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    600 VOLT N CHANNEL POWER MOSFET Search Results

    600 VOLT N CHANNEL POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    600 VOLT N CHANNEL POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTM20N60

    Abstract: SHD239607 mosfet 300V 10A type
    Text: SHD239607 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 600 Volt, 0.35 Ohm MOSFET • Isolated and Hermetically Sealed • Surface Mount Package • Electrically equivalent to IXTM20N60 MAXIMUM RATINGS


    Original     		PDF SHD239607 IXTM20N60 IXTM20N60 SHD239607 mosfet 300V 10A type

    mosfet 300v 10a

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD239607 TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed œ Surface Mount Package œ Electrically equivalent to IXTM20N60 MAXIMUM RATINGS


    Original     		PDF SHD239607 IXTM20N60 VGS631) SHD239607 mosfet 300v 10a

    IXFM20N60

    Abstract: SHD239608
    Text: SHD239608 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 703, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 600 Volt, 0.35 Ohm MOSFET • Isolated and Hermetically Sealed • Surface Mount Package • Electrically equivalent to IXFM20N60 MAXIMUM RATINGS


    Original     		PDF SHD239608 IXFM20N60 IXFM20N60 SHD239608

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD239607 TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed œ Surface Mount Package œ Electrically equivalent to IXTM20N60 MAXIMUM RATINGS


    Original     		PDF SHD239607 IXTM20N60

    mosfet 300V 10A

    Abstract: 300v 10 amp n-channel mosfet
    Text: SENSITRON SEMICONDUCTOR SHD225608 TECHNICAL DATA DATA SHEET 915, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 20 Amp, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT


    Original     		PDF SHD225608 250mA SHD225608 O-254 mosfet 300V 10A 300v 10 amp n-channel mosfet

    Amp. mosfet 1000 watt

    Abstract: SHD225608
    Text: SENSITRON SEMICONDUCTOR SHD225608 TECHNICAL DATA DATA SHEET 915, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 20 Amp, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT


    Original     		PDF SHD225608 250mA Amp. mosfet 1000 watt SHD225608

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD218513 SHD218513A SHD218513B TECHNICAL DATA DATA SHEET 747, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.60 Ohm, 11A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRFPC50


    Original     		PDF SHD218513 SHD218513A SHD218513B IRFPC50 1/W54)

    Untitled

    Abstract: No abstract text available
    Text: SHD258624 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4975, REV. - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 600 VOLT, 44 AMP, 0.15 RDS ON MOSFET IN A HERMETIC TO-267 PACKAGE. MAX. RATINGS / ELECTRICAL CHARACTERISTICS (AT Tj=25 C UNLESS OTHERWISE SPECIFIED).


    Original     		PDF SHD258624 O-267 20VDC,

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD218513 SHD218513A SHD218513B TECHNICAL DATA DATA SHEET 747, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.60 Ohm, 11A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRFPC50


    Original     		PDF SHD218513 SHD218513A SHD218513B IRFPC50

    IRFPC50

    Abstract: SHD218513 SHD218513A SHD218513B
    Text: SHD218513 SHD218513A SHD218513B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 747, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 600 Volt, 0.60 Ohm, 11A MOSFET • Isolated Hermetic Metal Package • Fast Switching • Low RDS on • Electrically Equivalent to IRFPC50


    Original     		PDF SHD218513 SHD218513A SHD218513B IRFPC50 IRFPC50 SHD218513 SHD218513A SHD218513B

    SMM70N10

    Abstract: SFF70N10M SFF70N10Z
    Text: SFF70N10M SFF70N10Z SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 70 AMP 600 VOLT 0.030Ω N-CHANNEL POWER MOSFET DESIGNER'S DATA SHEET FEATURES: • Rugged construction with poly silicon gate


    Original     		PDF SFF70N10M SFF70N10Z SMM70N10 O-254 O-254Z 125oC) SFF70N10M SFF70N10Z

    IX6R11P7

    Abstract: No abstract text available
    Text: IX6R11 600 Volt, 6 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 600V • ± 50V/ns dV/dt immunity


    Original     		PDF IX6R11 IX6R11 IX6R11S6 IX6R11S3 IX6R11P7

    10M90S

    Abstract: IXTH14N60P IX6R11 IX6R11S3 IX6R11P7 IXFH14N100Q IXCP 10M90 DSEI12-10A igbt 500V 22A
    Text: IX6R11 600 Volt, 6 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 600V • ± 50V/ns dV/dt immunity


    Original     		PDF IX6R11 IX6R11 IX6R11S6 IX6R11S3 10M90S IXTH14N60P IX6R11S3 IX6R11P7 IXFH14N100Q IXCP 10M90 DSEI12-10A igbt 500V 22A

    SHD224805

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD224805 TECHNICAL DATA DATA SHEET 5159, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 600 Volt, 60A, 55 milli-Ohm • Isolated Hermetic Metal Package • Very low Gate Charge • Very Low RDS on • Low package inductance-easy to drive and protect


    Original     		PDF SHD224805 SHD224805

    600 volt mosfet

    Abstract: SHD225515
    Text: SENSITRON SEMICONDUCTOR SHD225515 TECHNICAL DATA DATA SHEET 2027, REV. A HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 600 VOLT, 16 AMP, 0.40 OHM MOSFET IN A HERMETIC TO-254 PACKAGE. MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD225515 O-254 250mA 600 volt mosfet SHD225515

    SFF70N10C

    Abstract: SMM70N10
    Text: SFF70N10C SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 70 AMP 600 VOLT 0.030Ω N-CHANNEL POWER MOSFET DESIGNER'S DATA SHEET FEATURES: • Rugged construction with poly silicon gate • Ultra low RDS (on) and high transconductance


    Original     		PDF SFF70N10C SMM70N10 O-254 125oC) SFF70N10C

    4410 SO-8

    Abstract: irf7389pbf IRF7343TRPBF IRG4PH30KPBF IRG4PC40FD IRFP4232PBF IRG4PC40UPBF IRG4PH50SPBF 247AA IRFR220NTRPBF
    Text: 1967-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 1967 25 Power MOSFETs and IGBTs RoHS N Channel, 150 Volt VDSS VGS V ID (A) Power (W) RDS(on) (Ω) RTH (JC) (°C/W) Gate Drive Package EACH 70016952 70016954 70017481 70017261 70017492 70017500 70017262 70017029


    Original     		PDF IRF3315PBF IRF3415PBF IRF3415SPBF IRFB23N15DPBF IRFB41N15DPBF IRFB52N15DPBF IRFB61N15DPBF IRFL4315PBF IRFPS3815PBF IRFS52N15DPBF 4410 SO-8 irf7389pbf IRF7343TRPBF IRG4PH30KPBF IRG4PC40FD IRFP4232PBF IRG4PC40UPBF IRG4PH50SPBF 247AA IRFR220NTRPBF

    irfp460pbf

    Abstract: irf740 IRFP360PBF IRFL9014PBF IRF840PBF IRFP064 IRF9630PBF IRFD9110 339 D-PAK IRLL110
    Text: 2008-2012:QuarkCatalogTempNew 9/20/12 4:30 PM Page 2008 INTERCONNECT TEST & MEASUREMENT 25 Power MOSFETs P Channel Power MOSFETs RoHS P Channel, –60 Volt VDSS D-PAK Stock No. Mfr.’s Type VGS V ID (A) Power (W) RDS(on) (Ω) RTH (JC) (°C/W) Gate Drive


    Original     		PDF IRF9Z14PBF IRF9Z14SPBF IRFR9024PBF IRFD9024PBF IRFI9Z24GPBF IRFI9Z34GPBF IRFL9014PBF IRFR9014PBF IRFU9014PBF IRFD9010PBF irfp460pbf irf740 IRFP360PBF IRF840PBF IRFP064 IRF9630PBF IRFD9110 339 D-PAK IRLL110

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT DATASHEET AAT4910 FastSwitchTM 28V Half-Bridge Dual N-Channel MOSFET Driver Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT4910 is a 28V half- bridge dual MOSFET driver for high- current DC- DC convert er and m ot or driver applicat ions. I t drives bot h high- side and low- side N- channel


    Original     		PDF AAT4910 AAT4910 SC70JW-

    HC08MP16

    Abstract: ac motor speed control circuit diagram with IGBT schematic diagram motor control using pwm module 1 HP SINGLE PHASE induction motor speed control using pwm inverter use igbt for 3 phase induction motor PWM generator for IGBT DC MOTOR SPEED CONTROL USING IGBT MGB20N40CL circuit diagram MC33153 12 volt dc to 220 volt ac inverter schematic
    Text: BR1480/D Silicon Solutions for Off Line Motor Drives • Application Specific MCU’s • Optoisolators • MOS Gate Drivers and Control IC’s • Discrete Insulated Gate Bipolar Transistors • Input Rectifiers • Hybrid IGBT Power Modules • High Voltage MOSFETS for Power Supply


    Original     		PDF BR1480/D K1TITC122/D K1TITC132/D HC08MP16 ac motor speed control circuit diagram with IGBT schematic diagram motor control using pwm module 1 HP SINGLE PHASE induction motor speed control using pwm inverter use igbt for 3 phase induction motor PWM generator for IGBT DC MOTOR SPEED CONTROL USING IGBT MGB20N40CL circuit diagram MC33153 12 volt dc to 220 volt ac inverter schematic

    TRANSISTOR MOTOROLA MAC 223

    Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
    Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),


    Original     		PDF

    SFF70N10M

    Abstract: SMM70N10
    Text: S im ili PREL.MINARY SFF70N10M SFF70N10WZ SOLID STATE DEVICES, INC CA 14849 Firestone Boulevard - La Mirada, 90638 Phone: (714 670-SSDI (7734) Fax: (714) 522-7424 Designer’s Datasheet 70 AMP 600 VOLT 0.030 Q N-CHANNEL POWER MOSFET | FEATURES: • •


    OCR Scan     		PDF SFF70N10M SFF70N10WZ 670-SSDI SMM70N10 O-254 O-254Z

    SFF70N10C

    Abstract: SMM70N10
    Text: SFF70N10C ^OLID STATE DEVICES, INC *<»49 Firestone Boulevard La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 70 AMP 600 VOLT 0.030 Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with poly silicon gate Ultra Low RDS(on) and high transconductance


    OCR Scan     		PDF 670-SSDI SFF70N10C SMM70N10 O-254 SFF70N10C

    SFF16N60NC

    Abstract: No abstract text available
    Text: SFF16N60NC SOLID STATE DEVICES, INC 19 Firestone Boulevard La Mirada,CA 90638 . .tone: 714 670-SSDI (7734) Fax: (714) 522-7424 16.5 AMP 600 VOLT 0.40 £2 N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: • ■ ■ ■ ■ ■ ■ ■ ■ ■ Rugged construction with poly silicon gate


    OCR Scan     		PDF 670-SSDI SFF16N60NC APT6040N O-258 SFF16N60NC