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    60V N-CHANNEL ENHANCEMENT MODE MOSFET - ESD PROTECTED Search Results

    60V N-CHANNEL ENHANCEMENT MODE MOSFET - ESD PROTECTED Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    60V N-CHANNEL ENHANCEMENT MODE MOSFET - ESD PROTECTED Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet motor dc 48v

    Abstract: AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496
    Text: RF1K49154 S E M I C O N D U C T O R 2A, 60V, ESD Rated, Avalanche Rated, Dual N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 2A, 60V The RF1K49154 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This


    Original     		PDF RF1K49154 RF1K49154 52e-2 27e-4) 55e-3 03e-3 64e-6) 20e-3 67e-6) mosfet motor dc 48v AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K4915496

    CMPDM7002AE

    Abstract: PB CMPDM7002AE 2N7002 60V SOT-23
    Text: Product Brief CMPDM7002AE 60V, 300mA N-Channel MOSFET in SOT-23 package SOT-23 Typical Electrical Characteristics Central Semiconductor’s CMPDM7002AE is a special ESD protected version of the 2N7002 enhancement-mode N-channel MOSFET designed for high speed pulsed amplifier and driver


    Original     		PDF CMPDM7002AE 300mA OT-23 CMPDM7002AE 2N7002 OT-23 350mW com/info/CMPDM7002AE 21x9x9 27x9x17 PB CMPDM7002AE 2N7002 60V SOT-23

    AN8610

    Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET KAPPA RELAY HIP0061 HIP0061AS1 HIP0061AS2 MO-169AC relay spice model
    Text: HIP0061 60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array December 1997 Features Description • Three 3.5A Power MOS N-Channel Transistors The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transistors connected in a common source configuration. The


    Original     		PDF HIP0061 HIP0061 100mJ AN8610 N-CHANNEL ENHANCEMENT MODE POWER MOSFET KAPPA RELAY HIP0061AS1 HIP0061AS2 MO-169AC relay spice model

    KAPPA RELAY

    Abstract: AN8610 HIP0061 HIP0061AS1 HIP0061AS2 6v ls1 relay
    Text: HIP0061 TM 60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array December 1997 Features Description • Three 3.5A Power MOS N-Channel Transistors The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transistors connected in a common source configuration. The


    Original     		PDF HIP0061 HIP0061 100mJ KAPPA RELAY AN8610 HIP0061AS1 HIP0061AS2 6v ls1 relay

    f3055l

    Abstract: FP3055LE f3055 Fp3055 RFD3055LESM9A RFP3055 RFD3055LESM AN7254 RFD3055LE RFP3055LE
    Text: LOGIC LEVEL POWER MOSFET DATA SHEETS RFD3055LE, RFD3055LESM, RFP3055LE S E M I C O N D U C T O R 12A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 12A, 60V SOURCE DRAIN


    Original     		PDF RFD3055LE, RFD3055LESM, RFP3055LE O-220AB O-251AA RFP3055LE 1e-30 06e-3 f3055l FP3055LE f3055 Fp3055 RFD3055LESM9A RFP3055 RFD3055LESM AN7254 RFD3055LE

    6v ls1 relay

    Abstract: No abstract text available
    Text: HIP0061 S E M I C O N D U C T O R 60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array December 1997 Features Description • Three 3.5A Power MOS N-Channel Transistors The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transistors connected in a common source configuration. The


    Original     		PDF HIP0061 HIP0061 1-800-4-HARRIS 6v ls1 relay

    6v ls1 relay

    Abstract: AN8610 HIP0061 HIP0061AS1 HIP0061AS2 MO-169AC mosfet array vgs 5v 2A BSC 75N AN-8610
    Text: HIP0061 S E M I C O N D U C T O R 60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array June 1997 Features Description • Three 3.5A Power MOS N-Channel Transistors The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transistors connected in a common source configuration. The


    Original     		PDF HIP0061 HIP0061 100mJ HIP0061ights 1-800-4-HARRIS 6v ls1 relay AN8610 HIP0061AS1 HIP0061AS2 MO-169AC mosfet array vgs 5v 2A BSC 75N AN-8610

    Untitled

    Abstract: No abstract text available
    Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)


    Original     		PDF 2N7002KDW OT-363 500mA 200mA 2002/95/EC IEC61249 2010-REV RB500V-40 2N7002KDW

    K2765

    Abstract: No abstract text available
    Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)


    Original     		PDF 2N7002KDW 500mA 200mA 2002/95/EC IEC61249 OT-363 OT-363 2010-REV RB500V-40 K2765

    sot-363 n-channel mosfet

    Abstract: K27 SOT-363 MARKING K2765 SOT 363 marking CODE LA 2N7002K k27 sot-363
    Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)


    Original     		PDF 2N7002KDW 500mA 200mA 2002/95/EC IEC61249 OT-363 OT-363 2010-REV RB500V-40 sot-363 n-channel mosfet K27 SOT-363 MARKING K2765 SOT 363 marking CODE LA 2N7002K k27 sot-363

    Untitled

    Abstract: No abstract text available
    Text: 2N7002KTB 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , [email protected],IDS@200mA=4 0.0 44(1.10) 0.0 35(0.90) 0.067(1.70) 0.059(1.50) 0.013(0.33) 0.009(0.23) • RDS(ON), VGS@10V,IDS@500mA=3 • Advanced Trench Process Technology


    Original     		PDF 2N7002KTB 200mA 2002/95/EC IEC61249 500mA OT-523 2012-REV

    Untitled

    Abstract: No abstract text available
    Text: 2N7002KTB 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , [email protected],IDS@200mA=4 • Advanced Trench Process Technology 0.0 44(1.10) 0.0 35(0.90) 0.067(1.70) 0.059(1.50) 0.013(0.33) 0.009(0.23) • RDS(ON), VGS@10V,IDS@500mA=3


    Original     		PDF 2N7002KTB 200mA 500mA 2002/95/EC 2012-REV

    Untitled

    Abstract: No abstract text available
    Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)


    Original     		PDF 2N7002KDW 500mA 200mA OT-363 OT-363 MIL-STD-750 2010-REV

    Untitled

    Abstract: No abstract text available
    Text: 2N7002KTB 60V N-Channel Enhancement Mode MOSFET - ESD Protected 0.044 1.10 0.035(0.90) 0.067(1.70) 0.059(1.50) 0.013(0.33) • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω 0.009(0.23) SOT-523 FEATURES • Advanced Trench Process Technology


    Original     		PDF 2N7002KTB 500mA 200mA OT-523 2002/95/EC OT-523 2010-REV

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K 60V ESD Protected N-Channel Enhancement Mode MOSFET RDS ON , VGS@10V, IDS@500mA=2Ω RDS(ON), [email protected], IDS@200mA=3Ω SOT-23 FEATURES • • • • • • Advanced Trench Process Technology Ultra Low On Resistance : 2Ω Fast Switching Speed : 20ns


    Original     		PDF 2N7002K 500mA 200mA OT-23 2002/95/EC OT-23 MIL-STD-750, 200mA

    2n7002kdW

    Abstract: No abstract text available
    Text: 2N7002KDW 60V ESD Protected N-Channel Enhancement Mode MOSFET RDS ON , VGS@10V, IDS@500mA=2Ω RDS(ON), [email protected], IDS@200mA=3Ω SOT-363 FEATURES • • • • • • Advanced Trench Process Technology Ultra Low On Resistance : 2Ω Fast Switching Speed : 20ns


    Original     		PDF 2N7002KDW 500mA 200mA OT-363 2002/95/EC OT-363 MIL-STD-750, 200mA 2n7002kdW

    k72 diode

    Abstract: 2N7002KW K723
    Text: 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition


    Original     		PDF 2N7002KW 500mA 200mA 2002/95/EC OT-323 MIL-STD-750 k72 diode 2N7002KW K723

    k72 wn

    Abstract: k72 diode 2N7002KW
    Text: 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition


    Original     		PDF 2N7002KW 500mA 200mA 2002/95/EC OT-323 MIL-STD-750 2010-REV k72 wn k72 diode 2N7002KW

    K72 marking diode

    Abstract: No abstract text available
    Text: 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition


    Original     		PDF 2N7002KW 500mA 200mA 2002/95/EC OT-323 MIL-STD-750 2010-REV K72 marking diode

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES 0.120 3.04 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance 0.006(0.15)MIN. • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω


    Original     		PDF 2N7002K 500mA 2002/95/EC OT-23 MIL-STD-750 2010-REV OT-23

    K27 mOSFET

    Abstract: MARKING K27 2N7002KDW LA sot363 2N7002KD k27 sot-363 60V N-Channel Enhancement Mode MOSFET - ESD Protected
    Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 • RDS ON , VGS@10V,IDS@500mA=3Ω Unit: inch (mm) 0.054(1.35) 0.045(1.15) • High Density Cell Design For Ultra Low On-Resistance 0.030(0.75) 0.021(0.55) 0.087(2.20) 0.074(1.90) • Advanced Trench Process Technology


    Original     		PDF 2N7002KDW OT-363 500mA 200mA OT-363 2010-REV K27 mOSFET MARKING K27 2N7002KDW LA sot363 2N7002KD k27 sot-363 60V N-Channel Enhancement Mode MOSFET - ESD Protected

    2N7002K

    Abstract: No abstract text available
    Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition


    Original     		PDF 2N7002K 500mA 200mA 2002/95/EC OT-23 MIL-STD-750 2N7002K

    p30N06LE

    Abstract: P30N06 RFP30N06LE MOSFET P30N06L 107E3 p30n0
    Text: m HARRIS RFP30N06LE S E M I C O N D U C T O R 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFET MegaFET January 1994 Package Features TO-220AB • 30A.60V TOP VIEW • r DS(ON) - 0.047£2 • 2KV ESD Protected DRAIN


    OCR Scan     		PDF RFP30N06LE O-220AB RFP30N06LE 07e-3 03e-7) 38e-3 64e-5) 75e-3 90e-6) p30N06LE P30N06 RFP30N06LE MOSFET P30N06L 107E3 p30n0

    Untitled

    Abstract: No abstract text available
    Text: HIP0061 S e m iconductor 60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array December 1997 Features Description • Three 3.5A Power MOS N-Channel Transistors The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transis­


    OCR Scan     		PDF HIP0061 HIP0061 100mJ 5M-1982.