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    Abstract: UT9Q512K8 SRAM SAMSUNG UT8Q512K8 36E-4 weibull test data 19E4
    Text: Single Event Effects Qualification UT8Q512K8 RQ02 Lot 6ZVL04 4Mbit SRAM 7/21/03 Craig Hafer 719-594-8319 [email protected] SUMMARY-Single event effects qualification testing was performed on the UTMC 4Mbit SRAM, (Samsung Rev C die), Lot 6ZVL04, at the Lawrence Berkeley Laboratory using


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    PDF UT8Q512K8 6ZVL04 6ZVL04, 88-inch 5E-11 9E-10 3E-09 7E-08 0E-11 SRAM Cross References UT9Q512K8 SRAM SAMSUNG UT8Q512K8 36E-4 weibull test data 19E4