Untitled
Abstract: No abstract text available
Text: ECX-6166-13.500M TR RoHS Pb PLEASE NOTE: Due to the inherent proprietary nature of custom part numbers, certain parameters are intentionally excluded from this specification sheet. ECX-6166 -13.500M TR Series Ecliptek Custom Crystal Packaging Options Tape & Reel
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ECX-6166-13
ECX-6166
500MHz
MIL-STD-883,
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: ECX-6166-13.500M RoHS Pb PLEASE NOTE: Due to the inherent proprietary nature of custom part numbers, certain parameters are intentionally excluded from this specification sheet. ECX-6166 -13.500M Series Ecliptek Custom Crystal Nominal Frequency 13.500MHz ELECTRICAL SPECIFICATIONS
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ECX-6166-13
ECX-6166
500MHz
MIL-STD-883,
MIL-STD-202,
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picstart plus
Abstract: MCP2510 PIC17CXXX PIC18CXXX KEELOQ SOURCE CODE C
Text: CMX-MicroNet for dsPIC30F Summary CMX-Micronet is an embedded TCP/IP stack that is specifically designed for optimized use of Flash and RAM resources on Microchip's 16-bit Digital Signal Controller. The software runs directly on the processor with no gateways or PCs required. The stack can be run in standalone mode or work in conjunction with an RTOS. Using only
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dsPIC30F
16-bit
DS51447A
DS51447A*
picstart plus
MCP2510
PIC17CXXX
PIC18CXXX
KEELOQ SOURCE CODE C
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PIC16C82X
Abstract: PIC16C820 microchip garage door opener PIC16C821 PIC16C822 200B PIC16CXX
Text: PIC16C82X EPROM/EEPROM 8-Bit Microcontroller Product Brief Pin Diagram Devices included: • PIC16C820 • PIC16C821 • PIC16C822 PDIP, SOIC, Windowed CERDIP Device EPROM Program EEPROM Data RAM Data PIC16C820 512 64 80 PIC16C821 1K 64 80 PIC16C822 2K 64
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PIC16C82X
PIC16C820
PIC16C821
PIC16C822
PIC16CXX
14-bit
DS30553A-page
PIC16C82X
PIC16C820
microchip garage door opener
PIC16C821
PIC16C822
200B
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200B
Abstract: PIC16C72A RG41
Text: PIC16C72A 8-Bit CMOS Microcontrollers with A/D Converter Product Brief Features: Peripheral Features: EPROMProgram RAM Data I/O A/D Channel PWM 2K x 14 128 x 8 22 5 Yes High-performance RISC CPU: 1998 Microchip Technology Inc. Pin Diagrams SDIP, SOIC, SSOP
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PIC16C72A
DS30285A-page
200B
PIC16C72A
RG41
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23K256
Abstract: 8631 23A256 23K640 256 kbyte Low Power Serial SRAM 6166 ram pic with spi
Text: Serial SRAM Memory Serial SRAM Memory Family www.microchip.com/SRAM Serial SRAM Memory Do you need more RAM in your application? Does it need to be small, cheap, fast and low power? Are you completing a design and need just a little more volatile memory? Do you need a simple, inexpensive way to add RAM without
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R60-4-227-8870
DS22127A
DS22127A*
23K256
8631
23A256
23K640
256 kbyte Low Power Serial SRAM
6166 ram
pic with spi
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2048X14
Abstract: No abstract text available
Text: PIC16CR72 28-Pin 8-Bit ROM-Based Microcontroller Product Brief Pin Diagram Features: ROM Program RAM Data I/O 2K x 14 128 x 8 22 A/D Channel PWM 5 Yes ✯ PDIP, SOIC SSOP • Only 35 single word instructions to learn • All single cycle instructions 200 ns except for
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PIC16CR72
28-Pin
DS30428A-page
2048X14
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PIC16C432
Abstract: 200B DK-2750 RG41 linbus
Text: PIC16C432 OTP 8-Bit CMOS MCU with LIN-BUS Transceiver Devices included in this Product Brief: Pin Diagram • PIC16C432 CERDIP, TSSOP High Performance RISC CPU: Device Program Memory RAM Data Memory PIC16C432 2048 x 14 128 x 8 • • • • Interrupt capability
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PIC16C432
DS41137B-page
PIC16C432
200B
DK-2750
RG41
linbus
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200B
Abstract: PIC16CR72
Text: 30428A.FRM Page 1 Thursday, December 12, 1996 4:25 PM PIC16CR72 28-Pin 8-Bit ROM-Based Microcontroller Product Brief Pin Diagram Features: ROM Program RAM Data I/O 2048 128 22 A/D Channel PWM 5 Yes ✯ PDIP, SOIC SSOP • Only 35 single word instructions to learn
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0428A
PIC16CR72
28-Pin
DS30428A-page
200B
PIC16CR72
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2114 Ram pinout 18
Abstract: MWS5114 MWS5114-3 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X MWS5114E1 MWS5114E2 MWS5114E2X
Text: MWS5114 S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS CMOS technology. It is designed for use in
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MWS5114
1024-Word
MWS5114
MWS5114-2
MWS5114-1
MWS5114-3
2114 Ram pinout 18
MWS5114-3
MWS5114D1
MWS5114D2
MWS5114D3
MWS5114D3X
MWS5114E1
MWS5114E2
MWS5114E2X
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RM 621A
Abstract: PIE1
Text: PIC16C62X A Errata Sheet of PIC16C62X(A) Rev. B Silicon The PIC16C62XA parts you have received conform functionally to the intended design (refer to the PIC16C62XA Preliminary Data Sheet, DS30235F). In the PIC16C62X Data Sheet, the common RAM differences between the PIC16C62X and the PIC16C62XA
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PIC16C62X
PIC16C62XA
DS30235F)
70h-7Fh
RM 621A
PIE1
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Untitled
Abstract: No abstract text available
Text: MWS5114 Semiconductor 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The M W S5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate com ple mentary MOS CMOS technology. It is designed for use in
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OCR Scan
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MWS5114
1024-Word
S5114
S5114-2
MWS5114-1
S5114-3
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memory ic 2114
Abstract: 5114E
Text: MWS5114 HARRIS S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The M W S5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate com ple mentary MOS CMOS technology. It is designed for use in
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OCR Scan
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MWS5114
1024-Word
S5114
S5114-3
S5114-2
S5114-1
memory ic 2114
5114E
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2114 Ram pinout 18
Abstract: 9114 RAM 2114 static ram 2114 static ram ic ic 2114 MWS5114E3 9114 static ram MWS5114-3 2114 4 bit Ram pinout 2114 ram
Text: MWS5114 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS CMOS technology. It is designed for use in
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MWS5114
1024-Word
MWS5114
2114 Ram pinout 18
9114 RAM
2114 static ram
2114 static ram ic
ic 2114
MWS5114E3
9114 static ram
MWS5114-3
2114 4 bit Ram pinout
2114 ram
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dspic 4013
Abstract: 4013 internal circuit DC10 DC11 DSPIC30F3014
Text: dsPIC30F3014/4013 dsPIC30F3014/4013 Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications (Table 23-4 on page 166) has changed from 1.5V
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dsPIC30F3014/4013
dsPIC30F3014/4013
DS70138E)
DS80356A-page
dspic 4013
4013 internal circuit
DC10
DC11
DSPIC30F3014
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dsPIC30F2011
Abstract: DC10 DC11
Text: dsPIC30F2011/2012/3012/3013 dsPIC30F2011/2012/3012/3013 Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications
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dsPIC30F2011/2012/3012/3013
dsPIC30F2011/2012/3012/3013
DS70139E)
dsPIC30F2011/2012/3012/
DS80354A-page
dsPIC30F2011
DC10
DC11
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Untitled
Abstract: No abstract text available
Text: SC46166 300mA ,500KHZ HIGH EFFICIENCY STEP-UP DC/DC CONVERTER DESCRIPTION The SC46166 is a compact, high efficiency, and low voltage step-up DC/DC converter, includes an error amplifier, ramp generator, current comparator, slope compensation, current sense
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SC46166
300mA
500KHZ
SC46166
OT-23-6
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DC10
Abstract: DC11 OS65B
Text: dsPIC30F2010 dsPIC30F2010 Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications (Table 22-4 on page 148) has changed from 1.5V
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dsPIC30F2010
dsPIC30F2010
DS70118G)
DS80353A-page
DC10
DC11
OS65B
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DC10
Abstract: DC11
Text: dsPIC30F3010/3011 dsPIC30F3010/3011 Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications (Table 23-4 on page 162) has changed from 1.5V
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dsPIC30F3010/3011
dsPIC30F3010/3011
DS70141D)
DS80355A-page
DC10
DC11
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DC10
Abstract: DC11 6014A
Text: dsPIC30F6011A/6012A/6013A/6014A dsPIC30F6011A/6012A/6013A/6014A Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications
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dsPIC30F6011A/6012A/6013A/6014A
dsPIC30F6011A/6012A/6013A/6014A
DS70143C)
dsPIC30F6011A/6012A/
013A/6014A
DS80360A-page
DC10
DC11
6014A
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DC10
Abstract: DC11 DS70149
Text: dsPIC30F5015/5016 dsPIC30F5015/5016 Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications (Table 24-5 on page 175) has changed from 1.5V
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dsPIC30F5015/5016
dsPIC30F5015/5016
DS70149C)
DS80358A-page
DC10
DC11
DS70149
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DC10
Abstract: DC11 dsPIC30F5011
Text: dsPIC30F5011/5013 dsPIC30F5011/5013 Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications (Table 24-4 on page 168) has changed from 1.5V
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dsPIC30F5011/5013
dsPIC30F5011/5013
DS70116F)
DS80357A-page
DC10
DC11
dsPIC30F5011
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DS70135E
Abstract: DC10 DC11 dsPIC30F4011 4012
Text: dsPIC30F4011/4012 dsPIC30F4011/4012 Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications (Table 24-4 on page 172) has changed from 1.5V
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dsPIC30F4011/4012
dsPIC30F4011/4012
DS70135E)
DS80361A-page
DS70135E
DC10
DC11
dsPIC30F4011
4012
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TC7660
Abstract: 200B DK-2750 IDT6116 PIC16C62A TC7109
Text: AN796 TC7109 Records Remote Data Automatically Author: Wes Freeman, Microchip Technology, Inc. INTRODUCTION A Microchip Technology analog-to-digital converter, a 2K-byte CMOS static RAM, and some gates and counters can be combined to form a low-cost, flexible, standalone data logging
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AN796
TC7109
13-bit
12-bit
D-81739
DS00796A*
DS00796A-page
TC7660
200B
DK-2750
IDT6116
PIC16C62A
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