Untitled
Abstract: No abstract text available
Text: InGaAlP-High Brightness-Lumineszenzdiode 632 nm InGaAlP High Brightness Light Emitting Diode (632 nm) F 0280D Vorläufige Daten / Preliminary Data Wesentliche Merkmale • • • • Feature Chipgröße 200 x 200 µm Wellenlänge: 632 nm Technologie:InGaAIP
|
Original
|
0280D
|
PDF
|
C1406
Abstract: No abstract text available
Text: InGaAlP-High Brightness-Lumineszenzdiode 632 nm InGaAlP High Brightness Light Emitting Diode (632 nm) F 0280D Vorläufige Daten / Preliminary Data Wesentliche Merkmale • • • • Feature Chipgröße 200 x 200 µm Wellenlänge: 632 nm Technologie:InGaAIP
|
Original
|
0280D
C1406
|
PDF
|
GMOY6088
Abstract: NM7001
Text: InGaAlP-High Brightness-Lumineszenzdiode 632 nm, Enhanced Power InGaAlP High Brightness Light Emitting Diode (632 nm, Enhanced Power) F 0280E Vorläufige Daten / Preliminary Data Wesentliche Merkmale • • • • Feature Chipgröße 200 x 200 µm Wellenlänge: 632 nm
|
Original
|
0280E
GMOY6088
NM7001
|
PDF
|
Untitled
Abstract: No abstract text available
Text: InGaAlP-High Brightness-Lumineszenzdiode 632 nm, Enhanced Power InGaAlP High Brightness Light Emitting Diode (632 nm, Enhanced Power) F 0280E Vorläufige Daten / Preliminary Data Wesentliche Merkmale • • • • Feature Chipgröße 200 x 200 µm Wellenlänge: 632 nm
|
Original
|
0280E
|
PDF
|
C1406
Abstract: No abstract text available
Text: InGaAlP-High Brightness-Lumineszenzdiode 632 nm InGaAlP High Brightness Light Emitting Diode (632 nm) F 0280D Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature Chipgröße 200 x 200 µm Wellenlänge: 632 nm Technologie:InGaAIP Typ. Lichtstärke: 35 mcd @ 20 mA (in TO18
|
Original
|
0280D
C1406
|
PDF
|
Untitled
Abstract: No abstract text available
Text: InGaAlP-High Brightness-Lumineszenzdiode 632 nm, Enhanced Power InGaAlP High Brightness Light Emitting Diode (632 nm, Enhanced Power) F 0280E Vorläufige Daten / Preliminary Data Wesentliche Merkmale • • • • Feature Chipgröße 200 x 200 µm Wellenlänge: 632 nm
|
Original
|
0280E
|
PDF
|
barcodescanner
Abstract: barcode scanner OSRAM automotive lamp F 1998A
Text: InGaAlP-High Brightness-Lumineszenzdiode 632 nm, High Optical Power InGaAlP High Brightness Light Emitting Diode (632 nm, High Optical Power) F 1998A Vorläufige Daten/Preliminary Data Wesentliche Merkmale Feature • Optimierte Lichtauskopplung durch Oberflächenstrukturierung und Stromverteilung
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SC5480 Silicon NPN Triple Diffused Horizntal Deflection Output HITACHI Features • High breakdown voltage VCES= 1500 V • Isolated package TO-3PFM • Built-in damper diode Outline TO-3PFM 1.Base 2.Collecto 3.Emitter ADE-208-632 Z 1st. Edition Oct. 1, 1998
|
OCR Scan
|
2SC5480
ADE-208-632
|
PDF
|
Mc14066 MOtorola
Abstract: 74hc4066A HC4066 hc4066a HC4316A MC14016 MC14066 MC74HCXXXXAN switch Mc14066 MOtorola switch Mc14016 MOtorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MC54/74HC4066A Quad Analog Switch/ Multiplexer/Demultiplexer High–Performance Silicon–Gate CMOS J SUFFIX CERAMIC PACKAGE CASE 632–08 14 1 The MC54/74HC4066A utilizes silicon–gate CMOS technology to
|
Original
|
MC54/74HC4066A
MC54/74HC4066A
HC4066A
MC14016
MC14066.
DL129
MC74HC4066A/D
Mc14066 MOtorola
74hc4066A
HC4066
HC4316A
MC14016
MC14066
MC74HCXXXXAN
switch Mc14066 MOtorola
switch Mc14016 MOtorola
|
PDF
|
2sc5480
Abstract: 2SC5480 equivalent damper 2SC548 Hitachi DSA001650
Text: 2SC5480 Silicon NPN Triple Diffused Horizntal Deflection Output ADE-208-632 Z 1st. Edition Oct. 1, 1998 Features • High breakdown voltage VCES = 1500 V • Isolated package TO–3PFM • Built-in damper diode Outline TO–3PFM C 2 1 B 1. Base 2. Collector
|
Original
|
2SC5480
ADE-208-632
2sc5480
2SC5480 equivalent
damper
2SC548
Hitachi DSA001650
|
PDF
|
ic 825 DNA
Abstract: CD4007A CD4007UB MC14007UB
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14007UB Dual Complementary Pair Plus Inverter L SUFFIX CERAMIC CASE 632 The MC14007UB multi–purpose device consists of three N–channel and three P–channel enhancement mode devices packaged to provide access to
|
Original
|
MC14007UB
MC14007UB
CD4007A
CD4007UB
MC14007UB/D*
MC14007UB/D
ic 825 DNA
CD4007UB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SKiiP 632 GB 120 - 315 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms
|
Original
|
|
PDF
|
skiip gb 120
Abstract: skiip 632 gb 120
Text: SKiiP 632 GB 120 - 315 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms
|
Original
|
IGBT11)
Rthjs10)
skiip gb 120
skiip 632 gb 120
|
PDF
|
MC1406L
Abstract: MC1506 MC1723G C1506 MC1506L 20PF 406L MC1539G MC155SG mc1723
Text: . specifications and Applications Information SIX BIT, MULTIPLYING DIGITAL-TO-ANALOG . . . designed of a six-bit for CONVERTER use where the output word an analog digital and current input is a linear product voltage. CERAMIC PACKAGE CASE 632 TO-116 FIGURE
|
Original
|
O-116
MC1506
MC1506L
MC1406L
MC1406L
MC1506
MC1723G
C1506
MC1506L
20PF
406L
MC1539G
MC155SG
mc1723
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C14016B Quad Analog Sw itch/Q uad M u ltip lexer L SUFFIX CERAM IC CASE 632 The MC14016B quad bilateral switch is constructed with MOS P-channel and N -channel enhancem ent mode devices in a single monolithic structure.
|
OCR Scan
|
C14016B
MC14016B
MC14016B/D
|
PDF
|
P 131 GB
Abstract: skiip 632 gb 120 315CTV713 skiip gb 120
Text: 5EMIKR0N SKiiP 632 GB 120 - 315 CTV Absolute Maximum Ratings Symbol Values Unite 1200 900 600 - 4 0 . + 150 3000 51 600 1200 6480 210 V |Conditions 1> IGBT & Inverse Diode V ces V c c 9> Operating D C link voltage lc T i 3 Theatsink ~ 25 °C V,sol 4) IGBT & Diode
|
OCR Scan
|
315CTV713)
B7-40
P 131 GB
skiip 632 gb 120
315CTV713
skiip gb 120
|
PDF
|
mc14066b motorola
Abstract: MC14066B CD4016 HC4066 MC14016B MC14XXXBCL MC14XXXBCP MC14XXXBD motorola cmos Motorola HC4066
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14066B Quad Analog Switch/Quad Multiplexer L SUFFIX CERAMIC CASE 632 The MC14066B consists of four independent switches capable of controlling either digital or analog signals. This quad bilateral switch is useful in signal gating, chopper, modulator, demodulator and CMOS logic
|
Original
|
MC14066B
MC14066B
MC14016B,
MC14066B/D*
MC14066B/D
mc14066b motorola
CD4016
HC4066
MC14016B
MC14XXXBCL
MC14XXXBCP
MC14XXXBD
motorola cmos
Motorola HC4066
|
PDF
|
Untitled
Abstract: No abstract text available
Text: g MOTOROLA QUAD 2-INPUT EXCLUSIVE-OR GATE QUAD 2-INPUT EXCLUSIVE-OR GATE FAST SCHOTTKY TTL VCC J SUFFIX CERAMIC CASE 632-08 N SUFFIX PLASTIC CASE 646-06 B D SUFFIX SOIC CASE 751A-02 ORDERING INFORMATION MC54FXXJ MC74FXXN MC74FXXD Ceramic Plastic SOIC
|
OCR Scan
|
MC54FXXJ
MC74FXXN
MC74FXXD
51A-02
MC54/74F86
54/74F
|
PDF
|
ku 602 vc
Abstract: CD4016 CD4016B CD4066B HC4016 MC14016B MC14066B MC14XXXBCL MC14XXXBCP MC14XXXBD
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14016B Quad Analog Switch/Quad Multiplexer L SUFFIX CERAMIC CASE 632 The MC14016B quad bilateral switch is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. Each MC14016B consists of four independent switches capable of
|
Original
|
MC14016B
MC14016B
CD4016B,
CD4066B
MC14016B/D*
MC14016B/D
ku 602 vc
CD4016
CD4016B
CD4066B
HC4016
MC14066B
MC14XXXBCL
MC14XXXBCP
MC14XXXBD
|
PDF
|
MC14024B
Abstract: MC14024 CD4024B MC14023B MC14023UB MC14XXXBCL MC14XXXBCP MC14XXXBD ceramic case 632
Text: MOTOROLA MC14023B see Page 6-5 SEMICONDUCTOR TECHNICAL DATA MC14023UB (see Page 6-14) MC14024B 7-Stage Ripple Counter L SUFFIX CERAMIC CASE 632 The MC14024B is a 7–stage ripple counter with short propagation delays and high maximum clock rates. The Reset input has standard noise
|
Original
|
MC14023B
MC14023UB
MC14024B
MC14024B
CD4024B
MC14024B/D*
MC14024B/D
MC14024
CD4024B
MC14023B
MC14023UB
MC14XXXBCL
MC14XXXBCP
MC14XXXBD
ceramic case 632
|
PDF
|
AD9951
Abstract: E03558 ADN2812 AN-632
Text: AN-632 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • Tel: 781/329-4700 • Fax: 781/326-8703 • www.analog.com Provisioning Data Rates Using the AD9951 DDS as an Agile Reference Clock for the ADN2812 Continuous-Rate CDR
|
Original
|
AN-632
AD9951
ADN2812
AD9951
E03558
AN-632
|
PDF
|
MC14584B
Abstract: schmitt trigger adc mc14069ub motorola mc14584 motorola CASE 632 CERAMIC DIMENSION CD40106
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14584B Hex Schmitt Trigger L SUFFIX CERAMIC CASE 632 The MC14584B Hex Schmitt Trigger is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These devices find primary use where low power dissipation and/or high
|
Original
|
MC14584B
MC14584B
MC14069UB
MC1406nufacture
MC14584B/D*
MC14584B/D
schmitt trigger adc
mc14069ub motorola
mc14584
motorola CASE 632 CERAMIC DIMENSION
CD40106
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROi-A TRIPLE 3-INPUT NAND GATE TRIPLE 3-INPUT NAND GATE FAST SCHOTTKY TTL vcc J SUFFIX CERAMIC CASE 632-08 N SUFFIX PLASTIC CASE 646-06 14 D SUFFIX SOIC CASE 751A-02 14 ORDERING INFORMATION MC54FXXJ MC74FXXN MC74FXXD Ceramic Plastic SOIC GUARANTEED OPERATING RANGES
|
OCR Scan
|
51A-02
MC54FXXJ
MC74FXXN
MC74FXXD
MC54/74F10
54/74F
|
PDF
|
SN54LSXXXJ
Abstract: No abstract text available
Text: <8> MOTOROLA SN54/74LS260 DUAL 5-INPUT NOR GATE DUAL 5-INPUT NOR GATE vcc LOW POWER SCHOTTKY J SUFFIX CERAMIC CASE 632-08 GND 1 N SUFFIX FrP csss, 1 D SUFFIX SOIC CASE 751A-02 5 ORDERING INFORMATION SN54LSXXXJ SN74LSXXXN SN74LSXXXD Ceramic Plastic SOIC GUARANTEED OPERATING RANGES
|
OCR Scan
|
SN54/74LS260
51A-02
SN54LSXXXJ
SN74LSXXXN
SN74LSXXXD
SN54/74LS260
|
PDF
|