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    702 MOSFET Search Results

    702 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    702 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JANSR2N7484T3

    Abstract: diode.18 IRHY53130CM IRHY54130CM IRHY57130CM JANSF2N7484T3 JANSG2N7484T3 JANSH2N7484T3
    Text: PD - 93826D IRHY57130CM JANSR2N7484T3 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 TECHNOLOGY 5 ™ Product Summary Part Number IRHY57130CM IRHY53130CM IRHY54130CM Radiation Level 100K Rads (Si) 300K Rads (Si)


    Original     		PDF 93826D IRHY57130CM JANSR2N7484T3 O-257AA) MIL-PRF-19500/702 IRHY53130CM IRHY54130CM JANSF2N7484T3 JANSR2N7484T3 diode.18 IRHY53130CM IRHY54130CM IRHY57130CM JANSF2N7484T3 JANSG2N7484T3 JANSH2N7484T3

    IRHY53130CM

    Abstract: IRHY54130CM IRHY57130CM JANSF2N7484T3 JANSG2N7484T3 JANSH2N7484T3 JANSR2N7484T3
    Text: PD - 93826C IRHY57130CM JANSR2N7484T3 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 TECHNOLOGY 4# c Product Summary Part Number IRHY57130CM IRHY53130CM IRHY54130CM Radiation Level 100K Rads (Si) 300K Rads (Si)


    Original     		PDF 93826C IRHY57130CM JANSR2N7484T3 O-257AA) MIL-PRF-19500/702 IRHY53130CM IRHY54130CM JANSF2N7484T3 IRHY53130CM IRHY54130CM IRHY57130CM JANSF2N7484T3 JANSG2N7484T3 JANSH2N7484T3 JANSR2N7484T3

    SHD239606

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD239606 TECHNICAL DATA DATA SHEET 702, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 0.23 Ohm MOSFET œ Isolated and Hermetically Sealed œ Surface Mount Package MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT


    Original     		PDF SHD239606 250masheet SHD239606

    702 mosfet

    Abstract: SHD239606 RG 702 Diode
    Text: SENSITRON SEMICONDUCTOR SHD239606 TECHNICAL DATA DATA SHEET 702, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 0.23 Ohm MOSFET œ Isolated and Hermetically Sealed œ Surface Mount Package MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT


    Original     		PDF SHD239606 250mA RESISTANCE631) SHD239606 702 mosfet RG 702 Diode

    Untitled

    Abstract: No abstract text available
    Text: PD-93826E IRHY57130CM JANSR2N7484T3 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHY57130CM 100K Rads (Si) IRHY53130CM 300K Rads (Si) IRHY54130CM 500K Rads (Si)


    Original     		PDF PD-93826E O-257AA) IRHY57130CM IRHY53130CM IRHY54130CM JANSR2N7484T3 MIL-PRF-19500/702 JANSF2N7484T3

    Untitled

    Abstract: No abstract text available
    Text: PD-93826E IRHY57130CM JANSR2N7484T3 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHY57130CM 100K Rads (Si) IRHY53130CM 300K Rads (Si) IRHY54130CM 500K Rads (Si)


    Original     		PDF PD-93826E IRHY57130CM JANSR2N7484T3 O-257AA) MIL-PRF-19500/702 IRHY57130CM IRHY53130CM IRHY54130CM JANSF2N7484T3

    IRHF58034CM

    Abstract: IRHY53034CM IRHY54034CM IRHY57034CM JANSR2N7483T3
    Text: PD - 93825C IRHY57034CM JANSR2N7483T3 60V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 Product Summary TECHNOLOGY ™ Part Number Radiation Level RDS(on) IRHY57034CM 100K Rads (Si) 0.04Ω ID QPL Part Number 18*A JANSR2N7483T3


    Original     		PDF 93825C IRHY57034CM JANSR2N7483T3 O-257AA) MIL-PRF-19500/702 IRHY57034CM IRHY53034CM IRHY54034CM JANSG2N7483T3 IRHF58034CM JANSR2N7483T3

    JANSR2N7483T3

    Abstract: IRHF58034CM IRHY53034CM IRHY54034CM IRHY57034CM
    Text: PD - 93825D IRHY57034CM JANSR2N7483T3 60V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHY57034CM 100K Rads (Si) 0.04Ω ID QPL Part Number 18A* JANSR2N7483T3


    Original     		PDF 93825D IRHY57034CM JANSR2N7483T3 O-257AA) MIL-PRF-19500/702 IRHY57034CM IRHY53034CM JANSF2N7483T3 IRHY54034CM JANSR2N7483T3 IRHF58034CM

    Untitled

    Abstract: No abstract text available
    Text: PD - 93824C IRHY57030CM JANSR2N7482T3 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 Product Summary TECHNOLOGY ™ Part Number Radiation Level RDS(on) IRHY57Z30CM 100K Rads (Si) 0.03Ω IRHY53Z30CM 300K Rads (Si) 0.03Ω


    Original     		PDF 93824C O-257AA) IRHY57Z30CM IRHY53Z30CM IRHY54Z30CM IRHF58Z30CM 1000K IRHY57030CM JANSR2N7482T3 MIL-PRF-19500/702

    Untitled

    Abstract: No abstract text available
    Text: PD-93824E IRHY57Z30CM JANSR2N7482T3 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 Product Summary TECHNOLOGY ™ Part Number Radiation Level RDS(on) IRHY57Z30CM 100K Rads (Si) 0.03Ω IRHY53Z30CM 300K Rads (Si) 0.03Ω


    Original     		PDF PD-93824E IRHY57Z30CM JANSR2N7482T3 O-257AA) MIL-PRF-19500/702 IRHY57Z30CM IRHY53Z30CM JANSF2N7482T3 IRHY54Z30CM

    IRHY57Z30CM

    Abstract: JANSR2N7482T3 IRHF58Z30CM IRHY53Z30CM IRHY54Z30CM
    Text: PD-93824D IRHY57Z30CM JANSR2N7482T3 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 Product Summary TECHNOLOGY ™ Part Number Radiation Level RDS(on) IRHY57Z30CM 100K Rads (Si) 0.03Ω IRHY53Z30CM 300K Rads (Si) 0.03Ω


    Original     		PDF PD-93824D IRHY57Z30CM JANSR2N7482T3 O-257AA) MIL-PRF-19500/702 IRHY57Z30CM IRHY53Z30CM JANSF2N7482T3 IRHY54Z30CM JANSR2N7482T3 IRHF58Z30CM

    12v 18A DC motor

    Abstract: No abstract text available
    Text: PD-93825E IRHY57034CM JANSR2N7483T3 60V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 Product Summary TECHNOLOGY ™ Part Number Radiation Level RDS(on) IRHY57034CM 100K Rads (Si) 0.04Ω ID QPL Part Number 18A* JANSR2N7483T3


    Original     		PDF PD-93825E O-257AA) IRHY57034CM IRHY53034CM IRHY54034CM IRHY58034CM 1000K JANSR2N7483T3 MIL-PRF-19500/702 12v 18A DC motor

    Untitled

    Abstract: No abstract text available
    Text: PD-93825E IRHY57034CM JANSR2N7483T3 60V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 Product Summary TECHNOLOGY ™ Part Number Radiation Level RDS(on) IRHY57034CM 100K Rads (Si) 0.04Ω ID QPL Part Number 18A* JANSR2N7483T3


    Original     		PDF PD-93825E IRHY57034CM JANSR2N7483T3 O-257AA) MIL-PRF-19500/702 IRHY57034CM IRHY53034CM JANSF2N7483T3 IRHY54034CM

    IRHF58Z30CM

    Abstract: IRHY53Z30CM IRHY54Z30CM IRHY57Z30CM JANSR2N7482T3
    Text: PD-93824E IRHY57Z30CM JANSR2N7482T3 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/702 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHY57Z30CM 100K Rads (Si) 0.03Ω IRHY53Z30CM 300K Rads (Si) 0.03Ω


    Original     		PDF PD-93824E IRHY57Z30CM JANSR2N7482T3 O-257AA) MIL-PRF-19500/702 IRHY57Z30CM IRHY53Z30CM JANSF2N7482T3 IRHY54Z30CM IRHF58Z30CM JANSR2N7482T3

    RG 702 Diode

    Abstract: 702 SOT-23 marking 702 MARKING CODE 702 702 marking code RG 702 L2N7002LT1 L2N7002LT1G SOT23-3 702
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1 N–Channel SOT–23 3 • Pb−Free Package is Available. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR


    Original     		PDF L2N7002LT1 236AB) L2N7002LT1 RG 702 Diode 702 SOT-23 marking 702 MARKING CODE 702 702 marking code RG 702 L2N7002LT1G SOT23-3 702

    sot 23 70.2

    Abstract: L2N7002LT1G marking 702 sot23 702 sot 23 L2N7002LT1G SOT-23
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product are Halogen Free and compliance with RoHS requirements. 1 2 • ESD Protected:1000V CASE 318, STYLE 21 SOT– 23 TO–236AB


    Original     		PDF L2N7002LT1G 236AB) OT-23 sot 23 70.2 L2N7002LT1G marking 702 sot23 702 sot 23 L2N7002LT1G SOT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G S-L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product are Halogen Free and compliance with RoHS requirements. 1 • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring


    Original     		PDF L2N7002LT1G S-L2N7002LT1G 236AB) AEC-Q101 OT-23

    702 sot

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60


    Original     		PDF L2N7002LT1G 236AB) 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner 702 sot

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product compliance with RoHS requirements. 1 • ESD Protected:1000V 2 CASE 318, STYLE 21 SOT– 23 TO–236AB MAXIMUM RATINGS


    Original     		PDF L2N7002LT1G 236AB) 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 3 • Pb−Free Package is Available. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ


    Original     		PDF L2N7002LT1G 236AB)

    702 mosfet

    Abstract: code 702 MARKING CODE 702 702 TRANSISTOR sot-23 702 sot 23 RG 702 Diode 2N7002 MARKING 702 marking 702 sot23 SOT23 transistor 702 702 SOT-23
    Text: Central 2N7002 TM Semiconductor Corp. N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.


    Original     		PDF 2N7002 2N7002 OT-23 200mA 26-September 702 mosfet code 702 MARKING CODE 702 702 TRANSISTOR sot-23 702 sot 23 RG 702 Diode 2N7002 MARKING 702 marking 702 sot23 SOT23 transistor 702 702 SOT-23

    702 sot 23

    Abstract: RG 702 Diode 702 mosfet 702 sot-23 2N7002 MARKING 702 SOT23 transistor 702 702 TRANSISTOR sot-23 702 sot 702 transistor sot 23 marking 702 sot23
    Text: 2N7002 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed


    Original     		PDF 2N7002 OT-23 200mA 31-January 200mA, 702 sot 23 RG 702 Diode 702 mosfet 702 sot-23 2N7002 MARKING 702 SOT23 transistor 702 702 TRANSISTOR sot-23 702 sot 702 transistor sot 23 marking 702 sot23

    702 TRANSISTOR

    Abstract: 702 TRANSISTOR sot-23 702 sot 23 sot-23 MARKING CODE 70.2 702 mosfet 2N7002 MARKING 702 RG 702 SOT23 transistor 702 code 702 702 sot-23
    Text: 2N7002 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed


    Original     		PDF 2N7002 2N7002 OT-23 702 TRANSISTOR 702 TRANSISTOR sot-23 702 sot 23 sot-23 MARKING CODE 70.2 702 mosfet 2N7002 MARKING 702 RG 702 SOT23 transistor 702 code 702 702 sot-23

    SSH6N80

    Abstract: SSH3N90 ssh12n80 ssh7n90 SSH11N90 ssh-6n80 SSH8N80 SSH12N70
    Text: FUNCTION GUIDE MOSFETs TO-3P N-CHANNEL Continued Part Number BV dss(V) lD(on)(A) RDS(on){Q) R0jc(K/W) Po(Watt) Page SSH4N70 SSH5N70 SSH6N70 SSH8N70 SSH10N70 SSH12N70 700 4.00 5.00 6.00 8.00 10.00 12.00 3.500 2,500 1.900 1.400 1.200 0.900 0.93 0.83 0.73 0.65


    OCR Scan     		PDF SSH4N70 SSH5N70 SSH6N70 SSH8N70 SSH10N70 SSH12N70 SSH4N80 SSH5N80 SSH6N80 SSH8N80 SSH3N90 ssh12n80 ssh7n90 SSH11N90 ssh-6n80