9 1 0 -4 C s ± ii É : SHF iJj^736dBm VDS=10V, 9. 5-10. 5GHz f Ì f i : À f c t i^ l* | g | 5 e è a GaAs FET. a WiMhfì^o £ # F S « & S S fS W S fflS te , « ± S ® É : SHF w S t ì i ; W j i f ® B o t±j^J38dBm(Vos=10V, 9. 5-10. 5GHz)
|
OCR Scan
|
PDF
|
736dBm
61dss,
J38dBm
35dBii
25dBmS.
61dss
LTJ1
J119
flm1011-2
lem la 50 p
FLM0910-4C
|
TA4100F
Abstract: ta4100
Text: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA41OOF UHF VHF RF, MIX APPLICATION FEATURES • High fT . fT = 5GHz • Differential Circuit is Composed of 3 Transistors. SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) B3 E W eight : 0.013g (Typ.)
|
OCR Scan
|
PDF
|
TA4100F
961001EBA2
TA4100F
ta4100
|
TA4100F
Abstract: No abstract text available
Text: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4100F UHF VHF RF, M IX APPLICATION FEATURES • High fT. fT = 5GHz • Differential Circuit is Composed of 3 Transistors. SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) B3 E W eight : 0.013g (Typ.)
|
OCR Scan
|
PDF
|
TA4100F
TA4100F
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4100F UHF VHF RF, M IX APPLICATION FEATURES • High fT. fT = 5GHz • Differential Circuit is Composed of 3 Transistors. SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) B3 E W eight : 0.013g (Typ.)
|
OCR Scan
|
PDF
|
TA4100F
|