Untitled
Abstract: No abstract text available
Text: Spec.No.IGBT-SP-10011-R3 P1/4 6in1 IGBT Module MBB600TV6A PRELIMINARY SPECIFICATION Silicon N-channel IGBT 1. FEATURES * High speed, low loss IGBT module. * Low thermal impedance due to direct liquid cooling. * High reliability, high durability module. 2. ABSOLUTE MAXIMUM RATINGS (Tc=25oC )
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IGBT-SP-10011-R3
MBB600TV6A
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-06005 R3 P1/8 MBN600E45A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES High speed, low loss IGBT module. Low driving power due to low input capacitance MOS gate. Low noise due to ultra soft fast recovery diode.
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IGBT-SP-06005
MBN600E45A
000cycles)
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MBN600E45A
Abstract: 600A 500v igbt L130N
Text: IGBT MODULE Spec.No.IGBT-SP-06005 R2 P1/8 MBN600E45A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.
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IGBT-SP-06005
MBN600E45A
000cycles)
MBN600E45A
600A 500v igbt
L130N
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Untitled
Abstract: No abstract text available
Text: Dual IGBT Module Spec.No.IGBT-SP-10006-R4 MBM600F17D PRELIMINARY SPECIFICATION Silicon N-channel IGBT FEATURES * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode.
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IGBT-SP-10006-R4
MBM600F17D
000cycles)
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Untitled
Abstract: No abstract text available
Text: Dual IGBT Module Spec.No.IGBT-SP-10006-R4 MBM600F17D PRELIMINARY SPECIFICATION Silicon N-channel IGBT FEATURES * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode.
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IGBT-SP-10006-R4
MBM600F17D
000cycles)
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MBN600E45A
Abstract: 600A 500v igbt
Text: Spec.No.IGBT-SP-06005R0 IGBT MODULE MBN600E45A Preliminary Specification. Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.
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IGBT-SP-06005R0
MBN600E45A
000cycles)
PDE-N1200D33C-0
MBN600E45A
600A 500v igbt
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CM600HG-130H
Abstract: No abstract text available
Text: CM600HG-130H Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Single IGBTMOD HVIGBT Module 600 Amperes/6500 Volts A D D D M8 NUTS (6 TYP.) C C C F E B F E E L E E G M Description: Powerex IGBTMOD™ Modules are designed for use in switching
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CM600HG-130H
Amperes/6500
100kHz
CM600HG-130H
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CM600HG-130H
Abstract: CM600HG IGBT 6500v cm508
Text: CM600HG-130H Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Single IGBTMOD HVIGBT Module 600 Amperes/6500 Volts A D D D M8 NUTS (6 TYP.) C C C F E B F E E L E E G M Description: Powerex IGBTMOD™ Modules are designed for use in switching
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CM600HG-130H
Amperes/6500
100kHz
CM600HG-130H
CM600HG
IGBT 6500v
cm508
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MBN600C20
Abstract: 600A igbt 100khz
Text: IGBT MODU ODULE MBN600C20 Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES 2-M8 * High thermal fatigue durability. 2-M4 delta Tc=70°C,N>20,000cycles * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD).
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MBN600C20
000cycles)
125erse
600mA
100KHz
150nH
150nH,
PDE-N600C20-0
MBN600C20
600A igbt 100khz
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MBN600C33A
Abstract: MBN600C33
Text: IGBT MODU ODULE MBN600C33A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES * High thermal fatigue durability. 2-M8 2-M4 delta Tc=70°C,N>20,000cycles * low noise due to built-in free-wheeling 4-φ5.8 diode - ultra soft fast recovery diode(USFD).
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MBN600C33A
000cycles)
600mA
100KHz
150nH
150nH,
PDE-N600C
MBN600C33A
MBN600C33
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-04010R5 P1 MBM600E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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IGBT-SP-04010R5
MBM600E17D
000cycles)
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-04010R6 MBM600E17D Silicon N-channel IGBT FEATURES High speed, low loss IGBT module. Low driving power due to low input capacitance MOS gate. Low noise due to ultra soft fast recovery diode. High reliability, high durability module.
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IGBT-SP-04010R6
MBM600E17D
000cycles)
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Measurement of stray inductance for IGBT
Abstract: circuit diagram for igbt hitachi igbt igbt module p11
Text: IGBT MODULE Spec.No.IGBT-SP-04010R4 P1 MBM600E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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IGBT-SP-04010R4
MBM600E17D
000cycles)
Measurement of stray inductance for IGBT
circuit diagram for igbt
hitachi igbt
igbt module p11
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-04010R6 MBM600E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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IGBT-SP-04010R6
MBM600E17D
000cycles)
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM600E2Y-34H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600E2Y-34H ● IC . 600A ● VCES . 1700V
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CM600E2Y-34H
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hvigbt diode
Abstract: CM600E2Y-34H
Text: MITSUBISHI HVIGBT MODULES CM600E2Y-34H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600E2Y-34H ● IC . 600A ● VCES . 1700V
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CM600E2Y-34H
hvigbt diode
CM600E2Y-34H
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CM600HB-90H
Abstract: 7400 ic diagram
Text: MITSUBISHI HVIGBT MODULES CM600HB-90H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM600HB-90H ● IC . 600A ● VCES . 4500V
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CM600HB-90H
0135K/
CM600HB-90H
7400 ic diagram
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PER12
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM600DY-34H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600DY-34H ● IC . 600A ● VCES . 1700V
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CM600DY-34H
PER12
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Converter for Induction Heating
Abstract: igbt for HIGH POWER induction heating CM600DY-34H
Text: MITSUBISHI HVIGBT MODULES CM600DY-34H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600DY-34H ● IC . 600A ● VCES . 1700V
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CM600DY-34H
Converter for Induction Heating
igbt for HIGH POWER induction heating
CM600DY-34H
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CM600E2Y-34H
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM600E2Y-34H PRE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE
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CM600E2Y-34H
080K/W
CM600E2Y-34H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM600HG-130H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600HG-130H ● IC . 600A ● VCES . 6500V
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CM600HG-130H
/-15V
000A/Â
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CM600DY-34H
Abstract: transistor su 312
Text: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM600DY-34H PRE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE
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CM600DY-34H
080K/W
CM600DY-34H
transistor su 312
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mbm600
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-07034 R1 MBM600E17E TARGET SPEC. Silicon N-channel IGBT 1700V E version OUTLINE DRAWING Unit in mm FEATURES * Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. * Low driving power: Low input capacitance
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IGBT-SP-07034
MBM600E17E
000cycles)
mbm600
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CM600HB-90H
Abstract: bipolar transistor 124 e
Text: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM600HB-90H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules
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CM600HB-90H
015K/W
030K/W
CM600HB-90H
bipolar transistor 124 e
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