2N6661
Abstract: 2N6660 2N6661 transistor 2N6659 max 1988
Text: MIE D m 2N6659 2N6660 2N6661 711Gfl2b □Q2t.7c 3 1 • P H I N PHILIPS INTERNATIONAL T-31'0& N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-39 envelope and designed for application as low-power, high-frequency inverters and. line drivers.
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2N6659
2N6660
2N6661
2N6661
T-39-05
2N6661 transistor
max 1988
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5534D
Abstract: 5533N ne5533n ZT04 TL083 NE5533AN NE5534AD 5534 amp 5534A NE5533D
Text: PHILIPS INTERNATIONAL SßE D • 711Gfl2b DDSDÖD1 SG4 H P H I N Philips Semiconductors-Signetics Linear Products Hroauci specmcaiion M c c c q q /c c q q A / Dual and single low noise op amp NE/SA/SE5534/5534A i o DESCRIPTION FEATURES The 5533/5534 are dual and single
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711Gfl2b
NE5533/5533A/
NE/SA/SE5534/5534A
TL083,
zT04k
NE5533/5533A/
7110fl2b
5534D
5533N
ne5533n
ZT04
TL083
NE5533AN
NE5534AD
5534 amp
5534A
NE5533D
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BUK455-600B
Abstract: LG 631
Text: PHILIPS bSE J> INTERNATIONAL m 711Gfl2b 0Db4101 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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711Gfl2b
0Db4101
BUK455-600B
PINNING-T0220AB
BUK455-600B
LG 631
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711Gfl2b
Abstract: IEC134 BFQ295 BFQ296
Text: Philips Semiconductors Preliminary specification NPN HDTV video transistor philips BFQ296 ShE T> international FEATURES 711Gfl2b 0G4Sb7fl D7T « P H I N PINNING • High breakdown voltages • Low output capacitance 1 emitter • High gain bandwidth product
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BFQ296
711Gfl2b
BFQ295.
BFQ296
OT128B
OT128B.
IEC134
BFQ295
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Philips 3.5 digit 7 segment lcd display
Abstract: panel-meter 40 PIN 4 digit lcd display LTD241R-12
Text: P H I L IP S I N T E R N A T I O N A L bGE m T> 711Gfl2b DGS 7 0Ô 1 =150 « P H I N Philips Components LTD241 Liquid crystal display Data sheet status P roduct specification date of issue July 1990 DEVICE DESCRIPTION r > H - 3S7 QUICK REFERENCE DATA The LTD241 is a 3 1/2-digit, 7-segment m ulti-function LCD
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711Gfl2b
LTD241
LTD241R-12
LTD241R-22
LTD241F-22
Philips 3.5 digit 7 segment lcd display
panel-meter
40 PIN 4 digit lcd display
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Untitled
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL bSE D Philips Semiconductors_ • 711Gfl2b DGbE33D 5Ö3 ■ P H I N _ Preliminary specification BT139 series H Triac GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated 16 A triacs intended for use in applications
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711Gfl2b
DGbE33D
BT139
T0220AB
BT139-
711Dfl2b
0Db233E
T0220AB;
T0220
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transistor B 1184
Abstract: BFW30 transistor b 1185 philips BFW30
Text: Product specification Philips Semiconductors NPN 2 GHz wideband transistor P H I L IP S I N T E R N A T I O N A L DESCRIPTION * 7 ^ 3 /"S SbE D • BFW30 '? 711Gfl2b O O M b O E b 172 « P H I N PINNING NPN transistor in a TO-72 metal envelope, with Insulated electrodes
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BFW30
7110flSb
transistor B 1184
BFW30
transistor b 1185
philips BFW30
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dsb 3305
Abstract: ic-110 LUE2003S LUE2009S
Text: ^ SbE J> PHILIPS INT ERNATIONAL • 3 3 -0 5 LUE2003S LUE2009S 711Gfl2b DD4ti2S0 253 ■ PHIN MICROWAVE LINEAR POWER TRANSISTORS NPN silicon transistors for use in common-emitter class-A linear power amplifiers up to 4 GHz. Diffused emitter ballasting resistors, a self-aligned process entirely ion implanted and gold sandwich
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LUE2003S
LUE2009S
711Gfl2b
004fc
FO-163
LUE2009S
dsb 3305
ic-110
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PHILIPS discrete LED
Abstract: No abstract text available
Text: Philips Semiconductors Data sheet status Product Specification date of issue August 1990 PHILIPS OM2860/OM2870 Hybrid integrated circuits for inductive proximity detectors FEATURES • Extra small dim ensions. 711Gfl2b 0047110 LÔ3 • P H I N 5L>E D INTERNATIONAL
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OM2860/OM2870
711Gfl2b
PHILIPS discrete LED
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2N3927
Abstract: 2N3926 2N3924 2N3924h 7z08 4312 020 36640 philips 1969 transistor 2N3 400Ic philips 1968
Text: MIE D m 711Gfl2b 002Ö057 1 2N3924 2N3926 2N3927 [PHIN PHILIPS INTERNATIONAL r - 3 3 - O SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS The 2N3924 is an n-p-n overlay transistor in aTO-39 metal envelope with the collector connected to the case. The 2N3926 and the 2N3927 are n-p-n overlay transistors in T0-60 metal envelopes with the emitter
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Q02flGSfl
2N3924
2N3926
2N3927
T-33-0?
2N3924
2N3926
2N3927
T0-60
2N3924h
7z08
4312 020 36640
philips 1969
transistor 2N3
400Ic
philips 1968
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UB22L
Abstract: BT138 Series E bt138 AX05 triacs BT 134 w
Text: PHILIPS INTERNATIONAL bS E J> m 711Gfl2b GDb52fi4 Ô 7 3 « P H I N I BT138 SERIES _ TRIACS Glass-passivated 12 ampere triacs intended for use in applications requiring high bidirectional transient and blocking voltage capability, and high thermal cycling performance w ith very low thermal
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711Gfl2b
GDb52fi4
BT138
--220AB
BT138G
711002b
UB22L
BT138 Series E
AX05
triacs BT 134 w
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87C52
Abstract: 556 Dual on off Timer 80C32 Philips P87C52EFAA 80C32 80C51 80C52 8XC52 ESA 80C51 DESIGN P80C32
Text: INTEGRATED CIRCUITS Product specification 1995 Mar 31 IC20 Philips Semiconductors PHILIPS PHILIPS • 711Gfl2b 0 0 0 0 1 2 b 5 30 m This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors Product specification CMOS single-chip 8-bit microcontrollers
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000012b
80C32/80C52/87C52
80C32/80C52/87C52
8XC52
711002b
87C52
556 Dual on off Timer
80C32 Philips
P87C52EFAA
80C32
80C51
80C52
ESA 80C51 DESIGN
P80C32
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TR0 TF0
Abstract: LTD222R-12 Philips 3.5 digit 7 segment lcd display Philips 7 digit 7 segment lcd display 3565 LTD222
Text: PHILIPS INTERNATIONAL bOE J> 7110 6Bh 0057045 Philips Components status Product specification date of issue July 1990 ip h in LTD222 Data sheet la o Liquid crystal display QUICK REFERENCE DATA Viewing area dimensions DEVICE DESCRIPTION The LTD222 is a 3 1/2-digit, 7-segment, multi-function
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LTD222
LTD222
7Z22302
LTD222R-11
IEC134)
LTD222R-12
LTD222F-12
LTD222R-21
LTD222F-21
TR0 TF0
Philips 3.5 digit 7 segment lcd display
Philips 7 digit 7 segment lcd display
3565
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SFE10.52MJA10
Abstract: 8745H
Text: Philips Semiconductors Preliminary specification Satellite sound receiver with l2C-bus control TDA8745 FEATURES • On-chip frequency synthesizer and mixer: - tuning range 4 to 9.77 M Hz - reference oscillator 4 M H z using a crystal or 4 MHz frequency source
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TDA8745
711Dfl2ti
0101E00
SFE10.52MJA10
8745H
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bd947
Abstract: b0945 BD945 m lc 945 BD943 BD944
Text: BD943 BD945 BD947 H ILIPS INTERNATIONAL _ SbE J> H 711002b 0043070 SOfl • PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.
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BD943
BD945
BD947
7110fllT\
043070T[
BD944;
T-33-17
BD945
bd947
b0945
m lc 945
BD944
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FULL WAVE RECTIFIER CIRCUITS
Abstract: NE571D NE570 Audio Dynamic Noise Reduction NE570N NE571N sa571 equivalent NE571 15Hz-20kHz FULL WAVE RECTIFIER -datasheet operational amplifier discrete schematic
Text: P roduct specification P hilips S em iconductors-Sigrietics RF C om m unications Products Compandor NE570/571/SA571 PIN CONFIGURATION DESCRIPTION FEATURES The NE570/571 is a versatile low cost dual gain control circuit in which either channel may be used as a dynamic range compressor
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NE570/571/SA571
NE570/NE571
NE570/571
10-to
711002b
FULL WAVE RECTIFIER CIRCUITS
NE571D
NE570 Audio Dynamic Noise Reduction
NE570N
NE571N
sa571 equivalent
NE571
15Hz-20kHz
FULL WAVE RECTIFIER -datasheet
operational amplifier discrete schematic
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7FLU
Abstract: pin configuration of i3 processor FM SOUND PROCESSOR TDA3857 IEC134 TDA3856 TDA3858 SAW-Filter
Text: INTEGRATED CIRCUITS S K l i i T TDA3857 Quasi-split sound processor with two FM demodulators Product specification Supersedes data of October 1990 File under Integrated Circuits, IC02 June 1994 Philips Semiconductors PHILIPS PHILIPS V j? 7110fl2b D07fl00S T27 •
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TDA3857
7110fl2b
D07fl00S
TDA3856
TDA3858
7FLU
pin configuration of i3 processor
FM SOUND PROCESSOR
TDA3857
IEC134
TDA3856
TDA3858
SAW-Filter
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RFX85
Abstract: BFX85 b9036 BFX84 OFW 361 BS949 b9031 J100 silicon planar epitaxial transistors t100c
Text: BFX84 BFX85 PHILIPS INTERNATIONAL SbE D • 711002b 0045230 0^7 M P H I N T - 2 7 - Z SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in TO-39 metal envelopes for general purpose industrial applications. Q U IC K R E F E R E N C E D A T A BFX84 BFX85
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BFX84
BFX85
711002b
BFX84
RFX85
BFX85
b9036
OFW 361
BS949
b9031
J100
silicon planar epitaxial transistors
t100c
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DH47
Abstract: BUK571 BUK571-100A BUK571-100B buk541-100 K571
Text: Philips Components D ata sheet status Prelim inary specification date of issue M arch 1991 R eplaces B U K 54 1-1 00A /B BUK571-100A/B PowerMOS transistor Logic level FET SbE D PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power
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BUK541-100A/B
-SOT186A
BUK571-100A/B
DH47
BUK571
BUK571-100A
BUK571-100B
buk541-100
K571
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24-character
Abstract: C100 C101 C120 LTA342F-11 LTA342R-11
Text: PHILIPS INTERNATIONAL Data sheet status Product specification date of issue July 1990 bO E D • 711DÔEb 00S700fi LTA3 4 2 T4E IPHIN 7- V /- 3 S Liquid Crystal Display DEVICE DESCRIPTION The LTA342 is a 24-character, 2-line dot matrix display. Typical applications include hand held equipment and
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711065b
LTA342
LTA342
24-character,
711Gfl2b
0057D1B
24-character
C100
C101
C120
LTA342F-11
LTA342R-11
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MX0912B250Y
Abstract: 33-AS IEC134 015 capacitor philips
Text: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high
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33-AS"
MX0912B250Y
G04b34b
T-33-Ã
711Dfl2b
004b352
0QMb43?
MX0912B250Y
33-AS
IEC134
015 capacitor philips
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cerdip 300mil
Abstract: plji 74F30240 74F30244 N74F30240F N74F30240N N74F30244F N74F30244N F3024
Text: HILIPS i n t e r n a t i o n a l Philips Samiconductors-SigneHcs Document No. 853-1157 ECN No. 97652 Date of issue September 15,1989 Status Product Specification FAST Products FEATURES • Ideal for driving transmission lines or backplanes. 160mA lQL Ideal for applications with imped
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160mA
F30240
F30244
160mA
7110fl2b
00S2747
74F30240.
74F30244
500ns
cerdip 300mil
plji
74F30240
74F30244
N74F30240F
N74F30240N
N74F30244F
N74F30244N
F3024
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LM311 zero crossing detector
Abstract: LM111 LM211 zero crossing detector lm1111 squarer lm311 LM311 LM311BN LM311A magnetic transducer interface lm311 8pin
Text: P hilips Sem iconductors Linear Products P roduct specification Voltage comparator _ LM111/211/311/ LM311B DESCRIPTION PIN CONFIGURATION The LM111 series are voltage comparators that have input currents approximately a hundred times lower than devices like the iA710.
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LM111/211/311/
LM311B
LM111
iA710.
LM311B,
7110flBb
007flbP4
LM111/211/311/
LM311 zero crossing detector
LM211 zero crossing detector
lm1111
squarer lm311
LM311
LM311BN
LM311A
magnetic transducer interface
lm311 8pin
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SILICON DIFFUSED POWER TRANSISTOR
Abstract: T200I specification of curve tracer bu705 philips semiconductor BU705 700 v power transistor
Text: Philips Semiconductors Product specification Silicon diffused power transistor BU705 High-voltage, high-speed switching, glass passivated npn power transistor in a SO T93A envelope, intended fo r use in horizontal deflection circuits o f television receivers.
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BU705
OT93A
OT93A.
BU705
7Z810Ã
711GflEfa
77Mfib
SILICON DIFFUSED POWER TRANSISTOR
T200I
specification of curve tracer
bu705 philips semiconductor
700 v power transistor
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