Untitled
Abstract: No abstract text available
Text: WJA1035 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • • Cascadable gain block 50 – 4000 MHz 15 dB Gain @ 1.9GHz +16.5 dBm P1dB @ 1.9GHz +35 dBm OIP3 @ 1.9GHz Operates from +5V @ 65mA • • • • Wireless Infrastructure
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WJA1035
WJA1035
OT-89
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBC2518T681K Features Item Summary 680 H(±10%), 65mA, 60mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
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CBC2518T681K
2000pcs
796MHz
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7segments
Abstract: IES5505 IES5501 IES5508 drive 7segments IES5507 IES5515 5508C 7 segment display driver
Text: IES5508 65mA 8-bit 2-wire Bus Output Port 1 3 FEATURES • 8 individually selectable open drain output ports The IES5508 is a monolithic CMOS integrated circuit for general purpose output drive configurable from a 2-wire bus interface including I2C-bus, SMBus, PMbus, and
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IES5508
IES5508
500mA
4000pF)
7segments
IES5505
IES5501
drive 7segments
IES5507
IES5515
5508C
7 segment display driver
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14164 1994
Abstract: ERA-51SM 358-type 419V
Text: ERA-51SM Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: ERA-51SM Reference Data: RDF-1079D S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER = -20dBm, Icc = 65mA, Vd = 4.44V @Temperature = +25degC
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ERA-51SM
ERA-51SM
RDF-1079D
-20dBm,
25degC
14164 1994
358-type
419V
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GALI-59
Abstract: No abstract text available
Text: MMIC Amplifier GALI-59+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -20dBm, CURRENT = 65mA INPUT POWER = -20dBm, Temperature = +25°C 40 40 35 -45°C 35 52mA 30 +25°C 30 65mA 25 +85°C 25 78mA 20 dB (dB) 20 15 15 10 10
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GALI-59+
-20dBm,
GALI-59
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LEE-59
Abstract: No abstract text available
Text: MMIC Amplifier LEE-59+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -20dBm, CURRENT = 65mA INPUT POWER = -20dBm, Temperature = +25°C 40 40 35 -45°C 35 52mA 30 +25°C 30 65mA 25 +85°C 25 78mA 20 dB (dB) 20 15 15 10 10
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LEE-59+
-20dBm,
LEE-59
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GALI-5
Abstract: No abstract text available
Text: MMIC Amplifier GALI-5+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -20dBm, CURRENT = 65mA INPUT POWER = -20dBm, Temperature = +25°C 40 40 35 -45°C 35 52mA 30 +25°C 30 65mA 25 +85°C 25 78mA 20 dB (dB) 20 15 15 10 10
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-20dBm,
GALI-5
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ERA-5
Abstract: era 5 mmic era-5
Text: MMIC Amplifier ERA-5+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -20dBm, CURRENT = 65mA INPUT POWER = -20dBm, Temperature = +25°C 22 22 20 -45°C 20 52mA 18 +25°C 18 65mA 16 +85°C 16 78mA 14 dB (dB) 14 12 12 10 10 8
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-20dBm,
ERA-5
era 5
mmic era-5
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GALI-51
Abstract: gali51
Text: MMIC Amplifier GALI-51+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -20dBm, CURRENT = 65mA INPUT POWER = -20dBm, Temperature = +25°C 40 40 35 -45°C 35 52mA 30 +25°C 30 65mA 25 +85°C 25 78mA 20 dB (dB) 20 15 15 10 10
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GALI-51+
-20dBm,
GALI-51
gali51
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ERA-51SM
Abstract: No abstract text available
Text: ERA-51SM+ MMIC Amplifier Typical Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions. Definitions: Input Return Loss = -S11 dB Gain(Power Gain) = S21 (dB) Reverse Isolation = -S12 (dB) Output Return Loss = -S22 (dB) TEST CONDITIONS: Icc = 65mA, Vd = 4.44V @Temperature = +25degC
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ERA-51SM+
25degC
ERA-51SM
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10-PIN
Abstract: DFN-10 EL5228 EL5228IL EL5228IL-T13 LCD Gamma Buffers LCD VCOM
Text: EL5228 Data Sheet PRELIMINARY March 25, 2004 FN7368 VCOM with Dual Gamma Buffer Features The EL5228 integrates a high power VCOM amplifier with dual gamma reference voltage buffers. With 180mA peak and 65mA typical output current, the VCOM amplifier is
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EL5228
FN7368
EL5228
180mA
120mA
12MHz
44MHz
180mA
55MHz
10-PIN
DFN-10
EL5228IL
EL5228IL-T13
LCD Gamma Buffers
LCD VCOM
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SD1A210GW
Abstract: No abstract text available
Text: SD1A210GW SIDAC SIDAC High Voltage Silicon Bidirectional Thyristors 1 AMPERE RMS 220 VOLTS FEATURES •VBO range is from 201 to 219 Vdc •VDRM & VRRM with stand +/- 180V. •IH+/- is under 65mA. •Compact package for spacing saving. Application • Gas Igniters
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SD1A210GW
SD1A210GW
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Untitled
Abstract: No abstract text available
Text: Part Number : 1030 Serial Number : WB T5 Lamps Base Wedge Base Base Type W2x4.6d Lamp Size inch T-1 1/2 Lamp size T5 Rating 14V 65mA Test Volts (V) 14 Current mA 65 Wattage (W) 0,9 Light Output (Lm) 1,9 Light output (mscp) 0,15 AC Life 16000 DC Life 16000
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EL8201
Abstract: DSA002508
Text: Doubling the Output Current to a Load with a Dual Op Amp Application Note May 25, 2005 AN1111.1 Standard linear output current for high speed op amps such as EL8201 is typically 65mA. When more is required, the next available options provide around 200mA, but with a
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AN1111
EL8201
200mA,
1-888-INTERSIL
DSA002508
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SNA-400
Abstract: SNA-476 Sirenza Microdevices, Inc SNA-486
Text: SNA-400 Product Description Sirenza Microdevices SNA-400 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 13dB of gain when biased at 65mA and 5.0V. DC-8 GHz, Cascadable GaAs MMIC Amplifier External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias flexibility
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SNA-400
SNA-400
SNA-476
SNA486)
AN-041
AN-039
EDS-102435
Sirenza Microdevices, Inc
SNA-486
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KFB6
Abstract: No abstract text available
Text: Cell Type KF-B650 Specifications Nominal Capacity Nominal Voltage W w L T 47.5 ±0.3 1.870 ±0.012 16.4 ±0.2 W 0.646 ±0.008 7.8 ±0.2 T 0.307 ±0.008 3.5 w 0.138 L Dimensions of Bare Cell mm inch mm inch mm inch mm inch 650mAh 1.2V Standard 65mA Charging Current
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KF-B650
650mAh
130mA
975mA
16Hrs.
1000Hz)
22g/0
KFB6
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510K-620K
Abstract: 331J RC-855 RC855NP-1R2M RC855NP-1R5M RC855NP-3R6K
Text: POWER INDUCTORS < Pin Type: RC Series> Type:RC-855 ◆ Product Description ・8.3x5.7mm Max. L×W , 8.6mm Max. height ・Inductance Range: 1.0 H~1mH ・Rated Current Range: 65mA∼400mA ◆ Feature ・Magnetically unshielded construction. ・Ideally used in Printers, LCD TV, Copy Machine, Mainboard of the compounding machines, Adapters,
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RC-855
65mA400mA
RC855NP-2R7M-F
RC855NP-3R3M-F
RC855NP-3R9K-F
RC855NP-4R7K-F
RC855NP-5R6K-F
RC855NP-6R8K-F
RC855NP-8R2K-F
510K-620K
331J
RC-855
RC855NP-1R2M
RC855NP-1R5M
RC855NP-3R6K
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RF33
Abstract: No abstract text available
Text: RF Micro Devices General Purpose Amplifiers 18.7 dB RFM RF33 D 74 3.5 dB 175 dBm 65mA 170 DegC/W 13.2 dB 4.5 dB RFM RF33 D 75 Pb-Free and ROHS Compliant 16.0 dBm 65mA 175 DegC/W 19.8 dB RFM RF33 D 76 2.0 dB Actual Size 11.5 dBm 35mA 216 DegC/W 0.50 0.30
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Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LB3218T331K Features Item Summary 330 H(±10%), 65mA, 1207 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 1207/3218
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LB3218T331K
2000pcs
796MHz
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Untitled
Abstract: No abstract text available
Text: WJA1005 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • Cascadable gain block 50 – 1200 MHz 18 dB Gain +17 dBm P1dB +35 dBm OIP3 @ 900MHz Operates from +5V @ 65mA Robust 1000V ESD, Class 1C RoHS-compliant SOT-89 package
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WJA1005
900MHz
OT-89
WJA1005
1-800-WJ1-4401
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Untitled
Abstract: No abstract text available
Text: WJA1505 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • • Cascadable gain block 50 – 1000 MHz 19 dB Gain +19 dBm P1dB +37 dBm OIP3 +51dBm OIP2 Operates from +5V @ 65mA Robust 1000V ESD, Class 1C RoHS-compliant SOT-89 package
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WJA1505
51dBm
OT-89
WJA1505
1-800-WJ1-4401
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Untitled
Abstract: No abstract text available
Text: WJA1035 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • • Cascadable gain block 50 – 4000 MHz 15 dB Gain @ 1.9GHz +16.5 dBm P1dB @ 1.9GHz +35 dBm OIP3 @ 1.9GHz Operates from +5V @ 65mA • • • • Wireless Infrastructure
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WJA1035
WJA1035
OT-89
1-800-WJ1-4401
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ic a1005
Abstract: TriQuint SOT-89 TAPE AND REEL INFORMATION A1005 JESD22-A114 TQP3M9008 WJA1005 WJA1005-PCB
Text: WJA1005 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • Cascadable gain block 50 – 1200 MHz 18 dB Gain +17 dBm P1dB +35 dBm OIP3 @ 900MHz Operates from +5V @ 65mA Robust 1000V ESD, Class 1C RoHS-compliant SOT-89 package
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WJA1005
900MHz
OT-89
WJA1005
ic a1005
TriQuint SOT-89 TAPE AND REEL INFORMATION
A1005
JESD22-A114
TQP3M9008
WJA1005-PCB
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INDUCTOR 220uH
Abstract: 220UH 5A
Text: 1. M e c h a n ic a l D im e n s i o n s : 2. S c h e m a t i c : 2.5±0.2 X o = IIJ J —I O L .H 3. E l e c t r i c a l CM A I— 3 .2 Ì0 .3 S p e c if ic a t io n s :@ 2 5 ° C B 2.90 Max INDUCTANCE: 220uH ±20% @100KHz 0.1V IDC: 65mA DC RESISTANCE: 11.80 OHMS Maximum
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220uH
100KHz
40Typ
796MHz
-Z02G,
UL94V-0
E151556
102mm>
INDUCTOR 220uH
220UH 5A
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