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    616V1 Price and Stock

    NetSol Co Ltd S3R1616V1M-XI70T

    MRAM MEMORY IC 16MBIT PPI 3.3V 7
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    DigiKey S3R1616V1M-XI70T Digi-Reel 1,000 1
    • 1 $16.59
    • 10 $14.731
    • 100 $13.0732
    • 1000 $12.02186
    • 10000 $12.02186
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    S3R1616V1M-XI70T Cut Tape 1,000 1
    • 1 $16.59
    • 10 $14.731
    • 100 $13.0732
    • 1000 $12.02186
    • 10000 $12.02186
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    S3R1616V1M-XI70T Reel 1,000 1,000
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    • 1000 $11.20278
    • 10000 $11.20278
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    AW Coil AWCDMC-1616V-10

    CMC 10mH 2.0A 2LN TH, FLAT wire
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    DigiKey AWCDMC-1616V-10 Tray 1
    • 1 $3
    • 10 $3
    • 100 $3
    • 1000 $2.25
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    Samtec Inc EBCF-1-6-16-V-1-26-V-1

    EXAMAX 2.00 MM HIGH-SPEED BACKPL
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    DigiKey EBCF-1-6-16-V-1-26-V-1 Bulk
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    Samtec Inc EBCF-1-6-16-V-1-40-V-1

    EXAMAX 2.00 MM HIGH-SPEED BACKPL
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    Samtec Inc EBCF-3-6-16-V-1-08-V-1

    EXAMAX 2.00 MM HIGH-SPEED BACKPL
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    DigiKey EBCF-3-6-16-V-1-08-V-1 Bulk
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    616V1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ATPA

    Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C


    Original
    PDF CY2147-35C CY7C147-35C CY7C147-45C CY91L22-35C CY7C122-35C CY2147-45C CY7C148-35C CY7C148-25C+ ATPA 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c

    EPM5128LC

    Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C


    Original
    PDF CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY7C148-35C CY7C168A-45M CY7C168A-35M+ EPM5128LC IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309

    EPM5128LC

    Abstract: EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1 5962-8867812rx
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 5962-8753903LX 5962-8753902LX CY21L49-55C CY21L49-45C CY7C281 CY7C281A 5962-8863701LX 5962-8753902LX CY6116A-45C CY6116A-35C CY7C286 CY27H512 5962-8867003LX 5962-8867002LX CY6116A-55C CY6116A-45C


    Original
    PDF 5962-8753903LX 5962-8863701LX 5962-8867003LX 5962-8867809RX 5962-8867809XX 5962-8867810RX 5962-8867811RX 5962-8867812RX 5962-8871309RX 5962-8871310RX EPM5128LC EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1

    1002BI

    Abstract: KM616
    Text: P relim inary CMOS SRAM KM 616V1002B/BL, KM 616V1002BI BLI D o cu m e n t Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Com m ercial and Industrial Tem perature Range. R evision H istory Draft Data R em ark Rev No.


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    PDF KM616V1002B/BL, KM616V1002BI 64Kx16 1002BI KM616

    Untitled

    Abstract: No abstract text available
    Text: 616V1000B, KM616U1000B Family CMOS SRAM 64K x16 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCTOPTION • • • • The KM 616V1000B and KM616U1 OOOB fam ily is febricated by SAM SUNG'S advanced CM OS process technology. The fam ily


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    PDF KM616V1000B, KM616U1000B KM616V1OOOB 616U1000B 44-TSQ P2-400F/R 616V1000B KM616U1 KM61SV1000B KM616U10008

    Untitled

    Abstract: No abstract text available
    Text: P re 'ir'irc í-y KM 616V1002B/BL, 616V1002BI/BLI CMOS SRAM 64K x 16 Bit High-Speed CMOS Static RAM 3 ,3V Operating FEATURES GENERAL DESCRIPTION Fast Access Time 8,10,12* • (Max.) . Low Power Dissipation Standby (TTL) : 30« • (Max.) The 616V1002B/BL is a 1,048,576-bit high-speed Static


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    PDF KM616V1002B/BL, KM616V1002BI/BLI KM616V1002B/BL KM616V1002B/BL-12 I/O16 KM616V1002B/BLJ 44-SOJ-400 KM616V1002B/BLT: 44-TSOP2-400F

    Untitled

    Abstract: No abstract text available
    Text: 616V1002C/CL, 616V1002CI/CLI PRELIMINARY CMOS SRAM Document Tills 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev.No. History Rev. 0.0 Initial Draft Draft Data Aug. 5. 1998


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    PDF KM616V1002C/CL, KM616V1002CI/CLI 64Kx16 KM616V1002 44-TSOP2-400F

    Untitled

    Abstract: No abstract text available
    Text: 616V1002C/CL, 616V1002CI/CLI CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev.No. History Rev. 0.0 Initial Draft Aug. 5. 1998 Prelim inary Rev. 1.0


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    PDF KM616V1002C/CL, KM616V1002CI/CLI 64Kx16 48-fine

    Untitled

    Abstract: No abstract text available
    Text: 616V1002B/BL, 616V1002BI/BLI CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target.


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    PDF KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 8/10/12ns 200/190/180mA 200/195/190mA 44-SOJ-400

    256x16* STATIC RAM

    Abstract: 256x16 soj 3.3v 256x16 sram KM616V1002A 44-TSOP
    Text: Advanced information 616V1002A CM O S SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 1 2 ,1 5 ,1 7 , 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.)


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    PDF KM616V1002A WORDx16 KM616V1002A-12 110mA KM616V1002A-15 100mA KM616V1002A-17 KM616V1002A-20 KM616V1002AJ 44-SOJ-400 256x16* STATIC RAM 256x16 soj 3.3v 256x16 sram KM616V1002A 44-TSOP

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 KM41C4000C-7 KM41C4000C-8 KM41C4000C-5


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    PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000

    km616u1000b

    Abstract: No abstract text available
    Text: 616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The 616V1000B and KM616U1000B family are • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16


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    PDF KM616V1000B, KM616U1000B 64Kx16 64Kx16 KM616V1000B 44-TSOP

    KM616V1002A

    Abstract: tba 231
    Text: 616V1002A CMOS SRAM 6 4Kx16Bi t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) O perating 616V1002A-12 : 200 mA(Max.)


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    PDF KM616V1002A KM616V1002A-12 KM616V1002A-15: KM616V1002A-17 KM616V1002A-20 KM616V1002AJ 44-SOJ-4CIO KM616V1002AT 44-TSOP2-400F KM616V1002A tba 231

    Untitled

    Abstract: No abstract text available
    Text: 616V1000B, KM616U1000B Family CMOS SRAM Document Tills 64K x16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target July 24, 1995 Advance 0.1 Initial draft August 12, 1995 Prelim inary 1.0


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    PDF KM616V1000B, KM616U1000B 100ns 616V1000B 1000B

    KM616V4002A

    Abstract: 6161002 ER255 KM732V589
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Guide. 11 2. Ordering Inform ation. 15


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    PDF KM62256C 128Kx KM68512A KM681000B KM681000C2 KM718B90 KM718BV87AT KM732V588 KM732V589/L. KM716V689 KM616V4002A 6161002 ER255 KM732V589

    Untitled

    Abstract: No abstract text available
    Text: 616V1002A/AL, 616V1002AI/ALI CMOS SRAM Document Title 64Kx16 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.


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    PDF KM616V1002A/AL, KM616V1002AI/ALI 64Kx16 12/15/17/20ns 200/190/180/170mA 170/165/165/160mA June-1997

    DD312

    Abstract: ics 0741 D0312
    Text: 616V1002A/AL E l C iv CMOS SRAM ELECTRONICS 6 4 K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns( Max. ) • Low Power Dissipation Standby (TTL) : 20m A(M ax.) (CMOS): 5m A(M ax.) 0.5 mA(Max.) ; L-veronly


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    PDF KM616V1002A/AL KM616V1002A/AL-12 KM616V1002A/AL-15: KM616V1002A/AL-17 KM616V1002A/AL-20 I/016 KM616V1002AJ/ALJ 44-S002 44-TSOP2-400F DD312 ics 0741 D0312

    100PF

    Abstract: 0213T
    Text: Preliminary CMOS SRAM K M 6 1 6 V 1 OOOBL / L-L 64Kx16 B it Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70, 100 ns max. The 616V1000BL/L-L is a 1,048,576-bit high speed • Low Power Dissipation Static Random Access Memory organized as 65,536


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    PDF KM616V1OOOBL 64Kx16 180nW 54jiW 216mW I/01-I/08 KM616V1000BLT/LT-L: 400mil KM616V1000BLR/LR-L: 100PF 0213T

    KM616U1000BL-L

    Abstract: No abstract text available
    Text: MEMORY ICs FUNCTION GUIDE 1. Low Power SRAM 5V Operation Den. 256K Org. 32K X 8 Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 ’ C 4 5/55/70 KM62256CLE -2 5 -8 5 =C KM62256CLI KM62256CLI-L -4 0 -8 5 °C 1M 64K X 8 KM68512CL KM68512CL-L 0 -7 0 ‘ C KM68512CLI


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    PDF KM62256CL KM62256CL-L KM62256CLE KM62256CLE-L KM62256CLI KM62256CLI-L 28-TSOP 28-DIP 28-SOP KM68512CL KM616U1000BL-L

    Untitled

    Abstract: No abstract text available
    Text: 616V1000B, KM616U1000B Family CMOS SRAM Document Title 64K x16 bit Low Power and Low Voltage CMOS Static RAM Revision History History Draft Data Remark 0.0 Design target July 24, 1995 Advance 0.1 Initial draft August 12, 1995 Preliminary 1.0 April 13, 1996


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    PDF KM616V1000B, KM616U1000B 100ns KM616V1000B KM616V1QQGB KM616U1QQQB

    KM616U1000B

    Abstract: KM616V1000B KM616V1000
    Text: 616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • Process Technology : 0.6 urn CMOS Organization : 64Kx16 Data Byte Control : /LB=I/01~8, /UB=I/09~16 Power Supply Voltage


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    PDF KM616V1000B, KM616U1000B 64Kx16 64Kx16 KM616V1000B 44-TSOP als-10 KM616V1000

    Untitled

    Abstract: No abstract text available
    Text: Rr€íir'in<!‘Y CMOS SRAM 616V1002B/BL, 616V1002BI/BLI 64K X 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION The 616V1002B/BL is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits.


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    PDF KM616V1002B/BL, KM616V1002BI/BLI KM616V1002B/BL 576-bit 400mil March-1997

    Untitled

    Abstract: No abstract text available
    Text: 616V1002B/BL, 616V1002BI/BLI CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target.


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    PDF KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 8/10/12ns 200/190/180mA 44-SOJ-400 44-TSOP2-400F

    Untitled

    Abstract: No abstract text available
    Text: 616V1002C/CL, 616V1002CI/CLI CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev.No. History Draft Data Remark Rev. 0.0 Initial Draft Aug. 5. 1998


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    PDF KM616V1002C/CL, KM616V1002CI/CLI 64Kx16 48-fine 616V1002CZ 616V1002CF