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    5SYA2039 IGBT Search Results

    5SYA2039 IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    5SYA2039 IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ic 082 specifications

    Abstract: No abstract text available
    Text: VCE IC = = 1700 V 1800 A ABB HiPakTM IGBT Module 5SNA 1800E170100 Doc. No. 5SYA 1554-03 Nov. 04 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		PDF 1800E170100 CH-5600 ic 082 specifications

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1413-02 04-2012 5SNA 0500J650300 HiPak IGBT Module VCE = 6500 V IC = 500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability


    Original     		PDF 0500J650300 CH-5600 0500J650300|

    IGBT CHIP 600V ABB

    Abstract: ABB IGBT diode 1200V 2400E-12
    Text: VCE IC = = 1200 V 2400 A ABB HiPakTM IGBT Module 5SNA 2400E120100 PRELIMINARY Doc. No. 5SYA1561-00 Oct 05 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		PDF 2400E120100 5SYA1561-00 CH-5600 IGBT CHIP 600V ABB ABB IGBT diode 1200V 2400E-12

    1200G330100

    Abstract: No abstract text available
    Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-01 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package High power density AlSiC base-plate for high power cycling capability


    Original     		PDF 1200G330100 5SYA1563-01 CH-5600 1200G330100

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1417-01 11-2011 5SNA 2400E170305 ABB HiPakTM IGBT Module VCE = 1700 V IC = 2400 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance


    Original     		PDF 2400E170305 CH-5600 2400E170305

    5SNA

    Abstract: IGBT 6500 IC da 5SNA0750G650300
    Text: VCE IC = = 6500 V 750 A ABB HiPakTM IGBT Module 5SNA 0750G650300 PRELIMINARY Doc. No. 5SYA 1600-00 Apr 08 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • High insulation package • AlSiC base-plate for high power


    Original     		PDF 0750G650300 CH-5600 5SNA IGBT 6500 IC da 5SNA0750G650300

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 150 A ABB HiPakTM IGBT Module 5SNG 0150P450300 Doc. No. 5SYA 1593-04 07-2013 • Ultra low loss, rugged SPT+ chip-set  Smooth switching SPT+ chip-set for good EMC  High insulation package  AlSiC base-plate for high power cycling capability


    Original     		PDF 0150P450300 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 800 A ABB HiPakTM IGBT Module 5SNA 0800J450300 Doc. No. 5SYA1402-01 Mar. 12 •     Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling


    Original     		PDF 0800J450300 5SYA1402-01 UL1557, E196689 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450350 Doc. No. 5SYA 1415-03 01-2014 •     Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling


    Original     		PDF 1200G450350 UL1557, E196689 CH-5600

    OP 4400 chipset

    Abstract: 5SNA2400E170100
    Text: VCE IC = = 1700 V 2400 A ABB HiPakTM IGBT Module 5SNA 2400E170100 Doc. No. 5SYA 1555-02 Aug 04 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		PDF 2400E170100 CH-5600 OP 4400 chipset 5SNA2400E170100

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 150 A ABB HiPakTM IGBT Module 5SNG 0150P450300 Doc. No. 5SYA 1593-03 04-2012 Ultra low loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability AlN substrate for low thermal


    Original     		PDF 0150P450300 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 PRELIMINARY Doc. No. 5SYA 1558-01 May 05 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability


    Original     		PDF 0600G650100 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 650 A ABB HiPakTM IGBT Module 5SNA 0650J450300 Doc. No. 5SYA 1598-02 Jan 09 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		PDF 0650J450300 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 3300 V 800 A ABB HiPakTM IGBT Module 5SNE 0800E330100 PRELIMINARY Doc. No. 5SYA 1562-00 Feb. 05 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		PDF 0800E330100 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-00 Apr.06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • High power density • AlSiC base-plate for high power


    Original     		PDF 1200G330100 5SYA1563-00 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 Doc. No. 5SYA1558-02 Jan 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability


    Original     		PDF 0600G650100 5SYA1558-02 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200E330100 Doc. No. 5SYA1556-04 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability


    Original     		PDF 1200E330100 5SYA1556-04 CH-5600

    IGBT CHIP 600V ABB

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 2400 A ABB HiPakTM IGBT Module 5SNA 2400E120100 PRELIMINARY Doc. No. 5SYA1561-00 Apr 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		PDF 2400E120100 5SYA1561-00 CH-5600 IGBT CHIP 600V ABB

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 650 A ABB HiPakTM IGBT Module 5SNA 0650J450300 PRELIMINARY Doc. No. 5SYA 1598-00 Nov 07 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		PDF 0650J450300 CH-5600

    5SLD1000N330300

    Abstract: 5SYA2039 diode in 400 1000N330300 UC1250
    Text: Data Sheet, Doc. No. 5SYA 1419-03 06-2012 5SLD 1000N330300 HiPak DIODE Module VRRM = 3300 V IF = 2 x 1000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance


    Original     		PDF 1000N330300 CH-5600 5SLD1000N330300 5SYA2039 diode in 400 UC1250

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1419-02 04-2012 5SLD 1000N330300 ABB HiPakTM DIODE Module VRRM = 3300 V IF = 2 x 1000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance


    Original     		PDF 1000N330300 CH-5600

    5SYA2039

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1421-00 12-2011 5SLA 2000J170300 ABB HiPakTM Diode Module VRRM = 1700 V IF = 2000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance


    Original     		PDF 2000J170300 CH-5600 5SYA2039

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1416-02 04-2012 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance


    Original     		PDF 3600E170300 CH-5600

    5SNA-1500E330300

    Abstract: igbt 3 KA res 301 ohm 1 1w
    Text: VCE IC = = 3300 V 1500 A ABB HiPakTM IGBT Module 5SNA 1500E330300 Doc. No. 5SYA 1595-00 July 07 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		PDF 1500E330300 CH-5600 5SNA-1500E330300 igbt 3 KA res 301 ohm 1 1w