transistor 6bw
Abstract: 3BW 02 R047 ERJ6BQ code 6BW ERJ6R ERJ8BW
Text: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ BW : 0402, 0603, 0805, 1206 ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2512 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2BW, 3BW, 6BW, 8BW
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transistor 6bw
Abstract: 6BW 16 6bw 01 R047 1206- 0,25 ERJ6RQ ERJ8BW
Text: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2512 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3R, 3B, 6R, 6B, 8R, 8B, 14R, 14B, 12R, 1TR ERJ L03, L06, L08, L14, L12,
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ERJL03,
ERJL14,
transistor 6bw
6BW 16
6bw 01
R047
1206- 0,25
ERJ6RQ
ERJ8BW
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Untitled
Abstract: No abstract text available
Text: Product specification KC817-25 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 ● High current gain. 1 ● Low collector-emitter saturation voltage 0.55 ● High collector current. +0.1 1.3-0.1 +0.1 2.4-0.1 ● For general AF applications. 2
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KC817-25
OT-23
KC807
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type NPN General Purpose Transistors KC817-25 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 ● High current gain. 1 ● Low collector-emitter saturation voltage 0.55 ● High collector current. +0.1 1.3-0.1 +0.1 2.4-0.1 ● For general AF applications.
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KC817-25
OT-23
KC807
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transistor 6bw
Abstract: transistor l1w R 1206 resistor ERJ8BW 6BW 16 resistor E24 R047 8R8B ERJ6R ERJ6RQ
Text: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2512 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3R, 3B, 6R, 6B, 8R, 8B, 14R, 14B, 12R, 1TR ERJ L03, L06, L08, L14, L12,
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ERJL03,
ERJL14,
transistor 6bw
transistor l1w
R 1206 resistor
ERJ8BW
6BW 16
resistor E24
R047
8R8B
ERJ6R
ERJ6RQ
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ERJ6RQ
Abstract: 6BW 16 ERJ6R ERJ8BW
Text: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2512 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3R, 3B, 6R, 6B, 8R, 8B, 14R, 14B, 12R, 1TR ERJ L03, L06, L08, L14, L12,
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ERJL03,
ERJL14,
ERJ6RQ
6BW 16
ERJ6R
ERJ8BW
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marking code 6BW
Abstract: 6BW MARKING 6BG TVS marking 6BN marking 6Cn marking 6ah SMA6J14A 6cg marking code SMA6J12 tvs 6ae
Text: SMA6J5.0 thru 40A Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AC SMA Cathode Band 0.065 (1.65) Stand-off Voltage 5.0 to 40V Peak Pulse Power 600W 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) t c u rod P New Mounting Pad Layout 0.066 MIN. (1.68 MIN.)
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DO-214AC
DO-214AC
MIL-STD-750,
marking code 6BW
6BW MARKING
6BG TVS
marking 6BN
marking 6Cn
marking 6ah
SMA6J14A
6cg marking code
SMA6J12
tvs 6ae
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marking code 6BW
Abstract: marking 6Cn marking 6bs 6cg marking code tr 6bp marking 6ap 6Af surface mount marking 6CP 6BW MARKING 6az 17
Text: SMA6J5.0 thru 40A Vishay Semiconductors New Product formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AC SMA Stand-off Voltage 5.0 to 40V Peak Pulse Power 600W Cathode Band 0.065 (1.65) 0.110 (2.79) 0.100 (2.54)
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DO-214AC
07-May-02
marking code 6BW
marking 6Cn
marking 6bs
6cg marking code
tr 6bp
marking 6ap
6Af surface mount
marking 6CP
6BW MARKING
6az 17
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6BW 74
Abstract: 6BW 81 6BW 48 6BW 83 6BW 68 6bw 95 UG25T7200L4DR 6BW 87 6BW 94
Text: UG25T7200L4DR Data sheets can be downloaded at www.unigen.com Solutions For A Real Time World TM 2G Bytes 256M x 72 bits SYNCHRONOUS DRAM MODULE 240 Pin DDR2 SDRAM Register & PLL DIMM w/ECC based on 36 pcs 128M x 4 DDR2 SDRAM 8K Refresh FEATURES ABSOLUTE MAXIMUM RATINGS
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UG25T7200L4DR
240-pin,
PC2-3200
PC2-4200
PC2-5300
18-compatible)
D0-D17
A0-A13
D18-D35
D0-D35
6BW 74
6BW 81
6BW 48
6BW 83
6BW 68
6bw 95
UG25T7200L4DR
6BW 87
6BW 94
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6BW 81
Abstract: 6BW 74 6BW 83 6BW MARKING
Text: UG25T7200L4DR Data sheets can be downloaded at www.unigen.com 2G Bytes 256M x 72 bits SYNCHRONOUS DRAM MODULE 240 Pin DDR2 SDRAM Register & PLL DIMM w/ECC based on 36 pcs 128M x 4 DDR2 SDRAM 8K Refresh FEATURES ABSOLUTE MAXIMUM RATINGS • • • • •
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UG25T7200L4DR
UG25T7200L4DR
PC3200)
PC4200)
PC5300)
PC6400)
400Mps@
533Mps@
667Mps@
6BW 81
6BW 74
6BW 83
6BW MARKING
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6BW 48
Abstract: MARKING 6BW 6BW MARKING
Text: UG12T7200K4DR Data sheets can be downloaded at www.unigen.com Solutions For A Real Time World TM 1G Bytes 128M x 72 bits SYNCHRONOUS DRAM MODULE 240 Pin DDR2 SDRAM Register & PLL DIMM w/ECC based on 36 pcs 64M x 4 DDR2 SDRAM 8K Refresh FEATURES ABSOLUTE MAXIMUM RATINGS
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UG12T7200K4DR
240-pin,
PC2-3200
PC2-4200
PC2-5300
18-compatible)
D0-D17
A0-A13
D18-D35
D0-D35
6BW 48
MARKING 6BW
6BW MARKING
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Untitled
Abstract: No abstract text available
Text: _ LT1097 / T L i n C A ß TECHNOLOGY Low Cost, Low Power Precision O p Amp F€ ATU R € S D C S C R IP T IO n 50/tV Max • Offset Voltage ■ Offset Voltage Drift 1.0/jV/°CMax ■ Bias Current 250pA Max 250pA Max ■ Offset Current
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LT1097
LT1097
50/tV
250pA
560/1A
115dB
10/iV
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6BG marking DIODE
Abstract: diode 6BG
Text: SMA6J High junction temperature Transil Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low clamping voltage versus standard series
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DO-214AC)
883G-Method
6BG marking DIODE
diode 6BG
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SMBJ100D
Abstract: No abstract text available
Text: SMBJ5.0D thru SMBJ188D www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • ± 3.5 %, very tight VBR tolerance • Available in uni-directional
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SMBJ188D
DO-214AA
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SMBJ100D
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6bw 95
Abstract: 6BG marking DIODE marking code 6BW 6ba diode SMA6J12 marking 6BN 6bg diode 6BW 81 6BW 48 SMA6J15A
Text: SMA6J High junction temperature Transil Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low clamping voltage versus standard series
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DO-214AC)
883G-Method
6bw 95
6BG marking DIODE
marking code 6BW
6ba diode
SMA6J12
marking 6BN
6bg diode
6BW 81
6BW 48
SMA6J15A
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transistor 6bw
Abstract: 3 PIN 6Bw transistor 6Bw transistor 6bw 12 transistor 6BW MARKING TOP marking 6BW
Text: r j urm TECHNOLOGY LTC125Q Very Low Noise Zero-Drift Bridge Amplifier FCfflURCS D CSCRIPTIOn • Very Low Noise: 0.75nVp.p Typ, 0.1 Hz to 10Hz ■ DC to 1Hz Noise Lower Than OP-07 ■ Full Output Swing into 1k Load ■ Offset Voltage: 10 iV Max ■ Offset Voltage Drift: 50nV/°C Max
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75nVp
OP-07
110dB
115dB
LTC125Q
LTC1250
LTC1250
transistor 6bw
3 PIN 6Bw transistor
6Bw transistor
6bw 12 transistor
6BW MARKING
TOP marking 6BW
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marking code 6BW
Abstract: ERJA1 ERJB2
Text: 2014 CATALOG Fixed Resistors LQGXVWULDOSDQDVRQLFFRP Fixed Resistors CONTENTS Product Item Type Safety Precautions Common precautions for Fixed Resistors Rectangular Type Surface Mount Resistors Attenuator Power Type 2 Thick Film Chip Resistors
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dd417
Abstract: No abstract text available
Text: 'd a t a b427525 GÜM17SE ST2 « N E C E NEC sh eet MOS INTEGRATED CIRCUIT f juPD42S4260L, 424260L 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The /¿PD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs with optional fast page mode
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b427525
M17SE
juPD42S4260L
424260L
16-BIT,
PD42S4260L,
424260L
/1PD42S4260L.
PD42S4260L
//PD424260L
dd417
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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FJJ141/A
2305D
FJJ181/A
2305E/848
FJJ191/A
FJL101/A
CD2306D
FJY101/A
2306E/832
CD2307/944
3TE445
2N3303
ECC88
TAA*310
B9D TRANSISTOR
BYY32
GEX36/7
Ferranti zs70
6ej7
3n159
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TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
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DG211.
DG300
DG308
DG211
TCA965 equivalent
ULN2283
capacitor 473j 100n
UAF771
transistor GDV 65A
pbd352303
cm2716
TAA2761
TAA4761
ULN2401
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panasonic inverter dv 707 manual
Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
Text: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594
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