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    702 A TRANSISTOR Search Results

    702 A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    702 A TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    702 P TRANSISTOR

    Abstract: LTA 702 TRansistor L 701 LTA 703 S 701 transistor 702 transistor k/702 P transistor
    Text: KSE700/701/702/703 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MINhFE=750 @ lc= -1.5 and -2 .0 A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • Complement to KSE800/801/802/803 ABSOLUTE MAXIMUM RATINGS -


    OCR Scan     		KSE700/701/702/703 KSE800/801/802/803 KSE700/701 702 P TRANSISTOR LTA 702 TRansistor L 701 LTA 703 S 701 transistor 702 transistor k/702 P transistor PDF

    2N5927

    Abstract: H LB 120A 2N5927 JAN powertech PT-700 PT-702 pt100 temperature PT702 JANTX2N5927 114PKG
    Text: 17E “BIG IDEAS IN BIG POWER" D • PowerTecn POIdERTECH INC T-33-is ISO AMPERES JAN T X 2 N 5 9 2 7 FT- 70Q PT- "702 SILICON NPN TRANSISTOR FEATURES: V CE sat . 0.75 V @70 A VBE. 1.5 V @70 A hF E .


    OCR Scan     		T-33-15 2N5927 JEDECT0-114PKG. 200mA, 100KHZ H LB 120A 2N5927 JAN powertech PT-700 PT-702 pt100 temperature PT702 JANTX2N5927 114PKG PDF

    2N5927 JAN

    Abstract: No abstract text available
    Text: BIG IDEAS IN PowerTech big po w er ” • 120 AMPERES JAN T X 2 N 5 9 2 7 P T - 700 P T - "702 SILICON NPN TRANSISTOR FEATURES: V c E s a t . V BE 0.75 V @ 70 A h p ^ . 5 min @ 120 A 1.5 V @ 70 A t j .


    OCR Scan     		O-114 100KHz 2N5927 JAN PDF

    TRANSISTOR S 802

    Abstract: KSE800 ic 801
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KS E800/801/803 HIGH DC CU R R EN T GAIN MIN hFE= 750 @ lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EM ITTER RESISTORS Complement to KSE700/701/702/703 A B S O LU T E MAXIMUM RATINGS Characteristic


    OCR Scan     		E800/801/803 KSE700/701/702/703 KSE800/801 KSE802/803 KSE800/801/803 TRANSISTOR S 802 KSE800 ic 801 PDF

    transistor kt 801

    Abstract: S/transistor kt 801 KT 802 transistor a05 801
    Text: SAMSUNG S E MI CONDUCTOR INC MJE800/801/802/803 IME O | 7^4145 000770b NPN EPITAXIAL r - 33 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hpE—750 @ lc= —1.5 and -2 .0 A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complementary to MJE700/701/702/703


    OCR Scan     		MJE800/801/802/803 000770b O-126 MJE700/701/702/703 MJE800/801 MJE802/803 MJEo00/801 GQG77fe transistor kt 801 S/transistor kt 801 KT 802 transistor a05 801 PDF

    sot 23 transistor 70.2

    Abstract: LTA 702 N k/702 P transistor
    Text: S A MS U N G SEMICONDUCTOR INC 14ÉD 1 7 ei b 4 : m 2 0007704 S NpN EPITAXIAL M JE700/701/702/703 SILICON DARLINGTON TRANSISTOR T ~ ? :r - 3 HIGH DC CURRENT GAIN MIN hFE—750 @ lc s - 1 .5 and -2 .0 A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS


    OCR Scan     		JE700/701/702/703 MJE800/801/802/803 MJE700/701 MJE702/703 GQG77fe sot 23 transistor 70.2 LTA 702 N k/702 P transistor PDF

    ADG729

    Abstract: 2N3906 ADG709 ADT7461 AN-702
    Text: AN-702 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • Tel: 781/329-4700 • Fax: 781/326-8703 • www.analog.com Using the ADT7461 as a Multichannel Temperature Sensor by Susan Pratt ential multiplexer in conjunction with the ADT7461. Both


    Original     		AN-702 ADT7461 ADT7461. 2N3906. ADG729 ADG709 AN04690 2N3906 AN-702 PDF

    150X1

    Abstract: No abstract text available
    Text: 2N7002 N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY SOT-23 V BR DSS (V) r DS(ON) ( il) (A) 60 7 .5 0 .1 1 5 TOP VIEW •d ID 2 HU 10 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 PRODUCT MARKING 2N7002 702 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)


    OCR Scan     		2N7002 OT-23 VNDS06 150X1, 150X1 PDF

    1702A

    Abstract: No abstract text available
    Text: r ^ T N I / I A dvanced 1 ALD1702A/ALD1702B ALDI 702/ALD1703 L in e a r D e v ic e s , I n c . 5V RAIL-TO-RAIL PRECISION OPERATIONAL AMPLIFIER GENERAL DESCRIPTION FEATURES The ALD1702/ALD1703 is a monolithic operational amplifier intended primarily for a wide range of analog applications in +5V single power


    OCR Scan     		ALD1702A/ALD1702B 702/ALD1703 ALD1702/ALD1703 4000pF 02A/ALD1702B 1702A PDF

    Untitled

    Abstract: No abstract text available
    Text: r T T N I / I A dvanced 1 ALD1702A/ALD1702B ALDI 702/ALD1703 L in e a r D e v ic e s , I n c . 5V RAIL TO RAIL PRECISION OPERATIONAL AMPLIFIER GENERAL DESCRIPTION FEATURES The A LD 1702/A LD 1703 is a monolithic operational amplifier intended primarily for a wide range of analog applications in +5V single power


    OCR Scan     		ALD1702A/ALD1702B 702/ALD1703 1702/A \AA10K 4000pF 02Sb0fl3 02A/ALD1702B PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Small-Signal Transistor Vns /D ^ D S o n BSS 124 = 400 V = 0 .1 2 A = 28 Q • N channel • Enhancem ent mode • Package: T O -9 2 ') Type Ordering code for version in bulk BSS 124 Q 62 702-S 614 Maximum Ratings Symbol Values Unit D rain-so urce voltage


    OCR Scan     		702-S PDF

    hengstler counter 702

    Abstract: Hengstler 702 Hengstler tico 0 702 100 Hengstler 1 702 100 Hengstler tico 742 Hengstler relay 24VACDC transistor 742 742 opto Hengstler
    Text: Operating instructions - Repeat Cycle LED Timer 0 742 701/ 0742 702/ 0 742 751/ 0 742 752 Your tico 742 timer is an unique instrument specifically designed for handling repetitive cyclical operations. This unit is highly flexible and can be field configured to operate in a number of different fashions. Unique


    Original     		D-78550 D-78554 hengstler counter 702 Hengstler 702 Hengstler tico 0 702 100 Hengstler 1 702 100 Hengstler tico 742 Hengstler relay 24VACDC transistor 742 742 opto Hengstler PDF

    702 TRANSISTOR

    Abstract: 702 P TRANSISTOR MJE700 702 Z TRANSISTOR transistor 702 transistor k 702 BVCEO 2000 TRansistor 701
    Text: mr c r i i h a im l MJE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 lc= -1.5 and -2.0A DC MO NO LITHIC CONSTRUCTION W ITH BUILT-IN BASE-EMITTER RESISTORS • C o m p le m e n t to M J E 8 0 0 /8 0 1 /8 0 2 /8 0 3 ABSOLUTE M AXIMUM RATINGS


    OCR Scan     		MJE700/701 MJE800/801/802/803 MJE702/703 702 TRANSISTOR 702 P TRANSISTOR MJE700 702 Z TRANSISTOR transistor 702 transistor k 702 BVCEO 2000 TRansistor 701 PDF

    ic 701

    Abstract: ic 701 fairchild 702 transistor 701 transistor mje700 TRansistor 701
    Text: MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 TO-126 1 1 . Emitter 2. Collector 3. Base PNP Epitaxial Silicon Darlington Transistor


    Original     		MJE700/701/702/703 MJE800/801/802/803 O-126 MJE700/701 MJE702/703 ic 701 ic 701 fairchild 702 transistor 701 transistor mje700 TRansistor 701 PDF

    JE702

    Abstract: 702 TRANSISTOR
    Text: m r c ri i maiml MJE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE800/801/802/803 ABSOLUTE MAXIMUM RATINGS C haracteristic


    OCR Scan     		MJE700/701 JE800/801/802/803 MJE700/701 JE702/703 JE701/703 JE702 702 TRANSISTOR PDF

    702 TRANSISTOR

    Abstract: transistor 702 TRansistor 701 ic 701 702 Z TRANSISTOR ir 701 702 pnp kse800 q 702 TRansistor L 701
    Text: PNP EPITAXIAL KSE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to KSE800/801/802/803 ABSOLUTE MAXIMUM RATINGS Characteristic


    OCR Scan     		KSE700/701 KSE800/801/802/803 O-126 KSE702/703 702 TRANSISTOR transistor 702 TRansistor 701 ic 701 702 Z TRANSISTOR ir 701 702 pnp kse800 q 702 TRansistor L 701 PDF

    702 TRANSISTOR

    Abstract: 702 pnp
    Text: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor


    Original     		KSE700/701/702/703 KSE800/801/802/803 O-126 KSE700/701 KSE702/703 702 TRANSISTOR 702 pnp PDF

    bd437 siemens

    Abstract: transistor d437 D437 transistor bd 439
    Text: ESC D • ôSBSbOS QQQ43b3 4 M S I E 6 • -h ' z i -H NPN Silicon Epibase Transistors ' BD 433 BD 435 0 -BD 437 BD 439 BD 441 SIEMENS AKTIENGESELLSCHAF The transistors BD 4 3 3 , BO 4 3 5 , BD 4 3 7 , BD 4 3 9 , and BD 441 are NPN silicon epibase


    OCR Scan     		QQQ43b3 fi235b05 BD433 BD439 BD441 BD437. BD433. BD433, BD435, bd437 siemens transistor d437 D437 transistor bd 439 PDF

    702 TRANSISTOR

    Abstract: 702 pnp ON 001 702 transistor k 702
    Text: MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor


    Original     		MJE700/701/702/703 MJE800/801/802/803 O-126 MJE700/701 MJE702/703 702 TRANSISTOR 702 pnp ON 001 702 transistor k 702 PDF

    702 TRANSISTOR

    Abstract: ic 701 fairchild TRansistor 701 702 pnp 702 Fairchild ic 701 transistor 702 701 ic MJE700
    Text: PNP EPITAXIAL MJE700/701/702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 IC= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complement to MJE800/801/802/803 ABSOLUTE MAXIMUM RATINGS Characteristic


    Original     		MJE700/701/702/703 O-126 MJE800/801/802/803 MJE700/701 MJE702/703 702 TRANSISTOR ic 701 fairchild TRansistor 701 702 pnp 702 Fairchild ic 701 transistor 702 701 ic MJE700 PDF

    702 y TRANSISTOR

    Abstract: 702 Z TRANSISTOR transistor marking 702 application marking 702 FAIRCHILD ic 701
    Text: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor


    Original     		KSE700/701/702/703 KSE800/801/802/803 O-126 KSE700/701 KSE702/703 KSE703 KSE703S 702 y TRANSISTOR 702 Z TRANSISTOR transistor marking 702 application marking 702 FAIRCHILD ic 701 PDF

    ic 701

    Abstract: No abstract text available
    Text: PNP EPITAXIAL KSE700/701/702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @IC= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complement to KSE800/801/802/803 ABSOLUTE MAXIMUM RATINGS Characteristic


    Original     		KSE700/701/702/703 KSE800/801/802/803 O-126 KSE700/701 KSE702/703 ic 701 PDF

    702 y TRANSISTOR

    Abstract: KSE800
    Text: PNP EPITAXIAL KSE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BAS E-EMITTER RESISTORS * Complement to KSE800/801/802/803 ABSOLUTE MAXIMUM RATINGS C haracteristic


    OCR Scan     		KSE700/701 KSE800/801/802/803 KSE700/701 KSE702/703 702 y TRANSISTOR KSE800 PDF

    702 y TRANSISTOR

    Abstract: JE701 JE700 702 P TRANSISTOR je 701
    Text: r n r e n i maiml MJE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE 800/801/802/803 ABSOLUTE MAXIMUM RATINGS C haracteristic


    OCR Scan     		MJE700/701 MJE700/701 MJE702/703 702 y TRANSISTOR JE701 JE700 702 P TRANSISTOR je 701 PDF