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    651 DIODE Search Results

    651 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    651 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PI74FCT646T

    Abstract: PI74FCT648T
    Text: PI74FCT646/648/651/652T 25Ω Ω Series P174FCT2646T/2652T OCTAL REGISTERED TRANSCEIVERS PI74FCT646T/648T/651T/652T


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    PDF PI74FCT646/648/651/652T P174FCT2646T/2652T PI74FCT646T/648T/651T/652T PI74FCT2646T/2652T PI74FCT646T/648T/651T/652T/2646T/2652T PS2022A PI74FCT646T PI74FCT648T

    HP5082-2835

    Abstract: OPA650 OPA651 OPA651P OPA651PB OPA651U OPA651UB PDS-1265A 11PA
    Text: OPA OPA651 651 OPA 651 Wideband, Low Power Voltage Feedback OPERATIONAL AMPLIFIER FEATURES ● ● ● ● STABLE IN GAINS: ≥ 2V/V LOW POWER: 50mW GAIN-BANDWIDTH: 940MHz at G = 2 FAST SETTLING TIME: 16ns to 0.01% ● LOW HARMONICS: –78dB at 5MHz ● LOW INPUT BIAS CURRENT: 4µA


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    PDF OPA651 940MHz OPA651 470MHz 12-bit exce054 HP5082-2835 OPA650 OPA651P OPA651PB OPA651U OPA651UB PDS-1265A 11PA

    8D649

    Abstract: 8D648 BD646
    Text: K MAGNA Yffiffi 8D645; 647 BD6a9; 651 SILICONDARLINGTON POWERTRANSISTORS N-P-Nepitaxialbasetransistorsin monolithic Darlingtoncircuit for audiooutput stagesand general amplifierand switchingapplications;fO-22Oplasticenvelope. P-N-Pcomplements are BD646,8D648,


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    PDF 8D645; O-22O BD646 8D648, 8D649 LE50t 8D648

    Untitled

    Abstract: No abstract text available
    Text: FEATURES PROFESSIONAL LED INDICATORS Ø12.7mm Mounting Black anodised aluminium housing 651 SERIES PACK QUANTITY = 10 PIECES Excellent wide viewing angle characteristics Sealed to IP67 Suitable for high vibration applications Internal reverse protection diode fitted as standard in all


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    PDF STA1-22 24Vdc 230Vac

    Untitled

    Abstract: No abstract text available
    Text: FEATURES PROFESSIONAL LED INDICATORS Ø12.7mm Mounting Black anodised aluminium housing 651 SERIES PACK QUANTITY = 10 PIECES Excellent wide viewing angle characteristics Sealed to IP67 Suitable for high vibration applications Internal reverse protection diode fitted as standard in all


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    PDF 01-651-114-2may

    651-114-23

    Abstract: A 651 colour code diode
    Text: FEATURES PROFESSIONAL LED INDICATORS Ø12.7mm Mounting Black anodised aluminium housing 651 SERIES PACK QUANTITY = 10 PIECES Excellent wide viewing angle characteristics Sealed to IP67 Suitable for high vibration applications Internal reverse protection diode fitted as standard in all


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    PDF 150mm 1000mm 651-114-23 A 651 colour code diode

    Untitled

    Abstract: No abstract text available
    Text: 651 RS series features • Ø12.7mm mounting • Black anodised aluminium housing • Colour diffused lens with a wide viewing angle • Sealed to IP67 • Suitable for high vibration applications • Internal reverse protection diode fitted as standard in all voltage models


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: 651 RS series features • Ø12.7mm mounting • Black anodised aluminium housing • Colour diffused lens with a wide viewing angle • Sealed to IP67 • Suitable for high vibration applications • Internal reverse protection diode fitted as standard in all voltage models


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    ir 035

    Abstract: MCT2201
    Text: Issued March 1997 232-5626 Data Pack F Transistor opto-isolator Data Sheet Device Transistor output opto-isolator MCT2201 RS stock no. 651-945 MCT2201 The MCT2201 is an opto-isolator with phototransistor output. A gallium arsenide infra-red emitting diode is


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    PDF MCT2201 MCT2201 1507C 10sec) 260mW 100x1 ir 035

    Untitled

    Abstract: No abstract text available
    Text: 651 RS series features • Ø12.7mm mounting • Black anodised aluminium housing • Colour diffused lens with a wide viewing angle • Sealed to IP67 • Suitable for high vibration applications • Internal reverse protection diode fitted as standard in all voltage models


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: 651 series features • Black anodised aluminium housing • Colour diffused lens with a wide viewing angle • Sealed to IP67 • Suitable for high vibration applications • Internal reverse protection diode fitted as standard in all voltage models • Pack Quantity = 10 Pieces


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    r03003

    Abstract: MPS-202201-71 MPS-202201 mps2022
    Text: MPS-202201 -71 100 TO 2000 MHz GaAs FET AMPLIFIER 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 MICROWAVE TECHNOLOGY !•—H 098 FEATURES -1 -n*> a5 25 I I I / “ 2- PL +34 dBm TYPICAL IP3 +22 dBm TYPICAL P1dB (654)


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    PDF MPS-202201 MPS-202201-71 R0-3003 PS-202201-71-2 r03003 mps2022

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MPS-252708-85 1.7 TO 2.5 GHz SELF-BIASED GaAs FET AMPLIFIER MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • +41 dBm TYPICAL IP3 +27.5 dBm TYPICAL P1dB 11.5 dB TYPICAL GAIN +12 VOLT OPERATION HIGH POWER ADDED EFFICIENCY


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    PDF MPS-252708-85 MPS-252708-85

    RO3003

    Abstract: mps2024
    Text: MPS-202409-85 500 TO 2000 MHz SELF-BIASED GaAs FET AMPLIFIER 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 MICROWAVE TECHNOLOGY oeo_| D im ensions in inches FEATURES 1-52 and (mm) INPUT'* • +36 dBm TYPICAL IP3 IT • +24 dBm TYPICAL P1dB


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    PDF MPS-202409-85 MPS-202409-85 RO3003 mps2024

    mps2524

    Abstract: No abstract text available
    Text: PRELIMINARY MPS-252409-85 1.7 TO 2.5 GHz SELF-BIASED GaAs FET AMPLIFIER MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • +38 dBm TYPICAL IP3 • +24 dBm TYPICAL P1dB • 11 dB TYPICAL GAIN • +10.0 VOLT OPERATION


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    PDF MPS-252409-85 MPS-252409-85 RO-3003 135mA mps2524

    mps 940

    Abstract: R03003
    Text: UN-RELEASED PRELIMINARY MPS-093011-85 860 TO 940 MHz SELF-BIASED GaAs FET AMPLIFIER MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 F A X 510-651-2208 FEATURES • +45 dBm TYPICAL IP3 • +30 dBm TYPICAL P1dB • 17 dB TYPICAL POWER GAIN


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    PDF MPS-093011-85 MPS-093011-85 R0-3003 mps 940 R03003

    mps2027

    Abstract: MPS-202708-85
    Text: PRELIMINARY MPS-202708-85 500 TO 2000 MHz SELF-BIASED GaAs FET AMPLIFIER MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • +39 dBm TYPICAL IP3 • +27.0 dBm TYPICAL P1dB • 10.5 dB TYPICAL GAIN • +12 VOLT OPERATION


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    PDF MPS-202708-85 MPS-202708-85 MPS-202706-3S mps2027

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MPS-202708-85 500 TO 2000 MHz SELF-BIASED GaAs FET AMPLIFIER MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • +39 dBm TYPICAL IP3 • +27.0 dBm TYPICAL P1dB • 10.5 dB TYPICAL GAIN • +12 VOLT OPERATION


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    PDF MPS-202708-85 MPS-202708-85 bl241GG

    r03003

    Abstract: No abstract text available
    Text: UN-RELEASED PRELIMINARY 2 i LA MPS-253011-85 TTT MICROWAVE TECHNOLOGY 2.4 TO 2.5 GHz SELF-BIASED GaAs FET AMPLIFIER_ 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • +45 dBm TYPICAL IP3 • +30 dBm TYPICAL P1dB • 12.5 dB TYPICAL POWER GAIN


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    PDF MPS-253011-85 MPS-253011-85 R0-3003 PS-253011-85 r03003

    mps2522

    Abstract: No abstract text available
    Text: PRELIMINARY MPS-252201-81 S T Ì m 1.7 TO 2.5 GHz GaAs FET AMPLIFIER 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 MICROWAVE TECHNOLOGY i . h .096 _ o 2.5 FEATURES .063 2-PL .25 +35 dBm TYPICAL IP3 1.6 ) (6.42 +22 dBm TYPICAL P1dB


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    PDF MPS-252201-81 MPS-252201-81 R0-3003 MPS-252201 mps2522

    Untitled

    Abstract: No abstract text available
    Text: 11 PRELIMINARY MPS-252201-81 ñ f í 1.7 TO 2.5 GHz GaAs FET AMPLIFIER ¡ 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 MICROWAVE TECHNOLOGY U— 008 - n B 2-5 25 FEATURES .063 2-PL +35 dBm TYPICAL IP3 (6.4^ .25 <6.4)


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    PDF MPS-252201-81 MPS-252201-81 R0-3003 00004b7

    Untitled

    Abstract: No abstract text available
    Text: Si i PRELIMINARY MPS-302201 -87 r r 100 TO 3000 MHz GaAs FET AMPLIFIER kJ. MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 F A X 510-651-2208 FEATURES I MPS302201-87 • +34 dBm TYPICAL IP3 0.0151 TYP. 0.18- SQ. RF IN I RF OUT • +22 dBm TYPICAL P1dB


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    PDF MPS-302201 MPS302201-87 MPS-302201-87 R0-3003 MP8-302201

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MPS-252409-85 1.7 TO 2.5 GHz SELF-BIASED GaAs FET AMPLIFIER MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES .0 6 0 . 1 52 DkTwwon« tn inches and (mm) INPUT- Li ,130 OIA. P-SO) OUTPUT- i^ _ n • +38 dBm TYPICAL IP3


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    PDF MPS-252409-85 MPS-252409-85 RO-3003

    Untitled

    Abstract: No abstract text available
    Text: SF MICROWAVE TECHNOLOGY MPS-202201-71 100 TO 2000 MHz GaAs FET AMPLIFIER 4268 Solar Way Fremont, CA 94538 510-651-6700 F A X 510-651-2208 FEATURES • +22 dBm TYPICAL P1dB • 9.5 dB TYPICAL GAIN • +5 VOLT VDS • +35 dBm THIRD ORDER INTERCEPT • 2:1 MAXIMUM INPUT/OUTPUT VSWR


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    PDF MPS-202201-71 PS-202201-71