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    600 VOLT MOSFET Search Results

    600 VOLT MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    600 VOLT MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: OM5227SC OM5229SC OM5231SC OM5228SC OM5230SC OM5232SC HIGH EFFICIENCY RECTIFIER AND POWER SCHOTTKY IN ONE HERMETIC PACKAGE 15 Amp, 50 To 600 Volt, 35 n sec Rectifier And 15 Amp, 45 Volt Schottky Combined In JEDEC TO-258AA Package FEATURES • Small Size, High Current


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    OM5227SC OM5229SC OM5231SC OM5228SC OM5230SC OM5232SC O-258AA OM803 MIL-S-19500, PDF

    MOSFET 50 amp 1000 volt

    Abstract: 300 Volt mosfet schematic circuit 300 Amp mosfet 1000 volt mosfet 200 Amp mosfet 60 amp 600 Volt Diode amp mosfet schematic circuit OM5232 rectifier diode 6 amp 400 volt OM5231SC
    Text: OM5227SC OM5229SC OM5231SC OM5228SC OM5230SC OM5232SC HIGH EFFICIENCY RECTIFIER AND POWER SCHOTTKY IN ONE HERMETIC PACKAGE 15 Amp, 50 To 600 Volt, 35 n sec Rectifier And 15 Amp, 45 Volt Schottky Combined In JEDEC TO-258AA Package FEATURES • • • • •


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    OM5227SC OM5229SC OM5231SC OM5228SC OM5230SC OM5232SC O-258AA OM803 MIL-S-19500, MOSFET 50 amp 1000 volt 300 Volt mosfet schematic circuit 300 Amp mosfet 1000 volt mosfet 200 Amp mosfet 60 amp 600 Volt Diode amp mosfet schematic circuit OM5232 rectifier diode 6 amp 400 volt OM5231SC PDF

    MOSFET 50 amp 1000 volt

    Abstract: 1000 volt mosfet amp mosfet schematic circuit 300 Amp mosfet OM5227SC OM5228SC OM5229SC OM5230SC OM5231SC OM5232SC
    Text: OM5227SC OM 5229SC OM5231SC OM5228SC OM5230SC OM5232SC HIGH EFFICIENCY RECTIFIER AND POWER SCHOTTKY IN ONE HERMETIC PACKAGE 15 Amp, 50 To 600 Volt, 35 n sec Rectifier And 15 Amp, 45 Volt Schottky Combined in JEDEC TO-258AA Package FEATURES • Small Size, High Current


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    OM5227SC OM5229SC OM5231SC OM5228SC OM5230SC OM5232SC O-258AA OM803 MIL-S-19500, MOSFET 50 amp 1000 volt 1000 volt mosfet amp mosfet schematic circuit 300 Amp mosfet OM5232SC PDF

    4982

    Abstract: ds34c87 IGBT GS 125OC SFH6186-4 SPM6G070-060D SPM6M020-060D
    Text: SENSITRON SEMICONDUCTOR SPM6M020-060D TECHNICAL DATA Datasheet 4982, Rev. – Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation, 600 VOLT, 20 AMP Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER SYMBOL


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    SPM6M020-060D /-20V 4982 ds34c87 IGBT GS 125OC SFH6186-4 SPM6G070-060D SPM6M020-060D PDF

    IXFM20N60

    Abstract: SHD239608
    Text: SHD239608 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 703, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 600 Volt, 0.35 Ohm MOSFET • Isolated and Hermetically Sealed • Surface Mount Package • Electrically equivalent to IXFM20N60 MAXIMUM RATINGS


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    SHD239608 IXFM20N60 IXFM20N60 SHD239608 PDF

    IXTM20N60

    Abstract: SHD239607 mosfet 300V 10A type
    Text: SHD239607 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 600 Volt, 0.35 Ohm MOSFET • Isolated and Hermetically Sealed • Surface Mount Package • Electrically equivalent to IXTM20N60 MAXIMUM RATINGS


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    SHD239607 IXTM20N60 IXTM20N60 SHD239607 mosfet 300V 10A type PDF

    mosfet 300v 10a

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD239607 TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed œ Surface Mount Package œ Electrically equivalent to IXTM20N60 MAXIMUM RATINGS


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    SHD239607 IXTM20N60 VGS631) SHD239607 mosfet 300v 10a PDF

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD239607 TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed œ Surface Mount Package œ Electrically equivalent to IXTM20N60 MAXIMUM RATINGS


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    SHD239607 IXTM20N60 PDF

    mosfet 300V 10A

    Abstract: 300v 10 amp n-channel mosfet
    Text: SENSITRON SEMICONDUCTOR SHD225608 TECHNICAL DATA DATA SHEET 915, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 20 Amp, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT


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    SHD225608 250mA SHD225608 O-254 mosfet 300V 10A 300v 10 amp n-channel mosfet PDF

    Amp. mosfet 1000 watt

    Abstract: SHD225608
    Text: SENSITRON SEMICONDUCTOR SHD225608 TECHNICAL DATA DATA SHEET 915, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 20 Amp, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT


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    SHD225608 250mA Amp. mosfet 1000 watt SHD225608 PDF

    sic marking e6

    Abstract: sic marking e7
    Text: SENSITRON SEMICONDUCTOR SPM1002 Technical Data DATASHEET 5278, Rev. - THREE-PHASE IGBT BRIDGE with SiC DIODES, BRAKE MOSFET and INTEGRATED BRAKE RESISTOR DESCRIPTION: • 600 VOLT, 30 AMP, THREE PHASE IGBT BRIDGE  FAST SWITCHING 3RD GENERATION IGBT 


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    SPM1002 -700C 2000C 58iconductor. sic marking e6 sic marking e7 PDF

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD218513 SHD218513A SHD218513B TECHNICAL DATA DATA SHEET 747, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.60 Ohm, 11A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRFPC50


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    SHD218513 SHD218513A SHD218513B IRFPC50 1/W54) PDF

    Untitled

    Abstract: No abstract text available
    Text: SHD258624 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4975, REV. - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 600 VOLT, 44 AMP, 0.15 RDS ON MOSFET IN A HERMETIC TO-267 PACKAGE. MAX. RATINGS / ELECTRICAL CHARACTERISTICS (AT Tj=25 C UNLESS OTHERWISE SPECIFIED).


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    SHD258624 O-267 20VDC, PDF

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD218513 SHD218513A SHD218513B TECHNICAL DATA DATA SHEET 747, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.60 Ohm, 11A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRFPC50


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    SHD218513 SHD218513A SHD218513B IRFPC50 PDF

    MOSFET 50 amp 1000 volt

    Abstract: 50 Amp 100 volt mosfet 400 amp 20 volt rectifier 50 Amp 300 volt diode 15 amp 1000 Volt Rectifier OM5227SC OM5228SC OM5229SC OM5230SC OM5231SC
    Text: b7fiTQ73 Q Q G G 7 M Ô 43E D 4 ¡OMNI OM5227SC OM5228SC OM5229SC OM5231SC OM523QSC OM5232SC HIGH EFFICIENCY RECTIFIER AND POWER SCHOTTKY IN ONE HERMETIC PACKAGE 0 H N I R E L CORP 15 Ampj 50 To 600 Volt, 35 n sec Rectifier And 15 Amp, 45 Volt Schottky Combined Irr»


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    b7fiTQ73 OM5227SC OM5229SC OM5231SC OM5228SC OM5230SC OM5232SC O-258AA OM803 MOSFET 50 amp 1000 volt 50 Amp 100 volt mosfet 400 amp 20 volt rectifier 50 Amp 300 volt diode 15 amp 1000 Volt Rectifier PDF

    SMM70N10

    Abstract: SFF70N10M SFF70N10Z
    Text: SFF70N10M SFF70N10Z SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 70 AMP 600 VOLT 0.030Ω N-CHANNEL POWER MOSFET DESIGNER'S DATA SHEET FEATURES: • Rugged construction with poly silicon gate


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    SFF70N10M SFF70N10Z SMM70N10 O-254 O-254Z 125oC) SFF70N10M SFF70N10Z PDF

    SFF70N10M

    Abstract: SMM70N10
    Text: S im ili PREL.MINARY SFF70N10M SFF70N10WZ SOLID STATE DEVICES, INC CA 14849 Firestone Boulevard - La Mirada, 90638 Phone: (714 670-SSDI (7734) Fax: (714) 522-7424 Designer’s Datasheet 70 AMP 600 VOLT 0.030 Q N-CHANNEL POWER MOSFET | FEATURES: • •


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    SFF70N10M SFF70N10WZ 670-SSDI SMM70N10 O-254 O-254Z PDF

    rectifier diode with piv of 30v

    Abstract: power diode with piv of 30v 500 watt half bridge schematic DIODE RECTIFIER BRIDGE 25A, 50V BRIDGE-RECTIFIER PFCM-1500C
    Text: SENSITRON SEMICONDUCTOR PFCM-1500C TECHNICAL DATA DATA SHEET 4159, REV. – NON-HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • • • • SEALED PACKAGE 600 VOLT, 0.21 OHM, 26.0A MOSFET ULTRAFAST DIODE RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING


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    PFCM-1500C rectifier diode with piv of 30v power diode with piv of 30v 500 watt half bridge schematic DIODE RECTIFIER BRIDGE 25A, 50V BRIDGE-RECTIFIER PFCM-1500C PDF

    15N60

    Abstract: K 15N60
    Text: Tfl SAMSUNG SEMICO NDUCT OR INC ^ r E SSM15N55/15N60 SSH15N55/15N60 OODSaiD T- Ä ^ 4 NNELm i POWER MOSFETS - e iÄ ” Preliminary Specifications PRODUCT SUMMARY 600 Volt, 0.5 Ohm SFET Part Number Vos RDS on SSM15N55 550V 0.5Q 15A SSM15N60


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    SSM15N55/15N60 SSH15N55/15N60 SSM15N55 SSM15N60 SSH15N55 SSH15N60 15N60 K 15N60 PDF

    25A, 50V BRIDGE-RECTIFIER

    Abstract: PFCM-1500M rectifier diode piv 26A RECTIFIER BRIDGE 600 watt amps schematic
    Text: SENSITRON SEMICONDUCTOR PFCM-1500M TECHNICAL DATA DATA SHEET 4160, REV. – HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • HERMETIC PACKAGE • 600 VOLT, 0.21 OHM, 26.0A MOSFET • • RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING ULTRAFAST DIODE


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    PFCM-1500M 25A, 50V BRIDGE-RECTIFIER PFCM-1500M rectifier diode piv 26A RECTIFIER BRIDGE 600 watt amps schematic PDF

    500 watt half bridge schematic

    Abstract: 25A, 50V BRIDGE-RECTIFIER PFCM-1500C
    Text: SENSITRON SEMICONDUCTOR PFCM-1500C TECHNICAL DATA DATA SHEET 4159, REV. – NON-HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • • • • SEALED PACKAGE 600 VOLT, 0.21 OHM, 26.0A MOSFET ULTRAFAST DIODE RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING


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    PFCM-1500C 500 watt half bridge schematic 25A, 50V BRIDGE-RECTIFIER PFCM-1500C PDF

    500 watt half bridge schematic

    Abstract: 26A RECTIFIER BRIDGE 25A, 50V BRIDGE-RECTIFIER PFCM-1500M IR rectifier diode 100A 800V power diode with piv of 30v
    Text: SENSITRON SEMICONDUCTOR PFCM-1500M TECHNICAL DATA DATA SHEET 4160, REV. – HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • HERMETIC PACKAGE • 600 VOLT, 0.21 OHM, 26.0A MOSFET • • RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING ULTRAFAST DIODE


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    PFCM-1500M 500 watt half bridge schematic 26A RECTIFIER BRIDGE 25A, 50V BRIDGE-RECTIFIER PFCM-1500M IR rectifier diode 100A 800V power diode with piv of 30v PDF

    SML60EUZ06B

    Abstract: No abstract text available
    Text: SML60EUZ06B Enhanced Ultrafast Recovery Diode 600 Volt, 60Amp TECHNOLOGY Back of Case The planar passivated and enhanced ultrafast recovery Cathode diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with


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    SML60EUZ06B 60Amp 60EUZ06B O-247 SML60EUZ06B PDF

    CW2013

    Abstract: sic marking e6
    Text: SENSITRON SEMICONDUCTOR SPM1001 Technical Data DATASHEET 5361, Rev. - THREE-PHASE IGBT BRIDGE with SiC DIODES, BRAKE MOSFET and INTEGRATED BRAKE RESISTOR DESCRIPTION: • 600 VOLT, 50 AMP, THREE PHASE IGBT BRIDGE  SILICON CARBIDE SiC 20A 600V ANTI PARALLEL DIODES – ZERO RECOVERY AND NO


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    SPM1001 CW2013 sic marking e6 PDF