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Broadcom Limited HCPL-061N-500E OPTOISO 3.75KV OPN COLLECTOR 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HCPL-061N-500E	Digi-Reel	8,302		1	1 $4.11 10 $2.799 100 $4.11 1000 $1.85866 10000 $1.85866	Buy Now
	HCPL-061N-500E	Cut Tape	8,302		1	1 $4.11 10 $2.799 100 $4.11 1000 $1.85866 10000 $1.85866	Buy Now
	HCPL-061N-500E	Reel	7,500		1,500	1 - 10 - 100 - 1000 - 10000 $1.73588	Buy Now
Avnet Americas	HCPL-061N-500E	Reel		14 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $1.3494	Buy Now
Mouser Electronics	HCPL-061N-500E		10,709			1 $4.1 10 $2.8 100 $2.13 1000 $1.86 10000 $1.63	Buy Now
Newark	HCPL-061N-500E	Cut Tape	2,451		1	1 $4.09 10 $2.89 100 $2.37 1000 $2 10000 $2	Buy Now
	HCPL-061N-500E	Reel			1,500	1 - 10 - 100 - 1000 - 10000 $1.74	Buy Now
Chip-Germany GmbH	HCPL-061N-500E		54			1 - 10 - 100 - 1000 - 10000 -	Get Quote

EBV Elektronik	HCPL-061N-500E		696,000	16 Weeks	1,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	HCPL-061N-500E		30,000			1 - 10 - 100 $1.678 1000 $1.4074 10000 $1.4074	Buy Now
Broadcom Limited HCPL-061N-500 OPTOISO 3.75KV OPN COLLECTOR 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HCPL-061N-500	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $2.34052	Buy Now
Avnet Americas	HCPL-061N-500	Reel		14 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $1.92995	Buy Now
Broadcom Limited HCPL-261N-500E OPTOISO 3.75KV OPEN COLL 8DIP GW
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HCPL-261N-500E	Cut Tape			1	1 $3.83 10 $3.83 100 $3.83 1000 $3.83 10000 $3.83	Buy Now
	HCPL-261N-500E	Digi-Reel			1	1 $3.83 10 $3.83 100 $3.83 1000 $3.83 10000 $3.83	Buy Now
	HCPL-261N-500E	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $1.50003	Buy Now
Avnet Americas	HCPL-261N-500E	Reel		14 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $1.2342	Buy Now
Mouser Electronics	HCPL-261N-500E					1 - 10 - 100 - 1000 $1.53 10000 $1.46	Get Quote
EBV Elektronik	HCPL-261N-500E			16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
PEPPERL+FUCHS GmbH RVI58N-044K1R61N-50000 INCREMENTAL ROTARY ENCODER(NON-S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RVI58N-044K1R61N-50000	Box			1	1 $644.98 10 $644.98 100 $644.98 1000 $644.98 10000 $644.98	Buy Now
Newark	RVI58N-044K1R61N-50000	Bulk			1	1 $779.09 10 $728 100 $634.34 1000 $634.34 10000 $634.34	Buy Now
PEPPERL+FUCHS GmbH RHI58N-2AAK2R61N-50000 INCREMENTAL ROTARY ENCODER(NON-S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RHI58N-2AAK2R61N-50000	Box			1	1 $910.47 10 $910.47 100 $910.47 1000 $910.47 10000 $910.47	Buy Now
Newark	RHI58N-2AAK2R61N-50000	Bulk			1	1 $1063.09 10 $944.97 100 $926.32 1000 $926.32 10000 $926.32	Buy Now

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61N50 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
61N50 Abstract: No abstract text available Text: VDSS High Current Power MOSFET IXTN 58N50 IXTN 61N50 ID25 RDS on 58 A 85 mΩ Ω Ω 61 A 75 mΩ 500 V 500 V N-Channel Enhancement Mode Preliminary Data Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 500 V V DGR TJ = 25°C to 150°C; RGS = 1.0 MΩ	Original	PDF	58N50 61N50 OT-227 E153432 61N50
61N50 Abstract: 58N50 D-68623 92810G Text: IXFN 58N50 IXFN 61N50 Preliminary Data Sheet VDSS IXFN 58N50 500V IXFN 61N50 500V High Current Power MOSFET N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 500 V V GS Continuous ±20	Original	PDF	58N50 61N50 58N50 61N50 OT-227 D-68623 92810G
CRT - TCL COLOUR TV SCHEMATIC DIAGRAM Abstract: MATSUA compressor catalogue Riyadh Cables Catalogue PD 18N50 equivalent MATSUSHITA compressor catalogue CRT TCL COLOUR TV SCHEMATIC DIAGRAM Anritsu ML524B operation manual ML2430 CRT - tcl 29" COLOUR TV SCHEMATIC DIAGRAM Anritsu MG442A Text: CONTENTS Outline of Anritsu Corporation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 How to Use This Catalog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Sales, Shipping, and Service Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	PDF
TEST20 Abstract: No abstract text available Text: □ IXYS vDSS High Current Power MOSFET IXTN 58N50 IXTN 61N50 500 V 500 V p ^D25 DS on 58 A 85 m fì 61 A 75 m fì N-Channel Enhancement Mode Preliminary Data os Symbol TestC onditions v DSS Tj = 2 5 °C to 150°C vDGR T, = 25°C to 150°C; £ s= 1.0 M il	OCR Scan	PDF	58N50 61N50 OT-227 E153432 61N50 TEST20
pixy Abstract: No abstract text available Text: PiXYS a«i»«iawawiWBt»i High Current Power MOSFET . - V DSS IXTN 58N50 IXTN 61N50 500 V 500 V lg! F js n g g ìg R ^D25 DS on 58 A 85 mQ 61 A 75 m il N-Channel Enhancement Mode Symbol Test Conditions Voss v D0B Tj = 25°C to 150°C 500 V Tj = 25°C to 150°C; Rss= 1.0 M£2	OCR Scan	PDF	58N50 61N50 61N50 OT-227 E153432 C2-53 pixy
1xys Abstract: No abstract text available Text: □IXYS IXFN 58N50 IXFN 61N50 Preliminary Data Sheet V DSS IXFN 58N50 500V IXFN 61N50 500V High Current Power MOSFET p ^D25 DS on 58A 61A 85 m£2 75 mû N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS T j = 25°C to 150°C 500 V v DGR	OCR Scan	PDF	58N50 61N50 58N50 61N50 150eC, 1xys
Untitled Abstract: No abstract text available Text: PIX Y S 1 vDSS High Current Power MOSFET IXTN 58N50 IXTN 61N50 500 V 500 V □ ^D25 DS on 58 A 85 mQ 61 A 75 m ß N-Channel Enhancement Mode Preliminary Data Symbol Test Conditions Maximum Ratings v* DSS T0 = 25°Cto150°C 500 V v DCR Tj = 25°C to 150°C; RGS= 1.0 MQ	OCR Scan	PDF	58N50 61N50 Cto150Â OT-227 E153432
mosfet 4400 Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,	OCR Scan	PDF	100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
75N1 Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH	OCR Scan	PDF	76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B
40n80 Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18	OCR Scan	PDF	5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
MFL-75 Abstract: 4835 mosfet mfl sot Text: HiPerFET Power MOSFET IXFN 58N50 IXFN 61 N50 Test Conditions Maximum Ratings VOSS Tj = 25°C to 150°C 500 V Voon ^ 500 V Vos v GSM Continuous ±20 V Transient ±30 V 58 61 232 244 A A A A 61 A = 25°C to 150°C; Rgs= 1.0 MQ Tc = 25°C 'OM Tc = 25°C 1	OCR Scan	PDF	IXFN58N50 IXFN61N50 58N50 61N50 OT-227 l53432 MFL-75 4835 mosfet mfl sot
ixys ixfn 55n50 Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60 Text: i , i - •.• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ \| Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01	OCR Scan	PDF	O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
mosfet 4800 Abstract: ixfn27n80 150N10 IXFN44N50 RD5A Co701 4800 power mosfet IXFN36n60 ixfm40n30 ixfm35n30 Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode T jm = 150°C >- New V DSS max. V P ' d 25 Tc = 25°C A DS(on) Tc = 25°C Q typ. C rss typ. max. ° 9 typ. PF pF rts nC C iss p thJC PD max. K/W W 7 >- IXFN 200N06 60 200 0.0055	OCR Scan	PDF	200N06 200N07 150N10 100N20 106N20 73N30 44N50 48N50 58N50 61N50 mosfet 4800 ixfn27n80 150N10 IXFN44N50 RD5A Co701 4800 power mosfet IXFN36n60 ixfm40n30 ixfm35n30
11n80 Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80 Text: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088	OCR Scan	PDF	O-247 O-251 O-204 O-264 15N60 20N60 15N70 01N80* 35N30 40N30 11n80 ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80

mm036 Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100 Text: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA	OCR Scan	PDF	DSAI35-12A 5-16A 5-18A 5-12A 2-06A 12-1OA 2-12A 2x30-Q4C mm036 ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100

61N50 Search Results

61N50 Price and Stock

Broadcom Limited HCPL-061N-500E

Broadcom Limited HCPL-061N-500

Broadcom Limited HCPL-261N-500E

PEPPERL+FUCHS GmbH RVI58N-044K1R61N-50000

PEPPERL+FUCHS GmbH RHI58N-2AAK2R61N-50000

61N50 Datasheets Context Search

61N50

61N50

CRT - TCL COLOUR TV SCHEMATIC DIAGRAM

TEST20

pixy

1xys

Untitled

mosfet 4400

75N1

40n80

MFL-75

ixys ixfn 55n50

mosfet 4800

11n80

mm036