1000mW laser diode
Abstract: 1000mW laser 830nm
Text: 300-0692-00 830nm 100mW TE Cooled Module Specification Wavelength 830nm ±10nm Output Power 100.0mW adjustable Power Stability <1% Beam Size 6 x 2.2 mm Beam Divergence 0.2 x 0.4 mrad RMS Noise <1% Operating Voltage +5V ±0.1V DC Operating Current 2.5A maximum (laser diode 500mA maximum)
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830nm
100mW
830nm
500mA
10KHz,
165mm
1000mW laser diode
1000mW laser
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laser diode 980 nm 100mW
Abstract: 100mw laser diode 980 nm 5v 100mw laser diode
Text: LCA980100M5N Laser Diode Technical Data ABSOLUTE MAXIMUM RATINGS Tc=25 oC Features • Index Guided MQW Structure • Wavelength : 980 nm (Typ.) • Optical Power : 100 mW CW • Threshold Current : 35 mA ( Typ. ) • Package Style : TO-18 (5.6 mmØ) DESCRIPTION
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LCA980100M5N
100mW
100mW,
lca980100m5n
laser diode 980 nm 100mW
100mw laser diode 980 nm
5v 100mw laser diode
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Untitled
Abstract: No abstract text available
Text: LCA815100M5N Laser Diode Technical Data ABSOLUTE MAXIMUM RATINGS Tc=25 oC Features • Index Guided MQW Structure • Wavelength : 815 nm (Typ.) • Optical Power : 100 mW CW • Threshold Current : 70 mA ( Typ. ) • Package Style : TO-18 (5.6 mmØ) DESCRIPTION
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LCA815100M5N
100mW
100mW
100mW,
815100m5n
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ADL-83Z01HL
Abstract: No abstract text available
Text: ADL-83Z01HL InAlGaAs Infrared Laser Diode 6-2D-LD85-007_Rev.00 830nm 100mW 5.6φ TO-Type Laser Diode • Features 1. Low operation current 2. Cost effective 3. Monitor PD included • Applications 1. IR illumination 2. CTP printer 3. Military 4. Medical applications
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ADL-83Z01HL
6-2D-LD85-007
830nm
100mW
divers-vis-ari/830nm/
adl83z01hl
ADL-83Z01HL
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Untitled
Abstract: No abstract text available
Text: AlGaInP Visible Laser Diode ADL-66Z01HL D AT E :2 0 0 5 /9 /6 Ver 1 .0 ★ 660nm 100mW 50 oC Reliable High Power Operation • Features 1. Highly reliable / COD free 2. Higher power 3. Monitor PD included • Applications 1. High power Laser modules 2. Industrial laser markers / measuring instruments
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ADL-66Z01HL
660nm
100mW
www/pdf/ari/655nm/
adl-66z01hl
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dl703
Abstract: infrared laser diode DL-7032-001 5v 100mw laser diode 04501 3 MM INFRARED DIODE SANYO
Text: Ordering number : ENN7584 Infrared Laser Diode DL-7032-001 DL-7032-001 Infrared Laser Diode Features Package Dimensions • Lasing wavelength • High output power • Package : 830 nm Typ. : 100 mW at 50°C : ø 9.0 mm Tolerance : ±0.2 Unit : mm 9.0-0.03
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ENN7584
DL-7032-001
dl703
infrared laser diode
DL-7032-001
5v 100mw laser diode
04501
3 MM INFRARED DIODE SANYO
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dl703
Abstract: DL-7032-001 5v 100mw laser diode DL-70
Text: INFRARED LASER DIODE DL-7032-001 Features Ver.1 Dec. 1999 Package Tolerance : ± 0.2 Unit : mm ø9.0 - 0.03 ø5.35 • Lasing wavelength : 830 nm (Typ.) • High output power : 100 mW at 50°C • Package : ø9.0mm ø4.75±0.15 ø3.0 Effective window diameter 2.0min.
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DL-7032-001
100mW
150mW
dl703
DL-7032-001
5v 100mw laser diode
DL-70
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Untitled
Abstract: No abstract text available
Text: Data Sheet HL63142DG AIGaInP Laser Diode 637nm/120mW Features: Outline • Visible light output: 637nm Typ. Optical output power: 120mW CW Single transverse mode Low operating current: 140mA Typ. Low operating voltage: 3.0V Max. Operating temperature: +50°C
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HL63142DG
637nm/120mW
637nm
120mW
140mA
HL63142DG
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RLT85100MG
Abstract: No abstract text available
Text: Laser Diode Technical Data RLT85100MG ABSOLUTE MAXIMUM RATINGS Tc=25 oC DESCRIPTION SYMBOL RATED VALUE Optical Power (mW) Po 100 Operation Temperature (oC) Top -10 to +50 Storage Temperature (oC) Tstg -40 to +85 LD Reverse Voltage (V) VLDR 2 PD Reverse Voltage (V)
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RLT85100MG
100mW
100mW,
RLT85100MG
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TDK HFM
Abstract: GH0781RA2C maximum current rating of diodes catalogs HFM098 P3225M
Text: Laser Diodes GH0781RA2C High Power Laser Diode for MAX. ✕48 GH0781RA2C Speed CD-R Drive 784nm-Pulse 225mW • ■ Outline Dimensions (Unit : mm) ❇2 1.0±0.15 ❇2 0.4±0.1 X 90 ±2 1 2 ❇1 Y ø2.0 Features (1) Maximum optical power output : 120mW (CW)
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GH0781RA2C
784nm-Pulse
225mW)
120mW
784nm
TDK HFM
GH0781RA2C
maximum current rating of diodes catalogs
HFM098
P3225M
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GH0781RA2C
Abstract: 30 A current rating of diodes catalogs Higher current rating of diodes catalogs TDK HFM
Text: Laser Diodes GH0781RA2C High Power Laser Diode for MAX. ✕48 GH0781RA2C Speed CD-R Drive 784nm-Pulse 225mW • ■ Outline Dimensions (Unit : mm) ❇2 1.0±0.15 ❇2 0.4±0.1 X 90 ±2 1 2 ❇1 Y ø2.0 Features (1) Maximum optical power output : 120mW (CW)
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GH0781RA2C
784nm-Pulse
225mW)
120mW
784nm
GH0781RA2C
30 A current rating of diodes catalogs
Higher current rating of diodes catalogs
TDK HFM
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YEDS-18
Abstract: YE-DS YEDS hologram unit GH5R41MA3C NA050 PHP180 Sharp Hologram laser Po-100mW
Text: Hologram Lasers GH5R41MA3C GH5R41MA3C High Power Output Hologram Laser • Features ■ Outline Dimensions for MAX. ✕48 Speed CD-R Drive 1 High power output (pulse MAX. 180mW) (2) For MAX. ◊48 speed CD-R, ◊40 speed CD-ROM (With built-in MIN. 45MHz OPIC❇)
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GH5R41MA3C
180mW)
45MHz
YEDS-18
YE-DS
YEDS
hologram unit
GH5R41MA3C
NA050
PHP180
Sharp Hologram laser
Po-100mW
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Corning Lasertron 980NM
Abstract: Corning Lasertron Lasertron Corning Lasertron pump laser Corning Lasertron pump laser CP 980NM, lasertron
Text: 980nm Standard Pump 980nm Non-Grating Stabilized Pump Laser Rev. 2 Updated 01/16/02 Corning Lasertron • Up to 300mW kink-free power • Packaged with TEC, thermistor, monitor photodiode, ESD protection diode, and getter • Totally floating pinout • Epoxy-free design
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980nm
300mW
14-pin
300mW
Corning Lasertron 980NM
Corning Lasertron
Lasertron
Corning Lasertron pump laser
Corning Lasertron pump laser CP
980NM, lasertron
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Untitled
Abstract: No abstract text available
Text: Data sheet 980nm Pump Laser Module, Uncooled UC9*A Bookham Technology’s UC9*A 980nm Pump Laser Module is a break-through product enabling low-cost, highly reliable amplification for metro, cross-connect or other single/multi-channel amplification applications.
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980nm
100mW,
ISO9001
FM68159
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1550nm Laser Diode with butterfly pin package
Abstract: Photodiode, 1550nm, butterfly package dfb laser diode 1550nm FWHM EM4 laser 14-pin 1550nm Laser Diode butterfly high power 1550nm DFB Laser dfb laser diode high power 100mw laser diode INGAAs InGaAs Photodiode 1550nm laser 1550nm FWHM
Text: 1550nm High Power DFB Laser Datasheet 14 pin Butterfly Package Description The EM4 high power distributed feedback laser DFB is based on direct modulation of the InGaAsP/InP multi-quantum well (MQW) laser diode. The DFB is ideal for transmission distances of up to
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1550nm
170km
HPL-DFB-100-F
1550nm,
100mW,
14pin
hpl-dfb-100-f
1550nm Laser Diode with butterfly pin package
Photodiode, 1550nm, butterfly package
dfb laser diode 1550nm FWHM
EM4 laser 14-pin
1550nm Laser Diode butterfly
high power 1550nm DFB Laser
dfb laser diode high power
100mw laser diode INGAAs
InGaAs Photodiode 1550nm
laser 1550nm FWHM
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GH5R41KA3C
Abstract: Sharp Laser Diode driver YEDS-18 ECG123
Text: Hologram Lasers GH5R41KA3C GH5R41KA3C High Power Output Hologram Laser for • Features ■ Outline Dimensions Unit : mm +0 ø8.2 – 0.025 +0 ø7.5 MAX. ø6.63±0.1 4.8 – 0.1 3.97±0.1 2.8±0.15 2.02±0.1 3.2±0.15 Hologram device 1.2±0.1 0.3 MAX. 1.31
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GH5R41KA3C
162mW)
45MHz
GH5R41KA3C
Sharp Laser Diode driver
YEDS-18
ECG123
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laser diode lifetime
Abstract: 100C 180C 300C
Text: datasheet 8 3 0 n m T E C ool e d l a s e r di o de m o du l e Key features ● Visible light λ = 830nm ● Elliptical beam ● Exceptional wavelength & power stability ● Active temperature control ● Increased laser diode lifetime ● User adjustable optics
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830nm
830nm
100mW.
laser diode lifetime
100C
180C
300C
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YEDS-18
Abstract: TDK HFM low noise 780nm laser diode GH5R41KA3C collimated Laser diode driver apc hfm Sony Hologram laser 780N
Text: Hologram Lasers GH5R41KA3C GH5R41KA3C High Power Output Hologram Laser for • Features ■ Outline Dimensions Unit : mm +0 ø8.2 – 0.025 +0 ø7.5 MAX. ø6.63±0.1 4.8 – 0.1 3.97±0.1 2.8±0.15 2.02±0.1 3.2±0.15 Hologram device 1.2±0.1 0.3 MAX. 1.31
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GH5R41KA3C
162mW)
45MHz
YEDS-18
TDK HFM
low noise 780nm laser diode
GH5R41KA3C
collimated
Laser diode driver apc hfm
Sony Hologram laser
780N
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YEDS-18
Abstract: 780nm 90mW hologram unit 479012 "beam splitter" Sharp Hologram laser 780nm 30mw
Text: Hologram Lasers GH5RA1JA3C GH5RA1JA3C Sample Holding Method, High Power Output • Features ■ Outline Dimensions Unit : mm +0 ø8.2 – 0.025 +0 ø7.5 MAX. ø6.63±0.1 4.8 – 0.1 3.97±0.1 2.8±0.15 2.02±0.1 3.2±0.15 Hologram device 1.2±0.1 0.3 MAX.
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162mW)
45MHz
YEDS-18
780nm 90mW
hologram unit
479012
"beam splitter"
Sharp Hologram laser
780nm 30mw
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P3150
Abstract: GH5R41HA3C Sharp Hologram laser
Text: Hologram Lasers GH5R41HA3C GH5R41HA3C Under development for MAX. ✕24 Speed CD-R Drive • Outline Dimensions (Unit : mm) +0 ø8.2 – 0.025 +0 ø7.5 MAX. ø6.63±0.1 4.8 – 0.1 3.97±0.1 2.8±0.15 2.0±0.1 3.2±0.15 Hologram device Cap glass 1.2±0.1
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GH5R41HA3C
144mW)
45MHz
P3150
GH5R41HA3C
Sharp Hologram laser
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LC93G-20
Abstract: No abstract text available
Text: Data sheet 980nm Pump Laser Module Unstabilised 100-220mW LC93 These lasers are designed as pump sources for Erbium-Doped Fiber Amplifier EDFA applications. Processes and techniques of coupling the fiber to the laser allow high output powers which are very
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980nm
100-220mW
100mW
220mW.
975-985nm
220mW
14-pin
GR-468-CORE
400mW
970nm
LC93G-20
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780NM 30MW Laser-Diode
Abstract: 101MW P1-10154 Sharp Hologram laser P3150
Text: Hologram Lasers GH5RA1HA3C GH5RA1HA3C Under development Hologram Laser for ✕16 Speed CD-R Drive • Outline Dimensions (Unit : mm) +0 ø8.2 – 0.025 +0 ø7.5 MAX. ø6.63±0.1 4.8 – 0.1 3.97±0.1 2.8±0.15 2.0±0.1 3.2±0.15 Hologram device Cap glass
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144mW)
45MHz
780NM 30MW Laser-Diode
101MW
P1-10154
Sharp Hologram laser
P3150
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FLD148G3NL
Abstract: Laser InP FLD148G3NL-B single power diode package 1480 nm laser diode
Text: FLD148G3NL-B InGaAsP/InP Laser Diode Module FEATURES • High output power • Hermetically sealed 14-pin dual-in-line package with monitor photodiode, thermoelectric cooler, thermistor and single mode fiber APPLICATIONS • Pumping light source for EDFA DESCRIPTION
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FLD148G3NL-B
14-pin
FLD148G3NL
Laser InP
FLD148G3NL-B
single power diode package
1480 nm laser diode
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NEC LASER DIODE butterfly package
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ NEC LASER DIODE MODULE NDL7540P 1480 nm OPTICAL FIBER APPLICATIONS InGaAsP MQW-DFB LASER DIODE MODULE FEATURES • InGaAsP Strained M Q W DC-PBH laser diode • H igh output power Pf=110mW @ !F=500m A CW • Internal optical isolator, therm o electric cooler and m onitor photo diode
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NDL7540P
110mW
500mA
-20dB)
10log
100mW
500mA
NEC LASER DIODE butterfly package
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