4N70F
Abstract: No abstract text available
Text: HY4N70T / HY4N70FT 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS ON =2.8W@VGS=10V, ID=2A Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current
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HY4N70T
HY4N70FT
O-220AB
ITO-220AB
2002/95/EC
O-220AB
ITO-220AB
MIL-STD-750
HY4N70T
4N70T
4N70F
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PDF
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Untitled
Abstract: No abstract text available
Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY4N70D / HY4N70M 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=2.8W@VGS=10V, ID=2A
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HY4N70D
HY4N70M
O-252
O-251
2002/95/EC
O-252
O-251
250mA
125oC
-55oC
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PDF
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Untitled
Abstract: No abstract text available
Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY4N70D / HY4N70M 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=2.8W@VGS=10V, ID=2A
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Original
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HY4N70D
HY4N70M
O-252
O-251
2002/95/EC
O-252
O-251
250mA
125oC
-55oC
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PDF
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Untitled
Abstract: No abstract text available
Text: AP04N60H-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test BVDSS 700V ▼ Fast Switching Characteristic RDS ON 2.8Ω ▼ Simple Drive Requirement ID D 4A G ▼ RoHS Compliant & Halogen-Free
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AP04N60H-H-HF
AP04N60
265VAC
O-252
100us
100ms
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PDF
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GE04N70B
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2005/01/04 REVISED DATE : GE04N70B BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 650/700V 2.4 4A Description The GE04N70B series are specially designed as main switching devices for universal 90~265VAC off-line
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GE04N70B
650/700V
GE04N70B
265VAC
O-220
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Untitled
Abstract: No abstract text available
Text: AP04N60S-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 700V RDS ON 2.8Ω ID 4A G ▼ RoHS Compliant & Halogen-Free
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AP04N60S-H-HF
AP04N60
265VAC
O-263
100us
100ms
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PDF
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Untitled
Abstract: No abstract text available
Text: AP04N60S-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test BVDSS 700V ▼ Fast Switching Characteristic RDS ON 2.8Ω ▼ Simple Drive Requirement ID D 4A G ▼ RoHS Compliant & Halogen-Free
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Original
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AP04N60S-H-HF
AP04N60
265VAC
O-263
100us
100ms
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PDF
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AP04N60
Abstract: No abstract text available
Text: AP04N60H-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 700V RDS ON 2.8Ω ID 4A G ▼ RoHS Compliant & Halogen-Free
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Original
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AP04N60H-H-HF
AP04N60
265VAC
O-252
100us
100ms
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PDF
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Untitled
Abstract: No abstract text available
Text: AP04N70BI-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test BVDSS 700V Fast Switching Characteristic RDS ON 2.4 Simple Drive Requirement ID 4A RoHS Compliant & Halogen-Free Description Advanced Power MOSFETs from APEC provide the
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AP04N70BI-H-HF
O-220CFM
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04n70bf
Abstract: 04N70BF-H SSM04N70BGF-H 04N70 Transistor 04N70BF 04n70b marking code C2 diode marking codes transistors SSs SSM04 ssm04n70bgfh
Text: SSM04N70BGF-H N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 700V R DS ON 2.4Ω ID 4A DESCRIPTION The SSM04N70BGF-H achieves fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC
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SSM04N70BGF-H
SSM04N70BGF-H
O-220FM
O-220FM
04n70bf
04N70BF-H
04N70
Transistor 04N70BF
04n70b
marking code C2 diode
marking codes transistors SSs
SSM04
ssm04n70bgfh
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PDF
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Untitled
Abstract: No abstract text available
Text: AP04N70BS-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test BVDSS 700V Fast Switching Characteristic RDS ON 2.4 Simple Drive Requirement ID 4A RoHS Compliant & Halogen-Free Description AP04N70 series are specially designed as main switching devices for
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AP04N70BS-H-HF
AP04N70
265VAC
O-263
100us
100ms
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PDF
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AP04N70BI-H
Abstract: No abstract text available
Text: AP04N70BI-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 700V RDS ON 2.4Ω ID G 4A S Description Advanced Power MOSFETs from APEC provide the
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AP04N70BI-H
O-220CFM
AP04N70BI-H
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04n70bi
Abstract: 04N70B 04N70 TO220CFM AP04N70BI-H TO-220CFM
Text: AP04N70BI-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 700V RDS ON 2.4Ω ID G 4A S Description AP04N70 series are specially designed as main switching devices for
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AP04N70BI-H
AP04N70
265VAC
O-220CFM
O-220CFM
04N70BI
04n70bi
04N70B
04N70
TO220CFM
AP04N70BI-H
TO-220CFM
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-R Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70-R
4N70-R
O-220F1
QW-R502-A66
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70K-MK Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70K-MK is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70K-MK
4N70K-MK
4N70KL-TF3-T
4N70KG-TF3-T
QW-r205-015
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-S Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70-S is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70-S
4N70-S
O-252
QW-R205-023
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AP04N70BF
Abstract: AP04N70BF-H
Text: AP04N70BF-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BV DSS 700V RDS ON 2.4Ω ID G 4A S Description AP04N70 series are specially designed as main switching devices for
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AP04N70BF-H
AP04N70
265VAC
O-220FM
O-220FM
AP04N70BF
AP04N70BF-H
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PDF
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AP04N70BP
Abstract: No abstract text available
Text: AP04N70BP Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Dynamic dv/dt Rating BVDSS D ▼ Repetitive Avalanche Rated RDS ON ▼ Fast Switching ID G ▼ Simple Drive Requirement 600/650/700V 2.4Ω 4A S Description AP04N70 series are specially designed as main switching devices for
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AP04N70BP
600/650/700V
AP04N70
265VAC
O-220
O-220
AP04N70BP
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PDF
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04N70BP
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP04N70BP-H-HF-3 N-channel Enhancement-mode Power MOSFET 100% Avalanche-Tested D Simple Drive Requirement Fast Switching Performance G RoHS-compliant, halogen-free BV DSS 700V R DS ON 2.4Ω ID 4A S Description Advanced Power MOSFETs from APEC provide the designer with the best
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AP04N70BP-H-HF-3
AP04N70BP-H-HF-3
O-220
O-220
AP04N70B
04N70BP
04N70BP
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04n70bi
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP04N70BI-H-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D 100% Avalanche Tested Fast Switching Performance G RoHS-compliant, halogen-free BV DSS 700V R DS ON 2.4Ω ID 4A S Description Advanced Power MOSFETs from APEC provide the designer with the best
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AP04N70BI-H-HF-3
AP04N70BI-H-HF-3
O-220CFM
AP04N70B
04N70BI
O-220CFM
04n70bi
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PDF
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Untitled
Abstract: No abstract text available
Text: ICE4N70 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 4A Max V BR DSS ID = 250uA 700V Min rDS(ON) VGS = 10V 1.0Ω Typ Qg VDS = 480V 21nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability
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ICE4N70
250uA
O-220
100us
0E-06
0E-05
0E-04
0E-03
0E-02
0E-01
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP04N70BS-H-HF-3 N-channel Enhancement-mode Power MOSFET 100% Avalanche-Tested D Simple Drive Requirement Fast Switching Performance G RoHS-compliant, halogen-free BV DSS 700V R DS ON 2.4Ω ID 4A S Description Advanced Power MOSFETs from APEC provide the designer with the best
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Original
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AP04N70BS-H-HF-3
AP04N70BS-H-HF-3
O-263
O-263
AP04N70B
04N70BS
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PDF
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Untitled
Abstract: No abstract text available
Text: ICE4N70FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 4A Max V BR DSS ID = 250uA 700V Min rDS(ON) VGS = 10V 1.0Ω Typ Qg VDS = 480V 21nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability
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ICE4N70FP
250uA
O-220
100us
0E-06
0E-04
0E-02
0E-00
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PDF
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Untitled
Abstract: No abstract text available
Text: SSM04N70BP,R N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge D Simple drive requirement Fast switching BV DSS 600/650/700V R DS ON 2.4Ω 4A ID G S Description The SSM04N70BR is in a TO-262 package, which is widely used for G D commercial and industrial applications, and is well suited for universal
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SSM04N70BP
600/650/700V
SSM04N70BR
O-262
265VAC
SSM04N70BP
O-220
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