SUB610
Abstract: No abstract text available
Text: SUB610 Semiconductor Schottky Barrier Diode Features • • • • Small SMD package & 3chip array Low reverse current: IR=1 ㎂ Max. @ VR=30V Low power rectified High reliability Ordering Information Type No. Marking SUB610 61B Package Code SOT-363 Outline Dimensions
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SUB610
OT-363
KSD-D5S004-000
SUB610
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bcx71
Abstract: No abstract text available
Text: BCW61 BCX71 SMALL SIGNAL PNP TRANSISTORS Type Marking BCW 61A BA BCW 61B BB BCW 61C BC BCX71G BG BCX71H BH BCX71J BJ 2 3 • ■ ■ ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AF AMPLIFICATION AND
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BCW61
BCX71
BCX71G
BCX71H
BCX71J
BCW60
BCX70
OT-23
BCX71
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AX06
Abstract: U181 VR-61B T125U
Text: バリスタ 挿入品（THD） Varistor •外形寸法図 OUTLINE DIMENSIONS VR-61B A φ0.6 ±0.05 Package : AX06 ＋0.5 27.5 ±2 5 −0 φ2.6 ±0.1 27.5 ±2 ●捺印面展開図 61 98 単位：mm 外形図については新電元 Web サイト又は〈半導体製品一覧表〉をご参照
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VR-61B
Junctio25
T125unless
AX06Package
AX06
U181
T125U
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VR-61BA
Abstract: VR-61B
Text: バリスタ 挿入品（THD） Varistor •外形寸法図 OUTLINE DIMENSIONS VR-61B A φ0.6 ±0.05 Package : AX06 ＋0.5 27.5 ±2 5 −0 φ2.6 ±0.1 27.5 ±2 ●捺印面展開図 61 98 単位：mm 外形図については新電元 Web サイト又は〈半導体製品一覧表〉をご参照
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VR-61B
T125unless
VR-61BA
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Untitled
Abstract: No abstract text available
Text: BCW 61 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung 1.3 ±0.1 2.5 max 3 Type Code 2 1 250 mW Plastic case Kunststoffgehäuse
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OT-23
O-236)
UL94V-0
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VPS05178
Abstract: BCV61
Text: BCV 61 NPN Silicon Double Transistor 3 • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain 4 • Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking
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VPS05178
EHA00012
OT-143
EHN00002
Sep-30-1999
EHP00940
EHP00942
VPS05178
BCV61
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Untitled
Abstract: No abstract text available
Text: BCW 61 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung 1.3 ±0.1 2.5 max 3 Type Code 2 1 250 mW Plastic case Kunststoffgehäuse
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Original
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OT-23
O-236)
UL94V-0
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PDF
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Untitled
Abstract: No abstract text available
Text: SUB610 SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature
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SUB610
OT-363
06-JAN-14
KSD-D5S004-002
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SUB610
Abstract: No abstract text available
Text: SUB610 SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature
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SUB610
OT-363
25-AUG-10
KSD-D5S004-001
SUB610
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Untitled
Abstract: No abstract text available
Text: SUB610 SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature
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SUB610
OT-363
25-AUG-10
KSD-D5S004-001
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g1 TRANSISTOR SMD MARKING CODE
Abstract: marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 BF998 g1 7 TRANSISTOR SMD MARKING CODE
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1996 Aug 01 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs
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BF998;
BF998R
BF998R
MAM039
BF998
g1 TRANSISTOR SMD MARKING CODE
marking code ff SMD Transistor
TRANSISTOR SMD MARKING CODE BS t
marking code ff p SMD Transistor
smd marking mop
NF marking TRANSISTOR SMD c4
marking TRANSISTOR SMD nf c1
marking TRANSISTOR SMD nf c4
g1 7 TRANSISTOR SMD MARKING CODE
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c639
Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
c33840
transistor C639
c33725
c877
C63716
marking code 67a sot23 6
c878
c33740
F423
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC
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OT-23
BCW61A
BCW61B
BCW61C
BCW61D
BCW61A
BCW61C
C-120
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BCW61A
Abstract: BCW61B BCW61C BCW61D BCw6
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC
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OT-23
BCW61A
BCW61B
BCW61C
BCW61D
BCW61A
BCW61C
C-120
BCW61B
BCW61D
BCw6
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MARKING 68W SOT-23
Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06
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25-04W
25-05W
25-06W
25-07W
3904S
846AT
846BW
846BT
847AT
847BW
MARKING 68W SOT-23
marking code 67a sot23 6
sot143 Marking code 5B
baw 92
SOT-363 marking CF
54 fk SOT-23
BAT 545
SOT-363 marking BF
sot-89 MARKING CODE BN
MARKING CODE DH SOT 23
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BCW65C
Abstract: FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P BCV71 BCV72 BCW29 BCW30 BCW31 BCW32
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW 29 BCW 30 BCW31 BCW 32 BCW 33 BCW 60A BCW 60B BCW 60C BCW 60D B CW 61A BCW 61B BCW 61C B CW 61D B CW 65A
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OCR Scan
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OT-23
BCV71
BFQ31
BCV72
BFQ31A
BCW29
BFS20
BCW30
BCW31
BCW32
BCW65C
FERRANTI ELECTRONICS
transistors DEVICE MARKING
BF197P
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PDF
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LC marking code transistor
Abstract: transistor marking code BCW61A BCW61 BCW61B BCW61C BCW61D TRANSISTOR BCW61 marking code ER transistor
Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation
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OCR Scan
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BCW61A/B/C/D
KS5086
OT-23
BCW61B
BCW61C
BCW61
-50mA,
-10mA,
LC marking code transistor
transistor marking code
BCW61A
BCW61D
TRANSISTOR BCW61
marking code ER transistor
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F1K marking
Abstract: No abstract text available
Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature
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OCR Scan
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BCW61A/B/C/D
KS5086
BCW61
F1K marking
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PDF
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Untitled
Abstract: No abstract text available
Text: BCW61A BCW61B BCW61C BCW61D IL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD PACKAGE OUTLIN E DETAILS A LL DIM EN SION S IN mm 3.0 2.8 0.14 0.48 0.38 3 2.6 2A Pin configuration 1 = BASE
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OCR Scan
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BCW61A
BCW61B
BCW61C
BCW61D
BCW61A
BCW61C
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PDF
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61B20
Abstract: No abstract text available
Text: BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN nun 0.1 + Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS
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OCR Scan
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BCW61A
BCW61B
BCW61C
BCW61D
BCW61A
BCW61B
BCW61C
61B20
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PDF
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KST3906 samsung
Abstract: BCW71 AG LC-1010
Text: SAMSUNG ELECTRONICS INC bOE D • TTbMlME 0011523 TTO HSriGK TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Condition Device and Polarity Marking NPN KST06(1G) KST05(1H) KSC1623(C1X) PNP
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OCR Scan
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OT-23
KST06
KST05
KSC1623
BCW71
BCX70G
BCX70H
BCX70J
BCX70K
BCX71G
KST3906 samsung
BCW71 AG
LC-1010
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PDF
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Untitled
Abstract: No abstract text available
Text: CDIL BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD PA CKA G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m 3.0 2.8 0.14 0.48 I 0.38 t1 3 I 2.4 1I Pin configuration
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OCR Scan
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BCW61A
BCW61B
BCW61C
BCW61D
BCW61A
BCW61C
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PDF
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ferranti
Abstract: FMMT-A20 FMMT2222A BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20
Text: FERRANTI semiconductors FMMT-A20 NPN S ilico n Planar Small Signal Transistor D E S C R IP T IO N These devices ere intended for sm all and m edium signal am plification applications from d.c. to radio frequencies. Encapsulated in the popular S O T -23 package these devices
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OCR Scan
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FMMT-A20
OT-23
FMMT5087
BCW69
BCW70
BCX71G
BCX71H
BCX71J
BCX71K
ferranti
FMMT-A20
FMMT2222A
BCV72
BCW29
BCW30
BCW31
BFQ31
BFQ31A
BFS20
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PDF
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TRANSISTOR A70
Abstract: marking A70 SOT 213 BCV72 BCW29 BCW30 BFQ31 BFQ31A BFS20 FMMT-A70
Text: 4 FERRANTI semiconductors F M M T -A 70 PNP S ilicon Planar Sm all Signal T ransistor D E S C R IP T IO N T h is device is intended for sm all and m e diu m sign a l a m plification a p p lica tio n s from d.c. to radio frequencies. E ncapsu late d in the p opu lar SO T-23 p a c k a g e the device is
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OCR Scan
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FMMT-A70
OT-23
FMMT5087
BCW69
BCW70
BCX71G
BCX71H
BCX71J
TRANSISTOR A70
marking A70
SOT 213
BCV72
BCW29
BCW30
BFQ31
BFQ31A
BFS20
FMMT-A70
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