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    70N60 Search Results

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    70N60 Price and Stock

    Vishay Siliconix SIHH070N60EF-T1GE3

    MOSFET N-CH 600V 36A PPAK 8 X 8
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    DigiKey SIHH070N60EF-T1GE3 Cut Tape 3,000 1
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    SIHH070N60EF-T1GE3 Digi-Reel 3,000 1
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    SIHH070N60EF-T1GE3 Reel 3,000 3,000
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    onsemi FCP170N60

    MOSFET N-CH 600V 22A TO220-3
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    DigiKey FCP170N60 Tube 790 1
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    Avnet Americas FCP170N60 Tube 0 Weeks, 2 Days 204
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    FCP170N60 Tube 800
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    Mouser Electronics FCP170N60 313
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    Newark FCP170N60 Bulk 800
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    Rochester Electronics FCP170N60 766 1
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    Richardson RFPD FCP170N60 800
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    Avnet Silica FCP170N60 18 Weeks 50
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    Flip Electronics FCP170N60 795
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    STMicroelectronics STW70N60M2

    MOSFET N-CH 600V 68A TO247
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    DigiKey STW70N60M2 Tube 763 1
    • 1 $10.27
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    Avnet Americas STW70N60M2 Bulk 16 Weeks, 4 Days 1
    • 1 $7.85
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    STW70N60M2 Tube 16 Weeks 600
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    Mouser Electronics STW70N60M2 912
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    Newark STW70N60M2 Bulk 4,167 1
    • 1 $6.14
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    STMicroelectronics STW70N60M2 912 1
    • 1 $8.67
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    TME STW70N60M2 1
    • 1 $11.27
    • 10 $8.98
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    Avnet Silica STW70N60M2 17 Weeks 30
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    Chip1Stop STW70N60M2 Tube 600
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    EBV Elektronik STW70N60M2 2,130 17 Weeks 30
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    Win Source Electronics STW70N60M2 34,400
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    onsemi FDB0170N607L

    MOSFET N-CH 60V 300A TO263-7
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    DigiKey FDB0170N607L Cut Tape 726 1
    • 1 $4.34
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    FDB0170N607L Digi-Reel 726 1
    • 1 $4.34
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    Mouser Electronics FDB0170N607L 13,487
    • 1 $4.34
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    Newark FDB0170N607L Bulk 800
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    Bristol Electronics FDB0170N607L 35 2
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    Rochester Electronics FDB0170N607L 619 1
    • 1 $2.2
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    Richardson RFPD FDB0170N607L 800
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    Avnet Asia FDB0170N607L 22 Weeks 800
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    Avnet Silica FDB0170N607L 23 Weeks 800
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    EBV Elektronik FDB0170N607L 24 Weeks 800
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    onsemi FCH070N60E

    MOSFET N-CH 600V 52A TO247
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    DigiKey FCH070N60E Tube 453 1
    • 1 $10.64
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    • 100 $6.34233
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    Avnet Americas FCH070N60E Tube 16 Weeks 450
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    Mouser Electronics FCH070N60E 230
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    Newark FCH070N60E Bulk 450
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    TME FCH070N60E 1
    • 1 $9.19
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    Richardson RFPD FCH070N60E 450
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    Avnet Silica FCH070N60E 17 Weeks 30
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    EBV Elektronik FCH070N60E 18 Weeks 30
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    Find more 70N60 price and stock on Findchips.com

    70N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IXKH 70N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 70 A VDSS = 600 V RDS on max = 0.045 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S  D(TAB) Features MOSFET Conditions


    Original     		PDF 70N60C5 O-247

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFN 70N60Q2 VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr = 600 V = 70 A ≤ 80 mΩ Ω ≤ 250 ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings


    Original     		PDF 70N60Q2 OT-227 E153432

    70n60

    Abstract: IXFB70N60Q2
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 70N60Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 600 V ID25 = 70 A Ω RDS on = 80 mΩ ≤ 250 ns trr PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		PDF 70N60Q2 264TM 728B1 70n60 IXFB70N60Q2

    Untitled

    Abstract: No abstract text available
    Text: IXKH 70N60C5 CoolMOS 1 Power MOSFET ID25 = 70 A VDSS = 600 V RDS on) max = 0.045 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S fl D(TAB) S Features MOSFET Symbol Conditions VDSS TVJ = 25°C


    Original     		PDF 70N60C5 O-247 20090209d

    IXFB

    Abstract: IXFB70N60Q2
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 70N60Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 600 V ID25 = 70 A Ω RDS on = 80 mΩ ≤ 250 ns trr PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		PDF 70N60Q2 264TM 728B1 065B1 123B1 IXFB IXFB70N60Q2

    DSA003710

    Abstract: No abstract text available
    Text: IXKH 70N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 70 A VDSS = 600 V RDS on max = 0.045 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S q D(TAB) S Features MOSFET Conditions


    Original     		PDF 70N60C5 O-247 20070625a DSA003710

    70N60C5

    Abstract: 70n60 IXKH70N60C5
    Text: IXKH 70N60C5 CoolMOS 1 Power MOSFET ID25 = 70 A VDSS = 600 V RDS on) max = 0.045 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S q D(TAB) S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings


    Original     		PDF 70N60C5 O-247 20090209d 70N60C5 70n60 IXKH70N60C5

    70n60

    Abstract: 70n6 IXFB70N60Q2
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 70N60Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 600 V ID25 = 70 A Ω RDS on = 80 mΩ ≤ 250 ns trr PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		PDF 70N60Q2 264TM 728B1 70n60 70n6 IXFB70N60Q2

    123B16

    Abstract: IXFN70N60Q2 DS99029A
    Text: HiPerFETTM Power MOSFET IXFN 70N60Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 600 V ID25 = 70 A Ω RDS on = 80 mΩ ≤ 250 ns trr Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original     		PDF 70N60Q2 OT-227 E153432 728B1 065B1 123B1 123B16 IXFN70N60Q2 DS99029A

    70n60

    Abstract: No abstract text available
    Text: IXKH 70N60C5 Advanced Technical Information ID25 = 70 A = 600 V VDSS RDS on max = 0.045 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D S S D (TAB) Features MOSFET Conditions VDSS TVJ = 25°C


    Original     		PDF 70N60C5 O-247 70n60

    IXKH70N60C5

    Abstract: 70N60C5 70n60 TO-247 SD 431
    Text: IXKH 70N60C5 CoolMOS 1 Power MOSFET ID25 = 70 A VDSS = 600 V RDS on) max = 0.045 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S q D(TAB) S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings


    Original     		PDF 70N60C5 O-247 20080310b IXKH70N60C5 70N60C5 70n60 TO-247 SD 431

    Untitled

    Abstract: No abstract text available
    Text: IXKH 70N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 70 A VDSS = 600 V RDS on max = 0.045 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S q D(TAB) S Features MOSFET Conditions


    Original     		PDF 70N60C5 O-247 20070625a

    Untitled

    Abstract: No abstract text available
    Text: 70N60M2 N-channel 600 V, 0.03 Ω typ., 68 A MDmesh II Plus low Qg Power MOSFET in a TO-247 package Datasheet − production data Features Order code VDS @ TJmax RDS on max ID 70N60M2 650 V 0.040 Ω 68 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation


    Original     		PDF STW70N60M2 O-247 O-247 DocID024327

    70n60

    Abstract: No abstract text available
    Text: 70N60M2 N-channel 600 V, 0.031 Ω typ., 68 A MDmesh II Plus low Qg Power MOSFET in a TO-247 package Datasheet − preliminary data Features Order code VDS @ TJmax RDS on max ID 70N60M2 650 V 0.040 Ω 68 A • Extremely low gate charge 2 • Lower RDS(on) x area vs previous generation


    Original     		PDF STW70N60M2 O-247 O-247 DocID024327 70n60