Leach relay M83536
Abstract: MS25271-D1 M83536 M83536/10-024 M39016-6-109L MS27400 MS27743 MS27401 M83536/2-024 MS27400-9
Text: QPL Qualified Products Listing Solutions for Power Switching and Control Authorized Worldwide Distributors UNITED STATES ALABAMA Avnet Electronics Marketing Huntsville Ph: 256 837-8700; Fax: 830-2565 ARIZONA Avnet Electronics Marketing Phoenix Ph: (480) 643-5600; Fax: 643-5775
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F-57430
5/2004/2K
Leach relay M83536
MS25271-D1
M83536
M83536/10-024
M39016-6-109L
MS27400
MS27743
MS27401
M83536/2-024
MS27400-9
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Untitled
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : CDLE-033-643 REV.: 2 Page: 1/4 5.0mm Round Type LED Lamps PART NO. : 333-2SDRC/S530-A3 █ Features : ● Choice of various viewing angles ● Available on tape and reel. ● Reliable and robust ECN: █ Package Dimensions:
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CDLE-033-643
333-2SDRC/S530-A3
25mge:
30min
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PC5430
Abstract: 64353204
Text: FEATURES PROFESSIONAL LED INDICATORS Ø8.1mm Mounting Black anodised aluminium housing 643 SERIES PACK QUANTITY = 10 PIECES Short body length is ideal for portable equipment Wide viewing angle Sealed to IP67 Suitable for high vibration applications SPECIFICATION
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Untitled
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : CDLE-033-643 REV.: 3 Page: 1/4 5.0mm Round Type LED Lamps PART NO. : 333-2SDRC/S530-A3 █ Features : ● Choice of various viewing angles ● Available on tape and reel. ● Reliable and robust ECN: Package Dimensions:
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CDLE-033-643
333-2SDRC/S530-A3
30min
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TL092
Abstract: AN-643 signal path designer
Text: National Semiconductor Application Note 643 Joe Cocovich December 1989 INTRODUCTION The control and minimization of Electro-Magnetic Interference EMI is a technology that is, out of necessity, growing rapidly. EMI will be defined shortly but, for now, you might be
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LT1160
Abstract: LT1162 LT1158 LT1161 LT1336 LT1573 R337
Text: RELIABILITY DATA LT1158 / LT1160 / LT1161 / LT1162 / LT1336 / LT1573 12/8/2000 • OPERATING LIFE TEST PACKAGE TYPE SAMPLE SIZE OLDEST DATE CODE PLASTIC DIP SOIC/SOT/MSOP SSOP/TSSOP 468 9126 98 9523 77 9827 643 • PRESSURE COOKER TEST AT 15 PSIG, +121°C
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LT1158
LT1160
LT1161
LT1162
LT1336
LT1573
00-03-6209B.
LT1573
R337
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PDB-V110
Abstract: No abstract text available
Text: PDB-V110 Blue Enhanced Photovoltaic Silicon Photodiode .084 [2.13] .076 [1.93] ±.005 [0.13] .053 [1.35] PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] ANODE INDEX 2X Ø.017 [0.43] ANODE 120° VIEWING ANGLE .657 [16.69] .643 [16.33] .484 [12.29]
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PDB-V110
PDB-V110
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ral 9011
Abstract: IP 9011 chip led 3016 DRUCKHAUBE
Text: Befehls- und Meldegeräte 96 96 Befehls- und Meldegeräte Inhaltsübersicht Baureihe 96 Beschreibung Seite 641 Geräteaufbau Seite 642 Sortiment - Geräte Standard Einbau - Zubehör / Einzelteile 640 03.2000 Seite 643 Seite 644 Technische Daten Seite 651 Massbilder / Bauteilelayouts
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minor project proposal on electronics
Abstract: TL092 AN-643 signal path designer national special function analog and digital circuits
Text: National Semiconductor Application Note 643 Joe Cocovich April 2001 INTRODUCTION The control and minimization of Electro-Magnetic Interference EMI is a technology that is, out of necessity, growing rapidly. EMI will be defined shortly but, for now, you might be
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Untitled
Abstract: No abstract text available
Text: D-Subminiature High Profile Straight PCB Tail M21 Series PLUG ASSEMBLY MOUNTING OPTIONS 02 Option 03 Option 04 Option SOCKET ASSEMBLY PC Board Layout Unit: Inch / mm Dimensional: Socket Assembly Dimensional: Plug Assembly CONTACTS A B C CONTACTS A B C 9 .643 16.33
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Hitachi DSA00166
Abstract: Nippon capacitors
Text: HB56UW1672EJN Series HB56UW1664EJN Series 16777216-word x 72-bit High Density Dynamic RAM Module 16777216-word × 64-bit High Density Dynamic RAM Module ADE-203-643 Z Preliminary Rev. 0.0 Aug. 31, 1996 Description The HB56UW1672EJN Series, HB56UW1664EJN Series belong to 8-byte DIMM (Dual in-line Memory
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HB56UW1672EJN
HB56UW1664EJN
16777216-word
72-bit
64-bit
ADE-203-643
Hitachi DSA00166
Nippon capacitors
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HD74CBT3244
Abstract: Hitachi DSA0015
Text: HD74CBT3244 Octal FET Bus Switch ADE-205-643 Z Preliminary Rev. 0 August 2001 Description The HD74CBT3244 provides eight bits of high speed TTL-compatible bus switching in a standard ’244 device pinout. The low on state resistance of the switch allows connections to be made with minimal
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HD74CBT3244
ADE-205-643
HD74CBT3244
D-85622
D-85619
Hitachi DSA0015
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A6480
Abstract: rocking armature telephone model PHONE KEYPAD 1 line 2 phone switch
Text: Issued March 1986 A6480 Test telephone model 284/2 Stocknumber 498-643 Description This test telephone similar to BT type 284/2 may be used as a normal 'phone for two way communication or as a 'monitor' unit. Pulse or tone signalling may be selected, and LEDs indicate line polarity. In the monitor (on hook)
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A6480
100ms
A6480
rocking armature
telephone model
PHONE KEYPAD
1 line 2 phone switch
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Untitled
Abstract: No abstract text available
Text: r z 7 SG S TH O M SO N ^ 7 #„ liM»g[LgCT»OigS M54HCT245/640/643 M74HCT245/640/643 OCTAL BUS TRANSCEIVER 3-STATE HCT245 NON INVERTING, HCT640 INVERTING, HCT643 INVERTING/NON INVERTING • LOW POWER DISSIPATION lCC = 4fiA (MAX.) at Ta = 25°C ■ COMPATIBLE WITH TTL OUTPUTS
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M54HCT245/640/643
M74HCT245/640/643
HCT245
HCT640
HCT643
54/74LS245/640/643
M54HCTXXX
M74HCTXXX
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC REVISIONS DIST GP oo ALL RIGHTS RESERVED. LTR DESCRIPTION A 3 0 . 8 1 ± 0.38[1.21 3 + .0 15] RECOMMENDATIONS —24.99-[.9 8 4 ] 16.33[.643]
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31MAR2000
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Nippon capacitors
Abstract: No abstract text available
Text: HB56UW1672EJN Series HB56UW1664EJN Series 16777216-word x 72-bit High Density Dynamic RAM Module 16777216-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-643 Z Preliminary Rev. 0.0 Aug. 31, 1996 Description The HB56UW1672EJN Series, HB56UW1664EJN Series belong to 8-byte DIMM (Dual in-line Memory
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HB56UW1672EJN
HB56UW1664EJN
16777216-word
72-bit
64-bit
ADE-203-643
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: HB56UW1672EJN Series, HB56UW1664EJN Series 16777216-word x 72-bit High Density Dynamic RAM Module 16777216-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-643 Z Preliminary Rev. 0.0 D escription The HB56UW 1672EJN Series, HB56UW 1664EJN Series belong to 8-byte DIMM (Dual in-line Memory
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HB56UW1672EJN
HB56UW1664EJN
16777216-word
72-bit
64-bit
ADE-203-643
HB56UW
1672EJN
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molex 5484
Abstract: m3 screw lock d-sub j9307
Text: CKT S IZE DIM 1 9 o 40 FLUSH INSERT 15 25 37 A DIM C DIM D 2.77 TYP.109 DIM 11.07 F 24.99 1.213 .984 16.33 .643 .436 .274 39.14 33.32 24.66 19.38 6.97 6.96 .274 1.541 1.312 .971 .763 53.04 47.04 38.38 33.22 6.91 2.088 1.852 1.5 II 1.308 .272 69.32 63.50 2.500
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M/09/06
molex 5484
m3 screw lock d-sub
j9307
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Untitled
Abstract: No abstract text available
Text: _a_ File No. I 643 zn: SHEET ILL SPECIFICAITON Contact Resistance:30Milliohm s Max Insulation Resistance: 10OOMegohm Min Dielectric Voltage:500V AC One Sec Level Operating Temperaure:—5 5 'C ~ + 8 5 "C Housing:PBT Glass Fibre U L 9 4 V -0 White Contact:Bronze T = 0 .2 0 ± 0 .0 2 m m
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30Milliohm
10OOMegohm
USB1X04PS-H
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K896
Abstract: molex 5484
Text: CKT S IZ E DIM 9 M3 FLUSH INSERT 15 25 37 A DIM C DIM D DIM E 11.07 24.99 1.213 .984 16.33 .643 .436 6.96 .274 39.14 33.32 24.66 19.38 6.97 .274 1.541 1.312 .971 .763 53.04 47.04 38.38 33.22 6.91 2.088 1.852 1.5 II 1.308 .272 69.32 63.50 2.500 54.84 49.83
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T97-380
T96-I58
M/09/06
K896
molex 5484
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSTTLs M74LS643-1P OCTAL BUS TRANSC EIVER W IT H 3-S T A T E O UTPUT DESCRIPTION The M 7 4LS 643-1P is a semiconductor integrated circuit PIN CONFIGURATION TOP VIEW containing 8 bus transmitters/receivers w ith inverted and CONTRO L IN P U T non-inverted outputs.
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M74LS643-1P
643-1P
--15m
b2LHfl27
0013Sbl
14-PIN
16-PIN
20-PIN
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642B 8pin ic
Abstract: ic631 85637 IC-6430 641B
Text: MIC631732/33 and MIC641/42/43 r ^ n Step-Up Switching Regulators The M IC 631/641, M IC632/642, and M IC633/643 are fixed frequency, hysteretic-m ode, step-up boost regulators. Switching at 50kHz, and requiring only two external com po nents, these controllers form a com pletely functional, fully
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MIC631732/33
MIC641/42/43
IC632/642,
IC633/643
50kHz,
MIC63x
150mW)
MIC64x
642B 8pin ic
ic631
85637
IC-6430
641B
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Untitled
Abstract: No abstract text available
Text: CKT S IZ E DIM 9 M2.6 FLUSH INSERT 15 25 37 A DIM C DIM D DIM E 11.07 24.99 1.213 .984 16.33 .643 .436 6.96 .274 39.14 33.32 24.66 19.38 6.97 .274 1.541 1.312 .971 .763 53.04 47.04 38.38 33.22 6.91 2.088 1.852 1.5 II 1.308 .272 69.32 63.50 2.500 54.84 49.83
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T98-277
T97-380
T96-I58
M/09/06
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Untitled
Abstract: No abstract text available
Text: 19- 1783; Rev 0; 6/97 High-Efficiency, Step-Up DC-DC Converters for 1V Inputs Features The MAXI 642/MAXI 643 are high-efficiency, low-voltage, step-up DC-DC converters intended for devices pow ered by a single alkaline cell. They feature low quies cent supply currents and are supplied in the ultra-small
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642/MAXI
7bb51
ib25M
MAX1642/MAX
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