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    62703F Search Results

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    62703F Price and Stock

    Bourns Inc CAT16-2703F4LF

    RES ARRAY 4 RES 270K OHM 1206
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    DigiKey CAT16-2703F4LF Reel 5,000
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    Avnet Americas CAT16-2703F4LF Reel 12 Weeks 5,000
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    Mouser Electronics CAT16-2703F4LF
    • 1 $0.1
    • 10 $0.054
    • 100 $0.039
    • 1000 $0.03
    • 10000 $0.021
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    Newark CAT16-2703F4LF Reel 5,000
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    RS CAT16-2703F4LF Bulk 15 Weeks 5,000
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    Avnet Abacus CAT16-2703F4LF Reel 15 Weeks 5,000
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    Master Electronics CAT16-2703F4LF
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    Kamaya Inc RMC1-16-2703FTP

    RES 270K OHM 1% 1/10W 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RMC1-16-2703FTP Reel 5,000
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    Kamaya Inc RMC1/16-2703FTP

    Thick Film Resistors - SMD 0603 270K 1% Lead Free
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RMC1/16-2703FTP
    • 1 $0.1
    • 10 $0.015
    • 100 $0.005
    • 1000 $0.002
    • 10000 $0.001
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    62703F Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BFT65

    Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
    Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions


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    62703-F

    Abstract: No abstract text available
    Text: TOSHIBA TD62703P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62703P, 62703F 6CH HIGH VOLTAGE SOURCE DRIVER The TD62703P, 62703F is comprised of six source current Transistor Array. These drivers are specifically designed for fluorescent


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    TD62703P/F TD62703P, TD62703F TD62703F DIP-14 OP-14 TD62703P 62703F DIP14-P-F 62703-F PDF

    62703-F

    Abstract: CFY30 GaAs FET cfy 19 siemens gaas fet
    Text: fl2 3 b3 2ü BSE D GaAs FET SIEMENS/ 0G1734Ô 2 « S I P SPCLi SEMICONDS CFY30 T " '3 1 • • • • • • • Low noise Fm n = 1.4 dB at 4 GHz) High gain (11.5 dB typ. at 4 GHz) For oscillators up to 12 GHz For amplifiers up to 6 GHz Ion-implanted planar structure


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    0G1734Ô CFY30 62703-F OT-143 fl23b32Q GG173S7 T--31--25 CFY30 GaAs FET cfy 19 siemens gaas fet PDF