Untitled
Abstract: No abstract text available
Text: product brief Intel IXF30001 FEC Transponder Product Description Features • ■ ■ ■ Two 16 x 666Mbps differential LVDScompatible line data I/O Two 16 x 622Mbps differential LVDScompatible payload data I/O 16-channel RS 255,239 error protection scheme, including scrambling per G.975
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IXF30001
666Mbps
622Mbps
16-channel
IXF30001
USA/0101/IK/ASI/DC
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regenerator in optical
Abstract: IXF30001 STM-64 10Gbps Regenerator
Text: product brief Intel IXF30001 FEC Transponder Product Description Features • ■ ■ ■ Two 16 x 666Mbps differential LVDScompatible line data I/O Two 16 x 622Mbps differential LVDScompatible payload data I/O 16-channel RS 255,239 error protection scheme, including scrambling per G.975
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IXF30001
666Mbps
622Mbps
16-channel
IXF30001
USA/0101/IK/ASI/DC
regenerator in optical
STM-64
10Gbps Regenerator
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PDF
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SOP 8 200MIL
Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with
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D-85622
REJ01C0001-0100Z
SOP 8 200MIL
serial flash 256Mb fast erase spi
TM 1628 IC SOP
Micron 512MB NOR FLASH
HN29V1G91T-30
HN58C1001FPI-15
M5M51008DFP-70HI
256mb EEPROM Memory
CSP-48
TSOP 28 SPI memory Package flash
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TC59LM836DKB
Abstract: TC59LM836DKB-33
Text: TC59LM836DKB-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 2,097,152-WORDS x 4 BANKS × 36-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DKB is Network
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TC59LM836DKB-33
288Mbits
152-WORDS
36-BITS
TC59LM836DKB
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STM-16
Abstract: XRT91L81 XRT91L81IB STM-16 LIU B30 ferrite
Text: PRELIMINARY XRT91L81 2.488/2.666GBPS OC-48/STM-16 SONET/SDH TRANSCEIVER JANUARY 2004 REV. P1.0.3 GENERAL DESCRIPTION an overflow condition. The operation of the device can be monitored by checking the status of the LOCKDET and LOSDET output signals. An on-chip
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XRT91L81
666GBPS
OC-48/STM-16
XRT91L81
OC-48
STM-16
XRT91L81IB
STM-16 LIU
B30 ferrite
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PDF
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qfn-44 PACKAGE footprint
Abstract: No abstract text available
Text: KIT ATION EVALU E L B AVAILA 19-2215; Rev 6; 10/07 +3.3V, 2.5Gbps/2.7Gbps, SDH/SONET 4:1 Serializer with Clock Synthesis The MAX3892 serializer is ideal for converting 4-bitwide, 622Mbps parallel data to 2.5Gbps serial data in DWDM and SONET/SDH applications. A 4 ✕ 4-bit FIFO
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MAX3892
622Mbps
622MHz,
MAX3892EVKIT
MAX3892
mvp/id/3215/t/al
15-Nov-2010
qfn-44 PACKAGE footprint
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PDF
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HY5DU281622ET
Abstract: HY5DU281622ET-25 HY5DU281622ET-26 HY5DU281622ET-28 HY5DU281622ET-30 HY5DU281622ET-33 HY5DU281622ET-36 HY5DU281622ET-4 HY5DU281622ET-5
Text: HY5DU281622ET 128M 8Mx16 GDDR SDRAM HY5DU281622ET This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.5 / Jan. 2005
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HY5DU281622ET
8Mx16)
166Mhz
200Mhz)
400mil
66pin
HY5DU281622ET
HY5DU281622ET-25
HY5DU281622ET-26
HY5DU281622ET-28
HY5DU281622ET-30
HY5DU281622ET-33
HY5DU281622ET-36
HY5DU281622ET-4
HY5DU281622ET-5
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666Hz
Abstract: No abstract text available
Text: 19-2215; Rev 0; 11/01 +3.3V, 2.5Gbps/2.7Gbps, SDH/SONET 4:1 Serializer with Clock Synthesis Operating from a single 3.3V supply, this device accepts low-voltage differential-signal LVDS clock and data inputs for interfacing with high-speed digital circuitry, and delivers current-mode logic (CML) serial
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MAX3892
622Mbps
622MHz,
MAX3892
666Hz
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HY5DU281622ET
Abstract: HY5DU281622ET-25 HY5DU281622ET-26 HY5DU281622ET-28 HY5DU281622ET-30 HY5DU281622ET-33 HY5DU281622ET-36 HY5DU281622ET-4 HY5DU281622ET-5
Text: HY5DU281622ET 128M 8Mx16 gDDR SDRAM HY5DU281622ET This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.5 / Jan. 2005
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HY5DU281622ET
8Mx16)
166Mhz
200Mhz)
400mil
66pin
HY5DU281622ET
HY5DU281622ET-25
HY5DU281622ET-26
HY5DU281622ET-28
HY5DU281622ET-30
HY5DU281622ET-33
HY5DU281622ET-36
HY5DU281622ET-4
HY5DU281622ET-5
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TC59LM818DMB-33
Abstract: TC59LM818DMB
Text: TC59LM818DMB-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 4,194,304-WORDS x 4 BANKS × 18-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMB is Network
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TC59LM818DMB-33
288Mbits
304-WORDS
18-BITS
TC59LM818DMB
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K7D803671B
Abstract: K7D801871B-HC25 K7D801871B-HC30 K7D801871B-HC33 K7D803671B-HC25 K7D803671B-HC30 K7D803671B-HC33
Text: K7D803671B K7D801871B Preliminary 256Kx36 & 512Kx18 SRAM Document Title 8M DDR SYNCHRONOUS SRAM Revision History Rev No. Rev. 0.0 History -Initial document. Draft Data July. 2000 Remark Advance Rev. 0.1 -ZQ tolerance changed from 10% to 15% Aug. 2000 Advance
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K7D803671B
K7D801871B
256Kx36
512Kx18
-HC16
012MAX
K7D803671B
K7D801871B-HC25
K7D801871B-HC30
K7D801871B-HC33
K7D803671B-HC25
K7D803671B-HC30
K7D803671B-HC33
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Untitled
Abstract: No abstract text available
Text: 19-2215; Rev 2; 3/06 +3.3V, 2.5Gbps/2.7Gbps, SDH/SONET 4:1 Serializer with Clock Synthesis The MAX3892 serializer is ideal for converting 4-bitwide, 622Mbps parallel data to 2.5Gbps serial data in DWDM and SONET/SDH applications. A 4 ✕ 4-bit FIFO allows for any static delay between the parallel output
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MAX3892
622Mbps
622MHz,
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SMPTE-424M
Abstract: virtex 5 vs spartan 3e adc virtex 4 vs spartan 3e SMPTE424M SIGNAL PATH designer XAPP514 Spartan 3E xilinx adc LMH0040 LMH0051
Text: SIGNAL PATH designer Tips, tricks, and techniques from the analog signal-path experts No. 113 特集記事. 1-5 シンク ･ セパレータ .4 クロスポイント･スイッチ . 7 非圧縮の1080p60ビデオをサポートする
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1080p60
SMPTE-259M]
270Mbps
480i60
SMPTE-292M]
485Gbps
720p60
1080i60
1080p603Gbps
SMPTE-424M]
SMPTE-424M
virtex 5 vs spartan 3e adc
virtex 4 vs spartan 3e
SMPTE424M
SIGNAL PATH designer
XAPP514
Spartan 3E
xilinx adc
LMH0040
LMH0051
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Untitled
Abstract: No abstract text available
Text: xr XRT91L80 PRELIMINARY 2.488/2.666GBPS OC-48/STM-16 SONET/SDH TRANSCEIVER JANUARY 2005 REV. P1.0.3 GENERAL DESCRIPTION AUTORST pin can automatically recover from an overflow condition. The operation of the device can be monitored by checking the status of the LOCKDET
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XRT91L80
666GBPS
OC-48/STM-16
XRT91L80
OC-48
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Untitled
Abstract: No abstract text available
Text: HY5DU281622ETP 128M 8Mx16 DDR SDRAM HY5DU281622ETP This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DU281622ETP
8Mx16)
HY5DU281622ETP
728-bit
400mil
66pin
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APD 10gbps
Abstract: 10Gbps Regenerator GR-253 GR-253-CORE GT10-1550FEC STM-64 APD for 10Gbps gt10 optical transponder gt10-1550 transceiver 10gb 300-pin
Text: GT10-1550FEC 10Gb/s Transceiver The GT10-1550FEC is a fully integrated, self-contained 10Gbit/s electro-optical data transceiver. Building on the performance and functionality of standard 10Gbit/s transponders, the 1550FEC’s additional features include forward error
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GT10-1550FEC
10Gb/s
GT10-1550FEC
10Gbit/s
1550FEC
APD 10gbps
10Gbps Regenerator
GR-253
GR-253-CORE
STM-64
APD for 10Gbps
gt10 optical transponder
gt10-1550
transceiver 10gb 300-pin
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Untitled
Abstract: No abstract text available
Text: KIT ATION EVALU E L B AVAILA 19-2215; Rev 6; 10/07 +3.3V, 2.5Gbps/2.7Gbps, SDH/SONET 4:1 Serializer with Clock Synthesis The MAX3892 serializer is ideal for converting 4-bitwide, 622Mbps parallel data to 2.5Gbps serial data in DWDM and SONET/SDH applications. A 4 ✕ 4-bit FIFO
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MAX3892
622Mbps
622MHz,
MAX3892EHT+
MAX3892
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MAX3273
Abstract: MAX3882 MAX3892 MAX3892EGH 1024EP
Text: KIT ATION EVALU E L B AVAILA 19-2215; Rev 6; 10/07 +3.3V, 2.5Gbps/2.7Gbps, SDH/SONET 4:1 Serializer with Clock Synthesis The MAX3892 serializer is ideal for converting 4-bitwide, 622Mbps parallel data to 2.5Gbps serial data in DWDM and SONET/SDH applications. A 4 ✕ 4-bit FIFO
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MAX3892
622Mbps
622MHz,
MAX3892EHT+
MAX3892
MAX3273
MAX3882
MAX3892EGH
1024EP
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TC59LM818DMG-33
Abstract: No abstract text available
Text: TC59LM818DMG-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead-Free 288Mbits Network FCRAM2 − 4,194,304-WORDS x 4 BANKS × 18-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMG is Network
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TC59LM818DMG-33
288Mbits
304-WORDS
18-BITS
TC59LM818DMG
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Untitled
Abstract: No abstract text available
Text: HY5DU281622ETP 128M 8Mx16 GDDR SDRAM HY5DU281622ETP This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DU281622ETP
8Mx16)
166Mhz
200Mhz)
HY5DU281622ETP
728-bit
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PDF
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HY5DU281622ETP-5
Abstract: No abstract text available
Text: HY5DU281622ETP 128M 8Mx16 GDDR SDRAM HY5DU281622ETP This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DU281622ETP
8Mx16)
HY5DU281622ETP
728-bit
400mil
66pin
HY5DU281622ETP-5
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HY5DU281622ET-4
Abstract: HY5DU281622ET-36 HY5DU281622ET HY5DU281622ET-25 HY5DU281622ET-26 HY5DU281622ET-28 HY5DU281622ET-30 HY5DU281622ET-33
Text: HY5DU281622ET 128M 8Mx16 gDDR SDRAM HY5DU281622ET This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DU281622ET
8Mx16)
1HY5DU281622ET
166Mhz
200Mhz)
400mil
66pin
HY5DU281622ET-4
HY5DU281622ET-36
HY5DU281622ET
HY5DU281622ET-25
HY5DU281622ET-26
HY5DU281622ET-28
HY5DU281622ET-30
HY5DU281622ET-33
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HY5DU281622ET-6
Abstract: No abstract text available
Text: HY5DU281622ET 128M 8Mx16 DDR SDRAM HY5DU281622ET This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.2 / Oct. 2003
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HY5DU281622ET
8Mx16)
HY5DU281622ET
728-bit
400mil
66pin
HY5DU281622ET-6
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zy 406 transistor
Abstract: zy 406 HY5DU281622ET HY5DU281622ET-25 HY5DU281622ET-26 HY5DU281622ET-28 HY5DU281622ET-30 HY5DU281622ET-33 HY5DU281622ET-36 HY5DU281622ET-4
Text: HY5DU281622ET 128M 8Mx16 GDDR SDRAM HY5DU281622ET This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.5 / Jan. 2005
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HY5DU281622ET
8Mx16)
166Mhz
200Mhz)
400mil
66pin
zy 406 transistor
zy 406
HY5DU281622ET
HY5DU281622ET-25
HY5DU281622ET-26
HY5DU281622ET-28
HY5DU281622ET-30
HY5DU281622ET-33
HY5DU281622ET-36
HY5DU281622ET-4
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