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    TXC Corporation 7L-16.367667MBS-T

    TCXO Oscillators 16.367667MHz SMD TCXO 2.5 x 2.0 x 0.8mm
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    Mouser Electronics 7L-16.367667MBS-T
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    667MBS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  69% space savings vs. FPBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm


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    W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB PDF

    W3H32M72E-XSBX

    Abstract: calibration definition
    Text: White Electronic Designs W3H32M72E-XSBX PRELIMINARY* 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667*, 533, 400 Programmable CAS latency: 3, 4, 5, or 6 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm


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    W3H32M72E-XSBX W3H32M72E-XSBX calibration definition PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3H32M72E-XSBX PRELIMINARY* 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667, 533, 400 „ Programmable CAS latency: 3, 4, 5, or 6 „ Package: „ Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm


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    W3H32M72E-XSBX W3H32M72E-XSBX 667Mbs PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3H32M64E-XSBX ADVANCED* 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667*, 533, 400 Programmable CAS latency: 3, 4 or 5 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 20mm


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    W3H32M64E-XSBX W3H32M64E-XSBX PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3H32M64E-XSBX 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667, 533, 400 „ Write latency = Read latency - 1* tCK „ Package: „ Commercial, Industrial and Military Temperature Ranges „ Organized as 32M x 64, user configurable as 2 x


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    W3H32M64E-XSBX 667Mbs PDF

    W3H32M72E

    Abstract: BA0BA12
    Text: White Electronic Designs W3H32M72E-XSBX 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Data rate = 667, 533, 400  Programmable CAS latency: 3, 4, 5, or 6  Package:  Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm


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    W3H32M72E-XSBX 667Mbs 533Mbs) 650ps, -550ps, 500ps. W3H32M72E BA0BA12 PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3H64M72E-XSBX PRELIMINARY* 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667*, 533, 400 „ Programmable CAS latency: 3, 4 or 5 „ Package: „ Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 22mm


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    W3H64M72E-XSBX PDF

    W3H128M72

    Abstract: W3H128M72E-XSBX W3H128M72E
    Text: White Electronic Designs W3H128M72E-XSBX Advanced* 128M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667, 533, 400 „ Package: „ CK/CK# Termination options available • 0 ohm, 20 ohm • 208 Plastic Ball Grid Array PBGA , 16 x 22mm


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    W3H128M72E-XSBX W3H128M72 W3H128M72E-XSBX W3H128M72E PDF

    W3H32M72E

    Abstract: No abstract text available
    Text: White Electronic Designs W3H32M72E-XSB2X Preliminary 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Data rate = 667, 533, 400  Programmable CAS latency: 3, 4, 5, or 6  Package:  Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 20mm


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    W3H32M72E-XSB2X W3H32M72E PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3H32M72E-XSBX * 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667, 533, 400 „ Programmable CAS latency: 3, 4, 5, or 6 „ Package: „ Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 18 x 20mm


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    W3H32M72E-XSBX 667Mbs PDF

    W3H64M64E

    Abstract: No abstract text available
    Text: White Electronic Designs W3H64M64E-XSBX 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667, 533, 400 „ Write latency = Read latency - 1* tCK „ Package: „ Commercial, Industrial and Military Temperature Ranges • 1.0mm pitch „


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    W3H64M64E-XSBX 667Mbs W3H64M64E PDF

    AS4DDR264M72PBG

    Abstract: H11M1
    Text: iPEM 4.8 Gb SDRAM-DDR2 AS4DDR264M72PBG1 64Mx72 DDR2 SDRAM w/ SHARED CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • Proprietary Enchanced Die Stacked iPEM


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    AS4DDR264M72PBG1 64Mx72 dat008 AS4DDR264M72PBG H11M1 PDF

    Untitled

    Abstract: No abstract text available
    Text: W3H64M72E-XSBX W3H64M72E-XSBXF 512MB – 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400 Mb/s  30% Space saving vs. FBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 22mm


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    W3H64M72E-XSBX W3H64M72E-XSBXF 512MB 667Mbs 533Mbs 400Mbs PDF

    84 FBGA

    Abstract: W3H64M72E-XSBX fbga84 ccd400
    Text: White Electronic Designs W3H64M72E-XSBX 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Commercial, Industrial and Military Temperature Ranges • 208 Plastic Ball Grid Array PBGA , 16 x 22mm „ Organized as 64M x 72 • 1.0mm pitch „ Weight: W3H64M72E-XSBX - 2.5 grams typical


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    W3H64M72E-XSBX W3H64M72E-XSBX 84 FBGA fbga84 ccd400 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Nomenclature Guide: ZEÊÛđ½ƒãçٛ Logic Devices Incorporated Product Type 9D = DDR 2 = DDR2 3 = DDR3 Words 32M = 32 MB 64M = 64 MB 128M = 128 MB 256M = 256 MB 512M = 512 MB 1G = 1024 MB Wordwidth 32 = x32 64 = x64 72 = x72 80 = x80 S = Single Channel


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    200MHz 400Mbs 533Mbs 333MHz 667Mbs 400MHz 800Mbs 533MHz 1066Mbs 667MHz PDF

    H11M1

    Abstract: No abstract text available
    Text: i PEM 4.8 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR264M72PBG1 64Mx72 DDR2 SDRAM w/ SHARED CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit FEATURES „ „ „ BENEFITS „ „ DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Extended Temp


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    AS4DDR264M72PBG1 64Mx72 daDDR264M72PBG1 H11M1 PDF

    W3H128M72E-XSBX

    Abstract: 84 FBGA
    Text: White Electronic Designs W3H128M72E-XSBX 128M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Data rate = 667, 533, 400  Package:  CK/CK# Termination options available • 0 ohm, 20 ohm • 208 Plastic Ball Grid Array PBGA , 16 x 22mm  Posted CAS additive latency: 0, 1, 2, 3 or 4


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    W3H128M72E-XSBX 775mA 975mA -100ps 250ps 350ps 400ps W3H128M72E-XSBX 84 FBGA PDF

    18CO

    Abstract: No abstract text available
    Text: White Electronic Designs W3H64M64E-XSBX ADVANCED* 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Commercial, Industrial and Military Temperature Ranges • 208 Plastic Ball Grid Array PBGA , 16 x 22mm  Organized as 64M x 64 • 1.0mm pitch


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    W3H64M64E-XSBX 18CO PDF

    W3H128M72ER-XSBX

    Abstract: LDM-1 W3H128M72
    Text: White Electronic Designs W3H128M72ER-XNBX PRELIMINARY* 128M x 72 REGISTERED DDR2 SDRAM 255 PBGA FEATURES  Data rate = 667, 533, 400 Mb/s  Posted CAS additive latency: 0, 1, 2, 3 or 4  Package:  Write latency = Read latency - 1* tCK  Commercial, Industrial and Military Temperature


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    W3H128M72ER-XNBX W3H128M72ER-XSBX LDM-1 W3H128M72 PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3H64M72E-XSBX ADVANCED* 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667*, 533, 400 „ Programmable CAS latency: 3, 4 or 5 „ Package: „ Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 22mm


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    W3H64M72E-XSBX PDF

    Untitled

    Abstract: No abstract text available
    Text: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  69% space savings vs. FPBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm


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    W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB W3H64M72E-XSBXF SN63Pb37 SAC305 256MB" PDF

    Untitled

    Abstract: No abstract text available
    Text: W3H128M72ER-XNBX ADVANCED* 128M x 72 REGISTERED DDR2 SDRAM 255 PBGA FEATURES BENEFITS  Data rate = 667, 533, 400 Mb/s  45% Space savings vs. FBGA  Package:  Reduced part count • 255 Plastic Ball Grid Array PBGA , 23 x 21mm  51% I/O reduction vs FBGA


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    W3H128M72ER-XNBX PDF

    Untitled

    Abstract: No abstract text available
    Text: W3H264M16E-XSBX 256MB – 2 x 64M x 16 DDR2 SDRAM 79 PBGA FEATURES BENEFITS  Data rate = 400 Mb/s, 533 Mb/s, 667 Mb/s  Larger ball pitch for higher reliability  Package:  Footprint compatible with W3H64M16E • 79 Plastic Ball Grid Array PBGA , 11 x 14mm


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    W3H264M16E-XSBX 256MB W3H64M16E 128MB" PDF

    Untitled

    Abstract: No abstract text available
    Text: W3H32M64E-XSBX 256MB – 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400 Mb/s  62% Space savings vs. FBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm  42% I/O reduction vs FBGA


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    W3H32M64E-XSBX 256MB 256MB" PDF