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    3M 3M 1350F-1 12MM 66M BIAŁA

    Tape: electrical insulating; W: 12mm; L: 66m; Thk: 0.063mm; white
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 3M 1350F-1 12MM 66M BIAŁA 4 1
    • 1 $7.08
    • 10 $6.19
    • 100 $6.19
    • 1000 $6.19
    • 10000 $6.19
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    3M 3M 1350F-1 19MM 66M BIAŁA

    Tape: electrical insulating; W: 19mm; L: 66m; Thk: 0.063mm; white
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 3M 1350F-1 19MM 66M BIAŁA 3 1
    • 1 $10.62
    • 10 $9.29
    • 100 $9.29
    • 1000 $9.29
    • 10000 $9.29
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    66MBI Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K9S2808V0C

    Abstract: K9S6408V0C K9S5608V0X
    Text: K9S5608V0C/B K9S2808V0C/B K9S6408V0C/B SmartMediaTM Document Title SmartMediaTM Card Revision History Revision No Draft Date Remark 0.0 Initial issue July 17th 2000 0.1 1. Explain how pointer operation works in detail. 2. Updated operation for tRST timing


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    PDF K9S5608V0C/B K9S2808V0C/B K9S6408V0C/B K9S2808V0C K9S6408V0C K9S5608V0X

    TIB0

    Abstract: K9F6408Q0C K9F6408Q0C-B K9F6408U0C K9F6408U0C-B K9F6408U0C-QCB0
    Text: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA


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    PDF K9F6408Q0C K9F6408U0C K9F6408U0C-Y K9F6408U0C 9mmX11mm 63ball 48ball K9F6408Q0C-D K9F6408Q0C-B K9F6408U0C-D TIB0 K9F6408Q0C K9F6408Q0C-B K9F6408U0C-B K9F6408U0C-QCB0

    date code marking samsung

    Abstract: digital VOICE RECORDER data sheet K9S6408V0A-SSB0 SmartMedia Logical Format K9S3208V0A K9S6408V0A SmartMediaTM Physical Format Specifications A22 T transistor
    Text: SmartMediaTM K9S6408V0A-SSB0 Document Title 8M x 8 Bit SmartMedia TM Card Revision History Revision No. History Draft Date Remark 0.0 Initial issue April 10th 1999 Preliminary 0.1 1. Changed device name - SMFV008A -> K9S6408V0A-SSB0 Sep. 15th 1999 Preliminary


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    PDF K9S6408V0A-SSB0 SMFV008A 000us 500us date code marking samsung digital VOICE RECORDER data sheet K9S6408V0A-SSB0 SmartMedia Logical Format K9S3208V0A K9S6408V0A SmartMediaTM Physical Format Specifications A22 T transistor

    cmos static ram 1mx8 5v

    Abstract: No abstract text available
    Text: K5P6480YCM - T085 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8 Nand Flash Memory / 8M Bit (1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Nov. 19th 2000 Advanced Information 0.1 -Changed Operating Voltage from 2.4V - 3.0V to 2.7V - 3.3V


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    PDF K5P6480YCM 1Mx8/512Kx16) K5P6480TCM-T085 K5P6480YCM-T085 69-Ball 08MAX cmos static ram 1mx8 5v

    Samsung 6v 6 pin camera

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K9F6408U0A-TCB0, K9F6408U0A-TIB0 Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1999 Preliminary 0.1 1. Revised real-time map-out algorithm refer to technical notes


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    PDF K9F6408U0A-TCB0, K9F6408U0A-TIB0 KM29U64000AT K9F6408U0A-TCB0 KM29U64000AIT K9F6408U0A-TIB0 000us 500us Samsung 6v 6 pin camera

    Untitled

    Abstract: No abstract text available
    Text: SmartMediaTM SMFV008A Document Title 8M x 8 Bit SmartMediaTM Card Revision History Revision No. History 0.0 Initial Issue 0.1 1. Changed the following items ITEM Before M-die After(A-die) Program Time 1,000us(Max.) 500us(Max.) 0.8V and 2.0V 1.5V Input and output timing levels


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    PDF SMFV008A 000us 500us

    Untitled

    Abstract: No abstract text available
    Text: K9F6408Q0C-BCB0,K9F6408Q0C-BIB0 K9F6408U0C-TCB0,K9F6408U0C-TIB0 K9F6408U0C-BCB0,K9F6408U0C-BIB0 K9F6408U0C-VCB0,K9F6408U0C-VIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue.


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    PDF K9F6408Q0C-BCB0 K9F6408Q0C-BIB0 K9F6408U0C-TCB0 K9F6408U0C-TIB0 K9F6408U0C-BCB0 K9F6408U0C-BIB0 K9F6408U0C-VCB0 K9F6408U0C-VIB0 K9F6408U0C-Y K9F6408U0C

    K9F6408U0C-Q

    Abstract: No abstract text available
    Text: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA


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    PDF K9F6408Q0C K9F6408U0C K9F6408U0C-Y K9F6408U0C 9mmX11mm 63ball 48ball K9F6408Q0C-D K9F6408Q0C-B K9F6408U0C-D K9F6408U0C-Q

    K9F6408U0B-TCB0

    Abstract: 400F K9F6408U0B K9F6408U0B-TIB0
    Text: K9F6408U0B-TCB0, K9F6408U0B-TIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark July 17th 2000 Preliminary Initial issue. 1. Changed endurance : 1 million -> 100K program/erase cycles 0.1 1. Changed don’t care mode in address cycles


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    PDF K9F6408U0B-TCB0, K9F6408U0B-TIB0 K9F6408U0B-TCB0 400F K9F6408U0B K9F6408U0B-TIB0

    400F

    Abstract: KM29V64000T
    Text: KM29V64000T FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed t BERS Parameter : 10ms Max. → 4ms(Max.). 2. Removed reverse type package.


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    PDF KM29V64000T 400F KM29V64000T

    Untitled

    Abstract: No abstract text available
    Text: K9F6408U0A-TCB0, K9F6408U0A-TIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1999 Preliminary 0.1 1. Revised real-time map-out algorithm refer to technical notes


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    PDF K9F6408U0A-TCB0, K9F6408U0A-TIB0 KM29U64000AT K9F6408U0A-TCB0 KM29U64000AIT 000us 500us

    K9S6408V0B

    Abstract: K9S6408V0B-SSB0
    Text: Advanced Information SmartMediaTM K9S6408V0B-SSB0 Document Title 8M x 8 Bit SmartMedia TM Card Revision History Revision No. History Draft Date Remark Advanced Information 0.0 Initial issue July 17th 2000 0.1 1. Changed don’t care mode in address cycles


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    PDF K9S6408V0B-SSB0 K9S6408V0B K9S6408V0B-SSB0

    Untitled

    Abstract: No abstract text available
    Text: K9F6408U0B-TCB0, K9F6408U0B-TIB0 Preliminary FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark July 17th 2000 Preliminary 1. Changed endurance : 1 million -> 100K program/erase cycles


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    PDF K9F6408U0B-TCB0, K9F6408U0B-TIB0

    Untitled

    Abstract: No abstract text available
    Text: KM29U64000AT, KM29U64000AIT Preliminary FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1999 Preliminary The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the


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    PDF KM29U64000AT, KM29U64000AIT

    400F

    Abstract: K9F6408U0B K9F6408U0B-TCB0 K9F6408U0B-TIB0 2903M
    Text: K9F6408U0B-TCB0, K9F6408U0B-TIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark July 17th 2000 Preliminary Initial issue. 1. Changed endurance : 1 million -> 100K program/erase cycles 0.1 1. Changed don’t care mode in address cycles


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    PDF K9F6408U0B-TCB0, K9F6408U0B-TIB0 400F K9F6408U0B K9F6408U0B-TCB0 K9F6408U0B-TIB0 2903M

    KM29U64000IT

    Abstract: KM29U64000T 400F
    Text: KM29U64000T, KM29U64000IT FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to cha nge the


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    PDF KM29U64000T, KM29U64000IT KM29U64000IT KM29U64000T 400F

    smartmedia ecc

    Abstract: No abstract text available
    Text: Advanced Information SmartMediaTM K9S6408V0B-SSB0 Document Title 8M x 8 Bit SmartMedia TM Card Revision History Revision No. History 0.0 Initial issue Draft Date Remark July 17th 2000 Preliminary Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.


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    PDF K9S6408V0B-SSB0 smartmedia ecc

    K9F6408Q0C

    Abstract: K9F6408Q0C-B K9F6408U0C K9F6408U0C-B K9F6408U0C-QCB0
    Text: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA


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    PDF K9F6408Q0C K9F6408U0C K9F6408U0C-Y K9F6408U0C 9mmX11mm 63ball 48ball K9F6408Q0C-D K9F6408Q0C-B K9F6408U0C-D K9F6408Q0C K9F6408Q0C-B K9F6408U0C-B K9F6408U0C-QCB0

    K9F6408U0C

    Abstract: K9F6408U0C-tcb0 K9F6408 K9F6408Q0C K9F6408Q0C-B K9F6408Q0C-BCB0
    Text: K9F6408U0C-TCB0,K9F6408U0C-TIB0 K9F6408Q0C-BCB0,K9F6408Q0C-BIB0 K9F6408U0C-BCB0,K9F6408U0C-BIB0 K9F6408Q0C : Preliminary FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Draft Date Remark Initial issue.


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    PDF K9F6408U0C-TCB0 K9F6408U0C-TIB0 K9F6408Q0C-BCB0 K9F6408Q0C-BIB0 K9F6408U0C-BCB0 K9F6408U0C-BIB0 K9F6408Q0C K9F6408U0C-Y K9F6408U0C 9mmX11mm K9F6408 K9F6408Q0C K9F6408Q0C-B

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY KM29V64000T Document Title 8M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S Param eter: 10ms Max. —> 4ms(Max.). 2. Removed reverse type package.


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    PDF KM29V64000T

    TS 4142

    Abstract: ro1f
    Text: Advance Information KM29V64001 TS/RS 8Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M+128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase


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    PDF KM29V64001 200us 71b4142 DD2447D -TSOP2-400F 74tMAX -TSQP2-400R DD24471 TS 4142 ro1f

    A17-A22

    Abstract: No abstract text available
    Text: Advance Information KM29V64000TS/RS FLASH MEMORY 8 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : {512 + 16)bit x 8bit • Automatic Program and Erase


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    PDF KM29V64000TS/RS 200us KM29V64000 P2-400F 10max] -TSOP2-400R A17-A22

    29V640

    Abstract: No abstract text available
    Text: KM29 V 64000 R Flash ELECTR ONICS 8Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : (512+ 16)bitx8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte


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    PDF 200us KM29V64000R 0D31BÃ 29V640

    29V640

    Abstract: No abstract text available
    Text: Advance Information FLASH MEMORY KM29V64000T/R 8M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization The KM29V64000T/R is a 8M 8,388,608 x8 bit NAND - Memory Cell Array •Data Register Flash memory with a spare 256K(262,144)x8 bit.


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    PDF KM29V64000T/R KM29V64000T/R 528-byte 200ns 29V640