Untitled
Abstract: No abstract text available
Text: RFAM9011 RFAM90111:1 SMT Transformer 450MHz TO 500MHz LOW NOISE/HIGH LINEARITY PA CONNECTORIZED MODULE Module, 2 RF Connectors, 1 DC Pin, 3 GND Pins 61.47 mm x 55.12 mm x 13.46 mm Features 5VOperation, 630mA High Output P1dB>+31dBm Low Noise Figure<0.5dB
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RFAM9011
RFAM90111
450MHz
500MHz
630mA
31dBm
45dBm
RFAM9011
500MHz.
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PDF
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GDA-V
Abstract: S501 SB98107
Text: Bussmann 5 x 20mm Ferrule Fuses GDA GDA-V Fast Acting, High Breaking Capacity Dimensional Data Time-Current Characteristic Curves–Average Melt 50mA 63mA 80mA 100mA 125mA 160mA 200mA 250mA 315mA 400mA 500mA 630mA 800mA 1A 1.25A 1.6A 2A 2.5A 3.15A 4A 5A
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Original
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100mA
125mA
160mA
200mA
250mA
315mA
400mA
500mA
630mA
800mA
GDA-V
S501
SB98107
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series AQ1052N7S-T Features Item Summary 2.7nH(-0.3nH to +0.3nH), 630mA, 8, 0402 Lifecycle Stage Mass Production Standard packaging quantity (minimum)
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AQ1052N7S-T
630mA,
10000pcs
100MHz
175mm
630mA
820mA
6000MHz
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PDF
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DMN2004K
Abstract: DMN2004K-7
Text: DMN2004K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits RDS ON ID TA = 25°C 0.55Ω @ VGS = 4.5V 630mA 0.9Ω @ VGS = 1.8V 410mA V(BR)DSS • • • • • • • • • 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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DMN2004K
630mA
410mA
DS30938
DMN2004K
DMN2004K-7
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PDF
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Untitled
Abstract: No abstract text available
Text: DMN2004K Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) 20V 0.55Ω @ VGS = 4.5V 0.9Ω @ VGS = 1.8V ID TA = +25°C 630mA 410mA • Low On-Resistance: RDS(ON) = 550(max)mΩ @ VGS = 4.5V Low Gate Threshold Voltage
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Original
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DMN2004K
630mA
410mA
AEC-Q101
DS30938
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS SMD Power Inductors NR series NR6012T220ME Features Item Summary 22 H(±20%), 760mA, 630mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions -/6012
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Original
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NR6012T220ME
760mA,
630mA
1000pcs
100kHz
760mA
12MHz
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PDF
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lbhm
Abstract: No abstract text available
Text: LT3471 Dual 1.3A, 1.2MHz Boost/Inverter in 3mm x 3mm DFN DESCRIPTION FEATURES n n n n n n n n n n n 1.2MHz Switching Frequency Low VCESAT Switches: 330mV at 1.3A High Output Voltage: Up to 40V Wide Input Range: 2.4V to 16V Inverting Capability 5V at 630mA from 3.3V Input
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Original
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LT3471
330mV
630mA
320mA
200mA
10-Lead
LT3463/LT3463A
250mA
LT3464
3471fb
lbhm
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PDF
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Untitled
Abstract: No abstract text available
Text: DMN2004K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) 20V 0.55Ω @ VGS = 4.5V 0.9Ω @ VGS = 1.8V ID TA = +25°C 630mA 410mA Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching
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Original
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DMN2004K
630mA
410mA
DS30938
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PDF
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S506
Abstract: No abstract text available
Text: Bussmann 5 x 20mm IEC S506 Miniature Fuse Links 10A 8A 10mm + 2.0 4A 5A 6.3A 630mA 20mm + 0.5 1.25A 1.6A 2A 2.5A Time-Current Characteristics–Total Clear 800mA Dimensional Data AMPERE RATING 100 5.2mm +0.1 -0.2 Limits for Pre-arcing Time 1.5 In. 2.1 In.
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Original
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630mA
800mA
500mA
S506
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LBC2518T2R2M Features Item Summary 2.2 H(±20%), 630mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
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Original
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LBC2518T2R2M
630mA,
2000pcs
96MHz
630mA
68MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: DMN2004K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary RDS ON ID TA = 25°C 0.55Ω @ VGS = 4.5V 630mA 0.9Ω @ VGS = 1.8V 410mA V(BR)DSS • • • • • • • • • 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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DMN2004K
630mA
410mA
DS30938
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PDF
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E75865
Abstract: SB98107 MARK 4A
Text: 21.10mm .81 10mm 20mm ( 2.0) ( 0.5) 125mA 160mA 200mA 1.6A 5.54mm ( .20) 1.5A 2A 2.5A 3A 750mA 800mA Time-Current Characteristic Curves–Average Melt 1A 38.10mm ( .38) 300mA 400mA 500mA 630mA Dimensional Data AMPERE RATING 100 38.10mm ( .38) 5.2mm (+0.1/-0.2)
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125mA
160mA
200mA
750mA
800mA
300mA
400mA
500mA
630mA
125mA
E75865
SB98107
MARK 4A
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PDF
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18v transformer e115159
Abstract: Toroid International AB 230v to 18v transformer COPPER core type transformer en 61558
Text: Sida 1 3 Customer: Transf. No. Designed: ELFA AB 56-132-78 yellow AA-98022 1999-04-13 / ts green U = 18V Uo = 22,6V External fuse: S1 10 VA 630mA red 230V 48-60Hz P1 brown U = 18V 10 VA Uo = 22,6V External fuse: 630mA S2 blue yellow Classification Protection against electrical shock:
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AA-98022
630mA
48-60Hz
Ta40/E
73/23/EEG,
93/68/EEG
89/336/EEG,
92/31/EEG
18v transformer e115159
Toroid International AB
230v to 18v transformer
COPPER core type transformer
en 61558
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LBC2518T2R2M Features Item Summary 2.2 H(±20%), 630mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
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Original
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LBC2518T2R2M
630mA,
2000pcs
96MHz
630mA
68MHz
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series AQ1052N4S-T Features Item Summary 2.4nH(-0.3nH to +0.3nH), 630mA, 8, 0402 Lifecycle Stage Mass Production Standard packaging quantity (minimum)
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Original
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AQ1052N4S-T
630mA,
10000pcs
100MHz
175mm
630mA
820mA
6000MHz
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PDF
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47DBM
Abstract: No abstract text available
Text: RFAM9011 RFAM90111:1 SMT Transformer 450MHz TO 500MHz LOW NOISE/HIGH LINEARITY PA CONNECTORIZED MODULE Module, 2 RF Connectors, 1 DC Pin, 3 GND Pins 61.47 mm x 55.12 mm x 13.46 mm Features 5VOperation, 630mA High Output P1dB>+31dBm Low Noise Figure<0.5dB
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Original
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RFAM9011
RFAM90111
450MHz
500MHz
630mA
31dBm
45dBm
RFAM9011
500MHz.
47DBM
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PDF
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S501
Abstract: Breaking Capacity
Text: Bussmann 5 x 20mm Ferrule Fuses GDA GDA-V Fast Acting, High Breaking Capacity Dimensional Data Time-Current Characteristic Curves–Average Melt 50mA 63mA 80mA 100mA 125mA 160mA 200mA 250mA 315mA 400mA 500mA 630mA 800mA 1A 1.25A 1.6A 2A 2.5A 3.15A 4A 5A
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Original
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100mA
125mA
160mA
200mA
250mA
315mA
400mA
500mA
630mA
800mA
S501
Breaking Capacity
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PDF
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FSD-250mA
Abstract: FSD-200mA FSD-10A FSD-1A FSD-500mA FUSE 125mA FSD-P-10A glass fuse 2A 20mm FSD-800mA FUSE 315mA
Text: Type FSD Fast Acting Glass Tube Fuse 5 x 20mm www.optifuse.com Cartridge Catalog Number FSD-63mA FSD-80mA FSD-100mA FSD-125mA FSD-160mA FSD-200mA FSD-250mA FSD-315mA FSD-400mA FSD-500mA FSD-630mA FSD-800mA FSD-1A FSD-1.25A FSD-1.60A FSD-2A FSD-2.5A FSD-3.15A
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FSD-63mA
FSD-80mA
FSD-100mA
FSD-125mA
FSD-160mA
FSD-200mA
FSD-250mA
FSD-315mA
FSD-400mA
FSD-500mA
FSD-250mA
FSD-200mA
FSD-10A
FSD-1A
FSD-500mA
FUSE 125mA
FSD-P-10A
glass fuse 2A 20mm
FSD-800mA
FUSE 315mA
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PDF
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Untitled
Abstract: No abstract text available
Text: Bussmann 5 x 20mm Ferrule Fuses GDC GDC-V Time-Delay, Low Breaking Capacity 1A 2A 1.25A 1.6A 2.5A 3.15A 4A 5A 6.3A 315mA 400mA 500mA 630mA 800mA 80mA 200mA 250mA 160mA 100mA 21.10mm ±.81 10mm 20mm (±2.0) (±0.5) 32mA .22mm (±.008) 125mA Time-Current Characteristic Curves–Average Melt
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Original
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315mA
400mA
500mA
630mA
800mA
200mA
250mA
160mA
100mA
125mA
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PDF
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Untitled
Abstract: No abstract text available
Text: DMN2004K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) 20V 0.55Ω @ VGS = 4.5V 0.9Ω @ VGS = 1.8V ID TA = +25°C 630mA 410mA Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching
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Original
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DMN2004K
630mA
410mA
DS30938
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PDF
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msc diode
Abstract: MSC-10A MSC 1500E MSC-P-10A MSC150 MSC-12A 114 10A msc 37706 MSC-100mA MSC-200mA
Text: Type MSC/MSC-P Medium Time-Delay Glass Tube Fuse 5 X 20mm www.optifuse.com Cartridge Catalog Number MSC-100mA MSC-125mA MSC-150mA MSC-160mA MSC-200mA MSC-250mA MSC-300mA MSC-315mA MSC-350mA MSC-375mA MSC-400mA MSC-500mA MSC-600mA MSC-630mA MSC-700mA MSC-750mA
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MSC-100mA
MSC-125mA
MSC-150mA
MSC-160mA
MSC-200mA
MSC-250mA
MSC-300mA
MSC-315mA
MSC-350mA
MSC-375mA
msc diode
MSC-10A
MSC 1500E
MSC-P-10A
MSC150
MSC-12A
114 10A
msc 37706
MSC-100mA
MSC-200mA
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PDF
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FS-MFA-XX
Abstract: Fuse 250V 4A Fuse 250V 2A Fuse 250V 2,5A fuse f 3.15a 250v fuse 5a 250v Fuse 250V 1A 125v 7a fuse fuse 10a 125v 8A 250V Fuse
Text: 1 A 2 3 4 5 6 7 Rated Current 100mA 125mA 160mA 200mA 250mA 300mA 315mA 400mA 500mA 600mA 630mA 700mA 800mA 1A 1.25A 1.5A 1.6A 2A 2.5A 3A 3.15A MFA-P MFA B C MFA-PR MFA-PA D F RoHS compliant Rev. Description Date Approved G Drawing Name Approved Howard Checked Lizzy
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100mA
125mA
160mA
200mA
250mA
300mA
315mA
400mA
500mA
600mA
FS-MFA-XX
Fuse 250V 4A
Fuse 250V 2A
Fuse 250V 2,5A
fuse f 3.15a 250v
fuse 5a 250v
Fuse 250V 1A
125v 7a fuse
fuse 10a 125v
8A 250V Fuse
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PDF
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MOT-17
Abstract: 630mAh MOT17
Text: data sheet system: Lithium-Ion-Battery nominal voltage: 3,7V end charge voltage: 4,2V capacity nominal: minimal: after standard charge 700mAh at 0,2C discharge to 2,75V 630mAh at 0,2C discharge to 2,75V 600mAh at 1C discharge to 2,75V max. charge current:
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Original
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700mAh
630mAh
600mAh
700mA
350mA
700mA
MOT-17
MOT17
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PDF
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FUSE 400mA
Abstract: FUSE 125mA TSD-10A TSD-P-10A TSD-50 fuse tsd glass FUSE 1a
Text: Type TSD Time Delay Glass Tube Fuse 5 x 20mm www.optifuse.com Cartridge Catalog Number TSD-50mA TSD-63mA TSD-80mA TSD-100mA TSD-125mA TSD-160mA TSD-200mA TSD-250mA TSD-315mA TSD-400mA TSD-500mA TSD-630mA TSD-800mA TSD-1A TSD-1.25A TSD-1.6A TSD-2A TSD-2.5A
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TSD-50mA
TSD-63mA
TSD-80mA
TSD-100mA
TSD-125mA
TSD-160mA
TSD-200mA
TSD-250mA
TSD-315mA
TSD-400mA
FUSE 400mA
FUSE 125mA
TSD-10A
TSD-P-10A
TSD-50
fuse tsd
glass FUSE 1a
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PDF
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