BD 130 NPN transistor
Abstract: transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330
Text: 25C D • 623SbOS 000434b 4 « S I E G _ NPN Silicon Planar Transistor BD 329 -SIEMENS AKTIENGESELLSCHAF 25C 043^6 O-.7 ^ SI - 0 7 BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly
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00043Mb
Q62702-D394
329/BD
Q62702-D401
Q62902-B63
100ps
200jiS
BD329
BD 130 NPN transistor
transistor BD 329
transistor BD
Q62702-D401
BD329
JH transistor
Q62702-D394
Q62902-B63
QQQ4347
BD330
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siemens sab 82532
Abstract: 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525
Text: SIEM ENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each
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CRC-32
235b05
82532N-10.
00702fl2
siemens sab 82532
82258
SA 82532
SAB 80286
csc 2323
sab80286
STT 3 SIEMENS
80286 microprocessor pin out diagram
ESCC2
siemens sab 82525
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Q67006-A9171
Abstract: hall current sensor 3A 4921-3U AEP01694 TLE4921-3U siemens magnetic sensors Siemens Hall AEA01259 AED01707 AED01709
Text: SIEM ENS Dynamic Differential Hall Effect Sensor 1C TLE4921-3U Bipolar IC Features • • • • • • • • • • • • • • • Advanced performance High sensitivity Symmetrical thresholds High piezo resistivity Reduced power consumption South and north pole pre-induction possible
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TLE4921-3U
4921-3U
Q67006-A9171
23SbQS
23Sb0S
4921-3U
hall current sensor 3A
AEP01694
TLE4921-3U
siemens magnetic sensors
Siemens Hall
AEA01259
AED01707
AED01709
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BUZ54
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistors BUZ 54 • N channel • Enhancement mode • Avalanche-rated VOTOSI 52 Type v DS ^DS on Package 1> Ordering Code BUZ 54 1000 V 5.1 A 2.0 £2 TO-204 AA C67078-S1010-A2 BUZ 54 A 1000 V 4.5 A 2.6 Q TO-204 AA C67078-S1010-A3
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O-204
C67078-S1010-A2
C67078-S1010-A3
BUZ54
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Untitled
Abstract: No abstract text available
Text: SIEMENS TUA 601 OX preliminary IC-SPECIFICATION TV Mixer-Oscillator-PLL for 1.1 GHz page Contents 1 Functional Description, Application 2 3-4 Pin Defintion and Function 5 Block Diagram Circuit Description 6-10 Pinning, Package 11 Absolute Maximum Ratings 12
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S879-B200-V1
fl23SbD5
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Untitled
Abstract: No abstract text available
Text: SIEMENS 6fach-Silizium-Fotodiodenarray 6-Chip Silicon Photodiode Array KOM 2033 A KOM 2033 AF Maße in mm, w enn nicht anders a ngegeben/D im ensions in mm. unless otherw ise specified W esentliche M erkm ale Features • Speziell geeignet für Anwendungen im
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0235bGS
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Untitled
Abstract: No abstract text available
Text: SIEM EN S SAB-C501 8-Bit C M O S M icroco n tro ller • Fully compatible to standard 8051 microcontroller • Versions for 12/20/40 MHz operating frequency • 8 K x 8 ROM SAB-C501 -1R only • 256 x 8 RAM • Four 8-bit ports • Three 16-bit Timers / Counters (Timer 2
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SAB-C501
SAB-C501
16-bit
P-DIP-40
P-LCC-44
SAF-C501
SAB-C501-L/C501
80C32/C52
80C52
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SIEMENS BST h 05 90
Abstract: 51214X SIEMENS BST N 35 SIEMENS BST g 02 60
Text: SIEMENS Bl Dl Transceiver Optical Module 1300/1300 nm, Medium Power SBM 51214X • • • • • • Designed for application in passive-optical networks Integrated beam splitter Bidirectional Transmission in one optical window Laser diode with Multi-Quantum Well structure
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51214X
1214A
51214G
Q62702-Pxxxx
0073b7M
023SbDS
G073b75
SIEMENS BST h 05 90
51214X
SIEMENS BST N 35
SIEMENS BST g 02 60
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STT 3 SIEMENS 431
Abstract: 80c517 Siemens sab 2793b-p
Text: bOE D • fl2 3 5 fc iO S G G H 7T23 S IE M E N S SIEMENS 152 « S IE G A K T IE N G E S E L L S C H A F ^ High-Performance 8-Bit CMOS Single-Chip Microcontroller ^ e=r - / 9 - o 7 SAB 80C517/80C537 Advanced Information SAB 80C517 SAB 80C537 Microcontroller with factory mask-programmable ROM
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80C517
80C537
80C517/80C537
32-bit
16-bit
80C515
023SbOS
80C517/83C537
P-LCC-84
STT 3 SIEMENS 431
Siemens sab 2793b-p
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222-1
Abstract: AF2N br 2222 npn 2222 A 2221 N 2222 2N2222 2221A A4075 a2222a
Text: 2SC D • 023SbQS Q0Q4ÖÖÖ 7 « S I E G NPN Silicon Planar Transistors - -SIEMENS AKTIENGESELLSCH AF. . 2 N 2221 A 2 N 2222 A - 2 N 2221 A, and 2 N 2222 A are epitaxial NPN silicon planar transistors in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors are
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023SbQS
Q62702-F414
-S122
fl23SbQ5
222-1
AF2N
br 2222 npn
2222 A
2221
N 2222
2N2222
2221A
A4075
a2222a
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Untitled
Abstract: No abstract text available
Text: SIEMENS ¿ ¿ ¿ ¿ : ^íííííííííííííííííííííííííí^íííííííííííííííííííííííí^íí: ^ ^ ^ ^ ^ ^ ^ ^ ^ íí? íí? ? í? ? ííí:á íííí? íí? í^ ííf í^ : íííííííííííííííííííííííííííííííííííííííí^^ííííífííííííí:
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G10404Ã
C509-L
A8-A15
A535bDS
235bD5
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STT 3 SIEMENS
Abstract: BU426A BU426 D-07 Q68000-A5164 Q68000-A5165
Text: 25C » • ä235bGS 0004047 4 « S I E G !' T- J 3 -/J BU 426 BU 426 A NPN Silicon Power Transistors - SIEMENS AKTIEN6ESELLSCHAF BU 426 and BU 426 A are triple diffused silicon power switching transistors in SOT 93 case TOP 3 . They are outstanding for short switching times and high dielectric strength
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6235bGS
Q68000-A5164
Q68000-A5165
BU426
STT 3 SIEMENS
BU426A
D-07
Q68000-A5164
Q68000-A5165
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POWER SUPPLY BTS SIEMENS
Abstract: siemens pwm 12v BTS630 E3230 sis 630 application note BTS SMD MARKING code 613
Text: SIEMENS BTS 630 PWM Power Unit The device allows continuous power control for lamps,LEDs or inductive loads. • Highside switch • Overtemperatur protection • Short circuit / overload protection through pulse widt reduction and overload shutdown • Load dump protection
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T0220/7
E3128
B23SbDS
fl23SbDS
POWER SUPPLY BTS SIEMENS
siemens pwm 12v
BTS630
E3230
sis 630
application note BTS
SMD MARKING code 613
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DDMS770
Abstract: PC1210 SiEMENS EC 350 98 0
Text: bGE ]> • Ô235b05 00457ti5 T3S M S I E C SIEMENS SIEMENS AKTI ENGESELLSCHAF ■7- 2 3 - Ö SI MOPAC Module VDS / d 7 BSM 294 F = 1000 V = 2 x 18 A R DS on = 0.63 £2 • • • • • • • Power module Half-bridge FREDFET N channel Enhancement mode
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023SbOS
C67076-A1151-A2
fl23SbÃ
S1M00189
DDMS770
PC1210
SiEMENS EC 350 98 0
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K4887-K4
Abstract: B25355-K167-K4 ws dvd 290
Text: MP DC Capacitors Smoothing, Supporting, Discharge B 25 355 High peak-current capability Wide capacitance and voltage range Construction • Self-healing • Paper dielectric • Oil and hard-wax impregnated tubular windings no PCB • Metal-sprayed face ends ensure reliable contacting
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KLK0875â
KLK1270-C
B25355-F6405-K1
fi235bQ5
K4887-K4
B25355-K167-K4
ws dvd 290
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Untitled
Abstract: No abstract text available
Text: SIEMENS TUA 6110XS preliminary IC-SPECIFICATION Contents SAT Mixer-Oscillator-PLL for 3.3GHz paf>e Contents 1 Functional Description, Application Pin Defintion and Function Block Diagram 5 Circuit Description 6-10 Pinning, Package 11 Absolute Maximum Ratings
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6110XS
S879-A100-V1
6235bOS
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5117400BJ -50/-60/-70 HYB 5117400BT -50/-60/-70 Advanced Inform ation • • • • 4 194 304 w ords by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns -50 version
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5117400BJ
5117400BT
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SMD MARKING CODE E2H
Abstract: SMD MARKING CODE E4H marking code C1H SMD Q67120-C991 SAB-C501-L24N Siemens SAB-C501 siemens sm2 c947 smd marking b4h C501
Text: SIEMENS 8-Bit CMOS Microcontroller C501 Preliminary • • • • • • • • • • • Fully compatible to standard 8051 microcontroller Versions for 12/24/40 MHz operating frequency 8 K x 8 ROM C501 -1R only 256 x 8 RAM Four 8-bit ports Three 16-bit Timers / Counters (Timer 2 with Up/Down Counter feature)
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16-bit
P-DIP-40,
P-LCC-44
P-MQFP-44
SAB-C501
SAF-C501
256x8
C501-1R
MCA01762
C501-L/C501-1R
SMD MARKING CODE E2H
SMD MARKING CODE E4H
marking code C1H SMD
Q67120-C991
SAB-C501-L24N
Siemens SAB-C501
siemens sm2
c947
smd marking b4h
C501
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NTC 4,7 Siemens
Abstract: HT 1200-4 S041E Q7101-H6615 siemens slic DBM01 qsicos-program S-041 S041 E siemens 58 295 84 pin chip
Text: S IE M E N S Four Channel Codec Filter SICOFP-4 PEB 2465 Preliminary Data 1.1 CMOS Features or PABX-channels Specification according to rele\ LSSGR recommendations Digital signal processing technique Programmable interface optimizf SLICs and transform er solutions
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P-MQFP-64
fl23SbOS
P-MQFP-64
-BIDI64X
235b05
007flb05
NTC 4,7 Siemens
HT 1200-4
S041E
Q7101-H6615
siemens slic
DBM01
qsicos-program
S-041
S041 E
siemens 58 295 84 pin chip
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BRY 300
Abstract: BRY 100 BRY 55 200 BRY 55 A HS 817 VDR Siemens BRy55 siemens thyristors bry65 BRY 21
Text: 2SC D • flSBSbQS QQQ47bR T ■ S I E 6 r . 1 C3L U t lO T a -fZ _ . 2 o -// Silicon Miniature Thyristors ~ BRY 55/30. - S I E M E N S A K T IE N G E S E L L S C H A F _BRY SS/3_00 These diffused silicon thyristors in TO 92 plastic package 10 A 3 DIN 41868} are
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QQQ47bR
Q68000-A114-F10
Q68000-A183-F10
Q68000-A184-F10
Q68000-A520-F10
Q68000-A185-F10
50to400H2
126iC
623SbOS
BRY 300
BRY 100
BRY 55 200
BRY 55 A
HS 817
VDR Siemens
BRy55
siemens thyristors
bry65
BRY 21
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HDSP7301
Abstract: HDSP-7301 7 segment led display SIEMENS Siebensegmentanzeige
Text: SI EM EN S 4?E m fl23SbD5 0027011 4 «SIEG SIEMENS AKTIENGESELLSCHAF "P-41-33 Sieben-Segment-Anzeige Seven Segment Display 7,6 mm 0.3” HDSP-7301 Besondere Merkmale • Hohe Lichtstärke • Gehäuse ist optimiert fur den Einsatz bei starkem Fremdlicht
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fl23SbD5
P-41-33
HDSP-7301
235b05
623SbOS
HDSP7301
HDSP-7301
7 segment led display SIEMENS
Siebensegmentanzeige
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Untitled
Abstract: No abstract text available
Text: 25C D • S 3-/3 6235bOS 0004047 4 « S I E G !' BU 426 BU 426 A NPN Silicon Power Transistors - SIEMENS AKTIENGESELLSCHAF BU 426 and BU 426 A are triple diffused silicon power switching transistors in SOT 93 case TOP 3 . They are outstanding for short switching times and high dielectric strength
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6235bOS
Q68000-A5164
Q68000-A5165
curre25
BU426
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AF239
Abstract: transistor h5c AF 239 0406H F239 Q60106-X239 A23Sb05 WTV4 AAO-4A
Text: ESC D • ÔEBSbQS QQOMQbb R PNP Germanium RF Transistor ISIEû 25C 04066 0 AF 239 r-3 t- ¿>7 SIEMENS AKTIENGESELLSCHAF - for UHF input stages up to 900 MHz AF 239 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.
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A23Sb05
AF239
Q60106-X239
T1-0221)
transistor h5c
AF 239
0406H
F239
Q60106-X239
WTV4
AAO-4A
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Untitled
Abstract: No abstract text available
Text: Metallized Polypropylene Film Capacitors MKP in Plastic Case B 32 652 . B 32 656 MKP wound capacitors Very small dimensions Construction -c: • Dielectric: polypropylene • Wound capacitor technology with internal series connection for l/R >1250 Vdc
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KMK0200-U
6335b05
630Vdc/250V
Vdc/250
A235bD5
DD7H67T
Vdc/700
623SbOS
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