International Power Sources
Abstract: LWE2025R
Text: T -3 3 -0 5 LWE2025R / \ PHILIPS INTERNATIONAL 5bE D • 711Dfl5b DDMbSTfc. 35fl BiPHIN MICROWAVE LINEAR POWER TRANSISTOR NPN silicon p ow er tra n sisto r fo r use in a co m m o n -e m itte r,cla ss-A a m p lifie r up to 2.3 G H z in CW c o n d itio n s in m ilita ry and professional applications.
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33-OS
LWE2025R
7110fl5b
FO-93)
MCD656
T-33-05
International Power Sources
LWE2025R
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collision
Abstract: NE8392C NE8392CA NE8392CN NE83C92 NE83Q92 NE83Q93 "network interface controller"
Text: INTEGRATED CIRCUITS NE8392C Coaxial transceiver interface for Ethernet/Thin Ethernet Product specification 1995 May 1 IC19 Philips Sem iconductors PHILIPS 711Dfl5b □Dflclö?D =JD1 Philips Semiconductors Product specification Coaxial transceiver interface for Ethernet/Thin Ethernet
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NE8392C
SD00283
NE8392C
OT261-3
MO-047AB
7110A2L
collision
NE8392CA
NE8392CN
NE83C92
NE83Q92
NE83Q93
"network interface controller"
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1641A
Abstract: 74ABT245 74ABT374 74ABT646 74ABT646D 74ABT646DB 74ABT646N 74ABT646 Philips
Text: PHILIPS INTERNATIONAL bSE D • 711Dfl5b □□5754b 3bD ■ PHIN Philips Sem iconductors Advanced BiCMOS Products Product specification Octal bus transceiver/register 3-State — 74ABT646 — — — — —— — QUICK REFERENCE DATA FEATURES . Combines 74ABT245 and 74ABT374
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7110fl2b
005754b
74ABT646
74ABT245
74ABT374
64mA/-32mA
500mA
74ABT646
74ABT
1641A
74ABT646D
74ABT646DB
74ABT646N
74ABT646 Philips
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K 192 A transistor
Abstract: BUK438-500B
Text: bSE D PHILIPS INTERNATIONAL m 711Dfl5b DGbBTBl ÖTE « P H I N Product Specification Philips Semiconductors Power MOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711Dfl2b
0Db3T31
BUK438-500B
7110flSL
K 192 A transistor
BUK438-500B
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ic TT 2222
Abstract: transistor tt 2222 philips carbon film resistor carbon resistor TT 2222 npn TT 2222 BLW98 transistor blw98
Text: PHILIPS INTERNATIONAL bSE D • PHIN 711Dfl5b 00b3432 124 JL BLW98 U.H.F. LINEAR POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear u.h.f. amplifiers o f T V transposers and transmitters in band IV-V, as well as fo r driver stages in tube systems.
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711005b
00b3432
BLW98
D0b344D
ic TT 2222
transistor tt 2222
philips carbon film resistor
carbon resistor
TT 2222 npn
TT 2222
BLW98
transistor blw98
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as6 diode
Abstract: BYX96-300 diode as6 BYX96 BYX96-300R BYX96-300U
Text: BYX96 SERIES PHILIPS INTERNATIONAL SbE D • 7110ÔEb OD41bSS 1T3 ■ PHIN T ~ 0 - n RECTIFIER DIODES A ls o availab le to B S 9 3 3 1 - F 1 2 9 S ilic o n re ctifie r dio d es in m etal envelopes sim ila r to D O -4 , intended fo r use in p o w er rectifier
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BYX96
BS9331-F129
BYX96-300
BYX96-300R
1600R.
i-oi-19
7110fl2b
as6 diode
diode as6
BYX96-300U
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BD201F
Abstract: BDX77F BD203F BD202F BD204F BDX78F
Text: J PHILIPS INTERNATIONAL SbE D • BD201F; BD203F; BDX77F 7110a2b 0Gl+2ÛDfi Ô4S ■ PHIN T - 3 3 ' O cf SILICON EPITAXIAL POWER TRANSISTORS NPN Silicon power transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are B D 202F, BD204F and B D X 78F .
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BD201F;
BD203F;
BDX77F
7110a2b
T-33-0
OT186
BD202F,
BD204F
BDX78F.
BD201F
BDX77F
BD203F
BD202F
BDX78F
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semiconductor LINEAR
Abstract: NE529 0405B IN914 NE529D NE529N OTO70
Text: Product specification Philips Semiconductor* Unear Products Voltage comparator NE529 PIN CONFIGURATIONS DESCRIPTION The NE529 is a high-speed analog voltage comparator which, for the first time, mates state-of-the-art Schottky diode technology with the conventional linear process. This allows simultaneous
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NE529
NE529
711Dfl5b
007fib73
semiconductor LINEAR
0405B
IN914
NE529D
NE529N
OTO70
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DH47
Abstract: BUK571 BUK571-100A BUK571-100B buk541-100 K571
Text: Philips Components D ata sheet status Prelim inary specification date of issue M arch 1991 R eplaces B U K 54 1-1 00A /B BUK571-100A/B PowerMOS transistor Logic level FET SbE D PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power
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BUK541-100A/B
-SOT186A
BUK571-100A/B
DH47
BUK571
BUK571-100A
BUK571-100B
buk541-100
K571
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transistor 45 f 122
Abstract: BFQ32C SOT173 GHz PNP transistor BFP96
Text: Product specification Philips Semiconductors 'P3/'23 PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D BFQ32C 7 1 1 0 0 2 b 0 0 4 5 4 2 4 03b • P H I N PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT 173 and SOT 173X
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BFQ32C
OT173
OT173X
BFP96.
711002b
OT173.
D0M542fl
transistor 45 f 122
BFQ32C
SOT173
GHz PNP transistor
BFP96
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M1434
Abstract: Gate Turn-Off Thyristors LS025 BTV58 BTV58-600R 600R CG10A 1000R
Text: PHILIPS 5ÔE D INTERNATIONAL • 7110ÖEb 0053003 OtM Bi PHIN BTV58 SERIES J \ _ FAST GATE TURN-OFF THYRISTORS T h y risto rs in T 0 - 2 2 0 A B envelopes capable o f being turned both on and o f f via the gate. T h e y are suitable fo r use in high-frequency inverters, pow er supplies, m otor c o n tro l etc. T h e devices have no
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BTV58
T0-220AB
BTV58â
1000R
711005b
00S30TM
M1434
Gate Turn-Off Thyristors
LS025
BTV58-600R
600R
CG10A
1000R
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3067
Abstract: BD677A BD679A BD675A BD676A BD678A BD680A
Text: P h ilip s S e m icon d u ctors Prelim inary sp ecification Silicon Darlington power transistors PHILIPS INTERNATIONAL D ESCRIPTION 711002b 004BT7S bBl WÊ PHIN r -3 3 -z * f Q U IC K R E F E R E N C E DATA NPN epitaxial base transistors in a monolithic Darlington circuit in a
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BD675A/BD677A/BD679A
O-126
BD676A,
BD678A
BD680A
711002b
004BT7S
BD675A
BD677A
3067
BD677A
BD679A
BD675A
BD676A
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74f162 pc
Abstract: 74f162 U5033 74F160A 74F161A 74F162A 74F163A F161A F163A N74F160AN
Text: PHILIPS INTERNATIONAL Philips Semiconduciors-SIgneHcs Document No. 853-0347 ECN No. 0347 Date of issue October 7,1988 Status Product Specification S fiE I • T H O S E b 0 0 5 1 1 3 2 TS b IPHIN FAST 74F160A,74F161 A 74F162A,74F 163A Counters ’F160A, 'F162A BCD Decade Counter
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F160A
7110fiEb
0DSn32
74F160A
74F162
74F163A
F160A,
F162A
F161A,
F163A
74f162 pc
U5033
74F161A
74F162A
F161A
N74F160AN
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circuit diagram of rc transmitter and receiver
Abstract: philips e3 Philips KS capacitors SC68C562 SC68C562C1N SCN68562
Text: P H IL IP S I N T E R N A T I O N A L bSE D B3 7 1 1 0 B S b OOblBlfl 10Ô « P H I N Philip* Semiconductor* Data Communication* Product* Product «pacification CMOS Dual universal serial communications controller CDUSCC erfiorceo SC68C562 PIN CONFIGURATIONS
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SC68C562
SC68C562
circuit diagram of rc transmitter and receiver
philips e3
Philips KS capacitors
SC68C562C1N
SCN68562
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BYX38-300
Abstract: BYX38 BYX38-300R iC-NC BYX38/300 T0117
Text: BYX38 SERIES SbE D PHILIPS INTERNATIONAL • 711QÛ2b D D M l b m 3TT ■ P H I N T - 0 M 7 SILICON RECTIFIER DIODES Silicon rectifier diodes in DO-4 metal envelopes, intended for use in power rectifier applications. The series consists of the following types:
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BYX38
711QflSb
BYX38-300
BYX38-300R
1200R.
10-32UNF
iC-NC
BYX38/300
T0117
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transistor 1BT
Abstract: BDT62C PHILIPS npn 1bt BDT63B
Text: BDT63; 63A BDT63B; 63C _ PHILIPS "INTERNATIONAL" StEB A • v _ 7110flEb 0043551, TTT - PHIN T - J J - Z 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general
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BDT63;
BDT63B;
7110flEb
T0-220
BDT62,
BDT62A;
BDT62B
BDT62C.
BDT63
T-33-29
transistor 1BT
BDT62C PHILIPS
npn 1bt
BDT63B
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MCB770
Abstract: DIP28 MAB8048 PCA3351C PCA3351CP PCA3352C PCA3352CP PCA3353C PCD33XXA S52 EEPROM
Text: Product specification Philips Semiconductors 8-bit microcontroller with DTMF generator PCA3351C; PCA3352C; and 128 bytes E E P R O M _ PCA3353C CONTENTS 1 FEATURES 2 GENERAL DESCRIPTION 3 ORDERING INFORMATION 4 BLOCK DIAGRAM 5 PINNING INFORMATION
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PCA3351C;
PCA3352C;
PCA3353C
MCB770
DIP28
MAB8048
PCA3351C
PCA3351CP
PCA3352C
PCA3352CP
PCA3353C
PCD33XXA
S52 EEPROM
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SR 4216 D TRANSISTOR SWITCHING
Abstract: SR 4216 D TRANSISTOR CXA 1376 "Pager receiver" CTC 1351 CTC 1351 transistor CXA 1364 transistor ctc 1351 uaa2083 173 MHz RF receiver
Text: Productspecification Philips Semiconductors Advanced pager receiver UAA2080 FEATURES G ENERAL DESCRIPTION • Wide frequency range: VHF, UHF and 900 MHz bands The UAA2080 is a high-performance low-power radio receiver circuit primarily intended for VHF, UHF and
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UAA2080
PCA5000A,
PCF5001
PCD5003
TQFP32;
7110fi5ti
MLCZ39
SR 4216 D TRANSISTOR SWITCHING
SR 4216 D TRANSISTOR
CXA 1376
"Pager receiver"
CTC 1351
CTC 1351 transistor
CXA 1364
transistor ctc 1351
uaa2083
173 MHz RF receiver
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P80CL580
Abstract: P80CL580HFT XTAL18 invertor 80C51 P83CL580 P83CL580HFT philips 3b8 26
Text: Philips Semiconductors Product specification Low voltage 8-bit microcontrollers P80CL580; P83CL580 CONTENTS 15 l2C-BUS SERIAL I/O Serial Control Register S1CON Serial Status Register (S1STA) Data Shift Register (S1 DAT) Address Register (S1 ADR) 1 FEATURES
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P80CL580;
P83CL580
P80CL580
711Gfl2b
P80CL580
P80CL580HFT
XTAL18
invertor
80C51
P83CL580
P83CL580HFT
philips 3b8 26
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PCD3351AP
Abstract: MAB8048 PCD3351A PCD3352A PCD3353A PCD33XXA
Text: Philips Semiconductors Preliminary specification Single-chip 8-bit Telecom Microcontroller c FEATURES • 8-bit CPU, ROM, RAM, I/O in a single 28-lead package • 2 k ROM bytes; 64 RAM bytes PCD3351A • 4 k ROM bytes; 128 RAM bytes (PCD3352A) • 6 k ROM bytes; 128 RAM bytes (PCD3353A)
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PCD3351A/52A/53A
28-lead
PCD3351A)
PCD3352A)
PCD3353A)
MAB8048)
7110BEL
PCD3351AP
MAB8048
PCD3351A
PCD3352A
PCD3353A
PCD33XXA
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12MHz
Abstract: 80C31 instruction set 87C51 80C31 80C51 8XC51 SC87C51CYF40 SI 1020H SC80C31BCGA44 zt 751
Text: Philips Semiconductors Product specification CMOS single-chip 8-bit microcontrollers DESCRIPTION 80C31/80C51/87C51 PIN CONFIGURATIONS The Philips 80C31/80C51/87C51 is a high-performance microcontroller fabricated with Philips high-density CMOS technology. The CMOS 8XC51 is functionally compatible with the
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80C31/80C51/87C51
80C31/80C51
/87C51
8XC51
80C51)
87C51)
16-bit
SQT307-2
711062b
12MHz
80C31 instruction set
87C51
80C31
80C51
SC87C51CYF40
SI 1020H
SC80C31BCGA44
zt 751
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bvc62
Abstract: transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 UT70-25 smd transistor k2 2222 500 16641 transistor BD B1 SMD u 9330
Text: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV859 PINNING SOT262B • Double internal input and output matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum
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BLV859
OT262B
711002b
OT262B.
711Dfi5b
bvc62
transistor BD 139
Transistor 5332
bvc62 smd
philips 2322 734
UT70-25
smd transistor k2
2222 500 16641
transistor BD B1 SMD
u 9330
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OLS 049
Abstract: MS-012AC TEA1113 TEA1113T microphone preamp agc
Text: Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface TEA1113 FEATURES GENERAL DESCRIPTION • Low DC line voltage; operates down to 1.6 V excluding polarity guard The T E A 1113 is a bipolar integrated circuit that performs
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TEA1113
711005b
0Cm473
OLS 049
MS-012AC
TEA1113
TEA1113T
microphone preamp agc
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XTAL18 OSCI CRYSTAL
Abstract: P80CL580 invertor 80C51 P80CL580HFH P80CL580HFT P83CL580 P83CL580HFT philips d2r XTAL18 OSCI CRYSTAL 12 mhz
Text: Philips Semiconductors Product specification Low voltage 8-bit microcontrollers P80CL580; P83CL580 CONTENTS 15 l 2 C-BUS SERIAL I/O Serial Control Register S1CON Serial Status Register (S1STA) Data Shift Register (S1 DAT) Address Register (S1ADR) 2 .1 ROMIess version: P80CL580
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P80CL580;
P83CL580
P80CL580
711002b
010cJb2cÃ
XTAL18 OSCI CRYSTAL
invertor
80C51
P80CL580HFH
P80CL580HFT
P83CL580
P83CL580HFT
philips d2r
XTAL18 OSCI CRYSTAL 12 mhz
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