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    7110F Search Results

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    7110F Price and Stock

    Siemens 3RV27110FD10

    TMCB UL489 S00 0.5A SCREW
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    DigiKey 3RV27110FD10 Box 1
    • 1 $406.07
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    Mouser Electronics 3RV27110FD10
    • 1 $399.55
    • 10 $369.66
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    RS 3RV27110FD10 Bulk 3 1
    • 1 $422.31
    • 10 $401.2
    • 100 $380.08
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    Infineon Technologies AG TDA7110FHTMA1

    RF TX IC ASK 433-435MHZ 10TFSOP
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    TDA7110FHTMA1 Digi-Reel 1
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    Newark TDA7110FHTMA1 Cut Tape 1
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    Rochester Electronics TDA7110FHTMA1 97,128 1
    • 1 $0.9542
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    Win Source Electronics TDA7110FHTMA1 21,000
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    • 100 $1.0976
    • 1000 $0.8918
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    Toshiba America Electronic Components TB7110F(TE12L,Q)

    IC REG BUCK ADJ DL 8SOP-ADV
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    DigiKey TB7110F(TE12L,Q) Reel
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    Samtec Inc HW-22-10-S-D-497-110-.FX

    Conn Board Stacker HDR 44 POS 12.62mm Stack Height 2.54mm Solder ST Through Hole - Bulk (Alt: HW-22-10-S-D-497-110-.FX)
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    Avnet Americas HW-22-10-S-D-497-110-.FX Bulk 1
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    Master Electronics HW-22-10-S-D-497-110-.FX
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    • 100 $5.17
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    Sager HW-22-10-S-D-497-110-.FX
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    Alpine Electronics (Asia) Ltd RK0971110F25C1B103

    Potentiometers 9MM POT
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    Mouser Electronics RK0971110F25C1B103
    • 1 $9.85
    • 10 $9.5
    • 100 $7.04
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    7110F Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BDT65F; BDT65AF BDT65BF; BDT65CF PHILIPS INTERNATIONAL SbE 7110flSb 00435^0 4Sci M P H I N T ~ 33 SILICON DARLINGTON POWER TRANSISTORS N PN silicon darlington power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.


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    BDT65F; BDT65AF BDT65BF; BDT65CF 7110flSb BDT65F PDF

    TDA8709

    Abstract: IEC134 S028 TDA8709T fdk id
    Text: Philips Semiconductors Product specification T -1 7 -0 7 -1 3 Video analog input interface TDA8709 PHILIPS INTERNATIONAL SbE D 7110fi2b 0 0 3 7 C H 3 FEATURES APPLICATIONS • 8-bit resolution • Video signal processing • Sampling rate up to 30 MHz • Digital picture processing


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    T-77-07-IZ TDA8709 7110fl2b 0037DT3 TDA8709 711Qfl5b D03710b IEC134 S028 TDA8709T fdk id PDF

    AB marking code diode

    Abstract: BFR101B BFR101A
    Text: 7110fl£b G O b T l b M 435 • P H I N BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR S ym m etrical n-channel silicon ju n c tio n fie ld -e ffe c t tran sisto r, designed p rim a rily fo r use as a source fo llo w e r w ith the in p u t protected against successive voltage surges by a fo rw a rd and reverse integrated


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    BFR101A BFR101B BFRT01B AB marking code diode BFR101B PDF

    BT153

    Abstract: TAG thyristor Thyristor TAG thyristor TAG 13 BT153 fast turn off philips thyristor 239 thyristor TRIGGER PULSE TRANSFORMER 7Z82062
    Text: PHILIPS INTERNATIONAL SflE J> 7110fl2t, 0053035 301 • PHIN B l iby _y F A S T TURN-OFF TH YR IS TO R Glass-passivated fast-turn-off thyristor in a T 0 -2 2 0 A B envelope, intended fo r use in inverter, pulse and switching applications. Its characteristics make the device extremely suitable for use in regulator,


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    7110fl2t, T0-220AB T0-220AB. BT153 TAG thyristor Thyristor TAG thyristor TAG 13 BT153 fast turn off philips thyristor 239 thyristor TRIGGER PULSE TRANSFORMER 7Z82062 PDF

    MCD288

    Abstract: The Diode with Package Outlines 1993 SOT96A 1545A pulse to sinewave convertor DDSS431 TDA1545A TDA1545AT
    Text: PHILIPS INTERNATIONAL bOE D • 7110fl2b D O S S ^ S 51b « P H I N 'T ' Philips Preliminary specification Stereo continuous calibration DAC TDA1545A FEATURES GENERAL DESCRIPTION • Space saving package S08 or DIL8


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    711Dfl2b 16-bit MCD288 The Diode with Package Outlines 1993 SOT96A 1545A pulse to sinewave convertor DDSS431 TDA1545A TDA1545AT PDF

    BUK10B-50US

    Abstract: philips ldh d6506 BUK106-50L BUK106-50S buk106
    Text: bSE » PHILIPS INTERNATIONAL • 7110fl2b D0b3flbS 2TM BiPHIN Product Specification Philips Semiconductors PowerMOS transìstor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic


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    7110fl2b BUK106-50L7S BUK106-50LP/SP BUK106-50L/S BUK106-50I7S BUK10B-50US philips ldh d6506 BUK106-50L BUK106-50S buk106 PDF

    ltd133

    Abstract: 7 segments display philips LTD133F-21 12 pin 7 segment clock Liquid Crystal 12 pin 4 digit 7 segment display
    Text: PHILIPS INTERNATIONAL Data sheet status Product specification date of issue July 1990 . bOE 7110flSb 0 D 5 7 0 2 5 7' 4 LTD133 Ü51 IPHIN /S t Liquid crystal display DEVICE DESCRIPTION The LTD133 is a 3 1/2-digit 7 segment clock display with AM and PM functions. It is designed for use with the


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    LTD133 7110flSb 0D57025 LTD133 PCF1175 7Z22271 LTD133F-21 LTD133F-21 7 segments display philips 12 pin 7 segment clock Liquid Crystal 12 pin 4 digit 7 segment display PDF

    BUK426-100B

    Abstract: transistor BU 110 BUK426-100A
    Text: Philips Components Data sheet status Product specification date of issue March 1991 PHILIPS 7 - 3 ^ -/ / B U K 4 2 6 - 1OOA/B PowerMOS transistor 5bE T> INTERNATIONAL 7110fl2t 0044120 flSD I_ I GENERAL DESCRIPTION N-channel enhancement mode


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    BUK426-1OOA/B 7110fl2t D0441EG OT199 -100A -100B BUK426-100B transistor BU 110 BUK426-100A PDF

    NDS 40-20

    Abstract: BUK437-500B DIODE BB2
    Text: PHILIPS INTERNATIONAL fc.5E D m 7110flSb □□t.3c121 RS3 • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    711002b BUK437-500B NDS 40-20 BUK437-500B DIODE BB2 PDF

    25CC

    Abstract: AM2952 MB2052 MB2052B
    Text: T -5 2 ~ 3 -£ S Philips Semiconductors Advanced BiCMOS Products Objective specification Dual octal registered transceiver 3-State PHILIPS INTERNATIONAL FEATURES • StE D • 7110fl2fc. □03clclll 7S3 H P H I N QUICK REFERENCE DATA CONDITIONS T«ni> = 25CC; GND = 0V


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    16-bit AM2952 500mA MB2052 25CC MB2052B PDF

    transistor 603 47e

    Abstract: BTB 600 BR BLV103 71009 SB
    Text: Philips Semiconductors 7110f l 5b D Q b B ll^ T 4fl ^ B P H IN Product specification UHF power transistor BLV103 bS E T> PHILIPS INTERNATIONAL FEATU RES • Internal matching for an optimum wideband capability and high gain • Emitter-ballasting resistors for


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    71IDA5b 00b31I^ BLV103 OT171 MSA45Ã MRA360 transistor 603 47e BTB 600 BR BLV103 71009 SB PDF

    tam s8

    Abstract: C101 LTA343F-11 LTA343R-11
    Text: PHILIPS INTERNATIONAL Data sheet status Pro du ct specification date of issue J u ly 1990 bOE D I 7110flSb 0 0 5 7 G 1 3 30T LTA343 Liquid Crystal Display QUICK REFERENCE DATA DEVICE DESCRIPTION The LTA343 is a 40-character, 2-line dot matrix display. Typical applications include hand held equipment and


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    LTA343 7110flSb 0057G13 LTA343 40-character, 160x27 7110a2b tam s8 C101 LTA343F-11 LTA343R-11 PDF

    transistor tt 2222

    Abstract: Trimmer 10-60 pf transistor h 1061 15 w RF POWER TRANSISTOR NPN bly87c IEC134 yl 1060
    Text: PHILIPS INTERNATIONAL b SE D • 7110flSb GübBSt.3 «PHIN BLY87C J V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and


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    711002b BLY87C transistor tt 2222 Trimmer 10-60 pf transistor h 1061 15 w RF POWER TRANSISTOR NPN bly87c IEC134 yl 1060 PDF

    SL 100 NPN Transistor

    Abstract: blt91 International Power Sources ferroxcube wideband hf choke Philips 4312 020 TRANSISTOR SL 100 of transistor sl 100 sl 100 transistor
    Text: PHILIPS INTERNATIONAL bSE D B 7110fl5Li DOLEb71 0 4^1 • PHIN BLT91/SL _ U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in handheld radio stations in the 900 MHz communications band.


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    00L2b71 BLT91/SL OT-172D) 7110fl2b D0bSb77 SL 100 NPN Transistor blt91 International Power Sources ferroxcube wideband hf choke Philips 4312 020 TRANSISTOR SL 100 of transistor sl 100 sl 100 transistor PDF

    b57 diode

    Abstract: M3245 M3244 diode 1123 07s BR211 BR211-100 M3243 BI 1123 M324
    Text: 5bE D • 7110flSb 0G410 bD ÛÔ4 D E V E LO P M E N T DATA IPHIN T -M -2 L 3 - BR211 SERIES T h is data sheet contains advance Inform ation and specifications are subject to change w ith o u t notice. PHILIPS 5bE D ^ INTERN A T I O N A L UN BREAKOVER DIODES


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    7110flSb 0G410bD BR211 BR211-100 b57 diode M3245 M3244 diode 1123 07s M3243 BI 1123 M324 PDF

    MRB11040W

    Abstract: QQHb32b International Power Sources NPN Silicon Epitaxial Planar Transistor copper permittivity
    Text: 33'/3 Preliminary specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor P H IL IP S MRB11040W 7110fi2Li 004b32M 0M2 M P H I N SbE D INTERNATIONAL FEATURES DESCRIPTION APPLICATIONS • Input prematching cell allows an


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    FO-67 MRB11040W 0G4b32M T-33-13 711002b 0D4b32fl MRB11040W QQHb32b International Power Sources NPN Silicon Epitaxial Planar Transistor copper permittivity PDF

    vexta

    Abstract: TI TV multi band tuner IC Divider QFP44 SDIP42 TDA8742 TDA8742H 0.1 mKF capacitor
    Text: INTEGRATED CIRCUITS & S M U T TDA8742; TDA8742H Satellite sound circuit with noise reduction Product specification Supersedes data of November 1992 File under Integrated Circuits, IC02 October 1994 Philips Semiconductors PHILIPS PHILIPS 7110fl2fc. 0 0 7 6 1 3 4


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    TDA8742; TDA8742H 7110fl2fci Q07fll34 7110fl2b vexta TI TV multi band tuner IC Divider QFP44 SDIP42 TDA8742 TDA8742H 0.1 mKF capacitor PDF

    BUK452-100B

    Abstract: BUK452-100A T0220AB
    Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b DDbHOBl SSI « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    7110fl2b BUK452-100A/B T0220AB BUK452-100B BUK452-100A T0220AB PDF

    LHi 874

    Abstract: LHi 888 sp1191 HP611 SAA7194 APER XD7 video scaler SAA7186 SAA7191B VR06
    Text: INTEGRATED CIRCUITS DATA SHEET S A A 7 1 9 4 Digital video decoder and scaler circuit DESC Product specification Philips Semiconductors April 1994 I ««y « f f PHILIPS This_Material Copyriqhted By Its Respective Manuf actjixer • 7110fldb aG7*H04 lib ■


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    SAA7194 007clcà LHi 874 LHi 888 sp1191 HP611 SAA7194 APER XD7 video scaler SAA7186 SAA7191B VR06 PDF

    RZ2731B60W

    Abstract: tRANSISTOR 2.7 3.1 3.5 GHZ cw
    Text: • 3 3 - 1 3 RZ2731B60W PHILIPS INTERNATIONAL SbE D 7110fl2ti 004Li57ö OflS M P H I N PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power am plifier w ith a frequency range o f 2.7 to 3.1 GHz.


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    RZ2731B60W 711002b 004b5Ã RZ2731B60W tRANSISTOR 2.7 3.1 3.5 GHZ cw PDF

    MX0912B250Y

    Abstract: 33-AS IEC134 015 capacitor philips
    Text: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high


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    33-AS" MX0912B250Y G04b34b T-33-Ã 711Dfl2b 004b352 0QMb43? MX0912B250Y 33-AS IEC134 015 capacitor philips PDF

    TRANSISTOR BO 344

    Abstract: TRANSISTOR BO 341 tny 175 BUK455 BUK455-100A BUK455-100B T0220AB data transistor 1650
    Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b ODbMOfll 067 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    7110flSb BUK455-100A/B T0220AB BUK455 -100A -100B TRANSISTOR BO 344 TRANSISTOR BO 341 tny 175 BUK455-100A BUK455-100B data transistor 1650 PDF

    BLX13

    Abstract: BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971
    Text: II PHI L IP S I N T E R N A T I O N A L MAINTENANCE TYPE MIE B J> 7110flSb O D E 7 7 C H 2 D P H I N II BLX13 H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and AB and in f.m. transmitting appli­ cations in class-C with a supply voltage up to 28 V. The transistor is resistance stabilized and tested


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    711005t. BLX13 r-33-// BLX13 BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971 PDF

    SOT227B package

    Abstract: mb 428 mb 428 ic data ESM4045A ESM4045D SOT227A 4045D
    Text: PHILIPS INTERNATIONAL 45E ]> 7110fl2ti 0031233 T M P HIN ESM4045A V ESM4045D(V) T '- 3 3 - d Q SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).


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    711082b ESM4045A lESM4045D 4045D ICsat/50 Bon11 Csat/50; 711002b SOT227B package mb 428 mb 428 ic data ESM4045D SOT227A PDF