smd marking VB
Abstract: 70.2 marking smd ZS1033D ZS1012U smd mark 70.2 smd marking 702 smd mark 751 ZS1015U ZS1039U ZS1022U
Text: SMD VRD Dimensions Marking Symbol Mark Part number S Mark 012 5AA 0.1 max. ZS 1 033 D- T 4.3Ϯ0.2 Taping Nil : Bi-Polar U : Uni-Polar D : High-Reverse voltage type Break down voltage Steady state power SMD type Symbol Mark 2.5Ϯ0.2 1.5Ϯ0.2 Symbol Mark 2.0Ϯ0.3
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Original
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2/50s)
8/20s)
ZS1012D
ZS1015D
ZS1018D
ZS1022D
ZS1027D
ZS1033D
ZS1039D
ZS1047D
smd marking VB
70.2 marking smd
ZS1033D
ZS1012U
smd mark 70.2
smd marking 702
smd mark 751
ZS1015U
ZS1039U
ZS1022U
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PDF
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smd mark 70.2
Abstract: 820sa 70.2 marking smd 1000S smd 414 smd mark 751
Text: SMD VRD Dimensions Marking Symbol Mark 1.5Ϯ0.2 Part number 2.5Ϯ0.2 Symbol Mark S Mark Cathode Mark Part No. S Mark 012 5AA 0.1 max. ZS 1 033 D-T 4.3Ϯ0.2 Taping Nil : Bi-Polar U : Uni-Polar D : High-Reverse voltage type Break down voltage Steady state power
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Original
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10/1000s)
2/50s)
8/20s)
8/20s
10/1000s
25C50C
ZS1012D
ZS1015D
ZS1018D
ZS1022D
smd mark 70.2
820sa
70.2 marking smd
1000S
smd 414
smd mark 751
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PDF
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smd marking VB
Abstract: 70.2 marking smd
Text: SMD VRD Dimensions Marking Symbol Mark 1.5Ϯ0.2 Part number 2.5Ϯ0.2 Symbol Mark S Mark Cathode Mark Part No. S Mark 012 5AA 0.1 max. ZS 1 033 D-T 4.3Ϯ0.2 Taping Nil : Bi-Polar U : Uni-Polar D : High-Reverse voltage type Break down voltage Steady state power
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Original
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10/1000s)
2/50s)
8/20s)
8/20s
10/1000s
25C50C
ZS1012D
ZS1015D
ZS1018D
ZS1022D
smd marking VB
70.2 marking smd
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PDF
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70.2 marking smd
Abstract: marking L2 TB0211 marking 211 TB0211A transistor smd marking 94 marking c2 diode marking L2 diode 70.2 L marking
Text: TAI-SAW TECHNOLOGY CO., LTD. No.3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: [email protected] Web: www.taisaw.com Low-Loss 70 MHz IF SAW Filter SMD 13.3x6.5 mm Model No.: TB0211A
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Original
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TB0211A
70.2 marking smd
marking L2
TB0211
marking 211
TB0211A
transistor smd marking 94
marking c2 diode
marking L2 diode
70.2 L marking
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PDF
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TB0211A
Abstract: No abstract text available
Text: TAI-SAW TECHNOLOGY CO., LTD. No.3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: [email protected] Web: www.taisaw.com Low-Loss 70 MHz IF SAW Filter SMD 13.3x6.5 mm Model No.: TB0211A
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Original
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TB0211A
TB0211A
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PDF
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TB1027A
Abstract: No abstract text available
Text: TAI-SAW TECHNOLOGY CO., LTD. No.3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: [email protected] Web: www.taisaw.com Low-Loss 70 MHz IF SAW Filter SMD 13.3x6.5 mm Model No.: TB1027A
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Original
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TB1027A
TB1027A
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PDF
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TB1028A
Abstract: No abstract text available
Text: TAI-SAW TECHNOLOGY CO., LTD. No.3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: [email protected] Web: www.taisaw.com Low-Loss 70 MHz IF SAW Filter SMD 13.3x6.5 mm Model No.: TB1028A
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Original
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TB1028A
TB1028A
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PDF
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02D07
Abstract: 205101B as32 S1365
Text: SAW Bandpass Filter 205101B Features z IF bandpass filter z High attenuation z 50 ohms single-ended operation z SMD Package 13.3mm x 6.5mm × 1.6mm Package Dimension 13.30±0.2 9 8 7.62±0.1 7 7 11 11 2 3 5 5 4 12 2.54±0.1 1 10 9 1.50±0.1 205101B 12 8 6
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Original
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205101B
02D073A
S1365
300mm/min
NR3006-AS32
02D07
205101B
as32
S1365
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PDF
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204153C
Abstract: S1365
Text: SAW Bandpass Filter 204153C 1. Features z IF Bandpass Filter z Low-Loss Filter z Single-Ended Operation z Ceramic Surface Mount Device SMD Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device (ESD) 2. Package Dimensions
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Original
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204153C
ITF04A001
S1365
NJ3003-CS02
204153C
S1365
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PDF
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S1365
Abstract: No abstract text available
Text: SAW Bandpass Filter 206162B 1. Features z IF Bandpass Filter z Low-Loss Filter z Single-Ended Operation z Ceramic Surface Mount Device SMD Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device (ESD) 2. Package Dimensions
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Original
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206162B
ITF04A001
S1365
NI2009-CS03
S1365
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PDF
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an 17830 A
Abstract: an 17830 120471 S1365 70.2 marking smd
Text: SAW Bandpass Filter 206160B 1. Features z IF Bandpass Filter z Low-Loss Filter z Single-Ended Operation z Ceramic Surface Mount Device SMD Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device (ESD) 2. Package Dimensions
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Original
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206160B
ITF04A001
S1365
NJ3004-CS02
an 17830 A
an 17830
120471
S1365
70.2 marking smd
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PDF
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agilent 2478
Abstract: S1365 101036
Text: SAW Bandpass Filter 206144B 1. Features z IF Bandpass Filter z Low-Loss Filter z Single-Ended Operation z Ceramic Surface Mount Device SMD Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device (ESD) 2. Package Dimensions
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Original
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206144B
ITF04A001
S1365
NJ3002-CS03
agilent 2478
S1365
101036
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PDF
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206139b
Abstract: S1365
Text: SAW Bandpass Filter 206139B 1. Features z IF Bandpass Filter z Low-Loss Filter z Single-Ended Operation z Ceramic Surface Mount Device SMD Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device (ESD) 2. Package Dimensions
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Original
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206139B
ITF04A001
S1365
NI0036-CS03
206139b
S1365
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PDF
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smo 365
Abstract: 206164b S1365
Text: SAW Bandpass Filter 206164B 1. Features z IF Bandpass Filter z Low-Loss Filter z Single-Ended Operation z Ceramic Surface Mount Device SMD Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device (ESD) 2. Package Dimensions
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Original
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206164B
ITF04A001
S1365
NI2045-CS03
smo 365
206164b
S1365
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PDF
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transistor MAR 819
Abstract: transistor MAR 543 sl2 357 BFS17
Text: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4
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OCR Scan
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BFS17/BFS17R
BFS17
BFS17R
26-Mar-97
transistor MAR 819
transistor MAR 543
sl2 357
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PDF
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BFS17
Abstract: transistor BFs 18 BFS17R marking E1
Text: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter
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Original
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BFS17
BFS17R
D-74025
transistor BFs 18
marking E1
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PDF
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"marking E1"
Abstract: BFS17 BFS17R sot 23 transistor 70.2
Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4
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Original
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BFS17/BFS17R
BFS17
BFS17R
D-74025
17-Apr-96
"marking E1"
sot 23 transistor 70.2
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PDF
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2066
Abstract: S1365
Text: SAW Bandpass Filter 274351B 1. Features IF Bandpass Filter Low-Loss Filter Single-Ended Operation Ceramic Surface Mount Device SMD Package Maximum Storage Temperature Range : -40 ✗ ~ 85 ✗ Electrostatics Sensitive Device (ESD) 2. Package Dimensions ✄✆
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Original
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274351B
S1365
NJ4011-CS0
NJ4011-CS01
2066
S1365
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PDF
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BFS17
Abstract: BFS17R BFS17W BFS17 E1
Text: BFS17/BFS17R/BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280
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Original
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BFS17/BFS17R/BFS17W
BFS17
BFS17R
BFS17W
D-74025
20-Jan-99
BFS17 E1
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PDF
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Untitled
Abstract: No abstract text available
Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2
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Original
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BFS17/BFS17R/BFS17W
BFS17
BFS17R
BFS17W
D-74025
20-Jan-99
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PDF
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VRD Z2015
Abstract: ZS1012U marking z2u 685 smd mark Z2015 VRD Smd zd 153 marking ZS1 ZD022 Z208 SUPPRESSOR z2047
Text: VRD TRANSIENT VOLTAGE SUPPRESSOR VRD is a transient voltage suppressor used for protecting electric circuits from surge voltage and thus preventing breakdown. VRD has superior surge suppression characteristics, such as extremely fast response time, very low clamping voltage,
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Original
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ZS1012D
ZS1015D
ZS1018D
ZS1022D
ZS1027D
ZS1033D
ZS1039D
ZS1047D
8/20s
10/1000s
VRD Z2015
ZS1012U
marking z2u
685 smd mark
Z2015 VRD
Smd zd 153
marking ZS1
ZD022
Z208
SUPPRESSOR z2047
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PDF
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"marking E1"
Abstract: BFS17R BFS17 d 1556 transistor
Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2 9510527 3 3 BFS17 Marking: E1
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Original
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BFS17/BFS17R
BFS17
BFS17R
D-74025
16-Oct-97
"marking E1"
d 1556 transistor
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PDF
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"marking E1"
Abstract: BFS17 BFS17R BFS17W
Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2
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Original
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BFS17/BFS17R/BFS17W
BFS17
BFS17R
BFS17W
D-74025
20-Jan-99
"marking E1"
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PDF
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70.2 marking smd npn Transistor
Abstract: transistor smd 661 752 702 TRANSISTOR smd SOT23 smd transistor marking j5 smd marking 271 Sot 704 TRANSISTOR smd SOT23 SMD IC marking 632 SOT23 marking 828 SOT MARKING 213 transistor smd marking NA sot-23
Text: BFS17 / BFS17R / BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • High power gain SMD package e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 3 1 SOT-23 Applications
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Original
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BFS17
BFS17R
BFS17W
2002/95/EC
2002/96/EC
OT-23
OT-323
OT-23
70.2 marking smd npn Transistor
transistor smd 661 752
702 TRANSISTOR smd SOT23
smd transistor marking j5
smd marking 271 Sot
704 TRANSISTOR smd SOT23
SMD IC marking 632
SOT23 marking 828
SOT MARKING 213
transistor smd marking NA sot-23
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PDF
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