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    607JF Price and Stock

    Vishay Intertechnologies G24071935607JFC000

    Resistor High Power Wirewound 0.56 Ohm 5% 7W ?100ppm/?C to ?180ppm/?C Conformal PC Pin T/R - Tape and Reel (Alt: G24071935607JFC000)
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    Avnet Americas G24071935607JFC000 Reel 8 Weeks 500
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    • 1000 $0.80725
    • 10000 $0.75946
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    NEC Electronics Group UPD42S18165LG5A60-7JF

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    Bristol Electronics UPD42S18165LG5A60-7JF 140
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    NEC Electronics Group UPD42S4260G5-60-7JF

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    Bristol Electronics UPD42S4260G5-60-7JF 120 1
    • 1 $8.96
    • 10 $4.48
    • 100 $3.8824
    • 1000 $3.8824
    • 10000 $3.8824
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    NEC Electronics Group UPD42S18165G5-60-7JF

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    Bristol Electronics UPD42S18165G5-60-7JF 77 1
    • 1 $9
    • 10 $6.75
    • 100 $5.4
    • 1000 $5.4
    • 10000 $5.4
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    NEC Electronics Group D42S4260G5-60-7JF

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    Bristol Electronics D42S4260G5-60-7JF 45 1
    • 1 $8.96
    • 10 $4.48
    • 100 $4.1816
    • 1000 $4.1816
    • 10000 $4.1816
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    607JF Datasheets Context Search

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    UPD4265160-A60

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD4264160, 4265160 6 4 M -B IT D YN A M IC RAM 4 M -W O R D BY 16-BIT, FAST PAGE M O DE Description The /iPD 4264160,4265160 are 4,194,304 words by 16 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.


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    PDF uPD4264160 uPD4265160 16-BIT, 50-prn JPD4264160-A50 /PD4265160-A50 /PD4264160-A60 UPD4265160-A60 S50G5-80-7JF3 /iPD4264160,

    Untitled

    Abstract: No abstract text available
    Text: bMS7SaS DOMSSSÜ 84T B N E C E MOS INTEGRATED C IR CU IT /¿PD42S16160,42S17160,42S18160 16 M BIT D Y N A M IC RAM FAST PAGE M O D E & BYTE R E A D /W R IT E M O DE - P R E L I M I N A R Y -DESCRIPTIO N The NEC ; ì PD42S16160, ¿¿PD42S17160 and /¿PD42S18160 are 1 048 576 words by 16 b it s dynamic


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    PDF PD42S16160 42S17160 42S18160 PD42S16160, PD42S17160 PD42S18160 P32VF-100-475A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET / MOS INTEGRATED CIRCUIT //PD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ¿¡PD42S16160L, 4216160L, 42S18160L, 4218160Lare 1,048, 576 words by 16 bits CMOS dynamic RAMs.


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    PDF uPD42S16160L uPD4216160L uPD42S18160L uPD4218160L 16-BIT, PD42S16160L, 4216160L, 42S18160L, 4218160Lare

    d4265165

    Abstract: D4265165G 65A50
    Text: DATA SHEET jU PD 42S 65165, 4265165 MOS INTEGRATED CIRCUIT 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The ¿¿PD42S65165, 4265165 are 4,194,304 w ords by 16 bits CMOS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.


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    PDF 16-BIT, uPD42S65165 uPD4265165 PD42S65165 50-pin d4265165 D4265165G 65A50

    BIPD

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ffP P 4264165, 4265165 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAQE MODE EDO , BYTE READ/WRITE MODE D escription The /iPD4264165,4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional hyper page mode


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    PDF 16-BIT, uPD4264165 50-pin jjPD4264165-A50 jjPD4265165-A50 /jPD426416S-A60 iPD4265165-A60 -60-7JF PD4264165, 426St65 BIPD