K9S2808V0C
Abstract: K9S6408V0C K9S5608V0X
Text: K9S5608V0C/B K9S2808V0C/B K9S6408V0C/B SmartMediaTM Document Title SmartMediaTM Card Revision History Revision No Draft Date Remark 0.0 Initial issue July 17th 2000 0.1 1. Explain how pointer operation works in detail. 2. Updated operation for tRST timing
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K9S5608V0C/B
K9S2808V0C/B
K9S6408V0C/B
K9S2808V0C
K9S6408V0C
K9S5608V0X
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TIB0
Abstract: K9F6408Q0C K9F6408Q0C-B K9F6408U0C K9F6408U0C-B K9F6408U0C-QCB0
Text: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA
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K9F6408Q0C
K9F6408U0C
K9F6408U0C-Y
K9F6408U0C
9mmX11mm
63ball
48ball
K9F6408Q0C-D
K9F6408Q0C-B
K9F6408U0C-D
TIB0
K9F6408Q0C
K9F6408Q0C-B
K9F6408U0C-B
K9F6408U0C-QCB0
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date code marking samsung
Abstract: digital VOICE RECORDER data sheet K9S6408V0A-SSB0 SmartMedia Logical Format K9S3208V0A K9S6408V0A SmartMediaTM Physical Format Specifications A22 T transistor
Text: SmartMediaTM K9S6408V0A-SSB0 Document Title 8M x 8 Bit SmartMedia TM Card Revision History Revision No. History Draft Date Remark 0.0 Initial issue April 10th 1999 Preliminary 0.1 1. Changed device name - SMFV008A -> K9S6408V0A-SSB0 Sep. 15th 1999 Preliminary
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K9S6408V0A-SSB0
SMFV008A
000us
500us
date code marking samsung
digital VOICE RECORDER data sheet
K9S6408V0A-SSB0
SmartMedia Logical Format
K9S3208V0A
K9S6408V0A
SmartMediaTM Physical Format Specifications
A22 T transistor
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cmos static ram 1mx8 5v
Abstract: No abstract text available
Text: K5P6480YCM - T085 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8 Nand Flash Memory / 8M Bit (1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Nov. 19th 2000 Advanced Information 0.1 -Changed Operating Voltage from 2.4V - 3.0V to 2.7V - 3.3V
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K5P6480YCM
1Mx8/512Kx16)
K5P6480TCM-T085
K5P6480YCM-T085
69-Ball
08MAX
cmos static ram 1mx8 5v
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Samsung 6v 6 pin camera
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K9F6408U0A-TCB0, K9F6408U0A-TIB0 Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1999 Preliminary 0.1 1. Revised real-time map-out algorithm refer to technical notes
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K9F6408U0A-TCB0,
K9F6408U0A-TIB0
KM29U64000AT
K9F6408U0A-TCB0
KM29U64000AIT
K9F6408U0A-TIB0
000us
500us
Samsung 6v 6 pin camera
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Untitled
Abstract: No abstract text available
Text: SmartMediaTM SMFV008A Document Title 8M x 8 Bit SmartMediaTM Card Revision History Revision No. History 0.0 Initial Issue 0.1 1. Changed the following items ITEM Before M-die After(A-die) Program Time 1,000us(Max.) 500us(Max.) 0.8V and 2.0V 1.5V Input and output timing levels
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SMFV008A
000us
500us
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Untitled
Abstract: No abstract text available
Text: K9F6408Q0C-BCB0,K9F6408Q0C-BIB0 K9F6408U0C-TCB0,K9F6408U0C-TIB0 K9F6408U0C-BCB0,K9F6408U0C-BIB0 K9F6408U0C-VCB0,K9F6408U0C-VIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue.
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K9F6408Q0C-BCB0
K9F6408Q0C-BIB0
K9F6408U0C-TCB0
K9F6408U0C-TIB0
K9F6408U0C-BCB0
K9F6408U0C-BIB0
K9F6408U0C-VCB0
K9F6408U0C-VIB0
K9F6408U0C-Y
K9F6408U0C
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K9F6408U0C-Q
Abstract: No abstract text available
Text: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA
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K9F6408Q0C
K9F6408U0C
K9F6408U0C-Y
K9F6408U0C
9mmX11mm
63ball
48ball
K9F6408Q0C-D
K9F6408Q0C-B
K9F6408U0C-D
K9F6408U0C-Q
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K9F6408U0B-TCB0
Abstract: 400F K9F6408U0B K9F6408U0B-TIB0
Text: K9F6408U0B-TCB0, K9F6408U0B-TIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark July 17th 2000 Preliminary Initial issue. 1. Changed endurance : 1 million -> 100K program/erase cycles 0.1 1. Changed don’t care mode in address cycles
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K9F6408U0B-TCB0,
K9F6408U0B-TIB0
K9F6408U0B-TCB0
400F
K9F6408U0B
K9F6408U0B-TIB0
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400F
Abstract: KM29V64000T
Text: KM29V64000T FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed t BERS Parameter : 10ms Max. → 4ms(Max.). 2. Removed reverse type package.
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KM29V64000T
400F
KM29V64000T
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Untitled
Abstract: No abstract text available
Text: K9F6408U0A-TCB0, K9F6408U0A-TIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1999 Preliminary 0.1 1. Revised real-time map-out algorithm refer to technical notes
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K9F6408U0A-TCB0,
K9F6408U0A-TIB0
KM29U64000AT
K9F6408U0A-TCB0
KM29U64000AIT
000us
500us
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K9S6408V0B
Abstract: K9S6408V0B-SSB0
Text: Advanced Information SmartMediaTM K9S6408V0B-SSB0 Document Title 8M x 8 Bit SmartMedia TM Card Revision History Revision No. History Draft Date Remark Advanced Information 0.0 Initial issue July 17th 2000 0.1 1. Changed don’t care mode in address cycles
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K9S6408V0B-SSB0
K9S6408V0B
K9S6408V0B-SSB0
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Untitled
Abstract: No abstract text available
Text: K9F6408U0B-TCB0, K9F6408U0B-TIB0 Preliminary FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark July 17th 2000 Preliminary 1. Changed endurance : 1 million -> 100K program/erase cycles
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K9F6408U0B-TCB0,
K9F6408U0B-TIB0
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Untitled
Abstract: No abstract text available
Text: KM29U64000AT, KM29U64000AIT Preliminary FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1999 Preliminary The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
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KM29U64000AT,
KM29U64000AIT
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400F
Abstract: K9F6408U0B K9F6408U0B-TCB0 K9F6408U0B-TIB0 2903M
Text: K9F6408U0B-TCB0, K9F6408U0B-TIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark July 17th 2000 Preliminary Initial issue. 1. Changed endurance : 1 million -> 100K program/erase cycles 0.1 1. Changed don’t care mode in address cycles
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K9F6408U0B-TCB0,
K9F6408U0B-TIB0
400F
K9F6408U0B
K9F6408U0B-TCB0
K9F6408U0B-TIB0
2903M
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KM29U64000IT
Abstract: KM29U64000T 400F
Text: KM29U64000T, KM29U64000IT FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to cha nge the
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KM29U64000T,
KM29U64000IT
KM29U64000IT
KM29U64000T
400F
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smartmedia ecc
Abstract: No abstract text available
Text: Advanced Information SmartMediaTM K9S6408V0B-SSB0 Document Title 8M x 8 Bit SmartMedia TM Card Revision History Revision No. History 0.0 Initial issue Draft Date Remark July 17th 2000 Preliminary Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
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K9S6408V0B-SSB0
smartmedia ecc
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K9F6408Q0C
Abstract: K9F6408Q0C-B K9F6408U0C K9F6408U0C-B K9F6408U0C-QCB0
Text: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA
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K9F6408Q0C
K9F6408U0C
K9F6408U0C-Y
K9F6408U0C
9mmX11mm
63ball
48ball
K9F6408Q0C-D
K9F6408Q0C-B
K9F6408U0C-D
K9F6408Q0C
K9F6408Q0C-B
K9F6408U0C-B
K9F6408U0C-QCB0
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K9F6408U0C
Abstract: K9F6408U0C-tcb0 K9F6408 K9F6408Q0C K9F6408Q0C-B K9F6408Q0C-BCB0
Text: K9F6408U0C-TCB0,K9F6408U0C-TIB0 K9F6408Q0C-BCB0,K9F6408Q0C-BIB0 K9F6408U0C-BCB0,K9F6408U0C-BIB0 K9F6408Q0C : Preliminary FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Draft Date Remark Initial issue.
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K9F6408U0C-TCB0
K9F6408U0C-TIB0
K9F6408Q0C-BCB0
K9F6408Q0C-BIB0
K9F6408U0C-BCB0
K9F6408U0C-BIB0
K9F6408Q0C
K9F6408U0C-Y
K9F6408U0C
9mmX11mm
K9F6408
K9F6408Q0C
K9F6408Q0C-B
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY KM29V64000T Document Title 8M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S Param eter: 10ms Max. —> 4ms(Max.). 2. Removed reverse type package.
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KM29V64000T
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TS 4142
Abstract: ro1f
Text: Advance Information KM29V64001 TS/RS 8Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M+128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase
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KM29V64001
200us
71b4142
DD2447D
-TSOP2-400F
74tMAX
-TSQP2-400R
DD24471
TS 4142
ro1f
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A17-A22
Abstract: No abstract text available
Text: Advance Information KM29V64000TS/RS FLASH MEMORY 8 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : {512 + 16)bit x 8bit • Automatic Program and Erase
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OCR Scan
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KM29V64000TS/RS
200us
KM29V64000
P2-400F
10max]
-TSOP2-400R
A17-A22
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29V640
Abstract: No abstract text available
Text: KM29 V 64000 R Flash ELECTR ONICS 8Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : (512+ 16)bitx8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte
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OCR Scan
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PDF
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200us
KM29V64000R
0D31BÃ
29V640
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29V640
Abstract: No abstract text available
Text: Advance Information FLASH MEMORY KM29V64000T/R 8M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization The KM29V64000T/R is a 8M 8,388,608 x8 bit NAND - Memory Cell Array •Data Register Flash memory with a spare 256K(262,144)x8 bit.
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KM29V64000T/R
KM29V64000T/R
528-byte
200ns
29V640
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