t125 switch
Abstract: BUK437-600B
Text: PHILIPS INTERNATIONAL bSE D E3 711085b OObaSBb 435 B P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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7110A2b
BUK437-600B
t125 switch
BUK437-600B
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P87C575EHAA I
Abstract: P83C575EHPN 80C51 80C575 83C575 87C575 EC20D 2031h
Text: Philips Semiconductora Microcontroller Product 7 1 1 □ fl 2 b 0□bbb03 CMOS single-chip 8-bit microcontroller Product specification PHIN 80C575/83C575/87C575 • 80C51 based architecture - 8k x 8 ROM 83C575) - 8k x 8 EPROM (87C575) - ROMIess (80C575)
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80C575/83C575/87C575
80C575/83C575/87C575
8XC575
83C575)
87C575)
16-bit
48tcucL
48tcLCL
P87C575EHAA I
P83C575EHPN
80C51
80C575
83C575
87C575
EC20D
2031h
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C 3311 transistor
Abstract: RZ2731B16W tRANSISTOR 2.7 3.1 3.5 GHZ cw
Text: RZ2731B16W Data sheet status date of Issue 1 ^ 5 3 ' •i f Product specification June 1992 NPN silicon pianar epitaxial -fJCTI I * r microwavejjower 11 _ — 7- SbE~~D 71 11 10 06 02 2b b 7 ■ OOHbSbO 14S OOHbSb A P P L IC A T IO N
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RZ2731B16W
711002b
T-33-11
C 3311 transistor
RZ2731B16W
tRANSISTOR 2.7 3.1 3.5 GHZ cw
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74LVC00
Abstract: 74LVC00D 74LVC00DB 74LVC00PW
Text: I Product Specification Philips Semiconductors Quad 2-input NAND gate QUICK REFERENCE DATA GND = 0 V ; Tmb = 25°C; t, = t, < 2.5 ns FEATURES • • • • • 74LVC00 Wide supply voltage range of 1.2 V to 3.6 V In accordance with JEDEC standard no. 8-1 A.
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74LVC00
74LVC00
7110fl2b
010D471
74LVC00D
74LVC00DB
74LVC00PW
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BUK455-600B
Abstract: transistor buk455 Philips 34D
Text: PHILIPS INTERN ATI ONAL bSE D m 711GÛ2b 0Db4101 7T5 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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0Db4101
BUK455-600B
-T0220AB
711Dfl2b
BUK455-600B
transistor buk455
Philips 34D
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SAA2520
Abstract: SAA2521 SAA2521GP audio compression
Text: Masking threshold processor for MPEG layer 1 audio compression applications SAA2521 • _ FEATURES GENERAL DESCRIPTION • Stereo or 2 -channel mono encoding The SAA2521 performs the adaptive allocation and scaling function for calculating the masking thresholds
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SAA2521
SAA2520.
CLK24
256fs
711062b
SAA2520
SAA2521GP
audio compression
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TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT
Abstract: No abstract text available
Text: _ A_^ _ TIP120 TIP121 PHILIPS INTERNATIONAL SbE ] • 711002b 0G435b2 T4b M P H I N T - 3 3 - 2 - ^ SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general
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TIP120
TIP121
711002b
0G435b2
T0-220
TIP125,
TIP126
TIP127.
TIP121
TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT
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Diode T2D od
Abstract: mab8400 MAB8048 PC10 PC11 PCD33XXA
Text: Philips Semiconductors Product specification 8-bit telecom microcontrollers PCD33XXA Family CONTENTS 1 INTRODUCTION 2 FEATURES 3 GENERAL DESCRIPTION 4 BLOCK DIAGRAM 5 PINNING INFORMATION 5.1 5.2 Pinning Pin description 6 FUNCTIONAL DESCRIPTION 6.1 6.2 6.3
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PCD33XXA
7110fl5fc,
00S3433
Diode T2D od
mab8400
MAB8048
PC10
PC11
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BT33
Abstract: TDA2595 horizontal output circuit with EHT colour tv circuit
Text: Product specification P h ilip s S e m ic o n d u c to rs V id e o P ro d u c ts Horizontal combination GENERAL D ESCRIPTION The TDA2595 js a monolithic integrated circud intended for use in colour television receivers. FEATURES • Positive video input, capacitively coupled
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TDA2595
TDA2595
200i2)
7110fl2b
007bEÃ
BT33
horizontal output circuit with EHT
colour tv circuit
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tip146
Abstract: philips TIP147 tip147
Text: TIP145 TIP146 TIP147 PHILIPS INTERNATIONAL SbE D • VllOfiSb D043St12 7Ö3 H P H I N 1 - 3 3 “ 3 I SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. SOT-93 plastic envelope. N-P-N complements are TIP140, TIP141
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TIP145
TIP146
TIP147
D043St
OT-93
TIP140,
TIP141
TIP142.
OT-93.
philips TIP147
tip147
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TDA1560Q
Abstract: CLASS H POWER AMPLIFIER gsgb Power IC btl class DBS17P DDT0511 MCD329 MLBQ TDA1560Q equivalent TDA1560Q/N4,112
Text: INTEGRATED CIRCUITS TDA1560Q 40 W car radio high power amplifier Preliminary specification Supersedes data of July 1994 File under Integrated Circuits, IC01 Philips S e m ico n d u cto rs • 7110flEb O m O S D E 3TD ■ This Material Copyrighted By Its Respective Manufacturer
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TDA1560Q
7110flEb
711Dfl2b
TDA1560Q
CLASS H POWER AMPLIFIER
gsgb
Power IC btl class
DBS17P
DDT0511
MCD329
MLBQ
TDA1560Q equivalent
TDA1560Q/N4,112
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smd diode a3l
Abstract: 44t SMD Current Limiting Circuit 44t smd 74LVC06A 74LVC06AD 74LVC06APW TSSOP14 44t smd ic
Text: Philips Semiconductors Product specification Hex inverter with open-drain outputs 74LVC06A FEATURES DESCRIPTION • 5 V tolerant inputs and outputs open drain for interfacing with 5 V logic The 74LVC06A is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most
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74LVC06A
74LVC06A
711Da2b
smd diode a3l
44t SMD Current Limiting Circuit
44t smd
74LVC06AD
74LVC06APW
TSSOP14
44t smd ic
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rx1 1240
Abstract: EIAJ RC 5325 82c150 vlit 1240 p82c200 CAN bus principle ne10 P8XC592 TOPFET high side switch P82C150
Text: Preliminary specification Philips Semiconductors CAN serial linked I/O device SLIO with digital and analog port functions CONTENTS 1 FEATURES 2 GENERAL DESCRIPTION 3 ORDERING INFORMATION 4 BLOCK DIAGRAM 5 FUNCTIONAL DIAGRAM 6 PINNING INFORMATION 6.1 6.2
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P82C150
P82C150
0CH53MÃ
rx1 1240
EIAJ RC 5325
82c150
vlit 1240
p82c200
CAN bus principle
ne10
P8XC592
TOPFET high side switch
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80C51
Abstract: 83C752 87C752 S87C752-1F28 S87C752-2F28 12VSS Philips 87C752
Text: I 711002b 0Dbbñ7D 333 • R H I N Product specification Philips Semiconductors Microcontroller Products 83C752/87C752 CMOS single-chip 8-bit microcontroller CMOS single-chip 8-bit microcontroller with A/D, PWM PIN CONFIGURATION DESCRIPTION The Philips 83C752/87C752 offers many of
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711002b
83C752/87C752
83C752/87C752
80C51
8XC752
83C752)
87C752)
16-bit
83C752
87C752
S87C752-1F28
S87C752-2F28
12VSS
Philips 87C752
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sn20v
Abstract: ja transistor Transistor B 886
Text: P H I L I P S IN T E R N A T IO N A L 41E D • 7 1 1 Dfi2 b 0030546 fl ■ P H I N T ' V / - « 3 P h ilip s S e m ic o n d u c to rs P ro du ct sp ecification High-voltage optocouplers SL5582/SL5583 FEA TUR ES • A pin distance of 10.16 mm • An external clearance of 9.6 mm
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SL5582/SL5583
sn20v
ja transistor
Transistor B 886
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