lineage power car2548fp
Abstract: No abstract text available
Text: CAR2548FP Series 2500 Watt 48V Front End Power Supply Features: Leading Edge Power Density, 27W/in3 in 1U Form Factor I2C Serial Bus and PMBus Interface Full Features Status & Control Current, Voltage, AC OK, DC OK & Temperature OK , Active Current Sharing (Single Wire)
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CAR2548FP
CAR2548FPBCZO-1A
500W/48V
lineage power car2548fp
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Untitled
Abstract: No abstract text available
Text: CAR2512FP Series 2500 Watt +12V Front End Power Supply Features: Leading Edge Power Density, 27W/in3 in 1U Form Factor Works in Parallel with DC Input Models CAR2412DC I2C Serial Bus and PMBus Interface Up to 91.5% E ciency (90% at 20% Load) Active Current Sharing (Single Wire)
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CAR2512FP
CAR2412DC)
IEC-320
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PM 8910
Abstract: CAR2548FP EN55022-B ETS300 GR-1089-CORE IEC555 IEC68-2-27 2500w amp fci berg car2548
Text: CAR2548FP Series 2500 Watt 48V Front End Power Supply Features: ∎ Leading Edge Power Density, 27W/in3 in 1U Form Factor ∎ I2C Serial Bus and PMBus Interface ∎ Full Features Status & Control Current, Voltage, AC OK, DC OK & Temperature OK , ∎ Active Current Sharing (Single Wire)
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CAR2548FP
PM 8910
EN55022-B
ETS300
GR-1089-CORE
IEC555
IEC68-2-27
2500w amp
fci berg
car2548
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PDF
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Cherokee International Power
Abstract: power supply cherokee 48v 1u Rectifier 2500W
Text: CAR2548TN SERIES 2500 Watt -54V Rectifier Module Leading Edge Power Density, 27W/in3 in 1U Form Factor Constant Power Characteristic I2C Serial Bus and PMBus Interface Active Current Sharing Single Wire Microprocessor Based Design Allows for Automatic Fan Speed Control
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CAR2548TN
B-1301
Cherokee International Power
power supply cherokee 48v 1u
Rectifier 2500W
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PDF
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Untitled
Abstract: No abstract text available
Text: CAR1212DC 1200 Watt, +12V DC Input Front End by Lineage Power Features: Compact 1U High Pro le Constant Current Characteristic Visual LED Indicators Hot Plug / Redundant Parallel Operation with Active Load Sharing No Minimum Load Requirements Analog, I2C, and PMBuss control and monitoring
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CAR1212DC
CAR1212DC
48Vdc
-48Vdc
12Vout
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Si9710CY
Abstract: AN716 BCD15 Si9706DY Si9707DY Si9711CY Si9712DY si9710 9707D Siliconix An716
Text: AN716 Designing with Siliconix PC Card PCMCIA Power Interface Switches Teresa Hardy Introduction Innovation in portable computer design is driven today by the need for smaller, lighter, and more energy-efficient products. This has been the driving force behind the small
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AN716
Si9706DY/07DY
Si9706DY
Si9707DY
MAX783
MAX783
Si9710CY
AN716
BCD15
Si9711CY
Si9712DY
si9710
9707D
Siliconix An716
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PDF
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13765
Abstract: Si9710CY Siliconix An716 AN716 BCD15 MAX783 Si9706DY Si9707DY Si9711CY Si9712DY
Text: AN716 Siliconix Designing with Siliconix PC Card PCMCIA Power Interface Switches Teresa Hardy Introduction Innovation in portable computer design is driven today by the need for smaller, lighter, and more energyĆefficient products. This has been the driving
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AN716
Si9711CY
Si9712DY
13765
Si9710CY
Siliconix An716
AN716
BCD15
MAX783
Si9706DY
Si9707DY
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PDF
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AN716
Abstract: BCD15 MAX783 Si9706DY Si9707DY Si9710CY Si9711CY Si9712DY si9710
Text: AN716 Siliconix Designing with Siliconix PC Card PCMCIA Power Interface Switches Teresa Hardy Introduction Innovation in portable computer design is driven today by the need for smaller, lighter, and more energyĆefficient products. This has been the driving
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AN716
Si9711CY
Si9712DY
AN716
BCD15
MAX783
Si9706DY
Si9707DY
Si9710CY
si9710
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PDF
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Si9706DY
Abstract: s4 vishay AN716 BCD15 Si9707DY Si9711CY Si9712DY BCD-15 Si9707
Text: AN716 Vishay Siliconix Designing with Siliconix PC Card PCMCIA Power Interface Switches INTRODUCTION PC CARD POWER SWITCHING: AN OVERVIEW Innovation in portable computer design is driven today by the need for smaller, lighter, and more energy-efficient products.
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AN716
SI9706DY/07DY
Si9706DY
Si9707DY
MAX783
s4 vishay
AN716
BCD15
Si9711CY
Si9712DY
BCD-15
Si9707
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PDF
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Untitled
Abstract: No abstract text available
Text: APT6010JLL 600V 47A 0.100Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT6010JLL
OT-227
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PDF
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Untitled
Abstract: No abstract text available
Text: 600V 54A APT6010B2FLL APT6010LFLL APT6010B2FLL* APT6010LFLLG* *G POWER MOS 7 R Denotes RoHS Compliant, Pb Free Terminal Finish. FREDFET B2FLL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching
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APT6010B2FLL
APT6010LFLL
APT6010B2FLL*
APT6010LFLLG*
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PDF
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Untitled
Abstract: No abstract text available
Text: APT6010B2FLL APT6010LFLL 600V 54A 0.100Ω POWER MOS 7 R FREDFET B2FLL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT6010B2FLL
APT6010LFLL
O-264
O-264
O-247
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PDF
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009F
Abstract: APT6010B2LL APT6010LLL 6710 mosfet
Text: APT6010B2LL APT6010LLL 600V 54A 0.100Ω POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT6010B2LL
APT6010LLL
O-264
O-264
O-247
009F
APT6010B2LL
APT6010LLL
6710 mosfet
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PDF
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Untitled
Abstract: No abstract text available
Text: APT6010JFLL 600V 47A 0.100Ω POWER MOS 7 R FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT6010JFLL
OT-227
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PDF
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APT6010LFLLG
Abstract: APT6010B2FLL APT6010LFLL
Text: 600V 54A APT6010B2FLL APT6010LFLL APT6010B2FLL* APT6010LFLLG* *G POWER MOS 7 R Denotes RoHS Compliant, Pb Free Terminal Finish. FREDFET B2FLL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching
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APT6010B2FLL
APT6010LFLL
APT6010B2FLL*
APT6010LFLLG*
APT6010LFLLG
APT6010B2FLL
APT6010LFLL
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PDF
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APT6010LLLG
Abstract: APT6010B2LL APT6010LLL
Text: Ω 0.100Ω 600V 54A APT6010B2LL APT6010LLL APT6010B2LL* APT6010LLLG* *G POWER MOS 7 R Denotes RoHS Compliant, Pb Free Terminal Finish. MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching
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APT6010B2LL
APT6010LLL
APT6010B2LL*
APT6010LLLG*
O-264
APT6010LLLG
APT6010B2LL
APT6010LLL
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PDF
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Untitled
Abstract: No abstract text available
Text: APT6010JFLL 600V 47A 0.100Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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Original
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APT6010JFLL
OT-227
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PDF
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APT6010JLL
Abstract: No abstract text available
Text: APT6010JLL 600V 47A 0.100Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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Original
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APT6010JLL
OT-227
APT6010JLL
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PDF
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Untitled
Abstract: No abstract text available
Text: Ω 0.100Ω 600V 54A APT6010B2LL APT6010LLL APT6010B2LL* APT6010LLLG* *G POWER MOS 7 R Denotes RoHS Compliant, Pb Free Terminal Finish. MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching
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Original
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APT6010B2LL
APT6010LLL
APT6010B2LL*
APT6010LLLG*
O-264
O-247
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PDF
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APT6010JFLL
Abstract: No abstract text available
Text: APT6010JFLL 600V 47A 0.100Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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Original
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APT6010JFLL
OT-227
APT6010JFLL
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PDF
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Untitled
Abstract: No abstract text available
Text: Illl Œ5B1 I n t e r n a t i o n a l R e c tifie r International Rectifier .around-the-world manufacturing to serve worldwide needs. El Segundo, California © • Power MOSFETs, Control Integrated Circuits, government/military hi-rel devices, microelectronic relays
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OCR Scan
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PDF
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Si9707
Abstract: si9710
Text: Tem ic AN716 S e m i c o n d u c t o r s Designing with Siliconix PC Card PCMCIA Power Interface Switches T e re s a H a rd y Introduction Innovation in portable com puter design is driven today by the need for smaller, lighter, and more energy-efficient
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OCR Scan
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AN716
Si97X
Si9706DY/07DY
Si9706DY
Si9707DY
AX783
MAX783
Si9707
si9710
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PDF
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6710 mosfet
Abstract: No abstract text available
Text: PCMCIA POWER SWITCHING MATRIX SC1680 T E L 8 0 5 -4 9 8 -2 1 11 FAX :805-498-3804 W E B :http://w w w .sem tech.com February 2, 1998 DESCRIPTION FEATURES The S C 1680 is a pow er sw itching m atrix IC fo r PC C ard PCM CIA card sockets. It provides tw o voltage
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SC1680
SC1680
6710 mosfet
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PDF
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FAG 32 diode
Abstract: FAG 50 diode diode FAG 50 FAG40 irfag42 1000V power MOSFET reliability report G-263
Text: HE 0 I 4055455 GOGTZÖL fl | INTERNATIONAL Data Sheet No. PD-9.575A RECTIFIER INTERNATIONAL RECTIFIER IO R T -3 9 -1 3 REPETITIVE AVALANCHE AND dv/dt RATED IRFAG40 IRFAG4S HEXFET TRANSISTORS N-CHANNEL Product Summary 1000 Volt, 3.5 Ohm HEXFET TO-204AA TO-3 Hermetic Package
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OCR Scan
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T-39-13
O-204AA
G-269
IRFAG40,
IRFAG42
G-270
FAG 32 diode
FAG 50 diode
diode FAG 50
FAG40
1000V power MOSFET reliability report
G-263
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PDF
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