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    6Z SOT Search Results

    6Z SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    6Z SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking 6z

    Abstract: diode 6z sot-23 LMBF170LT1 LMBF170LT1G LMBF170LT3 LMBF170LT3G marking 6Z SOT23
    Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LMBF170LT1 LMBF170LT1 3 FEATURE 1 ƽ Pb-Free Package is available. 2 SOT-23 DEVICE MARKING AND ORDERING INFORMATION Device Shipping 6Z 3000/Tape&Reel 6Z Pb-Free 3000/Tape&Reel 6Z 10000/Tape&Reel 6Z (Pb-Free)


    Original     		PDF LMBF170LT1 OT-23 3000/Tape 10000/Tape LMBF170LT1G LMBF170LT3 marking 6z diode 6z sot-23 LMBF170LT1 LMBF170LT1G LMBF170LT3 LMBF170LT3G marking 6Z SOT23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LMBF170LT1G LMBF170LT1G 3 FEATURE 1 ƽ Pb-Free Package is available. 2 SOT-23 DEVICE MARKING AND ORDERING INFORMATION Device Marking Drain 3 Shipping LMBF170LT1G 6Z 3000/Tape&Reel LMBF170LT3G 6Z 10000/Tape&Reel


    Original     		PDF LMBF170LT1G OT-23 3000/Tape LMBF170LT3G 10000/Tape

    code marking 6z sot-23

    Abstract: TO236 footprint Power MOSFET N-Channel sot-23 6Z SOT23 sot-23 MARKING CODE 6Z marking "td" sot23 marking 6Z SOT23 TO-236 footprint MMBF170LT1 MMBF170LT3G
    Text: MMBF170LT1 Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features •ăPb-Free Packages are Available 500 mA, 60 V RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage VDGS 60 Vdc Gate-Source Voltage - Continuous


    Original     		PDF MMBF170LT1 OT-23 MMBF170LT1/D code marking 6z sot-23 TO236 footprint Power MOSFET N-Channel sot-23 6Z SOT23 sot-23 MARKING CODE 6Z marking "td" sot23 marking 6Z SOT23 TO-236 footprint MMBF170LT1 MMBF170LT3G

    code marking 6z sot-23

    Abstract: 50Winput MMBF170LT1G sot-23 MARKING CODE 6Z
    Text: MMBF170LT1 Power MOSFET 500 mA, 60 V N−Channel SOT−23 Features http://onsemi.com • Pb−Free Packages are Available 500 mA, 60 V RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60 Vdc Drain−Gate Voltage VDGS 60 Vdc


    Original     		PDF MMBF170LT1 OT-23 OT-23 code marking 6z sot-23 50Winput MMBF170LT1G sot-23 MARKING CODE 6Z

    code marking 6z sot-23

    Abstract: marking 6Z SOT23 MMBF170LT1G TO236 footprint MMBF170LT1 MMBF170LT3 MMBF170LT3G MOSFET N SOT-23 sot-23 MARKING CODE 6Z marking CODE 6z
    Text: MMBF170LT1 Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features http://onsemi.com •ăPb-Free Packages are Available 500 mA, 60 V RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage VDGS 60 Vdc Gate-Source Voltage


    Original     		PDF MMBF170LT1 OT-23 MMBF170LT1/D code marking 6z sot-23 marking 6Z SOT23 MMBF170LT1G TO236 footprint MMBF170LT1 MMBF170LT3 MMBF170LT3G MOSFET N SOT-23 sot-23 MARKING CODE 6Z marking CODE 6z

    code marking 6z sot-23

    Abstract: diode 6z sot-23 TO-236-3 TO236 footprint Power MOSFET N-Channel sot-23 marking 6Z MOSFET SOT-23 sot-23 MARKING CODE 6Z to-236 MARKING QG 6 PIN
    Text: MMBF170LT1 Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features http://onsemi.com •ăPb-Free Packages are Available 500 mA, 60 V RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage VDGS 60 Vdc Gate-Source Voltage


    Original     		PDF MMBF170LT1 OT-23 MMBF170LT1/D code marking 6z sot-23 diode 6z sot-23 TO-236-3 TO236 footprint Power MOSFET N-Channel sot-23 marking 6Z MOSFET SOT-23 sot-23 MARKING CODE 6Z to-236 MARKING QG 6 PIN

    Untitled

    Abstract: No abstract text available
    Text: MMBF170L, NVBF170L Power MOSFET 500 mA, 60 V, N−Channel SOT−23 Features • NVBF Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant


    Original     		PDF MMBF170L, NVBF170L OT-23 AEC-Q101 OT-23 MMBF170LT1/D

    marking 6Z

    Abstract: MMBF170LT3G MMBF170LT1 MMBF170LT1G MMBF170LT3 sot-23 MARKING CODE 6Z 6Z SOT23
    Text: MMBF170LT1 Power MOSFET 500 mA, 60 V N−Channel SOT−23 Features http://onsemi.com • Pb−Free Packages are Available 500 mA, 60 V RDS on = 5 W MAXIMUM RATINGS Symbol Value Unit Drain−Source Voltage Rating VDSS 60 Vdc Drain−Gate Voltage VDGS 60 Vdc


    Original     		PDF MMBF170LT1 OT-23 MMBF170LT1/D marking 6Z MMBF170LT3G MMBF170LT1 MMBF170LT1G MMBF170LT3 sot-23 MARKING CODE 6Z 6Z SOT23

    code marking 6z sot-23

    Abstract: MVBF170LT1G
    Text: MMBF170LT1, MVBF170LT1 Power MOSFET 500 mA, 60 V N−Channel SOT−23 Features • AEC Q101 Qualified − MVBF170LT1 • These Devices are Pb−Free and are RoHS Compliant http://onsemi.com 500 mA, 60 V RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit


    Original     		PDF MMBF170LT1, MVBF170LT1 OT-23 MVBF170LT1 OT-23 MMBF170LT1/D code marking 6z sot-23 MVBF170LT1G

    Untitled

    Abstract: No abstract text available
    Text: MMBF170LT1, MVBF170LT1 Power MOSFET 500 mA, 60 V N−Channel SOT−23 Features • AEC Q101 Qualified − MVBF170LT1 • These Devices are Pb−Free and are RoHS Compliant http://onsemi.com 500 mA, 60 V RDS on = 5 W MAXIMUM RATINGS Symbol Value Unit Drain−Source Voltage


    Original     		PDF MMBF170LT1, MVBF170LT1 MMBF170LT1/D

    NVBF170LT1

    Abstract: No abstract text available
    Text: MMBF170LT1, NVBF170LT1 Power MOSFET 500 mA, 60 V, N−Channel SOT−23 Features • NVBF Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant


    Original     		PDF MMBF170LT1, NVBF170LT1 OT-23 AEC-Q101 OT-23 MMBF170LT1/D

    Untitled

    Abstract: No abstract text available
    Text: MMBF170 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance   Low Gate Threshold Voltage   Low Input Capacitance  Fast Switching Speed   Low Input/Output Leakage   Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2


    Original     		PDF MMBF170 AEC-Q101 J-STD-020 DS30104

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Power MOSFET LMBF170LT1 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage VDGS 60 Vdc Gate–Source Voltage – Continuous – Non–repetitive tp ≤ 50 ms VGS VGSM ±20 ±40


    Original     		PDF LMBF170LT1 OT-23 LMBF170LT1 LMBF170LT1-4/4

    MMBF170LT1

    Abstract: MMBF170LT3
    Text: MMBF170LT1 Power MOSFET 500 mAmps, 60 Volts N–Channel SOT–23 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage VDGS 60 Vdc Gate–Source Voltage – Continuous – Non–repetitive tp ≤ 50 ms VGS VGSM


    Original     		PDF MMBF170LT1 r14525 MMBF170LT1/D MMBF170LT1 MMBF170LT3

    MMBF170 rohs

    Abstract: top marking 6z DS-30104 DS30104 SOT23 k6z
    Text: MMBF170 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 1


    Original     		PDF MMBF170 J-STD-020 MIL-STD-202, DS30104 MMBF170 rohs top marking 6z DS-30104 SOT23 k6z

    AE fet sot-23

    Abstract: MMBF170LT1
    Text: MOTOROLA Order this document by MMBF170LT1/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor MMBF170LT1 DRAIN 3 N–Channel  1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage VDGS 60


    Original     		PDF MMBF170LT1/D MMBF170LT1 236AB) MMBF170LT1/D* AE fet sot-23 MMBF170LT1

    2802S

    Abstract: r0201 D29/SEKI ST 22
    Text: 0002/81/9 'INiad N-lfrHSS 'SOlIlNNId IHSItfdlSMfrHBNdOlNNODNSiQlItGH XDS\SlN3NDdWDGVZ I dO T 133HS| 3N0N :31VDS SOTTI A3U b86T-S>TA ISNV M id DIU.L3W03D QNV SNOISN3WIQ 13ycft]31NI 'ON 'QMQ 3ZIS - is - ESZ'Z 96'SS 69 >S ZKES S IT S 88'OS I9'6b t>£'8t> ¿OYb


    OCR Scan     		PDF SBH41 SBH41-NBPB-D_ HEflDERC\CDNNTDP\BH41\CTRAIGHT PIWM1105. CEH41-N /18/200B 2802S r0201 D29/SEKI ST 22

    702 sot23

    Abstract: No abstract text available
    Text: SOT-23 TRANSISTORS continued TMOS FETs The following is a listing of small-signal surface mount TMOS FETs which exhibit low Ros(on) characteristics. Pinout: 1-Gate, 2-Source, 3-Drain Device Switching Time V GS(th) R DS(on) @ I d Marking Ohm mA BVqss Volts


    OCR Scan     		PDF OT-23 MMBF170LT1 BSS123LT1 2N7002LT1 702 sot23

    t6661

    Abstract: ft960 marking 6Z SOT23 702 sot23 sot 23 70.2 sot-23 mosfet Marking SA s 6z sot223 marking marking 6Z 25 marking 6z sot
    Text: SMALL-SIGNAL TMOS MOSFETs continued CASE 318-07 (TO-236AB) SOT-23 STYLE 22 CASE 318E-04 (TO-261AA) SOT-223 STYLE 6 Table 18 — Surface Mount TMOS MOSFETs The follow ing is a listing of sm all-sig na l surface m ount T M O S MO SFETs. Case 318-07 — TO-236AB (SOT-23) — N-Channel


    OCR Scan     		PDF O-236AB) OT-23 318E-04 O-261AA) OT-223 O-236AB OT-23) MMBF170LT1 BSS123LT1 2N7002LT1 t6661 ft960 marking 6Z SOT23 702 sot23 sot 23 70.2 sot-23 mosfet Marking SA s 6z sot223 marking marking 6Z 25 marking 6z sot

    transistor 6z

    Abstract: No abstract text available
    Text: MMBF170LT1 CASE 318-07, STYLE 21 SOT-23 TO-236AB M AXIM UM RATINGS Rating Symbol Value Drain-Source Voltage vdss 60 Vdc Drain-Gate Voltage V d GS 60 Vdc Gate-Source Voltage Vg s ±20 Vdc Drain Current — Continuous Pulsed 'd 'd m 0.5 0.8 Ade Unit D rain


    OCR Scan     		PDF MMBF170LT1 OT-23 O-236AB) 2N7000 transistor 6z

    bk p36

    Abstract: 1024x1 static ram 16x4-Bit 4710B 4720B 4725B F16K3 F16K4 F16K5 M40272
    Text: •n fO «i MOS 4096x1 1024x4 4096x1 - M40272 16,384x1 CO ro 4096x1 -fck 4096x1 cn Item o 0 o Organization s o (O Ô o 3 a Description Access Time ns (Max Cycle Time ns (Min) Power Dissipation mW (Max) S A H > z o 2 > o o m CO 2 m 5 o X k k k k k oo O 03


    OCR Scan     		PDF 1024x4 F2114171 4096x1 M40272 M40273 M40274 M40275 bk p36 1024x1 static ram 16x4-Bit 4710B 4720B 4725B F16K3 F16K4 F16K5

    "Philips Semiconductors" BAX DO-35

    Abstract: B2V86-2V0 b2v86 BZV87-3V24 ba315 BA220
    Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes LOW-VOLTAGE STABISTORS OVERVIEW VF typ. V 1 mA 5 mA at lF: Vr V RRM ' frm 10 mA max. max. max. sF typ. rdiH max. (V) (V) (mA) (mV/K)


    OCR Scan     		PDF DO-35 OD80C BAX14 BA220 BA315 BA314 BZV86-1V4 BZV86-2V0 BZV86-2V6 BZV86-3V2 "Philips Semiconductors" BAX DO-35 B2V86-2V0 b2v86 BZV87-3V24

    13.8 8w zener diode

    Abstract: "MARKING CODE" 3Y zener marking sot323 code SEMICONDUCTOR 12w marking code sot 23 6Y marking code marking code z2
    Text: Central" CMSZDA2V4 THRU CMSZDA47V Semiconductor Corp. SURFACE MOUNT DUAL SILICON ZENER DIODE 2.4 VOLTS THRU 47 VOLTS 250mW DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSZDA2V4 Series silicon dual zener diode is a highly quality voltage regulator, connected in a


    OCR Scan     		PDF CMSZDA47V 250mW OT-323 T-323 20-February 13.8 8w zener diode "MARKING CODE" 3Y zener marking sot323 code SEMICONDUCTOR 12w marking code sot 23 6Y marking code marking code z2

    BF546

    Abstract: marking 6k sot-23 package BF5459L F5 sot223 BFJ177 F5 marking sot223 MLL34 M6A sot-23 6z sot223 marking Cross Reference sot
    Text: MOTOROLA SC 4bE T> • XSTRS/R F b 3 b 7 2 S 4 D O' îb S Ot 2 « f l O T t — 3 SO T-23 T R A N S IS T O R S (continued) Unipolar (Field Effect) Transistors (JFETs) RF JFETs Pinout: 1-Drain, 2-Source, 3-Gate NF Device Marking Typ (dB) f (MHz) Min (mmhos)


    OCR Scan     		PDF BFJ309L BFJ310L BF5486L BF5457L BF5459L OT-23 OT-143 MLL-34 OT-223 SO-16 BF546 marking 6k sot-23 package F5 sot223 BFJ177 F5 marking sot223 MLL34 M6A sot-23 6z sot223 marking Cross Reference sot