ZVP2106
Abstract: zetex zvp zetex zvp2106a ZVP2106A F216 ZVP P-channel
Text: bGE D • ^7057fl □ □ □ 7 1 1 3 ITM ■ ZETB ' ZETEX S E M I C O N D U C T O R S P-Channel enhancement mode vertical DMOS FET ZVP2106 FEATURES • C o m pa ct geom etry • Fast s w itc h in g speeds • No secondary breakdow n • E xcellent tem perature sta b ility
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ZVP2106
zvp2106a*
zvp2106b*
zvp2106c
F-215
70S7fl
F-216
F-217
ZVP2106
zetex zvp
zetex zvp2106a
ZVP2106A
F216
ZVP P-channel
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Untitled
Abstract: No abstract text available
Text: SbE m T> ^7057fl NPN SWITCHING Type BFY51 Max V CEO 'c 0 0 0 b ^ 6 ZETEX S E M I C O N D U C T O R S Continued M ax V CE sat at hFE 'b Min M ax 40 V •c V mA mA mA 30 1000 0.35 150 15 041 « Z E T B " F i b S ~ C > j fT Min at at - Switching times (Max.) at
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7057fl
BFY51
2N2218
2N2904
2N2219
2N2905
2N2221
2N2369A
2N2368
2N2369
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IS S U E 1 - A P R IL 94 _ FEATURES * * 25 Volt V CE0 2 A m p continuous current * Low saturation voltage ABSOLUTE M A XIM U M RATINGS. PARAMETER SY M B O L Collector-Base Voltage VALUE UNIT V CBO
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0Q1Q354
001G35S
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DS199
Abstract: No abstract text available
Text: FMMT2222 FMMT2222A S0T23 NPN SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT2222 - 1B FMMT2222A - 1P FMMT2222R - 2P FMMT2222AR - 3P ABSOLUTE MAXIMUM RATINGS SY M B O L PAR AM ETER Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage
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S0T23
FMMT2222
FMMT2222A
FMMT2222R
FMMT2222AR
FMMT2222
FMMT2222A
140KHz
DS199
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR M EDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * High V CE0 / Very Low Saturation Voltage * Gain of 400 at lc=200mA APPLICATIONS * Darlington replacement * Relay / solenoid driver PARTMARKING DETAIL FZT694B ABSOLUTE MAXIMUM RATINGS.
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OT223
200mA
FZT694B
50MHz
100mA,
7057fl
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX789A ISSUE 2 -APRIL 94_ — — — — FEATURES * 25 Volt VCE0 * Gain of 200 at lc=2 Amps * Very low saturation voltage APPLICATIONS * * Darlington replacement
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ZTX789A
H7Q57Ã
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M ARCH 94 FEATURES * 100 Volt VDS * A \ Ros.on,=20n m JffS Gs E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS -100 V Continuous Drain Current at Tamtj=25°C b
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amtp25Â
cH7Q57Ã
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 2 -M A R C H 94_ FEATURES * 100 Volt V DS * R DS on = ABSOLUTE M A XIM U M RATINGS. PARAMETER SY M B O L VALUE UNIT V DS 100 V •d 320 mA 6 A ±20 V 700 mW -55 to +150 °C Drain-Source Voltage
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Tarntp25Â
cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX750 ZTX751 I S S U E 2 - J U L Y 94_ FEATURES * 60 Volt V CE0 * 2 A m p c o n tin u o u s current * L o w saturation voltage * P ,o f1 W a tt E-Line T 0 9 2 Compatible ABSOLUTE M A XIM U M RATINGS.
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ZTX750
ZTX751
001G35S
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ZVP2206L
Abstract: No abstract text available
Text: ZETEX S E M I C O N D U C T O R S 1S1> D T cî70S7ô ÜOOSflOl T • ZETB 95D 05801 T ' 37-25 ' P-channel enhancement mode vertical D M O S FET ZVP2206 FEATURES • Com pact geometry • Fast switching speeds • N o secondary breakdown • Excellent temperature stability
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ZVP2206
ZVP2206B*
ZVP2206L
ZVP2206L
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR FMMT413 PROVISIONAL DATASHEET ISSUE 2 - MARCH 1996 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators
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FMMT413
FMMT413
7057fl
20MHz
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94_ FEATURES » 200 Volt VDS * RDS on = 1 0 ß ABSOLUTE MAXIMUM RATINGS. VALUE UNIT V DS 200 V *D 180 mA A SYMBOL PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25<>C
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arntp25Â
cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: Silicon rectifier diodes BYY57/BYY 58 FEATURES • Forward current 35 A • Reverse voltage 75 V - 1500 V • hermetic press-fit package • Available in different modifications of the package APPLICATIONS • Rectifying in car generators • Power supplies
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BYY57/BYY
BYY57
BYY58
57/6e
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Untitled
Abstract: No abstract text available
Text: 6 VOLT ENHANCED POSITIVE LOCAL VOLTAGE REGULATOR ZSAT600 ISSUE 1 - AUGUST 1996 DEVICE DESCRIPTION The devices are suited to local voltage regulation applications, where problems could be encountered with distributed single source regulation, as well as more general voltage
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ZSAT600
ZSAT600
22KHz,
200KHz.
22kHz
OT223
ZSAT600N8
ZSAT600G
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94_ FEATURES * 400 Volt VDS * R DS on = 5 0 ß ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage Vps 400 V b 90 mA mA Continuous Drain Current atTam^=25°C VALUE
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cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 -A P R IL 94_ FEATURES * * 25 Volt VCE0 2 Amp continuous current * Low saturation voltage * Ptot=1 W att APPLICATIONS * Motor driver * DC-DC converters E E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS.
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Untitled
Abstract: No abstract text available
Text: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 - FEBRUARY 1995_ O FEATURES * High gain and low saturation voltages COMPLEMENTARY TYPE - BCX69 PARTMARKING D E T A IL- BCX68 -C E BCX68-16 - C C BCX68-25 - C D ABSOLUTE MAXIMUM RATINGS. PARAMETER
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BCX69
BCX68
BCX68-16
BCX68-25
100mA*
500mA,
50CimA,
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