6N100 Search Results

6N100 Result Highlights (4)

Part	Manufacturer	Description
R5F72866N100FA#U2	Renesas Electronics Corporation	32-bit Microcontrollers
R5F72866N100FP#U2	Renesas Electronics Corporation	32-bit Microcontrollers
R5F72856N100FP#U2	Renesas Electronics Corporation	32-bit Microcontrollers
10127397-06N1000LF	Amphenol Communications Solutions	PwrBlade® ULTRA Connector System, Power Connectors, Header, 2HP Right Angle, Through Hole

6N100 Price and Stock

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Walsin Technology Corporation 1206N100J102CT CAP CER 10PF 1KV C0G/NP0 1206
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1206N100J102CT	Digi-Reel	8,992		1	1 $0.23 10 $0.152 100 $0.0766 1000 $0.04897 10000 $0.04897	Buy Now
	1206N100J102CT	Cut Tape	8,992		1	1 $0.23 10 $0.152 100 $0.0766 1000 $0.04897 10000 $0.04897	Buy Now
	1206N100J102CT	Reel	8,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.04045	Buy Now
TME	1206N100J102CT				4,000	1 - 10 - 100 - 1000 - 10000 $0.0131	Get Quote
Avnet Asia	1206N100J102CT			14 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Susumu Co Ltd RG3216N-1001-W-T1 RES SMD 1K OHM 0.05% 1/4W 1206
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RG3216N-1001-W-T1	Cut Tape	4,000		1	1 $1.28 10 $0.894 100 $0.604 1000 $0.44392 10000 $0.44392	Buy Now
	RG3216N-1001-W-T1	Reel	4,000		1,000	1 - 10 - 100 - 1000 $0.43312 10000 $0.43312	Buy Now
	RG3216N-1001-W-T1	Digi-Reel	4,000		1	1 $1.28 10 $0.894 100 $0.604 1000 $0.44392 10000 $0.44392	Buy Now
Mouser Electronics	RG3216N-1001-W-T1		791			1 $1.25 10 $0.877 100 $0.581 1000 $0.44 10000 $0.44	Buy Now
Littelfuse Inc IXFH26N100X MOSFET N-CH 1000V 26A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH26N100X	Tube	260		1	1 $17.44 10 $17.44 100 $11.46833 1000 $17.44 10000 $17.44	Buy Now
RS	IXFH26N100X	Bulk		8 Weeks	30	1 - 10 - 100 $17.18 1000 $17.18 10000 $17.18	Get Quote
Littelfuse Inc IXTP6N100D2 MOSFET N-CH 1000V 6A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP6N100D2	Tube	238		1	1 $8.91 10 $8.91 100 $8.91 1000 $4.77924 10000 $4.77924	Buy Now
Newark	IXTP6N100D2	Bulk	290		1	1 $6.38 10 $6.38 100 $5.89 1000 $5.1 10000 $4.79	Buy Now
Susumu Co Ltd RG3216N-1004-B-T5 RES SMD 1M OHM 0.1% 1/4W 1206
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RG3216N-1004-B-T5	Cut Tape	225		1	1 $0.85 10 $0.597 100 $0.4078 1000 $0.26433 10000 $0.26433	Buy Now
	RG3216N-1004-B-T5	Digi-Reel	225		1	1 $0.85 10 $0.597 100 $0.4078 1000 $0.26433 10000 $0.26433	Buy Now
Mouser Electronics	RG3216N-1004-B-T5		3,684			1 $0.85 10 $0.601 100 $0.404 1000 $0.273 10000 $0.262	Buy Now
Newark	RG3216N-1004-B-T5	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.334	Buy Now

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6N100 Datasheets (13)

Part	Manufacturer	Description	Datasheet Type	PDF
6N100F	IXYS	Power MOSFETs	Original	PDF
6N100W-1	Inmet	ATTENUATOR	Scan	PDF
6N100W-10	Inmet	ATTENUATOR	Scan	PDF
6N100W-10F	Inmet	ATTENUATOR	Scan	PDF
6N100W-1M	Inmet	ATTENUATOR	Scan	PDF
6N100W-20M	Inmet	ATTENUATOR	Scan	PDF
6N100W-3	Inmet	ATTENUATOR	Scan	PDF
6N100W-30	Inmet	ATTENUATOR	Scan	PDF
6N100W-30F	Inmet	ATTENUATOR	Scan	PDF
6N100W-3F	Inmet	ATTENUATOR	Scan	PDF
6N100W-40F	Inmet	ATTENUATOR	Scan	PDF
6N100W-6	Inmet	ATTENUATOR	Scan	PDF
6N100W-6M	Inmet	ATTENUATOR	Scan	PDF

6N100 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM	Original	PDF	6N100Q 6N100Q O-247 O-268 O-268AA
6N100Q Abstract: IXFT6N100Q Text: HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q VDSS IXFT 6N100Q ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	6N100Q TAB72 O-268 IXFT6N100Q
Untitled Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25	Original	PDF	6N100Q 6N100Q O-247 O-268 O-268
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q VDSS IXFT 6N100Q ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	6N100Q O-247 O-268
6N90 Abstract: N100 Text: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 6N90 900 V VDGR T J = 25°C to 150°C; RGS = 1 MW 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 6 A IDM TC = 25°C, pulse width limited by TJM	Original	PDF	6N100 O-247 O-204 10Source 100ms 6N100 6N90 N100
6N90 Abstract: IXFH6N100 Text: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 6N90 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 6 A IDM TC = 25°C, pulse width limited by TJM	Original	PDF	6N100 O-247 O-204 6N100 10Source 6N90 IXFH6N100
Untitled Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM	Original	PDF	6N100Q 6N100Q O-247 O-268 Sour100 O-268AA
6N90 Abstract: N100 6n10 6n100 Text: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Symbol Test Conditions VDSS T J = 25°C to 150°C 6N90 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 6 A IDM T C = 25°C, pulse width limited by T JM	Original	PDF	6N100 O-247 O-204 6N90 N100 6n10 6n100
6N100F Abstract: transistor ixfh application note 125OC ixfh6n100f Text: Power MOSFETs F-Class: MegaHertz Switching IXFH 6N100F VDSS IXFT 6N100F ID25 RDS on = 1000 V = 6A = 1.9 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings	Original	PDF	6N100F O-247 125oC 728B1 transistor ixfh application note 125OC ixfh6n100f
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 6N90 900 V VDGR T J = 25°C to 150°C; RGS = 1 MW 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 6 A IDM TC = 25°C, pulse width limited by TJM	Original	PDF	6N100 O-247 O-204 10Source 100ms 6N100
6N100F Abstract: No abstract text available Text: Advanced Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFH 6N100F VDSS IXFT 6N100F ID25 RDS on = 1000 V = 6A = 1.9 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr TO-247 AD (IXFH)	Original	PDF	6N100F O-247
MOSFET 6N100 Abstract: 6n90 equivalent 6N90 transistor ixfh application note D-68623 Text: IXFH 6N90 IXFM 6N90 IXFH 6N100 IXFM 6N100 VDSS HiPerFETTM Power MOSFET IXFH/FM 6N90 900 V IXFH/FM 6N100 1000 V ID25 RDS on trr 1.8 Ω 250 ns 2.0 Ω 250 ns 6A 6A N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions	Original	PDF	6N100 6N100 O-247 D-68623 MOSFET 6N100 6n90 equivalent 6N90 transistor ixfh application note
Untitled Abstract: No abstract text available Text: ATTENUATORS Type N, up to 6 GHz, 100 Watts SPECIFICATIONS: Models: XN100W-XX, XN100W-XXF & XN100W-XXM Electrical: Frequency Range Standard Freq. Values Standard dB Values Attenuation Accuracy 3 & 6 dB 10 dB 20 & 30 dB 40 dB VSWR Max. DC - 1.5 GHz ±0.50 dB	Original	PDF	XN100W-XX, XN100W-XXF XN100W-XXM 2N100W-03F 6N100W-20FM XN100W-XXY XN100W-ATT:
BNC 7044 Abstract: mini Audio 5709 7043 BNC INMET 64671 26AH TN180-50W 5205/AU attenuation 3dB DC 18GHz BNC Matching T CA 5210 PL F/5057 Text: Short Form Catalog Microwave, Wireless and Broadband Components www.aeroflex-inmet.com Attenuators Adapters Bias Tees DC Blocks Gain Equalizers Terminations Table of Contents Company Profile . Attenuators .	Original	PDF

6N60E Abstract: 10N100E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 6N100E 16N40E Text: ir TMOS TM OS Power MOSFETs Plastic Packages — TO-247 TO-247 CASE 340F-03 MTW PREFIX — Isolateci TO-218 Table 4 — N-Channel TO-247 VDss (Volts) Min RDS(on) I d (Ohms) (Amps) Max Device 1000 800 600 2 3 M TW 6N100E Table 5 — N- and P-Channel Isolated TO-218	OCR Scan	PDF	O-247 O-218 340F-03 340B-03 O-247 6N100E 10N100E 6N60E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 16N40E
IXFH6N100Q Abstract: No abstract text available Text: DIXYS AdvancedTechnical Information HiPerFET Power MOSFETs Q Class IXFH 6N100Q IXFT 6N100Q Voss V oo „ DS on Test Conditions Maximum Ratings T j =25°C to150°C 1000 V T j = 25°C to 150°C; Ros = 1 M fl 1000 V Continuous ±20 V V os« Transient ±30	OCR Scan	PDF	6N100Q to150 O-247 O-268 IXFH6N100Q
Untitled Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by M TW 6N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet 6N100E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 W ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 1000 VOLTS	OCR Scan	PDF	6N100E/D MTW6N100E 340K-01
h6n100 Abstract: h6n90 Text: n ix Y S HiPerFET Power MOSFETs IXFH /IXFM 6N90 IXFH / IXFM 6N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family V DSS ^D25 900 V 1000 V 6A 6A p DS on 1.8 Q 2.0 £2 yo 69 Symbol Test Conditions Maximum Ratings v DSS T j =25°C to 150°C	OCR Scan	PDF	6N100 6N100 IXFH6N100 IXFM6N100 h6n100 h6n90
TDA0161 equivalent Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:	OCR Scan	PDF
1N100W-1 Abstract: 3N100W-3F 6N100W-20M Text: ATTENUATORS up to 6 GHz TYPE N 100 Watts MODELS: XN1 OOW -XX, XN 100W -X X F & IN M E T X N 100W -XXM SPECIFICATIONS: Electrical: Frequency Range _DC - 6.0 GHz Standard Freq. Values _1.5, 3 & 6 GHz Standard dB Values_ _1,3, 6, 10, 20, 30 & 40* dB	OCR Scan	PDF	MIL-STD-o48 1N100W-1 3N100W-3F 6N100W-20M XN100W-ATT;
6N100E Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TM O S E -FE T ™ P ow er Field E ffe c t T ran sisto r T O -2 4 7 W ith Is o la te d M ounting H ole TMOS POWER FET 6.0 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate T h is h ig h v o lta g e M O S F E T u s e s a n a d v a n c e d te rm in a tio n	OCR Scan	PDF
mosfet 4400 Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,	OCR Scan	PDF	100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
Untitled Abstract: No abstract text available Text: v DSS HiPerFET Power MOSFETs ix f h /ix f m g n m IXFH/IXFM 6 N100 Symbol Test Conditions v ^ Voa« Tj = 25°C to 150°C; Vos Continuous ±20 V Transient ±30 V 6 A vesM •» ' dm dv/dt Tc Maximum Ratings = 25“C to 150°C 1 f RGS=1 M£2J \ 6N90 900 V	OCR Scan	PDF	O-247 6N100
dual diode TO254AA 600V Abstract: No abstract text available Text: OM 1N100SA OM 5N100SA OM1N100ST QM 3N100SA OM6N1QOSA OM3N1QOST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V. Up To 6 A m p . N - C h a n n e l M O S F E T In H e r m e t i c Metal P a c k a g e FEATURES • • • • • Isolated Hermetic Metal Package	OCR Scan	PDF	1N100SA 5N100SA OM1N100ST 3N100SA MIL-19500, 10secs. O-257AA O-254AA 205Crawtord dual diode TO254AA 600V

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6N100 Search Results

6N100 Result Highlights (4)

6N100 Price and Stock

Walsin Technology Corporation 1206N100J102CT

Susumu Co Ltd RG3216N-1001-W-T1

Littelfuse Inc IXFH26N100X

Littelfuse Inc IXTP6N100D2

Susumu Co Ltd RG3216N-1004-B-T5

6N100 Datasheets (13)

6N100 Datasheets Context Search

Untitled

6N100Q

Untitled

Untitled

6N90

6N90

Untitled

6N90

6N100F

Untitled

6N100F

MOSFET 6N100

Untitled

BNC 7044

6N60E

IXFH6N100Q

Untitled

h6n100

TDA0161 equivalent

1N100W-1

6N100E

mosfet 4400

Untitled

dual diode TO254AA 600V