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    68877 Search Results

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    68877 Price and Stock

    Wakefield-Vette 3688771

    HANDLE IV BOTTOM W/OUT OFF 1/2HP
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    Wakefield-Vette 3688770

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    Elesa SPA 68877

    CAM LATCH PANEL MNT S STEEL
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    SICK AG 1068877

    INCREMENTAL ENCODER
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    TE Connectivity 926887-7

    UNIV.M-N-L.PIN
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    68877 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3390 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0208-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60% min. f = 836 MHz • Compact package capable of surface mounting


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    2SK3390 REJ03G0208-0400 PLSS0003ZA-A PDF

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    Abstract: No abstract text available
    Text: FX30KMJ-06 High-Speed Switching Use Pch Power MOS FET REJ03G1446-0200 Previous: MEJ02G0276-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : –60 V rDS(ON) (max) : 54 mΩ ID : –30 A Integrated Fast Recovery Diode (TYP.) : 55 ns


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    FX30KMJ-06 REJ03G1446-0200 MEJ02G0276-0101) PRSS0003AB-A O-220FN) PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: M51955A,B/M51956A,B Voltage Detecting, System Resetting IC Series REJ03D0777-0300 Rev.3.00 Sep 18, 2007 Description M51955A,B/M51956A,B are semiconductor integrated circuits for resetting of all types of logic circuits such as CPUs, and has the feature of setting the detection voltage by adding external resistance.


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    M51955A B/M51956A REJ03D0777-0300 PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: HSD226 Silicon Schottky Barrier Diode for High Speed Switching REJ03G0603-0400 Rev.4.00 Feb 06, 2007 Features • Low Power consumption Low reverse leak current and high speed (Low capacitance). • Lineup of Environmental friendly Halogen free type (HSD226-N)


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    HSD226 REJ03G0603-0400 HSD226-N) HSD226-N PUSF0002ZB-A PDF

    Untitled

    Abstract: No abstract text available
    Text: HD74HCT640 Octal Bus Transceivers with inverted 3-state outputs Octal Bus Transceivers (with 3-state outputs) REJ03D0672–0300 (Previous ADE-205-562A) Rev.3.00 Mar 30, 2006 Description The HD74HCT640 has one active low enable input (G), and a direction control (DIR). When the DIR input is high,


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    HD74HCT640 REJ03D0672â ADE-205-562A) HD74HCT640 PDF

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    Abstract: No abstract text available
    Text: FS10ASJ-2 High-Speed Switching Use Nch Power MOS FET REJ03G1408-0200 Previous: MEJ02G0061-0101 Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 4 V VDSS : 100 V rDS(ON) (max) : 0.19 Ω ID : 10 A Integrated Fast Recovery Diode (TYP.) : 95 ns


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    FS10ASJ-2 REJ03G1408-0200 MEJ02G0061-0101) PRSS0004ZA-A PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: TBB1017 Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier REJ03G1469-0100 Rev.1.00 Aug 07, 2006 Features • • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Very useful for total tuner cost reduction.


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    TBB1017 REJ03G1469-0100 PTSP0006JA-A TBB1017 PDF

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    Abstract: No abstract text available
    Text: HD74HCT620, HD74HCT623 Octal Bus Transceivers with inverted 3-state outputs Octal Bus Transceivers (with 3-state outputs) REJ03D0671–0200 (Previous ADE-205-561) Rev.2.00 Mar 30, 2006 Description This octal bus transceiver is designed for asynchronous two-way communication between data buses. The control


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    HD74HCT620, HD74HCT623 REJ03D0671â ADE-205-561) PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3214 Silicon N Channel MOS FET High Speed Power Switching REJ03G1093-0400 Rev.4.00 May 15, 2006 Features • Low on-resistance RDS = 130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A


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    2SK3214 REJ03G1093-0400 PRSS0004AC-A O-220AB) PDF

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    Abstract: No abstract text available
    Text: RQA0003DNS Silicon N-Channel MOS FET REJ03G0584-0300 Rev.3.00 Oct 12, 2006 Features • High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 19 dB, PAE = 65% f = 520 MHz • Small Outline Package (WSON0303-2: 3.0 x 3.0 × 0.8mm) Outline


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    RQA0003DNS REJ03G0584-0300 WSON0303-2: PWSN0002ZA-A WSON0303-2> A0003â PDF

    Untitled

    Abstract: No abstract text available
    Text: HSB83YP Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0545-0200 Rev.2.00 Jan 07, 2009 Features • High reverse voltage. VR = 250V • CMPAK- 4 package which has two devices parallel connection, is suitable for high density surface mounting.


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    HSB83YP REJ03G0545-0200 HSB83YPTL HSB83YPTR PTSP0004ZB-A REJ03G0545-0200 PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: HD74LS390 Dual Decade Counters REJ03D0485-0400 Rev.4.00 May 10, 2006 This circuit contains eight master-slave flip-flops and additional gating to implement two individual four-bit counters. The HD74LS390 incorporates dual divide-by-two and divide-by-five counters, which can be used to implement cycle


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    HD74LS390 REJ03D0485-0400 HD74LS390 divide-by-100. HD74LS390P DILP-16 PRDP001 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0300 Rev.3.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. f = 836 MHz • Compact package capable of surface mounting


    Original
    2SK3391 REJ03G0209-0300 PLZZ0004CA-A PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF