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    6515 TRANSISTOR Search Results

    6515 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    6515 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n6520

    Abstract: 2N6517 2N6515 2N6517 MOTOROLA 2N6519 transistors aio 20
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN NPN 2N 6515 2N6517 PNP 2N 6519 2N652Ö PNP EMITTER EMITTER MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage 2N6515 2N6517 2N6520 2N6519 v CEO 250 300 350 Vdc Collector-Base Voltage VCBO


    OCR Scan     		PDF 2N6517 2N652Ö 2N6515 2N6519 2N6520 2N6515, 2N6516, 2N6519, 2N6517 MOTOROLA transistors aio 20

    Untitled

    Abstract: No abstract text available
    Text: í w MPS 6512 thru’ MPS 6515 r NPN SILICON PLANAR EPITAXIAL TRANSISTORS CASE T0-92A MPS6512 th ru1 MPS6515 are NPN silicon planar epitaxial transistors designed for general purpose amplifier applications and for com­ plementary circuitry. EBC ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF T0-92A MPS6512 MPS6515 MPS6512/3 MPS6512/3 MPS6514/5 MPS6512 100mA 350mW

    2n6520

    Abstract: 2N6517 bc250 2n6519
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN NPN 2N 6515 2N 6517 PNP 2N 6519 2N 6520 PNP EMITTER EMITTER MAXIMUM RATINGS Rating Symbol 2N6515 2N6519 2N6517 2N6520 C oilector-E m itter Voltage v CEO 250 300 350 Vdc C ollector-B ase Voltage


    OCR Scan     		PDF 2N6515, 2N6516, 2N6517 2N6519, 2N6520 2N6515 2N6519 2N6520 1/2MSD7000 bc250 2n6519

    MPS6514

    Abstract: MPS6512 MPS 6512 WBSF
    Text: ? :V ^ J ¥à •4 •> -' ■- <¿ MPS 6512 thru’ MPS 6515 âsi;ÿ NPN SILICON PLANAR EPITAXIAL TRANSISTORS là ' ' n i - CASE TO-92A MPS6512 thru' MPS6515 are NPN silicon planar epitaxial transistors designed for general purpose amplifier applications and for com­


    OCR Scan     		PDF MPS65I2 MPS65I5 T0-92A MPS6512/3 MPS6514/5 100mA 350mW MPS6514 MPS6512 MPS 6512 WBSF

    mps6514

    Abstract: No abstract text available
    Text: b^E ]> • bb53T31 Q Q S T T n A2T MPS6513 MPS6514 MPS6515 APX N AUER PHILIPS/DISCRETE V. AMPLIFIER TRANSISTOR General purpose n-p-n transistors in TO-92 envelopes. The complementary types are MPS6517 to MPS6519. QUICK REFERENCE DATA MPS6513 6514 6515 VCEO


    OCR Scan     		PDF bb53T31 MPS6513 MPS6514 MPS6515 MPS6517 MPS6519. NECC-C-002 mps6514

    MPS6513

    Abstract: LG IC 621 MPS65 MPS6514 MPS6515 MPS6517 MPS6519 6515 transistor 5bti T2721
    Text: MPS6513 MPS6514 MPS65Ì5_ PHILIPS 7 1 1 0 ô 2 t 0 0 4 2 4 ^ 0 323 « P H I N INTERNATIONAL AMPLIFIER TRANSISTOR T - 2 7 - Z / General purpose n-p-n transistors in TO-92 envelopes. The complementary types are MPS6517 to MPS6519. QUICK REFERENCE DA TA MPS6513


    OCR Scan     		PDF MPS6513 MPS6514 MPS65Ã 711002t T-27-Z/ MPS6517 MPS6519. NECC-C-002 LG IC 621 MPS65 MPS6515 MPS6519 6515 transistor 5bti T2721

    mps6513 TRANSISTOR

    Abstract: 6514 TRANSISTOR MPS6513 MPS6514 MPS6515 MPS6517 MPS6519 6514 mi 6514
    Text: b'îE ]> • bbSB'ìai QQST'ìTì ÔET MPS6513 MPS6514 MPS6515 IAPX N AUER PHILIPS/DISCRETE AMPLIFIER TRANSISTOR General purpose n-p-n transistors in TO -92 envelopes. T he co m p le m e nta ry types are M PS6517 to MPS6519. Q U IC K R E F E R E N C E D A T A


    OCR Scan     		PDF MPS6513 MPS6514 MPS6515 MPS6517 MPS6519. 100mA NECC-C-002 mps6513 TRANSISTOR 6514 TRANSISTOR MPS6515 MPS6519 6514 mi 6514

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS AKTIENGESELLSCHAF LOE ]> • 023SbOS G D S m ? S M7D I1SIE6 SIEMENS Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Characteristics TA = 25° C Maximum Ratings E mW 9m mS 70 180 40 ¿> P o Type 70 180 40 -3.0.0 60 180 50 70 200 40


    OCR Scan     		PDF 023SbOS CGY50 OT-143 CGY40 CLY10 CGY52

    Untitled

    Abstract: No abstract text available
    Text: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO -92 • C ollector-E m itter Voltage: V Ceo = 3 5 0 V • C ollecto r D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic C ollector-B ase Voltage C ollector-E m itter Voltage


    OCR Scan     		PDF 2N6517

    2N6515

    Abstract: 2N6517 250V 100MA NPN
    Text: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • C ollector-E m itter Voltage: V C e o = 3 5 0 V • C ollector Dissipation: P c m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol C ollector-Base Voltage C ollector-E m itter Voltage


    OCR Scan     		PDF 2N6517 625mW 2N6515 100HA, 100mA, 300ns, 2N6517 250V 100MA NPN

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR 2N6516 HIGH VOLTAGE TRANSISTOR TO -92 • C ollector-E m itter Voltage: V Ceo = 3 0 0 V • C ollecto r D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) Characteristic C ollector-B ase Voltage C ollector-E m itter Voltage


    OCR Scan     		PDF 2N6516

    2N661

    Abstract: 2n6617
    Text: MAXIMUM RATINGS 2N6516 Rating NPN 2N6517 Symbol 2N6515 2N6519 2N6520 U n it C o lle ctor-E m itte r V olta g e VCEO 250 300 350 V dc C o lle cto r-B ase V olta g e CCBO 250 300 350 Vdc Em itte r-B a se V olta g e 2N6515, 2N6516. 2N6517 2N6519, 2N6520 Veb o


    OCR Scan     		PDF 2N6516 2N6517 2N6515, 2N6516. 2N6519, 2N6520 2N6515 2N6519 2N6520 2N661 2n6617

    2N6515

    Abstract: 2N6517
    Text: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • C ollecto r-E m itte r V oltage: V Ceo = 3 5 0 V • C o llecto r D issipation: Pc m a x =62 5 m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic C ollector-B ase V oltage C ollecto r-E m itte r V oltage


    OCR Scan     		PDF 2N6517 625mW 2N6515 100HA, 100mA, 300ns, 2N6517

    2N6515

    Abstract: 2N6516
    Text: NPN EPITAXIAL SILICON TRANSISTOR 2N6516 HIGH VOLTAGE TRANSISTOR TO -92 • C ollector-E m itter Voltage: V Ce o = 3 0 0 V • C ollector Dissipation: P c m ax =625m W ABSOLUTE MAXIMUM RATINGS (T a=25°C) C haracteristic Symbol C ollector-Base Voltage C ollector-E m itter Voltage


    OCR Scan     		PDF 2N6516 625mW 2N6515 100HA, 100mA, 300ns, 2N6516

    BD53A

    Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
    Text: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623


    OCR Scan     		PDF OT-23 KSC2223 KSC2715 KSC1623 KSC2715 KSC1674 BD53A KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10

    MMBT3414

    Abstract: MMBT3946 MMBT5135 MMBT101 mmbt mmbt2221 MMBT3642 MMBT5223 MMBT100 MMBT100A
    Text: This Surface Mount Devices NATL Surface Mount Transistors General Purpose Amplifiers and Switches—NPN Type No. Case Style VßE SAT Cob •oil NF VCBO VCEO Vebo >CBO Test Process tire @ •c & V CE VB(SAT) Vcb (MHz) ■c (ns) (dB) (V) @ >C (PF) (V) (V)


    OCR Scan     		PDF bS01130 T-35-OÃ T-35-01 MMBT3414 MMBT3946 MMBT5135 MMBT101 mmbt mmbt2221 MMBT3642 MMBT5223 MMBT100 MMBT100A

    MMBT3946

    Abstract: MMBT3415 MMBTA20
    Text: Surface Mount Devices National Semiconductor Surface Mount Transistors CO m t-4 O O 2 General Purpose Amplifiers and Switches—NPN C a se Style VCBO V Min VCEO (V) Min VEBO (V) Min TO-236 (49) 75 45 6 MMBT100A TO-236 (49) 75 45 6 50 60 300 100 220 MMBT101


    OCR Scan     		PDF MMBT100 O-236 S33jA3Q MMBT3946 MMBT3415 MMBTA20

    Untitled

    Abstract: No abstract text available
    Text: MAXIMUM RATINGS NPN Symbol 2N6515 2N6516 2N6519 2N6517 2N6520 C o llector-E m itter Voltage Vc e O 250 300 350 Vdc Collector-Base Voltage CcBO 250 300 350 Vdc Em itter-Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 v EBO Rating U n it 2N6515 thru 2N6517*


    OCR Scan     		PDF 2N6515, 2N6516, 2N6517 2N6519, 2N6520 2N6515 2N6516 2N6519

    2sc 9015

    Abstract: 2SC644 CS9015 2N4248 scr 4059 transistor MPS 6518 mpsa09 2SC923 2N3550 2SC644 transistor
    Text: 7 -. SEMICONDUCTORS INC OIE I | SlBktSO 0000275 1 | ¿Lf-/? TYPE NO. ; POLARITY 1 Audio Frequency Small Signal Transistors MAXIMUM RATINGS CASE HFE Pd mW) >C (mA) VCEO (V) min max •c (mA) VCE (V) VCE(SAT) max ■c (V) (mA) fT min (MHz) Cob max (pF) 5+


    OCR Scan     		PDF BCW86 O-92F BCY56 BCY57 BCY58 BCY59 2sc 9015 2SC644 CS9015 2N4248 scr 4059 transistor MPS 6518 mpsa09 2SC923 2N3550 2SC644 transistor

    2SC3133 cross reference

    Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
    Text: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905


    OCR Scan     		PDF 2N4401 2N5401 2N5551 2SA1004 2SA1010 2SA1013 2SA1015 2SA1016 2SA1017 2SA1019 2SC3133 cross reference Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288

    2sc 9015

    Abstract: 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a
    Text: BC BC BC BC BC 132 153 154 167 168 107 108 109 113 114 Z Z Z Z Z Z Z -0 -0 z Z Z Z Z Z TO-106 TO-92F TO-92B TO-92F TO-92B 901-01 90101 901-01 901-01 901-01 TO-92F TO-92B TO-92F TO-92B TO-18 TO-18 TO-18 TO-18 TO-92F TO-92B 3 3 3 3 â <b <b <b cb b M IO M tO K


    OCR Scan     		PDF BC107 O-106 O-92B -26UNF-2A O-48D 2sc 9015 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a

    117L7

    Abstract: 2e22 6JV6 6BM8 12EC8 6au5gt 6HF5 6GH8A 6HB5 12U7
    Text: TUNS-SOL TECHNICAL DATA TUNG-SOL ELECTRON TUBES TUNG-SOL ELECTRIC INC. ELEC TR O N T U B E DIVISIO N NEW ARK, N. }. U. S. A. PL ATE 275r OCT. 1 1951 C O P Y R IG H T 1 9 0 1 BY T U N O - S O L E L EC TR IC IN C . E L E C T R O N IC T U B E D IV ISIO N N E W A R K . N E W J E R S E Y . U . S. A.


    OCR Scan     		PDF 19JN8 19JN8 117L7 2e22 6JV6 6BM8 12EC8 6au5gt 6HF5 6GH8A 6HB5 12U7

    ZN 3055 transistor

    Abstract: Transistor w1l 7805 TO-220 V7233 5241E V7331 V5237B V-5240-k mk 5373 V7622
    Text: ASSMANN Technical Data & Abbreviations Electronic C om ponen ts Al Surface nature AI203 Aluminiumoxyd Al Mg Si 0,5 Special aluminium alloy {extruded Al 99,5 Special aluminium alloy band) GD-AI Si 12 Special aluminium alloy (Die-cast) BeO Berylliumoxyd K


    OCR Scan     		PDF AI203 OT-32, O-126) O-220 O-220, ZN 3055 transistor Transistor w1l 7805 TO-220 V7233 5241E V7331 V5237B V-5240-k mk 5373 V7622

    TFK diodes BYW 76

    Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
    Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35


    OCR Scan     		PDF