smd transistor x8
Abstract: smd transistor c011 12v 3a regulator LM317 WP smd transistor M5482 L298 L297 M5480 5kw dc-dc SGSF463 BYT12PI100
Text: DATA LOGGERS RECOMMENDED PRODUCTS FROM SGS-THOMSON PRINT HEAD HAMMER DRIVE Type Function ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS L9222 High Current Darlington Drivers Medium Current Low Saturation Transistor Array BDX53 BDX54 Series BDW93 & BDW94 Series
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ULN2003A
ULN2064B
ULN2068B
ULN2074B
L702N/A
L6221AS
L9222
PBL3717A
L6201/2/3
L6204
smd transistor x8
smd transistor c011
12v 3a regulator LM317
WP smd transistor
M5482
L298 L297
M5480
5kw dc-dc
SGSF463
BYT12PI100
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P-Channel Depletion-Mode
Abstract: MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545
Text: Aerospace and Defense Product Offering Siliconix MIL–S–19500 Compliant Devices 2N5547JANTX MIL–S–19500/430 Siliconix Part No. Description 2N5547JANTXV MIL–S–19500/430 2N4856JAN MIL–S–19500/385 2N6660JANTX MIL–S–19500/547 2N4856JANTX MIL–S–19500/385
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2N5547JANTX
2N5547JANTXV
2N4856JAN
2N6660JANTX
2N4856JANTX
2N6660JANTXV
2N4856JANTXV
2N6661JAN
2N4857JAN
2N6661JANTX
P-Channel Depletion-Mode
MD80C31
JANTX2N4858
5962-9089101MEA
SI9110AK
JANTX2N6661
4Kx8 sram ttl
MGM TRANSFORMER
JANTX2N5114
janTXV2N5545
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PDF
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3524CP
Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS
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HB56U132
HB56H132
HB56U232
HB56H232
HN62W454B
512kx8
256kx16
HN62W4416N
16Mbit
1Mx16
3524CP
2MX40
RAM128KX8 DIP
HM624256
HM62832
16Mbit FRAM
Dram 168 pin EDO 8Mx8
hm62256
flash 32 Pin PLCC 16mbit
HN27C1024
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PDF
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W986416EH
Abstract: W9864G2EH W981216DH verilog DTMF decoder ISD1600 W9825G6CH W9812G6DH w981616ch SIS 730S isd1620
Text: PRODUCT GUIDE Winbond ISSI 2005 http://www.hengsen.cn 产品指南手册 PRODUCT GUIDE =WinbondISSI 授权香港及中国代理= 8 位单片机标准件 型号 W78C32C ROM 型式 ROM ROM RAM I/O 脚 外扩存储 器空间 工作速度 封装 定时器/
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W78C32C
Q4/04
IS25C64A-2
IS25C64A-3
16Kx8
IS25C128-2
W986416EH
W9864G2EH
W981216DH
verilog DTMF decoder
ISD1600
W9825G6CH
W9812G6DH
w981616ch
SIS 730S
isd1620
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PDF
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Untitled
Abstract: No abstract text available
Text: P4C164LL VERY LOW POWER 8Kx8 STATIC CMOS RAM FEATURES VCC Current Commercial/Industrial — Operating: 55 mA — CMOS Standby: 3 µA Access Times —80/100 (Commercial or Industrial) —90/120 (Military) Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE1, CE2 and OE
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P4C164LL
--28-Pin
P4C164LL
SRAM116
SRAM116
Oct-2005
Aug-2006
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PDF
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Untitled
Abstract: No abstract text available
Text: P4C164LL VERY LOW POWER 8KX8 STATIC CMOS RAM FEATURES VCC Current Commercial/Industrial — Operating: 55 mA — CMOS Standby: 3 µA Access Times —80/100 (Commercial or Industrial) —90/120 (Military) Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE1, CE2 and OE
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Original
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P4C164LL
28-Pin
P4C164LL
SRAM116
SRAM116
Oct-2005
Aug-2006
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PDF
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EDI8808CB
Abstract: No abstract text available
Text: ^EDI _ EDI8808CB Electronic Designs Inc. High Speed, Low Power 64K Monolithic SRAM QiF MM1]©i 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Random Access Memory Static RAM organized as 8Kx8.
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OCR Scan
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EDI8808CB
EDI8808CB
536bit,
MIL-STD-883,
D02VSS
A0-A12
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PDF
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EDI8808CB
Abstract: C323 64K 8KX8 CMOS SRAM sram 8kx8
Text: ^EDI _ EDI8808CB E le ctro n ic D « d g ru Inc. High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Static RAM organized as 8Kx8. Ali inputs and outputs are TTL compatible and allow
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OCR Scan
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EDI8808CB
EDI8808CB
536bit,
MIL-STD-883,
A0-A12
C323
64K 8KX8 CMOS SRAM
sram 8kx8
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PDF
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A3738
Abstract: CA1023 8kx8 sram
Text: ^EDI _ EDI8808CB Electronic Designs Inc High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Random Access Memory • Access Times 20,25,35, and 45ns
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OCR Scan
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EDI8808CB
EDI8808CB
536bit,
D02VSS
0-A12
A3738
CA1023
8kx8 sram
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PDF
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Untitled
Abstract: No abstract text available
Text: ^EDI _ EDI8808CB Electronic Designs Inc. High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic The EDI8808CB is a 65,536bit, high speed CMOS Q iF M M 1]© i Features Static RAM organized as 8Kx8. All inputs and outputs are TTL compatible and allow
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OCR Scan
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EDI8808CB
EDI8808CB
536bit,
MIL-STD-883,
|
PDF
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI8808CA35/45/55/70 High Speed 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CA is a high performance, low power 64Kbit CMOS Static CMOS Static RAM organized as 8192 words by 8 bits Random Access Memory • Access Times 35,45,55, and 70ns
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OCR Scan
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EDI8808CA35/45/55/70
EDI8808CA
64Kbit
EDI8808CA35/45/55/70
EDI8808CA35/45/S5/70
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PDF
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26R2-5
Abstract: No abstract text available
Text: m EDI8808CA35/45/55ÏÏ0 o \ High Speed 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CA is a high performance, low power CMOS Static RAM organized as 8192 words by 8 bits each. In addition to 13 address inputs, and 8 common
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OCR Scan
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EDI8808CA35/45/55/70
EDI8808CA
MIL-STD-883C,
EDI8808CA35/45/55/70
26R2-5
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PDF
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synchronous sram
Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
Text: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK
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OCR Scan
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EDH816H64C
EDI2018QC
EDI20181C
EDI20182C
EDI20183C
EDI20184C
EDI20185C
EDI2040C
EDI2041C
EDI2042C
synchronous sram
4Kx1 DRAM
SRAM 6T
SRAM
DRAM 64kx16
edi8832
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PDF
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sram 8kx8 memory map
Abstract: 8kx8 eprom pin diagram 80c31 application MAX11213
Text: <U x_0 ^EDI 11* Aft ^ The fu tu re .to d a y , • ■ ■ E B H 6 0 7 G 31 IxPak Family 8/12 MHz h h Microcomputer 80C31 Based, CMOS 8K or 32Kx8 EPROM plus 8Kx8 SRAM h h h h h ih h h h im h Features The EDH 607C31 ^PAK family from EDI Is the first in a series of high density microcomputer
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OCR Scan
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80C31
32Kx8
MCS-51
687C31,
697C31,
607C31
sram 8kx8 memory map
8kx8 eprom pin diagram
80c31 application
MAX11213
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PDF
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8kx8 eprom pin diagram
Abstract: XTAL 12MH 80C31 F800H MCS-51 8kx8 sram static ram 8KX8 INTEL 24 PIN CERAMIC DUAL-IN-LINE PACKAGE
Text: 3230114 E L E C T R O N I C D E S I G N S INC ELECTRONIC DESIGNS IN C 85D 00184 B S D E | 323011M '37 D □□001A4 3 EDH 607C31 ¡S ri J I jaPak Family 8/12 MHz T h e fu tu r e . .to d a y . Microcomputer 80C31 Based, CMOS 8K or 32Kx8 EPROM plus 8Kx8 SRAM
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OCR Scan
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3S3011M
607C31
80C31
32Kx8
607C31
80C31,
or32Kx8
8kx8 eprom pin diagram
XTAL 12MH
F800H
MCS-51
8kx8 sram
static ram 8KX8
INTEL 24 PIN CERAMIC DUAL-IN-LINE PACKAGE
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PDF
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K4505
Abstract: 1601l 4Kx4 SRAM MK48T87B Z30A SRAM 2kx8 sram IMS1630 256KX1 MK41S80
Text: ALPHANUMERICAL INDEX unless otherwise specified all Static RAMs listed are produced in CMOS technology Part Nuraöer Organization 4Kx1 IMS1203 ( 4Kx1 IMS1203M , 1Kx4 IMS1223 1Kx4 IMS1223M ' 16Kx1 IMS1400M 16Kx1 IMS1403 ' IMS1403M/LM f 16Kx1 IM S1420M A 4Kx4
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OCR Scan
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IMS1203
IMS1203M
IMS1223
IMS1223M
16Kx1
IMS1400M
IMS1403
IMS1403M/LM
K4505
1601l
4Kx4 SRAM
MK48T87B
Z30A
SRAM
2kx8 sram
IMS1630
256KX1
MK41S80
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PDF
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sram 8kx8 memory map
Abstract: 80C31 Development Board 80C31 F800H MCS-51 Ram 64k 8kX8 80C31 instruction set UPAK
Text: açx.o ^ ' it* ' E M 607G31 jxPak Family 8/12 MHz Th e fu tu re . . . today. Microcomputer 80C31 Based, CMOS 8K or 32Kx8 EPROM plus 8Kx8 SRAM Features The EDH 607C31 uPAK family from EDI is the first in a series of high density microcomputer modules based on the industry-standard 80C31
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OCR Scan
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607G31
80C31
32Kx8
607C31
80C31,
or32Kx8
sram 8kx8 memory map
80C31 Development Board
F800H
MCS-51
Ram 64k 8kX8
80C31 instruction set
UPAK
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PDF
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taa 480
Abstract: No abstract text available
Text: 64-bit Cache M odule A S 7 M 6 4 T 3 A Series Features Logic Block Diagram ♦ 8-bit 5V asynchronous tag , — * — » -► — ► ♦ High speed: tAA= 12-15 ns r LA 5 -19 I A4B A3B ECS OE — — — — ► A4 ► ► CE ► OE 1 “ I I A4A A3A E£S
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OCR Scan
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64-bit
AS7M64T3256A-12)
SRI655
32/64K
32/64K
taa 480
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PDF
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KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7
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OCR Scan
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
KM44C256C-6
KM44C256CL-6
KM44C256CSL-6
KM41C4000C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000C-8
KMCJ532512
KM23C1000-20
KM28C64B
KMM594
KM718B90-12
zip 40pin
30-pin simm memory "16m x 8"
KM41C4000C-6
KM41C16000ALL
KM48V2104AL
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PDF
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BR93LC46A
Abstract: BR9021B
Text: 7 f l 2 í m tí 0 0 0 7 3 0 0 M□ Lf WDHffl RHri EEPROM •Serial 3-wire Operating voltage Capacity Bit Power Organization (Word X Bit) Part No. supply (V) Read(V) Write(V) Curent consunption(Max) Write cycle Active Stand-by time(Max) <mA) Operating temp Rewritability
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OCR Scan
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64x16
128X16
256X16
BR93LL46/F
BR93LC46/F
BR93LC46A/AF
BR93LC56/F
BR93LC56A/AF
BR93LC66/RF
BR93LC66A/ARF
BR93LC46A
BR9021B
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PDF
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Untitled
Abstract: No abstract text available
Text: H ig h p e r f o r m a n c e 2 5 6 / 5 12 K b y te 3.3V C ac h e m o d u le s •■ | A S 7 M 6 4 T 3 2 5 6 A A sync A S 7 M 6 4 T 3 5 1 2 A A sync R i.rct A S7M 64T3256B B u rst A S 7 M 6 4 T 3 5 1 2B B u rst Low voltage 2 5 6 /5 1 2 KByte cache modules w ith tag
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OCR Scan
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64-bit
AS7M64T32S6A
AS7M64T3512A
AS7M64T3256A
64T3512A
64T3256A-12)
60MHz*
64T3256A
3256B
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PDF
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Untitled
Abstract: No abstract text available
Text: K 0 A KAOHSIUNG 3bE D m SD4b0fl2 OODDDlt □ • K O A ' f - H u - o \ t - u\.<\ - n - DV u / SEMICONDUCTOR DEVICES * MPU • ROM M bit 16K 32K EPROM M2716 • M 2732 M2764A TS27C64A M27128A M 27256 M27C256B M27512 M27C512 M27C1000 M27C1001 M27C1024 2KX8
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OCR Scan
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M2716
M2764A
TS27C64A
M27128A
M27C256B
M27512
M27C512
M27C1000
M27C1001
M27C1024
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PDF
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HC6364
Abstract: IH00 Honeywell sram 8Kx8
Text: HONEYWELL/S S E C 15E D | MSS1Ô72 0000433 3 | Honeywell HC6464 Military Products T - 4 d-2 5 -0 5 ' 64K x 1 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 jim Process • Similar Characteristics to HC6364 - 8Kx8 SRAM
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OCR Scan
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HC6464
1x101
1x109
HC6364
IH00
Honeywell sram 8Kx8
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PDF
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FM1608
Abstract: FM1608-120-P FM1608-120-S
Text: FM1608 R aM TR O N 64Kb Bytewide F RAM Memory Features SRAM & EEPROM Compatible 64K bit Ferroelectric Nonvolatile RAM • • Organized as 8,192 x 8 bits • High endurance 10 Billion 10 10 read/writes • 10 year data retention at 85° C • NoDelay write
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OCR Scan
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FM1608
FM1608
FM1608-120-P
FM1608-120-S
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PDF
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