Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    6299MO Search Results

    6299MO Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity, wide ASO. · Low collector-to-emitter saturation voltage.


    Original
    ENN3093 2SA1707/2SC4487 2SA1707/2SC4487] 2SA1707 PDF

    2SA1707

    Abstract: No abstract text available
    Text: Ordering number:EN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity, wide ASO. · Low collector-to-emitter saturation voltage.


    Original
    EN3093 2SA1707/2SC4487 2SA1707/2SC4487] 2SA1707 2SA1707 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN3093A 2SA1707/2SC4487 Bipolar Transistor http://onsemi.com - 50V, (-)3A, Low VCE(sat), (PNP)NPN Single NMP Features • • Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage • • Large current capacity, wide ASO


    Original
    EN3093A 2SA1707/2SC4487 2SA1707 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1707 / 2SC4487 Ordering number : EN3093A SANYO Semiconductors DATA SHEET 2SA1707 / 2SC4487 PNP/NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Features • • Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage


    Original
    2SA1707 2SC4487 EN3093A 2SA1707 PDF

    2044B

    Abstract: 2SA1732
    Text: Ordering number:EN3136 PNP Epitaxial Planar Silicon Transistor 2SA1732 High-Speed Switching Applications Features • Adoption of FBET processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions


    Original
    EN3136 2SA1732 2045B 2SA1732] 2044B 2044B 2SA1732 PDF

    2SA1707

    Abstract: 2SC4487 ITR04304 ITR04305 ENN3093
    Text: Ordering number:ENN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity, wide ASO. · Low collector-to-emitter saturation voltage.


    Original
    ENN3093 2SA1707/2SC4487 2SA1707/2SC4487] 2SA1707 2SA1707 2SC4487 ITR04304 ITR04305 ENN3093 PDF

    "Marking 121"

    Abstract: 2SA1502 FC121
    Text: Ordering number:EN3190 FC121 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features Package Dimensions • On-chip bias resistances (R1=2.2kΩ, R2=10kΩ). · Composite type with 2 transistors contained in the


    Original
    EN3190 FC121 FC121 2SA1502, FC121] "Marking 121" 2SA1502 PDF

    2SA1732

    Abstract: 2044B ITR04435
    Text: Ordering number:ENN3136 PNP Epitaxial Planar Silicon Transistor 2SA1732 High-Speed Switching Applications Package Dimensions • Adoption of FBET processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching.


    Original
    ENN3136 2SA1732 2045B 2SA1732] 2044B 2SA1732 2044B ITR04435 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN3190 FC121 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features Package Dimensions • On-chip bias resistances (R1=2.2kΩ, R2=10kΩ). · Composite type with 2 transistors contained in the


    Original
    EN3190 FC121 FC121 2SA1502, FC121] PDF

    2044B

    Abstract: 2SA1732 ITR04435
    Text: Ordering number:ENN3136 PNP Epitaxial Planar Silicon Transistor 2SA1732 High-Speed Switching Applications Package Dimensions • Adoption of FBET processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching.


    Original
    ENN3136 2SA1732 2045B 2SA1732] 2044B 2044B 2SA1732 ITR04435 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity, wide ASO. · Low collector-to-emitter saturation voltage.


    Original
    ENN3093 2SA1707/2SC4487 2SA1707/2SC4487] 2SA1707 PDF

    IC TA 31101

    Abstract: pa 2030a equivalent pa 2030a FC102 ts 3110 TRANSISTOR 2SC4211 C-03 DDD744S 08/bup 3110 transistor
    Text: SANYO SEMICONDUCTOR CORP 55E D 7 EH707fci Q D 0 7 M 4 D Q T - Z 7 -Ö 7 FC102 # NPN Epitaxial Planar Silicon Com posite Transistor 2067 Low-Frequency General-Purpose Amp, Differential Amp Applications 3110 F eatu res •Composite type with 2 transistors contained in the CP package currently in use, im proving the


    OCR Scan
    00Q7M40 FC102 FC102 2SC4211, IC TA 31101 pa 2030a equivalent pa 2030a ts 3110 TRANSISTOR 2SC4211 C-03 DDD744S 08/bup 3110 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEM ICO ND UC TOR CORP 22E D 7*n707fa 00073=12 4 FC121 T - 37-/3 PNP Epitaxial Planar Silicon Com posite Transistor 2066 Switching Applications with Bias Resistances R1=2.2kO, R2=10k0 3190 Features • On-chip bias resistances (Ri=2.2kQ,R2=lOkfl)


    OCR Scan
    n707fa FC121 FC121 2SA1502, 100pA 6299MO 00Q73T3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 3 0 9 3 _2SA1707/2SC4487 No.3093 PNP/NPN Epitaxial Planar Silicon Transistors S A iY O i High-Current Switching Applications Features • Adoption of FBET, MBIT processes • Large current capacity, wide ASO • Low collector-to-emitter saturation voltage


    OCR Scan
    2SA1707/2SC4487 2SA1707 6299MO 1707/2SC4487 PDF

    pa 2030a

    Abstract: 25CC 2SA1622 FC103 2018Al IC 7443
    Text: SANYO SEMICONDUCTOR CORP 7^ 7 0 7 1 3 22E » 0QG7443 h T~ 21 'Oc{ FC103 PNP Epitaxial Planar Silicon Com posite Transistor 2066 Low-Frequency General-Purpose Amp, Differential Amp Applications 3111 F e a tu re s • Com posite type w ith 2 tran sisto rs contained in the CP package c u rre n tly in use, im p ro v in g th e


    OCR Scan
    FC103 2SA1622, pa 2030a 25CC 2SA1622 2018Al IC 7443 PDF

    2sa1502

    Abstract: No abstract text available
    Text: Ordering n u m b e r:EN 3190 F C 12 1 PNP Epitaxial P lanar Silicon Composite Transistor Switching Applications with Bias Resistance F eatu re s • On-chip bias resistances (Ri —2.2kQ,R2 = lOkft) • Composite type with 2 transistors contained in the CP package currently in use, im proving the


    OCR Scan
    FC121 2SA1502, 2sa1502 PDF

    2044B

    Abstract: 2SA1732
    Text: Ordering number: EN 3 1 3 6 2 S A 1 73 2 No.3136 PN P E pitaxial P la n ar Silicon T ransistor High-Speed Switching Applications F e a tu re s - Adoption of FBET, MBIT processes • Large cu rren t capacity •Low collector-to-em itter saturation voltage ■F ast switching speed


    OCR Scan
    PDF

    m4871

    Abstract: 2SA1707 2SA17C 2SC448 5A170 CBO 40V CEO 25V EBO 5V transistors 2SA 2SA707
    Text: Ordering num ber: EN 3093 2SA1707/2SC4487 No.3093 i SANYO PNP/NPN Epitaxial Planar Silicon Transistors i High-Current Switching Applications F eatu res • Adoption of FBET, MBIT processes - Large current capacity, wide ASO • Low collector-to-emitter saturation voltage


    OCR Scan
    2SA1707/2SC4487 2SA1707 m4871 2SA17C 2SC448 5A170 CBO 40V CEO 25V EBO 5V transistors 2SA 2SA707 PDF

    SANYO SS 1001

    Abstract: FC101 FC101 cp6 MA 2067
    Text: SANYO SEMICONDUCTOR CORP ESE D T'HTGTb Q007437 Q T 'Z 7 ~ 0 9 f c io i PNP E pitaxial P lanar S ilic o n C o m p o s ite T ra n s is to r 2067 Low-Frequency General-Purpose Amp, Differential Amp Applications 3109 F e a tu re s - Composite type w ith 2 tran sisto rs contained in the CP package cu rre n tly in use, im proving th e


    OCR Scan
    FC101 2SA1622, SANYO SS 1001 FC101 cp6 MA 2067 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering num beriE N 3136 2SA1732 No.3136 SA W O PN P E p itax ial P la n a r Silicon T ra n sisto r I High-Speed Switching Applications Features • Adoption of FBET, MBIT processes •Large c u rre n t capacity • Low collector-to-em itter sa tu ra tio n voltage


    OCR Scan
    2SA1732 20uft 6299MO PDF

    Transistor A1707

    Abstract: A1707 2SA17 transistor 2sa1707 K 4005 transistor C4487 2SA1707 24487 TO-92 NPN CBO 40V CEO 25V EBO 5V 3a170
    Text: O rdering num ber: EN 3093 2SA1707/2SC4487 No.3093 SAXYO PNP/NPN Epitaxial Planar Silicon Transistors i High-Current Switching Applications Features • Adoption of FBET, MBIT processes • Large current capacity, wide ASO • Low collector-to-emitter saturation voltage


    OCR Scan
    2SA1707/2SC4487 2SA1707 2034/2034A SC-43 7tlt17D7b Transistor A1707 A1707 2SA17 transistor 2sa1707 K 4005 transistor C4487 2SA1707 24487 TO-92 NPN CBO 40V CEO 25V EBO 5V 3a170 PDF