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    6561 IC Search Results

    6561 IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    6561 IC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    779157-01

    Abstract: SHB12X-B12X 192344-01 PXI-6561 SMA-2164 PXI-6562 779323-01 77915701 0/Optical 12x DDR Infiniband 6562
    Text: 400 and 200 Mb/s LVDS Digital Waveform Generator/Analyzers NEW NI PXI-6562, NI PXI-6561 • 400 Mb/s PXI-6562 or 200 Mb/s (PXI-6561) maximum data rate in double data rate (DDR) mode • 200 MHz (PXI-6562) or 100 MHz (PXI-6561) maximum clock rate • LVDS signaling for fast clock rates


    Original     		PXI-6562, PXI-6561 PXI-6562) PXI-6561) 2000/NT/XP 779157-01 SHB12X-B12X 192344-01 PXI-6561 SMA-2164 PXI-6562 779323-01 77915701 0/Optical 12x DDR Infiniband 6562 PDF

    HM1-6561

    Abstract: 6561/883
    Text: HM-6561/883 S E M I C O N D U C T O R 256 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated


    Original     		HM-6561/883 MIL-STD883 HM-6561/883 20mW/MHz 200ns 100kHz 300oC HM1-6561 6561/883 PDF

    HM1-6561

    Abstract: No abstract text available
    Text: HM-6561/883 256 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous


    Original     		HM-6561/883 MIL-STD883 HM-6561/883 20mW/MHz 200ns HM1-6561 PDF

    6561

    Abstract: HM1-6561-9 6561-9 HM-6561-9 HM1-6561 HM1-6561B-9 HM-6561 HM-6561B-9 L 6561 32 x 32 matrix
    Text: HM-6561 256 x 4 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max The HM-6561 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation.


    Original     		HM-6561 HM-6561 20mW/MHz 200ns 6561 HM1-6561-9 6561-9 HM-6561-9 HM1-6561 HM1-6561B-9 HM-6561B-9 L 6561 32 x 32 matrix PDF

    6561B

    Abstract: Intersil 6561/883 6561
    Text: HM-6561/883 TM 256 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit


    Original     		HM-6561/883 MIL-STD883 HM-6561/883 20mW/MHz 200ns 6561B Intersil 6561/883 6561 PDF

    6561

    Abstract: HM1-6561-9 HM1-6561B-9 HM-6561 HM-6561-9 HM-6561B-9 HM165619
    Text: HM-6561 TM 256 x 4 CMOS RAM March 1997 Features Description • Low Power Standby. . . . . . . . . . . . . . . . . . . . 50µW Max The HM-6561 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation.


    Original     		HM-6561 HM-6561 20mW/MHz 200ns 6561 HM1-6561-9 HM1-6561B-9 HM-6561-9 HM-6561B-9 HM165619 PDF

    HM1-6561-9

    Abstract: HM1-6561B-9 HM-6561-9 HM-6561 HM-6561B-9 hM1-6561
    Text: HM-6561 S E M I C O N D U C T O R 256 x 4 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max The HM-6561 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation.


    Original     		HM-6561 HM-6561 20mW/MHz 200ns HM1-6561-9 HM1-6561B-9 HM-6561-9 HM-6561B-9 hM1-6561 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM-6561 Semiconductor 256 x 4 CMOS RAM March 1997 Features Description • Low Power Standby. 50^W Max The HM-6561 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous cir­


    OCR Scan     		HM-6561 HM-6561 20mW/MHz 200ns PDF

    6561

    Abstract: 6561 IC
    Text: HM-6561 HARRIS S E M I C O N D U C T O R 256 x 4 CMOS RAM March 1997 Features Description • Low Power Standby. 50|iW Max The HM-6561 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous cir­


    OCR Scan     		HM-6561 HM-6561 6561 6561 IC PDF

    Untitled

    Abstract: No abstract text available
    Text: HM-6561/883 Semiconductor 256 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous


    OCR Scan     		HM-6561/883 HM-6561/883 100kHz PDF

    HM3-6561-9

    Abstract: HM3-6561B-9 hm1-6561b/883
    Text: f f t H A R R HM-6561 I S S E M I C O N D U C T O R 256 X 4 CMOS RAM February 1992 Features Description • Low Power Standby. 50|iW Max. The HM-6561 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design


    OCR Scan     		HM-6561 HM-6561 20mW/MHz 200ns HM3-6561-9 HM3-6561B-9 hm1-6561b/883 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM-6561/883 HARRIS S E M I C O N D U C T O R 256 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated


    OCR Scan     		HM-6561/883 MIL-STD883 HM-6561/883 200ns 100kHz PDF

    Untitled

    Abstract: No abstract text available
    Text: cm H A R R HM-6561/883 IS S E M I C O N D U C T O R 256 x 4 CMOS RAM February 1992 Features Description • This Circuit is Processed in Accordance to Mil-Std883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated


    OCR Scan     		HM-6561/883 Mil-Std883 HM-6561/883 MIL-M-38510 MIL-STD-1835, GDIP1-T18 HHW561/883 PDF

    MPS6560

    Abstract: MPS6563 MPS6562 MPS6565 TA425 MPS 6561 MPS-6565
    Text: MPS 6561 • MPS 6563 COMPLEMENTARY SILICON AP MEDIUM POWER TRANSISTORS CASE T0-92A THE MPS656O, MPS656I NFN AND MPS6562, MPS6563 (PNP) ARE SILICON PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR COMPLEMENTARY SYMMETRY AUDIO OUTPUT APPLICATIONS. THEY FEATURE LOW COLLECTOR TO


    OCR Scan     		mps656o, mps656i mps6562, mps6563 500mA) TA425Â T0-92A MPS6560 MPS656l MPS6562 MPS6563 MPS6565 TA425 MPS 6561 MPS-6565 PDF

    MPS6563

    Abstract: No abstract text available
    Text: MPS 6560 • MPS 6562 MPS 6561 - MPS 6563 COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS CASE T0-92A THE MPS656 O, MPS 656 I NFN AND MPS6562 , MPS6563 (PNP) ARE SILICON PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR COMPLEMENTARY SYMMETRY AUDIO OUTPUT APPLICATIONS. THEY FEATURE LOW COLLECTOR TO


    OCR Scan     		T0-92A MPS656 MPS6562 MPS6563 500mA) MPS6561Ã MPS6560 MPS6562 MPS6563 100mA PDF

    MPS6562

    Abstract: MPS6563 MPS6560 MPS6565 TA425 T0-92A
    Text: *V MPS 6560 - MPS 6562 M PS 6561 - MPS 6563 COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS CASE T0-92A THE MPS6560, MPS656I NFN AND MPS6562, MPS6563 (PNP) ARE SILICON PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR COMPLEMENTARY SYMMETRY AUDIO OUTPUT APPLICATIONS. THEY FEATURE LOW COLLECTOR TO


    OCR Scan     		MPS656O, MPS656I MPS6562, MPS6563 500mA) TA425Â T0-92A MPS6560 MPS6562 MPS656l MPS6563 MPS6565 TA425 PDF

    TEA 5560

    Abstract: TA5561 5561 5560 C15-1 L 6561 318s 67376-2
    Text: 64-Bit 16 x 4 Random Access M em ory 5560/ 6560, 5561/6561 Features/B enefits • • • • • • Selection Gui Advanced Schottky processing. Low input current (250 /xA m axim um ). Data outputs are off during a write cycle. Fully decoded and TTL compatible.


    OCR Scan     		64-Bit J167TÃ TEA 5560 TA5561 5561 5560 C15-1 L 6561 318s 67376-2 PDF

    ax3003

    Abstract: No abstract text available
    Text: HM -6561 23 HARRIS 256 x 4 CMOS RAM Features • • • • • • • • • • • • Pinout HM-6100 Com patible Low Standby P o w e Max. Low Operating P o w e r. 20mW/MHz Max.


    OCR Scan     		HM-6100 20mW/MHz 220ns ax3003 PDF

    HM-6561-5

    Abstract: No abstract text available
    Text: Specifications HM-6561-5 ABSOLUTE M A XIM U M RATINGS OPERATING RANGE Supply Voltage - VCC - G N D -0 .3 V to +8.0V A pplied In p u t or O u tp u t Voltage (G N D -0 .3 V ) to (VCC + 0.3V ) -650C t o +1500C Storage Temperature Operating Supply V oltage -V C C


    OCR Scan     		HM-6561-5 -650C HM-6561-5 PDF

    b09 n03

    Abstract: RTU A08 b04 n03 A09 N03 RTU A01 1553 bus controller b04 n06 a13 trans a06 n03
    Text: 000 BUS-65612 ILC DATA DEVICE CORPORATION«_ _ MIL-STD-1553 BUS CONTROLLER REMOTE TERMINAL CONTACTFACTORY AND BUS MONITOR FOR MORE INFORMATION FEATURES DESCRIPTION The B U S -6561 2isa 16M H z single chip dual re dund ant M IL-S TD -1553 Bus Controller BC , Remote Terminal Unit


    OCR Scan     		BUS-65612 MIL-STD-1553 BUS-65612 BUS-63125, BUS-65600 BUS-65612-883B MIL-STD-883. b09 n03 RTU A08 b04 n03 A09 N03 RTU A01 1553 bus controller b04 n06 a13 trans a06 n03 PDF

    6562

    Abstract: HM-6562 HM-6641 HWI-6562 HM-6611 HM-6561 HM-6661 6562 s harris 6562
    Text: HARRIS HM-6562 SEM ICO NDUCTOR P R O D U C T S DIVISI ON A DIVISION OF HARRIS CORPORATION 256 <4 C M O S R A M NOT RECOMMENDED FOR NEW DESIGNS SEE HM-6561 Pinout Features LOW POWER STANDBY LOW POWER OPERATION FAST ACCESS TIME D A T A R ETENTIO N VOLTAG E T T L COMPATIBLE IN /O U T


    OCR Scan     		HM-6561 HM-6562 20mW/MHz 220nsec HWI-6562 HM-6611 HM-6641 HM-6661 6562 HM-6562 HM-6641 HM-6611 HM-6561 HM-6661 6562 s harris 6562 PDF

    HM3-6561-9

    Abstract: HM3-6561 6561B-9 HM1-6561883 hm-6561 HM36561B-9 HM3-65619 6561-9
    Text: ÎH H A J R R IS U S E M I C O N D U C T O R U HM-6561 256 February 1992 Features • X 4 CMOS RAM Description Low Power Standby. 50pWMax. • Low Power O peration.20mW/MHz Max. • Fast Access Time. 200ns Max.


    OCR Scan     		HM-6561 HM-6561 HM3-6561-9 HM3-6561 6561B-9 HM1-6561883 HM36561B-9 HM3-65619 6561-9 PDF

    ic 358s

    Abstract: 358s ic+358s 1358S I358S
    Text: ANI 358 AN6562 ANI 358S (AN6562S) .AN6561 OPERATIONAL AMPLIFIERS AN1 358 (AN6562), AN1 358S (AN6562S) ,AN6561 Dual Operational Amplifiers • Outline T h e A N 1358 (A N 6562), the A N 1358S (A N 6562S) and the AN 6561 are dual operational am p lifiers w ith phase com p en sa­


    OCR Scan     		AN6562) AN6562S) AN6561 1358S 6562S) ic 358s 358s ic+358s 1358S I358S PDF

    Untitled

    Abstract: No abstract text available
    Text: 33 HM-6561/883 256 February 1992 4 CMOS RAM Description Features • X T h e H M -65 6 1 /8 83 is a 2 5 6 x 4 static C M O S RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high per­


    OCR Scan     		HM-6561/883 MIL-M-38510 MIL-STD-1835, GDIP1-T18 HM-6561/883 PDF