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    63 BALL FBGA THERMAL RESISTANCE MICRON Search Results

    63 BALL FBGA THERMAL RESISTANCE MICRON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650M-F-COVER Murata Manufacturing Co Ltd PQU650M Series - 3x5 Fan Cover Kit, RoHs Medical Visit Murata Manufacturing Co Ltd
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    63 BALL FBGA THERMAL RESISTANCE MICRON Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MT47H512M8

    Abstract: No abstract text available
    Text: 4Gb: x4, x8 TwinDie DDR2 SDRAM Functionality TwinDie DDR2 SDRAM MT47H1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks MT47H512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks For the latest component data sheets, refer to Micron’s Web site: www.micron.com Functionality Options


    Original     		MT47H1G4 MT47H512M8 63-ball Timi68-3900 09005aef8227ee4d/Source 09005aef822d103f MT47H1G MT47H512M8 PDF

    MT41K256M16

    Abstract: No abstract text available
    Text: 8Gb: x16 TwinDie DDR3L SDRAM Description TwinDie 1.35V DDR3L SDRAM MT41K512M16 – 32 Meg x 16 x 8 Banks Description Options Marking • Configuration – 32 Meg x 16 x 8 banks x 2 ranks • FBGA package Pb-free – 96-ball FBGA (10mm x 14mm x 1.2mm)


    Original     		MT41K512M16 96-ball 071ns DDR3L-1866) DDR3L-1600) DDR3L-1333) DDR3L-1066) 09005aef84ccb467 MT41K256M16 PDF

    MT41K512M16

    Abstract: 96 ball fbga thermal resistance micron MT41K256M16 DDR3L 63 ball fbga thermal resistance micron micron marking code information marking micron MT41K256M16 DDR3 impedance 1m x16 SDRAM MICRON
    Text: 8Gb: x16 TwinDie DDR3L SDRAM Description TwinDie 1.35V DDR3L SDRAM MT41K512M16 – 32 Meg x 16 x 8 Banks Description Options Marking • Configuration – 32 Meg x 16 x 8 banks x 2 ranks • FBGA package Pb-free – 96-ball FBGA (10mm x 14mm x 1.2mm)


    Original     		MT41K512M16 MT41K256M16 MT41K512M16. 96-ballw 09005aef84ccb467 MT41K512M16 96 ball fbga thermal resistance micron MT41K256M16 DDR3L 63 ball fbga thermal resistance micron micron marking code information marking micron MT41K256M16 DDR3 impedance 1m x16 SDRAM MICRON PDF

    MT41K512M16

    Abstract: MT41K256M16 96 ball fbga thermal resistance micron Theta JC of FBGA MICRON fBGA package code micron marking code information
    Text: Preliminary‡ 8Gb: x16 TwinDie DDR3L SDRAM Description TwinDie 1.35V DDR3L SDRAM MT41K512M16 – 32 Meg x 16 x 8 Banks Description Options Marking • Configuration – 32 Meg x 16 x 8 banks x 2 ranks • FBGA package Pb-free – 96-ball FBGA (10mm x 14mm x 1.2mm)


    Original     		MT41K512M16 MT41K256M16 MT41K512M16. SAC305 09005aef84ccb467 MT41K512M16 MT41K256M16 96 ball fbga thermal resistance micron Theta JC of FBGA MICRON fBGA package code micron marking code information PDF

    MT47H512M8

    Abstract: No abstract text available
    Text: 4Gb: x4, x8 TwinDie DDR2 SDRAM Features TwinDie DDR2 SDRAM MT47H1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks MT47H512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks Features Options • Configuration – 64 Meg x 4 x 8 banks x 2 ranks – 32 Meg x 8 x 8 banks x 2 ranks


    Original     		MT47H1G4 MT47H512M8 63-ball 09005aef8227ee4d mt47h1g MT47H512M8 PDF

    MT41K256M16

    Abstract: MT41K512M16 8Gb DDR3 SDRAM twindie ddr3 udqs DDR3 timing diagram
    Text: Preliminary‡ 8Gb: x16 TwinDie DDR3L SDRAM Description TwinDie 1.35V DDR3L SDRAM MT41K512M16 – 32 Meg x 16 x 8 Banks Description Options Marking • Configuration – 32 Meg x 16 x 8 banks x2 ranks • FBGA package Pb-free – 96-ball FBGA (10mm x 14mm x 1.2mm) Rev. E


    Original     		MT41K512M16 MT41K256M16 MT41K512M16. SAC305 09005aef84ccb467 MT41K256M16 MT41K512M16 8Gb DDR3 SDRAM twindie ddr3 udqs DDR3 timing diagram PDF

    63-ball

    Abstract: MT47H512M8 MT47H1G marking WMM MICRON 63 MT47H1G4 DDR2-533 DDR2-667 DDR2-800 SAC305
    Text: 4Gb: x4, x8 TwinDie DDR2 SDRAM Features TwinDie DDR2 SDRAM MT47H1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks MT47H512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks Features Options • Configuration – 64 Meg x 4 x 8 banks x 2 ranks – 32 Meg x 8 x 8 banks x 2 ranks


    Original     		MT47H1G4 MT47H512M8 63-ball DDR2-800) DDR2-667) DDR2-533) 09005aef8227ee4d mt47h1g MT47H512M8 marking WMM MICRON 63 MT47H1G4 DDR2-533 DDR2-667 DDR2-800 SAC305 PDF

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 18Mb ZBT SRAM MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • •


    Original     		Apr/6/00 Jan/18/00 119-pin Nov/11/99 MT55L1MY18P PDF

    MT47H512M8

    Abstract: 63-ball 68 ball fbga thermal resistance IDD3P 63 ball fbga thermal resistance micron DDR2 SDRAM Meg x 4 x 9 banks
    Text: 4Gb: x4, x8 TwinDie DDR2 SDRAM Features TwinDie DDR2 SDRAM MT47H1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks MT47H512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks Features Options • Configuration – 64 Meg x 4 x 8 banks x 2 ranks – 32 Meg x 8 x 8 banks x 2 ranks


    Original     		MT47H1G4 MT47H512M8 63-ball 09005aef8227ee4d mt47h1g MT47H512M8 68 ball fbga thermal resistance IDD3P 63 ball fbga thermal resistance micron DDR2 SDRAM Meg x 4 x 9 banks PDF

    Untitled

    Abstract: No abstract text available
    Text: 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 18Mb ZBT SRAM MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • • • • • •


    Original     		MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 100-Pin simplepr/6/00 Jan/18/00 119-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 18Mb ZBT SRAM MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • •


    Original     		Apr/6/00 Jan/18/00 119-pin Nov/11/99 MT55L1MY18P PDF

    GW 9n

    Abstract: MS-026 MT58L256L32F MT58L256L36F MT58L256V32F MT58L256V36F MT58L256V36FT-10 MT58L512L18F MT58L512V18F
    Text: 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM 8Mb SYNCBURST SRAM MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F 3.3V VDD, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply VDD


    Original     		MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F July/18/00 119-Pin 165-pin June/13/00 GW 9n MS-026 MT58L256L32F MT58L256L36F MT58L256V32F MT58L256V36F MT58L256V36FT-10 MT58L512L18F MT58L512V18F PDF

    U48B

    Abstract: DDR2 Mechanical Dimensions
    Text: 2 Gigabit Stacked DDR2 SDRAM DD52E 512Mb x 4 Features • Low Profile 63 Ball Two-High Stacked Die micropede BGA. • 8 x 11.5 x 1.35mm BGA Package • 50% Space Savings Over Two 60 Ball BGA Packages • Reduced Trace Lengths Over Two BGA Packages • Lead Free—High Temperature Solder Balls


    Original     		DD52E 512Mb 2D512M42U4BA DD52E U48B DDR2 Mechanical Dimensions PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 0.16µm Process 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 18Mb ZBT SRAM 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O FEATURES • • • • • •


    Original     		MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 100-Pin MT55L1MY18F PDF

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 18Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • •


    Original     		Apr/6/00 Jan/18/00 119-pin Nov/11/99 MT55L1MY18F PDF

    Untitled

    Abstract: No abstract text available
    Text: 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 18Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • • • • •


    Original     		MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 100-Pin Apr/6/00 Jan/18/00 119-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: 2 Gigabit Stacked DDR2 SDRAM DD53E 256Mb x 8 Features • Low Profile 63 Ball Two-High Stacked Die micropede BGA. • 8 x 11.5 x 1.35mm BGA Package • 50% Space Savings Over Two 60 Ball BGA Packages • Reduced Trace Lengths Over Two BGA Packages • Lead Free—High Temperature Solder Balls


    Original     		DD53E 256Mb 2D256M82U4BA DD53E PDF

    Untitled

    Abstract: No abstract text available
    Text: 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Double-Cycle Deselect FEATURES 100-Pin TQFP1


    Original     		MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 100-Pin 165Vor Apr/6/00 Jan/18/00 PDF

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect


    Original     		Apr/6/00 Jan/18/00 Nov/11/99 MT58L1MY18P MT58L1MY18P PDF

    U37Y

    Abstract: No abstract text available
    Text: 1 Gigabit Stacked DDR2 SDRAM 128Mb x 8 DD51E Features • Low Profile 63 Ball Two-High Stacked Die micropede BGA • 50% Space Savings Over Two 60 Ball BGA Packages • Significant Space Savings and Reduced Parasitics and • • • • • • • •


    Original     		DD51E 128Mb 2D128M82U3BA DD51E 3887x132 U37Y PDF

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 18Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • •


    Original     		Apr/6/00 Jan/18/00 119-pin Nov/11/99 MT55L1MY18F PDF

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect


    Original     		Apr/6/00 Jan/18/00 Nov/11/99 MT58L1MY18P MT58L1MY18P PDF

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Double-Cycle Deselect


    Original     		165Vor MT58L1MY18D, Apr/6/00 Jan/18/00 Nov/11/99 MT58L1MY18D PDF

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Double-Cycle Deselect


    Original     		165Vor MT58L1MY18D, Apr/6/00 Jan/18/00 Nov/11/99 MT58L1MY18D PDF