5P J TRANSISTOR MARKING Search Results

5P J TRANSISTOR MARKING Result Highlights (5)

Part	Manufacturer	Description
5962-8672601EA	Rochester Electronics LLC	Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA)
54F350/BEA	Rochester Electronics LLC	54F350 - Shifter, F/FAST Series, 4-Bit, TTL, CDIP16 - Dual marked (5962-8607501EA)
5962-8672601FA	Rochester Electronics LLC	Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BFA)
54F151/BEA	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA)
54F151/B2A	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CQCC20 - Dual marked (M38510/33901B2A)

5P J TRANSISTOR MARKING Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MIP2F3 Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the	Original	PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent	PDF
mip411 Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291 Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the	Original	PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291	PDF
2SC5936 Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928	PDF
2sc5929 Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE	PDF
IC TA 31101 Abstract: pa 2030a equivalent pa 2030a FC102 ts 3110 TRANSISTOR 2SC4211 C-03 DDD744S 08/bup 3110 transistor Text: SANYO SEMICONDUCTOR CORP 55E D 7 EH707fci Q D 0 7 M 4 D Q T - Z 7 -Ö 7 FC102 # NPN Epitaxial Planar Silicon Com posite Transistor 2067 Low-Frequency General-Purpose Amp, Differential Amp Applications 3110 F eatu res •Composite type with 2 transistors contained in the CP package currently in use, im proving the	OCR Scan	00Q7M40 FC102 FC102 2SC4211, IC TA 31101 pa 2030a equivalent pa 2030a ts 3110 TRANSISTOR 2SC4211 C-03 DDD744S 08/bup 3110 transistor	PDF
693F TRANSISTOR Abstract: 693F transistor 693f 2SC2814 P3NF Text: O rdering number : EN 693F _ 2SC2814 N0.693F NPN Epitaxial P lanar Silicon Transistor SANYO High-Frequency General-Purpose Amp Applications I Features . Very small package enabling compactness and slimness of sets. . High fx and small Cre* fT=320MHz typ, cre=0.95pF typ	OCR Scan	2SC2814 320MHz 693F TRANSISTOR 693F transistor 693f P3NF	PDF
2SC4399 Abstract: AC303 Text: Ordering number: EN 3020 2 S C 4 3 99 No.3020 NPN Epitaxial Planar Silicon Transistor SAiYO i High-Frequency General-Purpose Amp Applications F eatu re s • High power g a in : PG=25dB typ f= 100MHz • Very small-sized package permitting the 2SC4399-applied sets to be made small and slim	OCR Scan	EN3020 100MHz) 2SC4399-applied 2SC4399 AC303	PDF
693F TRANSISTOR Abstract: 693F N20J transistor 693f 2SC2814 2SC28H II04A Text: SAN YO S E M I C O N D U C T O R CORP TTTTOTb 5SE D OQDbTl? T • ' 3 'I S 2SC2814 ♦ NPN Epitaxial Planar Silicon Transistor 2018A High-Frequency General-Purpose Amp Applications 693F Features . V ery small pack a g e ena b l i n g compactness and slimness of sets.	OCR Scan	320MHz 693F TRANSISTOR 693F N20J transistor 693f 2SC2814 2SC28H II04A	PDF
2SA1177 Abstract: hf power amplifiers 2-30 mhz Text: Ordering number: EN 7 tì ci7G7ti 0 0 1 5 5 1 5 851G 44D 2SA1177 SAiYO PNP Epitaxial Planar Silicon Transistor i HF Amp Applications Use f o r u s e i n FM RF a m p l i f i e r s , m i x e r s , o s c i l l a t o r s , . Id e a lly s u ite d IF a m p l i f i e r s .	OCR Scan	2SA1177 230MHz 2034/2034A SC-43 7tlt17D7b 2SA1177 hf power amplifiers 2-30 mhz	PDF
k 2059 TRANSISTOR Abstract: TRANSISTOR BI 187 2T transistor surface mount pa 2030a 2SC4400 NPN S2e 1Ft TRANSISTOR Text: SANY O S E M I C O N D U C T O R 2SE CORP D 7 cH ? 0 7 b 000 3^33 7 2SC4400 T -3 I-IS 'r;' ,>V ^ ’sx'*>V:- N P N Epitaxial Planar Silicon Transistor 2059 High-Frequency General-Purpose Amp Applications F eatu res . High power gain • High cutoff frequency	OCR Scan	2SC4400 2SC4400-applied k 2059 TRANSISTOR TRANSISTOR BI 187 2T transistor surface mount pa 2030a 2SC4400 NPN S2e 1Ft TRANSISTOR	PDF
axial zener diodes marking code c3v6 Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode Text: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.	OCR Scan	BR805A BR81A BR82A BR84A BR86A BR88A BR91A BR92A BR94A BR96A axial zener diodes marking code c3v6 H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode	PDF
KEP32 Abstract: HEP32 HP32 MC100EP32 MC10EP32 Text: MC10EP32, MC100EP32 3.3V / 5V ECL B2 Divider Description • 350 ps Typical Propagation Delay • Maximum Frequency > 4 GHz Typical Figure 3 • PECL Mode Operating Range: • MARKING DIAGRAMS* 8 8 1 SOIC−8 D SUFFIX CASE 751 1 8 8 1 VCC = 3.0 V to 5.5 V with VEE = 0 V	Original	MC10EP32, MC100EP32 KEP32 HEP32 506AA MC100 MC10EP32/D KEP32 HEP32 HP32 MC100EP32 MC10EP32	PDF
KEP32 Abstract: HEP32 HP32 MC100EP32 MC10EP32 Text: MC10EP32, MC100EP32 3.3V / 5V ECL B2 Divider Description Features • 350 ps Typical Propagation Delay • Maximum Frequency > 4 GHz Typical Figure 3 • PECL Mode Operating Range: • http://onsemi.com MARKING DIAGRAMS* 8 8 1 SOIC−8 D SUFFIX CASE 751	Original	MC10EP32, MC100EP32 KEP32 HEP32 506AA MC100 MC10EP32/D KEP32 HEP32 HP32 MC100EP32 MC10EP32	PDF
KEP32 Abstract: MC100EP32DTG HEP32 HP32 MC100EP32 MC10EP32 Text: MC10EP32, MC100EP32 3.3V / 5V ECL B2 Divider Description • 350 ps Typical Propagation Delay • Maximum Frequency > 4 GHz Typical Figure 3 • PECL Mode Operating Range: • MARKING DIAGRAMS* 8 8 1 SOIC−8 D SUFFIX CASE 751 1 8 8 1 VCC = 3.0 V to 5.5 V with VEE = 0 V	Original	MC10EP32, MC100EP32 KEP32 HEP32 506AA MC100 MC10EP32/D KEP32 MC100EP32DTG HEP32 HP32 MC100EP32 MC10EP32	PDF

SOT-23 marking l31 Abstract: wA SOT23 SWITCHING F9 SOT23 marking va transistors C5 MARKING TRANSISTOR transistor dg sot-23 U/25/20/TN26/15/850/F9 SOT23 BCW29 BCW30 BFQ31 Text: FERRANTI * semiconductors FMMT2369 NPN Silicon Planar High Speed Switching Transistor DESCRIPTION This device is intended specificelly fo r use in high speed, lo w current switching epplications. Encapsulated in th e popular SOT-213 package these devices are designed specifically fo r use in thin and thick film	OCR Scan	FMMT2369 OT-23 Continuo00/300 FMMT2222 FMMT2369A FMMT2369 BSV52 BSS82B BSS82C SOT-23 marking l31 wA SOT23 SWITCHING F9 SOT23 marking va transistors C5 MARKING TRANSISTOR transistor dg sot-23 U/25/20/TN26/15/850/F9 SOT23 BCW29 BCW30 BFQ31	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MMFT5P03HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M F T 5P 0 3H D Medium Power Surface Mount Products Motorola Preferred Device TMOS P-Channel Field Effect Transistor TMOS MEDIUM POWER FET 5.2 AMPERES	OCR Scan	MMFT5P03HD/D MMFT5P03HD switc82. 318E-04	PDF
marking code AD Abstract: transistor EH sot-23 ZD 103 ma BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20 Text: FERRANTI semiconductors FMMT2369A NPN Silicon Planar High Speed S w itching Transistor DESCRIPTION This device is intended specifically for use in high speed, low current switching applications. Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid	OCR Scan	FMMT2369A OT-23 Curre00/300 FMMT2222 FMMT2369A FMMT2369 BSV52 BSS82B BSS82C marking code AD transistor EH sot-23 ZD 103 ma BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20	PDF
S5P02H Abstract: No abstract text available Text: MOTOROLA Order this document by MMSF5P02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M S F 5P 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET 8.7 AMPERES	OCR Scan	MMSF5P02HD/D S5P02H	PDF
kn sot23 Abstract: sot-23 Marking KN BSV52 A12 marking CTC ef 125 33 m8 SOT23 transistor EH sot-23 marking code transistors BSV52 marking code 25X SOT23 C5 MARKING TRANSISTOR Text: * FERRANTI semiconductors BSV52 NPN Silicon Planar High Speed Switching Transistor D E S C R IP TIO N This d evice is in te n d ed s p e c ific a lly fo r use in high speed, lo w c u rre n t s w itc h in g a p p lica tio n s. Encapsulated in th e p o p u la r S O T -2 3 package th ese devices	OCR Scan	BSV52 OT-23 BSV52 Volt00/300 FMMT2222 FMMT2369A FMMT2369 BSS82B kn sot23 sot-23 Marking KN A12 marking CTC ef 125 33 m8 SOT23 transistor EH sot-23 marking code transistors BSV52 marking code 25X SOT23 C5 MARKING TRANSISTOR	PDF
SOT-23 EBC Abstract: ZD 103 ma transistor marking code 7E SOT-23 TRANSISTOR a43 ferranti marking AG SOT 23 transistor sot-23 Marking AR BSS65 BSS65R BCW30 Text: FERRANTI i semiconductors BSS65 P N P S i l i c o n Plana r Hi gh Sp e e d S w i t c h i n g Transistor DESCRIPTION These devices are intended for use in high speed switchllng and high frequency amplifier applications. Encapsulated in the popular SOT-23 package, those	OCR Scan	BSS65 OT-23 BSS65 Colle00/300 FMMT2222 FMMT2369A FMMT2369 BSV52 BSS82B SOT-23 EBC ZD 103 ma transistor marking code 7E SOT-23 TRANSISTOR a43 ferranti marking AG SOT 23 transistor sot-23 Marking AR BSS65R BCW30	PDF
BENT LEAD transistor TO-92 Outline Dimensions Abstract: 2SC2712 equivalent 4TE12 diode ssc J Fet marking 2 AW 2SC2873 equivalent 90105 toshiba ultrasonic atomizing SMD TRANSISTOR MARKING 5c Text: 5. PA C K A G E FO R M S 5.1 PACKAGE FORM SELECTION TABLE 5.1.1 SUPER-MINI DEVICES S-MINI (SC-59 , SMQ (SC-61), SMV, SM6) PACKAGING FORM PACKAGE SPECIFI CATION OUTLINE Pack PACKAGE UNIT - e TE85L Taping EXTERIOR Unit: mm » » » 3000 pcs/ Reel TE85R TE85N	OCR Scan	SC-59) SC-61) TE85L TE85R TE85N SC-70) BENT LEAD transistor TO-92 Outline Dimensions 2SC2712 equivalent 4TE12 diode ssc J Fet marking 2 AW 2SC2873 equivalent 90105 toshiba ultrasonic atomizing SMD TRANSISTOR MARKING 5c	PDF
LT 1021 Abstract: 5P J TRANSISTOR MARKING LM368 Text: f T u n t _ LT1021 m TECHNOLOGY Precision R eference FEATURES DEBCRIFnOn • Pin Compatible with Most Bandgap Reference Applications, Including Ref 01, Ref 02, LM368, MC1400 and MC1404 with Greatly Improved Stability, Noise and Drift The LT 1021 is a precision reference with ultralow drift	OCR Scan	LM368, MC1400 MC1404 100dB 254mm) LT1019 LT1027 LT1236 200mV LT1389 LT 1021 5P J TRANSISTOR MARKING LM368	PDF
gn2011 Abstract: XN7602 MA151WK UN2212 1Ft 6PIN M2D Package m2b 160 le 4 5P J TRANSISTOR MARKING 3pin 20100 9YDT Text: • z s K e m m m * — 5/ Mini Type 6 -p in P ackage Outline Transistors, Diodes $ .-M { 6 f t ? ) U n it i mm S E ^ O S - S I O S i) ¿ P li/ 'f y 'T -'y V -i'X T h 7 > y ' 7 J 2 m ? k iL tm , - is . i f H ■ 43 f t I L « T A B U S ' < 7 > r -	OCR Scan	tiA-Ac37' MA334 MA345 MA551 MA704 MA152WA MA152WK MA153 MA151WA MA151WK gn2011 XN7602 MA151WK UN2212 1Ft 6PIN M2D Package m2b 160 le 4 5P J TRANSISTOR MARKING 3pin 20100 9YDT	PDF
5P J TRANSISTOR MARKING Abstract: No abstract text available Text: Ordering number:ENN1066A NPN Epitaxial Planar Silicon Transistor 2SC3142 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • FBET series. · Compact package enabling compactness of sets. · High fT and small cre fT=750MHz typ, cre=0.6 typ .	Original	ENN1066A 2SC3142 750MHz 2018B 2SC3142] 5P J TRANSISTOR MARKING	PDF

5P J TRANSISTOR MARKING Search Results

5P J TRANSISTOR MARKING Result Highlights (5)

5P J TRANSISTOR MARKING Datasheets Context Search

MIP2F3

mip411

2SC5936

2sc5929

IC TA 31101

693F TRANSISTOR

2SC4399

693F TRANSISTOR

2SA1177

k 2059 TRANSISTOR

axial zener diodes marking code c3v6

KEP32

KEP32

KEP32

SOT-23 marking l31

Untitled

marking code AD

S5P02H

kn sot23

SOT-23 EBC

BENT LEAD transistor TO-92 Outline Dimensions

LT 1021

gn2011

5P J TRANSISTOR MARKING