60N60C2
Abstract: ixgh60n60c2
Text: Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs Symbol Test Conditions VCES IC25 VCE sat tfi typ IXGH 60N60C2 IXGT 60N60C2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20
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60N60C2
IC110
O-247
O-268
728B1
123B1
728B1
065B1
60N60C2
ixgh60n60c2
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IXGR60N60C2
Abstract: No abstract text available
Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings
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ISOPLUS247TM
60N60C2
60N60C2D1
IC110
IF110
IXGR60N60C2D1)
ISOPLUS247
2x61-06A
IXGR60N60C2
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60N60C2
Abstract: 60n60c 60N60C2D ISOPLUS247 PLUS247 60N60
Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface IXGR_C2 VCES IC25 VCE(sat) tfi(typ) IXGR_C2D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600
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ISOPLUS247TM
60N60C2
60N60C2D1
IC110
728B1
123B1
728B1
065B1
60N60C2
60n60c
60N60C2D
ISOPLUS247
PLUS247
60N60
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IXGN60N60C2
Abstract: 60N60C2 60N60C2D1 ixgn60N60 IXGN60N60C2D1 IGBT 60N60C2D1 siemens igbt siemens igbt 75a high current igbt 60N60C2D
Text: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IXGN 60N60C2 IXGN60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) E Symbol Test Conditions V CES TJ = 25°C to 150°C D1 E Maximum Ratings 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW = 600 V = 75 A
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60N60C2
IXGN60N60C2D1
OT-227B,
IC110
2x61-06A
IXGN60N60C2
60N60C2
60N60C2D1
ixgn60N60
IGBT 60N60C2D1
siemens igbt
siemens igbt 75a
high current igbt
60N60C2D
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60N60C2D1
Abstract: 60N60C2 DI IGBT 60N60C2D1 C9VI
Text: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IXGN 60N60C2 IXGN60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) E Symbol Test Conditions V CES TJ = 25°C to 150°C D1 E Maximum Ratings 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW = 600 V = 75 A
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60N60C2
IXGN60N60C2D1
IC110
OT-227B,
2x61-06A
60N60C2D1
60N60C2 DI
IGBT 60N60C2D1
C9VI
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60N60C2
Abstract: 60N60C2D1
Text: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IXGN 60N60C2 IXGN60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) E Symbol Test Conditions V CES TJ = 25°C to 150°C D1 E Maximum Ratings 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW = 600 V = 75 A
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60N60C2
IXGN60N60C2D1
IC110
OT-227B,
2x61-06A
60N60C2D1
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7N60B equivalent
Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
Text: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain
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7N60B-2X
7N60C-2X
16N60B2-3X
16N60C2-3X
30N60B2-4X
30N60C2-4X
40N60B2-5Y
40N60C2-5Y
60N60B2-7Y
60N60C2-7Y
7N60B equivalent
10n60b
ixgd
28N12
20N120
16N60C2
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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