transistor 6B
Abstract: 6B transistor thermocouple to frequency AN-541
Text: a AN-541 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • 781/329-4700 • World Wide Web Site: http://www.analog.com Proper System Grounding Techniques for 6B Series Systems INTRODUCTION The 6B series of digital signal conditioning modules,
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AN-541
RS-485
RS-232C
transistor 6B
6B transistor
thermocouple to frequency
AN-541
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Untitled
Abstract: No abstract text available
Text: Packaging Information www.vishay.com Vishay General Semiconductor Packaging Information PACKAGING ORDERING CODE PREFERRED ANTI-STATIC PACKAGE CODE PACKAGE CODE 51 52, 52T P 2D P 2E 2M 2N 53 54 P 5A, 5AT P 5B, 5BT P 5CA P 57, 57T P 6A P 6B P 9A, 9AT P 61, 61T
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DO-214AA
/DO-215AA
DO-218AB
481-C
18-Mar-14
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skiip 613 gb
Abstract: semikron skiip 613 642GB120-208 B2HKF semikron skiip 513 gb semikron skch b2hkf semikron skt 140 semikron B6U 690 930 SEMISTACK IGBT Semikron SKB 15/12
Text: back zurück Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2
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skiip 613 gb
Abstract: semikron skiip 613 skiip 513 gb semikron B6U 690 930 semikron skch b2hkf Semikron B2HKF SEMISTACK IGBT semikron skiip 513 gb B2HKF semikron B6C
Text: Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2
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semtech rectifier bridge
Abstract: No abstract text available
Text: SC6BA2, SC6BA4, SC6BA6, SC6BA8 Standard Recovery 3-Phase Full Wave Bridge Rectifiers POWER DISCRETES Description Features Standard recovery 30A three phase full wave bridge rectifier. Low forward voltage drop Low reverse leakage Black anodized aluminum case
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Mil-PRF-19500/483
Mil-PRF-19500/483.
semtech rectifier bridge
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full wave BRIDGE RECTIFIER
Abstract: 400S MIL-PRF-19500/483 HRSC6BA6 6B bRIDGE Rectifier semtech three phase
Text: SC6BA2, SC6BA4, SC6BA6, SC6BA8 Standard Recovery 3-Phase Full Wave Bridge Rectifiers POWER DISCRETES Description Features Standard recovery 30A three phase full wave bridge rectifier. Low forward voltage drop Low reverse leakage Black anodized aluminum case
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Mil-PRF-19500/483
Mil-PRF-19500/483.
full wave BRIDGE RECTIFIER
400S
MIL-PRF-19500/483
HRSC6BA6
6B bRIDGE Rectifier
semtech three phase
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MIL-PRF-19500/483
Abstract: SC6BA4 SC6BA6
Text: SC6BA2, SC6BA4, SC6BA6, SC6BA8 Standard Recovery 3-Phase Full Wave Bridge Rectifiers POWER DISCRETES Description Features Standard recovery 30A three phase full wave bridge rectifier. Low forward voltage drop Low reverse leakage Black anodized aluminum case
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Mil-PRF-19500/483
Mil-PRF-19500/483.
MIL-PRF-19500/483
SC6BA4
SC6BA6
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . RECTIFIERS VSSAF3L45 and VSSAF5L45 45 V TMBS Rectifiers in Low-Profile SlimSMA Package KEY BENEFITS • High current density –– 3 A and 5 A forward currents –– SlimSMA DO-221AC package with typical height of 0.95 mm
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VSSAF3L45
VSSAF5L45
DO-221AC
JS709A
VSSAF5L45-M3/6A
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Untitled
Abstract: No abstract text available
Text: V ishay I n tertech n olo g y, I n c . AND TEC I INNOVAT O L OGY VSSAF3L45 and VSSAF5L45 N HN Rectifiers O 19 62-2012 Rectifiers - High Forward Current 45 V TMBS Rectifiers in Low-Profile SlimSMA Package Key Benefits • High current density –– 3 A and 5 A forward currents
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VSSAF3L45
VSSAF5L45
DO-221AC
JS709A
areawithoutVSSAF5L45-M3/6A
DO-221AC
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . Rectifiers - Standard Rectifiers with ESD Capability I INNOVAT AND TEC O L OGY SE20AFJ and SE30AFJ N HN Diodes O 19 62-2012 600 V SE20AFJ and SE30AFJ Standard Rectifiers with ESD Capability in Low-Profile SlimSMA Package
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SE20AFJ
SE30AFJ
SE30AFJ
AEC-Q101
17-Aug-12
SE30AFB
SE30AFD
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JESD 201 class 1A
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . Diodes SE20AFJ and SE30AFJ 600 V SE20AFJ and SE30AFJ Standard Rectifiers with ESD Capability in Low-Profile SlimSMA Package KEY BENEFITS • • • • • • • • High current density ESD capability
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SE20AFJ
SE30AFJ
SE30AFJ
AEC-Q101
SE20AFJ
17-Aug-12
SE30AFB
JESD 201 class 1A
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Untitled
Abstract: No abstract text available
Text: SE20AFB thru SE20AFJ www.vishay.com Vishay General Semiconductor Surface Mount ESD Capability Rectifiers FEATURES • Very low profile - typical height of 0.95 mm SlimSMA • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop, low leakage
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SE20AFB
SE20AFJ
J-STD-020,
DO-221AC
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SE30AFB, SE30AFD, SE30AFG, SE30AFJ www.vishay.com Vishay General Semiconductor Surface Mount ESD Capability Rectifiers FEATURES SlimSMA • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop, low leakage
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SE30AFB,
SE30AFD,
SE30AFG,
SE30AFJ
DO-221AC
J-STD-020,
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: VSSAF5L45 www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES • Very low profile - typical height of 0.95 mm TMBS SlimSMATM • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency
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VSSAF5L45
J-STD-020,
AEC-Q101
DO-221AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SE30A
Abstract: SE30AFJ
Text: SE30AFB thru SE30AFJ www.vishay.com Vishay General Semiconductor Surface Mount ESD Capability Rectifiers FEATURES • Very low profile - typical height of 0.95 mm SlimSMA • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop, low leakage
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SE30AFB
SE30AFJ
DO-221AC
J-STD-020,
AEC-Q101
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
SE30A
SE30AFJ
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Untitled
Abstract: No abstract text available
Text: VSSAF56 www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES • Very low profile - typical height of 0.95 mm TMBS • Ideal for automated placement SlimSMATM • Trench MOS Schottky technology • Low power losses, high efficiency
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VSSAF56
J-STD-020,
DO-221AC
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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igbt uses in rectifier
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information Hybrid Power Module M H P M 6B 20E60D 3 Integrated Power Stage for 230 VAC Motor Drives Motorola Preferred Device This VersaPower module Integrates a 3-phase inverter and 3-phase rectifier in a single convenient package. It is designed for
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MHPM6B15E60D3
MHPM6B20E60D3
HPM6B2OE60D3
igbt uses in rectifier
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6BW4
Abstract: 12BW4 tube 12BW4 capacitor 100 nf 100 volts
Text: T6± SYLVANIA TYPE 6B W 4 12BW4 F U L L W A V E R E C T IF IE R MECHANICAL DATA T-6 K B u lb . M iniature Button, 9-Pin
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12BW4
6BW4
12BW4 tube
12BW4
capacitor 100 nf 100 volts
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Drive circuit for IGBT using IR2130
Abstract: Schematic Drive circuit for IGBT using IR2130 SMD LD3 smd diode h15 AN-985 two IR2130 12 output single phase IR2130 MP816 ac motor speed control circuit ir2130 h1n1
Text: International ion R e c tifie r D e sig n T ips DT 93-6B INTERNATIONAL RECTIFIER • APPLICATIONS ENG. • 233 KANSAS ST. • ELSEGUNDO, CA. 90245 • TEL 310 322-3331 • FAX (310)322-3332 MINIATURIZATION OF THE POWER ELECTRONICS FOR MOTOR DRIVES By G erry Limjuco & Dana Wilhelm
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T0-220
IRGBC30KD2-S)
Drive circuit for IGBT using IR2130
Schematic Drive circuit for IGBT using IR2130
SMD LD3
smd diode h15
AN-985
two IR2130 12 output
single phase IR2130
MP816
ac motor speed control circuit ir2130
h1n1
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6by5Ga
Abstract: 6by5 6BY5-GA tube 6BY5 6by5G 30-FRAME 525-LINE no2u
Text: 6B Y 5-G A FULL-WAVE VACUUM RECTIFIER For T e l e v i s i o n Damper S e r v i c e _ GENERAL DATA Electrical: Heater, for Unipotential Cathodes: V o l t a g e . 6 . 3 . ac or dc volts C u r r e n t . 1 . 6 . a^p
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B7-119)
525-line,
30-frame
CE-8608
6by5Ga
6by5
6BY5-GA
tube 6BY5
6by5G
525-LINE
no2u
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Untitled
Abstract: No abstract text available
Text: International IÔR Recti fi 6 f PD -5.05 6B PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK G A 150T S 6 0 U Ultra-Fast Speed IGBT Features • G en eratio n 4 IG BT tech nology V c e s = 600 V • U ltraFast: O ptim ize d for high operating fre q u e n cie s 8 -4 0 kH z In hard sw itching, >200
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xenon tube
Abstract: "Rectifier Tube" 6B Rectifier transformer 9 volts transformer center tap
Text: EL 6B H A L F-W A V E RECTIFIER TUBE T A N T A L U M AN OD E AND X E N O N GAS F IL L IN G M ax im u m R a te d Anode C u rre n t D -c . M e te r V a lu e -C o n tin u o u s D - c . M e t e r V a l u e - O v e r l o a d l e s s t h a n 10 s e c . A v erag in g T im e
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A4-81
xenon tube
"Rectifier Tube"
6B Rectifier
transformer 9 volts
transformer center tap
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marking G6g
Abstract: g6g ic bridge rectifier ic case MARKING A1 ts6b05g marking CODE GA TS6B01G TS6B07G
Text: i S TAIWAN SEMICONDUCTOR TS6B01G -TS6B07G Single Phase 6.0 Amps. Glass Passivated Bridge Rectifiers RoHS COMPLIANCE -.14713.7 :iS 3 f3 .S f Features <> U L R e c o g n iz e d F ile # E-960D5 G la s s p a s s iv a te d ju n c tio n + - R e lia b le lo w c o st co n stru ctio n
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TS6B01G
TS6B07G
E-96005
2000Vrms
i17Jh
45r7FM---F-Â
marking G6g
g6g ic
bridge rectifier ic
case MARKING A1
ts6b05g
marking CODE GA
TS6B07G
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5Y4 tube
Abstract: 1N2637 6av4 1N1239 17AX4 3B28 5r4 tube TUBE 5y3 866a RECTIFIER 1N2632
Text: MICROSEMI CORP/ R P H IME D I tllbOMQ 0000031 ? | MICRO A M CAOSEM COMPANY T - ¿ % -OS' Special High Voitage Rectifier Assemblies Door Bell Type Also available in FAST RECOVERY versions, T r r ; PART NO. 300A Surge J650-16 J650-17 J650-18 J650-19 200A Surge1
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J650-16
J650-17
J650-18
J650-19
J650-1
J650-2
J650-3
J650-4
J650-5
1N2389
5Y4 tube
1N2637
6av4
1N1239
17AX4
3B28
5r4 tube
TUBE 5y3
866a RECTIFIER
1N2632
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