Untitled
Abstract: No abstract text available
Text: APT6010JFLL 600V 47A 0.100Ω POWER MOS 7 R FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT6010JFLL
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Untitled
Abstract: No abstract text available
Text: APT6010JLL 600V 47A 0.100Ω R POWER MOS 7 MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT6010JLL
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Untitled
Abstract: No abstract text available
Text: APT6010JFLL 600V 47A 0.100W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package
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APT6010JFLL
OT-227
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IBGT
Abstract: 100V 100A Mosfet DIODE PN junction diode DIODE 6790 MOSFET 50V 100A
Text: XI’AN IR-PERI Company .2 # 6 7 PRELIMINARY ]HALF-BRODGE ^ HEXFET Power MOSFET A - A - PAK Features ! Advanced Process Technology Ultra Low On-Resistance # Dynamic dv/dt Rating 175 C Operating Temperature o Fast Switching VDSS=100V
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100oC
125oC
IBGT
100V 100A Mosfet
DIODE PN junction diode
DIODE 6790
MOSFET 50V 100A
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Untitled
Abstract: No abstract text available
Text: APT6010JLL 600V 47A 0.100Ω R POWER MOS 7 MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT6010JLL
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Untitled
Abstract: No abstract text available
Text: APT6010JFLL 600V 47A 0.100Ω POWER MOS 7 R FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT6010JFLL
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Untitled
Abstract: No abstract text available
Text: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A
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IRFPS3810PbF
Super-247TM
Super-247
O-274AA)
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PWSN0008DC-A
Abstract: RJK0206DPA
Text: Preliminary Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200 Power Switching Rev.2.00 Apr 27, 2010 Features • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting
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RJK0206DPA
REJ03G1923-0200
PWSN0008DC-A
Chann9044
PWSN0008DC-A
RJK0206DPA
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RJK0206DPA
Abstract: No abstract text available
Text: Preliminary Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200 Power Switching Rev.2.00 Apr 27, 2010 Features • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting
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RJK0206DPA
REJ03G1923-0200
PWSN0008DC-A
current9044
RJK0206DPA
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Untitled
Abstract: No abstract text available
Text: APT6010B2LL APT6010LLL 600V 54A 0.100Ω R POWER MOS 7 MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT6010B2LL
APT6010LLL
O-264
O-247
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1548C
Abstract: APT6010B2FLL APT6010LFLL
Text: APT6010B2FLL APT6010LFLL 600V 54A 0.100Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT6010B2FLL
APT6010LFLL
O-264
O-264
O-247
1548C
APT6010B2FLL
APT6010LFLL
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Diode 188
Abstract: No abstract text available
Text: APT6010JLL 600V 47A 0.100W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses
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APT6010JLL
OT-227
Diode 188
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ZX95-6840C
Abstract: No abstract text available
Text: 2X Fundamental Voltage Controlled Oscillator Frequency Doubling ZX95-6840C+ 6740 to 6840 MHz Features • Frequency based on multiplication of Carrier Frequency • Low Phase Noise • Low Pushing • Low Pulling • 5V Tuning Voltage range • Protected by US patent 6,790,049
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ZX95-6840C+
GB956
ZX95-6840C-S+
2002/95/EC)
10KHz
100KHz
ZX95-6840C
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APT-6010
Abstract: No abstract text available
Text: APT6010B2FLL APT6010LFLL 600V 54A 0.100W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON
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APT6010B2FLL
APT6010LFLL
O-264
O-264
O-247
APT-6010
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Untitled
Abstract: No abstract text available
Text: 2X Fundamental Voltage Controlled Oscillator Frequency Doubling ROS-6840C-119+ 6740 to 6840 MHz Features • frequency based on multiplication of carrier frequency • low phase noise • low pushing • low pulling • 5V tuning voltage range • aqueous washable
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ROS-6840C-119+
CK1113
2002/95/EC)
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Untitled
Abstract: No abstract text available
Text: 2X Fundamental Voltage Controlled Oscillator Frequency Doubling ZX95-6840C+ 6740 to 6840 MHz Features • Frequency based on multiplication of carrier frequency • Low phase noise • Low pushing • Low pulling • 5V tuning voltage range • Protected by US patent 6,790,049
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ZX95-6840C+
GB956
ZX95-6840C-S+
2002/95/EC)
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ROS-6840C-119
Abstract: MCL 10138
Text: 2X Fundamental Voltage Controlled Oscillator Frequency Doubling ROS-6840C-119+ 6740 to 6840 MHz Features • Frequency based on multiplication of Carrier Frequency • Low Phase Noise • Low Pushing • Low Pulling • 5V Tuning Voltage range • Aqueous washable
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ROS-6840C-119+
CK1113
2002/95/EC)
10KHz
100KHz
ROS-6840C-119
MCL 10138
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Untitled
Abstract: No abstract text available
Text: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A
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IRFPS3810PbF
Super-247â
Rati789
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2n0605
Abstract: d 132 smd code diode INFINEON PART MARKING Q67040-S4245 2N060 INFINEON PART MARKING to263 TRANSISTOR SMD MARKING CODE ag ANPS071E SPB80N06S2-05 SPP80N06S2-05
Text: SPP80N06S2-05 SPB80N06S2-05 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode RDS on max. SMD version 4.8 mΩ • 175°C operating temperature ID 80 A • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated
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SPP80N06S2-05
SPB80N06S2-05
Q67040-S4245
2N0605
Q67040-S4255
BSPP80N06S2-05,
BSPB80N06S2-05
2n0605
d 132 smd code diode
INFINEON PART MARKING
Q67040-S4245
2N060
INFINEON PART MARKING to263
TRANSISTOR SMD MARKING CODE ag
ANPS071E
SPB80N06S2-05
SPP80N06S2-05
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2n0605
Abstract: No abstract text available
Text: SPP80N06S2-05 SPB80N06S2-05 OptiMOS =Power-Transistor Product Summary Feature 55 VDS N-Channel RDS on Enhancement mode max. SMD version ID 175°C operating temperature P- TO263 -3-2 Avalanche rated V 4.8 m 80 A P- TO220 -3-1 dv/dt rated Type SPP80N06S2-05
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SPP80N06S2-05
SPB80N06S2-05
Q67040-S4245
Q67040-S4255
2N0605
BSPP80N06S2-05,
BSPB80N06S2-05
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6790
Abstract: TO274 IRFPS3810 TO-274
Text: PD - 93912B IRFPS3810 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.009Ω G ID = 170A S Description
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93912B
IRFPS3810
Super-247TM
5M-1994.
O-274AA
6790
TO274
IRFPS3810
TO-274
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Untitled
Abstract: No abstract text available
Text: PD - 93912B IRFPS3810 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.009Ω G ID = 170A S Description
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93912B
IRFPS3810
Super-247â
5M-1994.
O-274AA
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Untitled
Abstract: No abstract text available
Text: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A
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IRFPS3810PbF
Super-247â
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2n0605
Abstract: BSPP80N06S2-05 SPP80N06S2-05 d 132 smd code diode sm smd diode marking
Text: SPP80N06S2-05 SPB80N06S2-05 OptiMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated VDS 55 RDS on max. SMD version 4.8 m ID 80 A P- TO263 -3-2 Type Package Ordering Code
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SPP80N06S2-05
SPB80N06S2-05
Q67040-S4245
2N0605
Q67040-S4255
BSPP80N06S2-05,
BSPB80N06S2-05
2n0605
BSPP80N06S2-05
SPP80N06S2-05
d 132 smd code diode
sm smd diode marking
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