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Text: Adapters, In-Series 1.85mm, DC-65 GHz, Bulkhead Mount SPECIFICATIONS: Models: 5292 Electrical: Frequency Range VSWR DC - 18 GHz 18 - 40 GHz 40 - 65 GHz Nominal Impedance Operating Temp Range DC - 65 GHz 1.25:1 Max. 1.40:1 Max. 1.50:1 Max. 50 Ohms -65°C to +85°C
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foto sensor
Abstract: BPX66 Q62702-P27 Q62702-P80 VL320 41870
Text: BPX 65 BPX 66 Silizium-PIN-Fotodiode Silicon PIN Photodiode BPX 65 BPX 66 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm ● BPX 65: Hohe Fotoempfindlichkeit
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foto sensor
Abstract: BPX-65 foto transistor Q62702-P80 Q62702-P27
Text: BPX 65 BPX 66 Silizium-PIN-Fotodiode Silicon PIN Photodiode BPX 65 BPX 66 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm ● BPX 65: Hohe Fotoempfindlichkeit
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5292
Abstract: UN 417
Text: Adapters, In-Series 1.85mm, DC-65 GHz, Bulkhead Mount SPECIFICATIONS: Models: 5292 Electrical: Frequency Range VSWR DC - 18 GHz 18 - 40 GHz 40 - 65 GHz Nominal Impedance Operating Temp Range DC - 65 GHz 1.25:1 Max. 1.40:1 Max. 1.50:1 Max. 50 Ohms -65°C to +85°C
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DC-65
5292
UN 417
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Untitled
Abstract: No abstract text available
Text: ADAPTERS, IN-SERIES 1.85mm, DC - 65 GHz SPECIFICATIONS: Models: 5173, 5174, 5175 Electrical: Frequency Range VSWR DC - 26.5 GHz 26.5 - 50 GHz 50 - 65 GHz Impedance Operating Temp Range DC - 65 GHz Typical performance Model 5175 1.25:1 Max. 1.35:1 Max. 1.40:1 Max.
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Text: ADAPTERS, In-Series 1.85mm, DC - 65 GHz, Bulkhead Mount SPECIFICATIONS: Models: 5289, 5290 Electrical: DC - 65 GHz 1.25:1 Max. 1.35:1 Max. 1.40:1 Max. 50 Ohms -65°C to +125°C Mechanical: Connectors Typical performance 1.6:1 Passivated Stainless Steel 1.5:1
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Abstract: No abstract text available
Text: ADAPTERS, In-Series 1.85mm, DC - 65 GHz, Bulkhead Mount SPECIFICATIONS: Models: 5289, 5290 Electrical: DC - 65 GHz 1.25:1 Max. 1.35:1 Max. 1.40:1 Max. 50 Ohms -65°C to +125°C Mechanical: Connectors Typical performance 1.6:1 Passivated Stainless Steel 1.5:1
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Text: ADAPTERS, In-Series 1.85mm, DC - 65 GHz, Bulkhead Mount SPECIFICATIONS: Models: 5289, 5290 Electrical: DC - 65 GHz 1.25:1 Max. 1.35:1 Max. 1.40:1 Max. 50 Ohms -65°C to +125°C Mechanical: Connectors Typical performance 1.6:1 Passivated Stainless Steel 1.5:1
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Text: ADAPTERS, In-Series 1.85mm, DC - 65 GHz, Bulkhead Mount SPECIFICATIONS: Models: 5289, 5290 Electrical: DC - 65 GHz 1.25:1 Max. 1.35:1 Max. 1.40:1 Max. 50 Ohms -65°C to +125°C Mechanical: Connectors Typical performance 1.6:1 Passivated Stainless Steel 1.5:1
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Untitled
Abstract: No abstract text available
Text: ADAPTERS, In-Series 1.85mm, DC - 65 GHz, Bulkhead Mount SPECIFICATIONS: Models: 5289, 5290 Electrical: DC - 65 GHz 1.25:1 Max. 1.35:1 Max. 1.40:1 Max. 50 Ohms -65°C to +125°C Mechanical: Connectors Typical performance 1.6:1 Passivated Stainless Steel 1.5:1
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Abstract: tci 571 GETY6013 Q62702-P27 BPX-65
Text: Silizium-PIN-Fotodiode Silicon PIN Photodiode BPX 65 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • BPX 65: Hohe Fotoempfindlichkeit • Hermetisch dichte Metallbauform TO-18 , geeignet bis 125 oC1) Features
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Q62702-P27
GETY6013
foto sensor
tci 571
GETY6013
Q62702-P27
BPX-65
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foto sensor
Abstract: BPX65 GET06013 Q62702-P27 bpx 65
Text: Silizium-PIN-Fotodiode Silicon PIN Photodiode BPX 65 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • BPX 65: Hohe Fotoempfindlichkeit • Hermetisch dichte Metallbauform TO-18 , geeignet bis 125 oC1) Features
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Q62702-P27
GET06013
foto sensor
BPX65
GET06013
Q62702-P27
bpx 65
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foto sensor
Abstract: osram bpx 65 photodiode BPX osram GETY6013 Q62702-P27
Text: Silizium-PIN-Fotodiode Silicon PIN Photodiode BPX 65 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • BPX 65: Hohe Fotoempfindlichkeit • Hermetisch dichte Metallbauform TO-18 , geeignet bis 125 oC
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Q62702-P27
foto sensor
osram bpx 65 photodiode
BPX osram
GETY6013
Q62702-P27
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Untitled
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Text: ADAPTERS, In-Series 1.85mm, DC - 65 GHz, Bulkhead Mount SPECIFICATIONS: Models: 5289, 5290 Electrical: DC - 65 GHz Typical performance 1.6:1 1.25:1 Max. 1.35:1 Max. 1.40:1 Max. 50 Ohms -65°C to +125°C 1.5:1 1.4:1 VSWR Frequency Range VSWR DC - 26.5 GHz 26.5 - 50 GHz
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O-Ring
Abstract: No abstract text available
Text: ADAPTERS, In-Series 1.85mm, DC - 65 GHz, Bulkhead Mount SPECIFICATIONS: Models: 5289, 5290 Electrical: DC - 65 GHz Typical performance 1.6:1 1.25:1 Max. 1.35:1 Max. 1.40:1 Max. 50 Ohms -65°C to +125°C 1.5:1 1.4:1 VSWR Frequency Range VSWR DC - 26.5 GHz 26.5 - 50 GHz
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O-Ring
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Untitled
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Text: Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead Pb Free Product - RoHS Compliant BPX 65 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • BPX 65: Hohe Fotoempfindlichkeit • Hermetisch dichte Metallbauform (TO-18),
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BLS3135-65
Abstract: MCD750
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D259 BLS3135-65 Microwave power transistor Product specification Supersedes data of 1999 May 01 1999 Aug 16 Philips Semiconductors Product specification Microwave power transistor BLS3135-65 FEATURES PINNING - SOT422A
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M3D259
BLS3135-65
OT422A
125002/02/pp12
BLS3135-65
MCD750
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MARKING MY
Abstract: OLS-330 OLS330 opto 710 3065 710 opto
Text: OSA Opto Light GmbH Köpenicker Str. 325 / Haus 201 12555 Berlin - Germany Tel. +49 0 30 65 76 26 83 Fax: +49 (0)30 65 76 26 81 E-Mail: [email protected] preliminary Series 330 - 1206 with Lens thin film technology Features - with lens, mounting from backside of PCB
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ols-330 EG525
Abstract: OLS-330
Text: OSA Opto Light GmbH Köpenicker Str. 325 / Haus 201 12555 Berlin - Germany Tel. +49 0 30 65 76 26 83 Fax: +49 (0)30 65 76 26 81 E-Mail: [email protected] preliminary Series 330 - 1206 with Lens thin film technology Features - with lens, mounting from backside of PCB
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Abstract: No abstract text available
Text: HI5865 Semiconductor PRELIMINARY 12-Bit, 65 MSPS A/D Converter June 1998 Description Features Sampling R a te . 65 MSPS The HI5865 is a monolithic, 12-bit, 65 MSPS Analog-toDigital C onverter fabricated in an advanced CMOS
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HI5865
12-Bit,
HI5865
250MHz
450mW
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Untitled
Abstract: No abstract text available
Text: HI5865 Semiconductor PRELIMINARY 12-Bit, 65 MSPS A/D Converter June 1998 Features Description • Sampling R a t e .65 MSPS The HI5865 is a monolithic, 12-bit, 65 MSPS Analog-toDigital Converter fabricated in an advanced CMOS
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HI5865
12-Bit,
HI5865
250MHz
5M-1982.
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dp8465
Abstract: DP8455
Text: DP8461/65/DP8451 /55 2 National Semiconductor DP8461/65 Data Separator DP8451/55 Data Synchronizer General Description DP8461/65 The DP8461 /6 5 Data Separators are designed for applica tions in disk drive memory systems, and depending on sys tem requirements, may be located either in the drive or in
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DP8461/65/DP8451
DP8461/65
DP8451/55
DP8461
DP8465
DPB464
ST506
DP8461/65/DP8451/55
DP8461V
DP8455
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silizium-PIN-Fotodiode Silicon PIN Photodiode BPX 65 BPX 66 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • BPX 65: Hohe Fotoempfindlichkeit
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0535bD5
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converter ttl to 1vpp output
Abstract: No abstract text available
Text: ANALOG ► DEVICES 10-Bit, 65/80/105 WISPS 3V A/D Converter Prelim inary Technical Data 9/28/99 AD9214 FEATURES 10-Bit, 65, 80, and 105 Msps ADC Low Power: - 170 mW at 65 Msps with Fin = 10.3 MHz - 250 mW at 105 Msps with Fin = 10.3 MHz On-Chip Reference and Track/Hold
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10-Bit,
AD9214
41MHz
AD9214
10-bit
AD9214.
00LSS7S
converter ttl to 1vpp output
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